KR970008159A - Semiconductor memory device and driving voltage supply method - Google Patents
Semiconductor memory device and driving voltage supply method Download PDFInfo
- Publication number
- KR970008159A KR970008159A KR1019950019796A KR19950019796A KR970008159A KR 970008159 A KR970008159 A KR 970008159A KR 1019950019796 A KR1019950019796 A KR 1019950019796A KR 19950019796 A KR19950019796 A KR 19950019796A KR 970008159 A KR970008159 A KR 970008159A
- Authority
- KR
- South Korea
- Prior art keywords
- power supply
- supply voltage
- peripheral circuit
- switching means
- memory device
- Prior art date
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
1. 청구 범위에 기재된 발명이 속하는 기술 분야1. TECHNICAL FIELD OF THE INVENTION
본 발명은 반도체 메모리장치에 관한 것으로, 특히 외부전원공급전압이 변화할 때 소자들에게 가해지는 스트레스 및 오작동이 최소화되도록 구동전압을 가변적으로 공급하는 반도체 메모리장치 및 그 구동전압 공급방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor memory device, and more particularly, to a semiconductor memory device and a driving voltage supply method for supplying a driving voltage variably so as to minimize stress and malfunction applied to elements when an external power supply voltage changes.
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
기존의 반도체 메모리장치에서는 저전원전압레벨일때 보상하기 위한 전원전압의 보상수단이 사용되었으나 고전원전압상태일 때 그에 적응적인 구동전압을 공급하는 장치가 없었다.In the conventional semiconductor memory device, the compensation means of the power supply voltage for compensating at the low power supply voltage level is used, but there is no device for supplying an adaptive driving voltage in the high power supply voltage state.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
상기 과제를 해결하기 위하여 본 발명에서는 레벨감지기의 출력을 2개로 분할하고 각각의 출력을 제1스위칭수단과 제2스위칭수단으로 전달하여 선택적인 구동전압의 공급이 가능해졌다.In order to solve the above problems, in the present invention, the output of the level sensor is divided into two and the respective outputs are transferred to the first switching means and the second switching means, thereby enabling the selective supply of the driving voltage.
4. 발명의 중요한 용도4. Important uses of the invention
본 발명에 따른 반도체 메모리장치가 제공되므로써 오동작을 방지하고 반도체 메모리장치를 구성하는 소자들에게 가해지는 스트레스를 줄이는 안정적인 반도체 메모리장치가 구현된다.By providing the semiconductor memory device according to the present invention, a stable semiconductor memory device is implemented, which prevents a malfunction and reduces stress applied to elements constituting the semiconductor memory device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 본 발명의 실시예에 따른 전원전압의 사용상태를 나타내는 블럭도.3 is a block diagram showing a state of use of a power supply voltage according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019796A KR0182962B1 (en) | 1995-07-06 | 1995-07-06 | Semiconductor memory apparatus & its driving voltage supply method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019796A KR0182962B1 (en) | 1995-07-06 | 1995-07-06 | Semiconductor memory apparatus & its driving voltage supply method |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970008159A true KR970008159A (en) | 1997-02-24 |
KR0182962B1 KR0182962B1 (en) | 1999-04-15 |
Family
ID=19419963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950019796A KR0182962B1 (en) | 1995-07-06 | 1995-07-06 | Semiconductor memory apparatus & its driving voltage supply method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0182962B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100609994B1 (en) * | 1999-07-08 | 2006-08-09 | 삼성전자주식회사 | Data output circuit with low leakage current characteristic in semiconductor device |
KR100650726B1 (en) * | 2004-11-15 | 2006-11-27 | 주식회사 하이닉스반도체 | Internal voltage supplier for memory device |
KR102538817B1 (en) * | 2022-11-08 | 2023-05-31 | 국방과학연구소 | Manufacturing method of refractory metal lining tube using explosive welding |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101053479B1 (en) * | 2009-12-02 | 2011-08-03 | 주식회사 하이닉스반도체 | Semiconductor devices |
-
1995
- 1995-07-06 KR KR1019950019796A patent/KR0182962B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100609994B1 (en) * | 1999-07-08 | 2006-08-09 | 삼성전자주식회사 | Data output circuit with low leakage current characteristic in semiconductor device |
KR100650726B1 (en) * | 2004-11-15 | 2006-11-27 | 주식회사 하이닉스반도체 | Internal voltage supplier for memory device |
KR102538817B1 (en) * | 2022-11-08 | 2023-05-31 | 국방과학연구소 | Manufacturing method of refractory metal lining tube using explosive welding |
Also Published As
Publication number | Publication date |
---|---|
KR0182962B1 (en) | 1999-04-15 |
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