KR970008770A - Fabrication of Sealed Sintered Crystallized Glass and Improvement of Sealing Process - Google Patents
Fabrication of Sealed Sintered Crystallized Glass and Improvement of Sealing Process Download PDFInfo
- Publication number
- KR970008770A KR970008770A KR1019950019546A KR19950019546A KR970008770A KR 970008770 A KR970008770 A KR 970008770A KR 1019950019546 A KR1019950019546 A KR 1019950019546A KR 19950019546 A KR19950019546 A KR 19950019546A KR 970008770 A KR970008770 A KR 970008770A
- Authority
- KR
- South Korea
- Prior art keywords
- glass
- sealing
- powder
- crystallized glass
- added
- Prior art date
Links
Landscapes
- Glass Compositions (AREA)
Abstract
본 발명은 TV-브라운관 내의 전자총 지지체와 같은 금속-세라믹 간의 봉착에 사용되는 결정화 유리의 제조공정에 관한 것이다. 전자총 지지체는 고온(약500~700℃) 및 고진공에서 사용되기 때문에 이에 사용되는 봉착용 유리도 고온에서 구조적, 열적 안정성을 유지해야 한다. 이와 같은 요구특성을 만족시키기 위해서 첫째, 유리를 적절한 입도분포로 분쇄함으로써 결정화(즉, 봉착)온도를 760~800℃로 조절하였고, 둘째, 원 유리분말에 동일조성의 유리를 결정화시킨 분말이나, ZnO등을 첨가하여 유리를 완전히 결정화시켰다. 셋째, 봉착 열처리 공정을 2단계로 실시함으로써 결정화유리 내의 결정상들이 고온에서 안정성을 갖게 하였다.The present invention relates to a process for producing crystallized glass used for sealing between metal-ceramic such as electron gun support in a TV-Crown tube. Since the electron gun support is used at high temperatures (about 500 to 700 ° C.) and high vacuum, the sealing glass used therein must also maintain structural and thermal stability at high temperatures. In order to satisfy these requirements, first, the glass was ground to an appropriate particle size distribution to adjust the crystallization (ie, sealing) temperature to 760 to 800 ° C. ZnO or the like was added to completely crystallize the glass. Third, by performing the sealing heat treatment process in two stages, the crystal phases in the crystallized glass were stabilized at a high temperature.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019546A KR970008770A (en) | 1995-07-05 | 1995-07-05 | Fabrication of Sealed Sintered Crystallized Glass and Improvement of Sealing Process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019546A KR970008770A (en) | 1995-07-05 | 1995-07-05 | Fabrication of Sealed Sintered Crystallized Glass and Improvement of Sealing Process |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970008770A true KR970008770A (en) | 1997-02-24 |
Family
ID=66526238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950019546A KR970008770A (en) | 1995-07-05 | 1995-07-05 | Fabrication of Sealed Sintered Crystallized Glass and Improvement of Sealing Process |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970008770A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101125169B1 (en) * | 2004-01-30 | 2012-03-19 | 니혼 야마무라가라스 가부시키가이샤 | Sealing composition |
-
1995
- 1995-07-05 KR KR1019950019546A patent/KR970008770A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101125169B1 (en) * | 2004-01-30 | 2012-03-19 | 니혼 야마무라가라스 가부시키가이샤 | Sealing composition |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2281788A1 (en) | Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device | |
US5667587A (en) | Apparatus for growing silicon carbide crystals | |
NO840718L (en) | CERAMIC PRODUCT AND PROCEDURE FOR THE MANUFACTURING OF THIS | |
Tverjanovich et al. | Up-conversion fluorescence in Er-doped chalcogenide glasses based on GeS2–Ga2S3 system | |
Delgado et al. | Crystal structure of the quaternary compounds CuFe 2 AlSe 4 and CuFe 2 GaSe 4 from X-ray powder diffraction | |
KR970008770A (en) | Fabrication of Sealed Sintered Crystallized Glass and Improvement of Sealing Process | |
US3959548A (en) | Graded composition coatings for surface protection of halide optical elements | |
Rodzik et al. | Reflectivity spectra of monocrystalline CdxHg1-xTe as a function of composition and temperature | |
ES425299A1 (en) | Glass fabrication process | |
WO2001009400A8 (en) | Method for producing lithium and device therefor | |
Woodbury | Measurement of the Cd-CdS liquidus | |
JPS60112644A (en) | Glass ceramic glaze having variable coefficient of thermal expansion | |
US3031318A (en) | Low thermal expansion glass | |
WO1999021803A3 (en) | Dielectric glasses for low dielectric loss, low temperature cofired ceramics with medium dielectric constants | |
JPS6486539A (en) | Filler for semiconductor sealing medium | |
US3737345A (en) | Protected thermoelectric elements and method of protecting same | |
US3084055A (en) | Cadmium phosphate glass | |
KR19990017097A (en) | Development of composition and manufacturing process of sealing crystallized glass | |
SU591527A1 (en) | Glass solder | |
JPS57200248A (en) | Crystalline material for sealing | |
Edwards | Nova model of Centaurus XR-2 | |
SU681009A1 (en) | Glass | |
SU357625A1 (en) | MATERIAL FOR HEAT-INSULATING COATING, DETECTED ON THE ELECTRODE ZONES OF GAS-DISCHARGE LAMPS | |
JPS60127745A (en) | Semiconductor substrate | |
GB1331357A (en) | Method of producing top plates for use in ranges |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |