KR970002398A - Active matrix liquid crystal display device and manufacturing method thereof - Google Patents

Active matrix liquid crystal display device and manufacturing method thereof Download PDF

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Publication number
KR970002398A
KR970002398A KR1019950018032A KR19950018032A KR970002398A KR 970002398 A KR970002398 A KR 970002398A KR 1019950018032 A KR1019950018032 A KR 1019950018032A KR 19950018032 A KR19950018032 A KR 19950018032A KR 970002398 A KR970002398 A KR 970002398A
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KR
South Korea
Prior art keywords
capacitor
electrode
forming
liquid crystal
crystal display
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KR1019950018032A
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Korean (ko)
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KR0144233B1 (en
Inventor
이종호
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김주용
현대전자산업 주식회사
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Priority to KR1019950018032A priority Critical patent/KR0144233B1/en
Publication of KR970002398A publication Critical patent/KR970002398A/en
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Publication of KR0144233B1 publication Critical patent/KR0144233B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)

Abstract

본 발명은 액티브 매트릭스 방식의 액정 표시 장치 및 그 제조 방법에 관한 것으로 보다 구체적으로는 복수의 매트릭스 배치시 각 화소와 접속된 스위칭 소자를 효율적으로 설계하여 작동시키는 액티브 매트릭스 방식의 액정 표시 장치 및 그 제조 방법에 관한 것으로, 본 발명에 따른 액정 표시 장치는 화소의 드레인 전압의 쉬프트됨을 방지하기 위하여 형성된 용량 캐패시터를 병렬로 형섬함과 동시에 용량 캐패시터의 면적을 감소시킴으로써 전하 충전 용량을 확보하고, 화소 전극의 개구율을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix liquid crystal display device and a method of manufacturing the same. More specifically, an active matrix liquid crystal display device and a manufacturing method thereof, which efficiently design and operate a switching element connected to each pixel in a plurality of matrix arrangements. A liquid crystal display device according to the present invention is to form a capacitor capacitor formed in parallel to prevent the shift of the drain voltage of the pixel in parallel, while at the same time reducing the area of the capacitor capacitor to secure the charge charge capacity of the pixel electrode The aperture ratio can be improved.

Description

액티브 매트릭스 방식의 액정 표시 장치 및 그의 제조 방법Active matrix liquid crystal display device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도 (가)는 본 발명의 일실시예에 따른 액정 표시 장치에 대한 평면도, (나)는 제3도 (가)를 B-B'에 따라 취해진 액정 표시 장치의 단면도, (다)는 제3도 (가)를 개략적으로 나타낸 액정 표시 장치의 회로도, 제4도 (가)는 본 발명의 [실시예2]에 따른 축적 용량 전극을 구비한 액정 표시 장치에 대한 평면도, (나)는 제4도 (가)를 B-B'에 따라 취해진 액정 표시 장치의 단면도, (다)는 제4도 (가)를 개략적으로 나타낸 회로도.FIG. 3A is a plan view of a liquid crystal display according to an exemplary embodiment of the present invention, (B) is a cross-sectional view of the liquid crystal display taken along line B-B 'of FIG. FIG. 4A is a circuit diagram of a liquid crystal display device schematically showing FIG. 3A, and FIG. 4A is a plan view of a liquid crystal display device having a storage capacitor electrode according to Embodiment 2 of the present invention. FIG. 4A is a cross-sectional view of the liquid crystal display device taken along line B-B ', and FIG. 3C is a circuit diagram schematically showing FIG. 4A.

Claims (5)

게이트 전극 배선과 데이타 전극 배선의 교차점에 설계되는 스위칭 소자인 박막 트랜지스터, 상기 박막 트랜지스터의 드레인 전극과 접속된 하부의 화소 전극부와 그 하부에 구비된 용량 전극부와 그 사이의 게이트 절연막으로 이루어지는 용량 캐패시터 및 상기 용량 캐패시터와 병렬 구조로 연결되어 있으며 상기 하부 기판의 화소 전극부와 그와 대향하는 상부 기판의 공통 전극부와, 그 사이의 액정으로 이루어진 액정 캐패시터를 포함하는 액티브 매트릭스 방식의 액정 표시 장치에 있어서, 상기 하부의 화소 전극부와 용량 전극부로 이루어지는 용량 캐패시터를 두개의 병렬 캐패시터로 구성하는 것을 특징으로 하는 액티브 매트릭스 방식의 액정 표시 장치.A capacitor comprising a thin film transistor which is a switching element designed at an intersection point of a gate electrode wiring and a data electrode wiring, a lower pixel electrode portion connected to a drain electrode of the thin film transistor, a capacitor electrode portion provided below, and a gate insulating film therebetween An active matrix liquid crystal display device connected in parallel with a capacitor and the capacitor and including a pixel electrode portion of the lower substrate, a common electrode portion of the upper substrate facing the capacitor substrate, and a liquid crystal capacitor comprising liquid crystals therebetween; The liquid crystal display device of an active matrix system according to claim 1, wherein the capacitor formed of the lower pixel electrode part and the capacitor electrode part comprises two parallel capacitors. 제1항에 있어어서, 상기 용량 전극부는 상기 게이트 전극 배선의 소정 부분이 돌출되어 이루어지는 것을 특징으로 하는 액티브 매트릭스 방식의 액정 표시 장치.The active matrix liquid crystal display of claim 1, wherein a predetermined portion of the gate electrode wiring is protruded. 제1항에 있어서, 상기 용량 전극부는 게이트 전극 배선과 동일 평면상에서 형성되어지되, 각각 게이트 전극 배선과는 독립적인 위치에 형성되는 것을 특징으로 하는 액티브 매트릭스 방식의 액정 표시 장치.The liquid crystal display device according to claim 1, wherein the capacitor electrode portion is formed on the same plane as the gate electrode wiring, and is formed at a position independent of the gate electrode wiring, respectively. 유리 기판상에 병렬의 용량 캐패시터를 형성하기 위한 용량 전극을 형성하는 단계; 상기 용량 전극 상부에 제1게이트 절연막을 형성하는 단계; 상기 제1게이트 절연막 상부에 게이트 전극 배선과 상기 게이트 전극 배선에서 인출된 용량 전극을 형성하는 단계; 상기 전체 구조 상부에 제2게이트 절연막을 형성하는 단계; 상기 유리 기판 상단의 용량 전극만이 노출되도록 콘택홀을 형성하는 단계 및 전체 구조 상부에 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액티브 매트릭스 방식의 액정 표시 장치의 제조방법.Forming a capacitance electrode for forming a parallel capacitor on the glass substrate; Forming a first gate insulating layer on the capacitor electrode; Forming a gate electrode wiring and a capacitor electrode drawn from the gate electrode wiring on the first gate insulating film; Forming a second gate insulating layer on the entire structure; Forming a contact hole so that only the capacitor electrode on the upper surface of the glass substrate is exposed; and forming a pixel electrode on the entire structure of the liquid crystal display device. 유리 기판상에 게이트 전극 배선과 동일 선상이 되도록 하되 상기 게이트 전극 배선과는 별도의 위치에 용량 전극을 형성하는 단계; 상기 용량 전극 상부에 제1게이트 절연막을 형성하는 단계; 상기 제1게이트 절연막 상부에 병령의 용량 캐패시터를 형성하기 위한 용량 전극을 형성하는 단계; 상기 전체 구조 상부에 제2게이트 절연막을 형성하는 단계; 상기 유리 기판 상부의 용량 전극만이 노출되도록 콘택홀을 형성하는 단계 및 전제 구조 상부에 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액티브 매트릭스 방식의 액정표시 장치의 제조 방법.Forming a capacitive electrode on a glass substrate so as to be in line with the gate electrode wiring but at a position separate from the gate electrode wiring; Forming a first gate insulating layer on the capacitor electrode; Forming a capacitor electrode on the first gate insulating layer to form a capacitor capacitor; Forming a second gate insulating layer on the entire structure; Forming a contact hole so that only the capacitor electrode on the glass substrate is exposed and forming a pixel electrode on the entire structure of the liquid crystal display device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018032A 1995-06-29 1995-06-29 Manufacturing method and apparatus of active matrix lcd KR0144233B1 (en)

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KR1019950018032A KR0144233B1 (en) 1995-06-29 1995-06-29 Manufacturing method and apparatus of active matrix lcd

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376338B1 (en) * 1999-06-28 2003-03-15 알프스 덴키 가부시키가이샤 Active matrix type liquid crystal display
KR100461467B1 (en) * 2002-03-13 2004-12-13 엘지.필립스 엘시디 주식회사 an active matrix organic electroluminescence display device
KR100483385B1 (en) * 1997-09-09 2005-08-31 삼성전자주식회사 Thin film transistor substrate having black matrix formed by dyeing organic insulating film and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483385B1 (en) * 1997-09-09 2005-08-31 삼성전자주식회사 Thin film transistor substrate having black matrix formed by dyeing organic insulating film and manufacturing method thereof
KR100376338B1 (en) * 1999-06-28 2003-03-15 알프스 덴키 가부시키가이샤 Active matrix type liquid crystal display
KR100461467B1 (en) * 2002-03-13 2004-12-13 엘지.필립스 엘시디 주식회사 an active matrix organic electroluminescence display device

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