JP2001249361A5 - - Google Patents
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- JP2001249361A5 JP2001249361A5 JP2000111219A JP2000111219A JP2001249361A5 JP 2001249361 A5 JP2001249361 A5 JP 2001249361A5 JP 2000111219 A JP2000111219 A JP 2000111219A JP 2000111219 A JP2000111219 A JP 2000111219A JP 2001249361 A5 JP2001249361 A5 JP 2001249361A5
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- Prior art keywords
- thin film
- electro
- optical device
- film transistor
- storage capacitor
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Description
【発明の名称】電気光学装置及び電子機器[Title of the invention] Electro-optics device and electronic device
【０００８】
本発明の電気光学装置は上記課題を解決するために、複数の走査線と、前記複数の走査線に交差する複数のデータ線と、前記走査線と前記データ線の交差に対応して配置された薄膜トランジスタ及び画素電極とを有する電気光学装置であって、前記薄膜トランジスタの半導体層のドレイン領域が前記データ線及び前記走査線の延在方向に沿って形成された第１蓄積容量電極と、前記薄膜トランジスタのゲート電極と同一層で形成され、前記データ線及び前記走査線の延在方向に沿って形成された第１蓄積容量電極と重なる第２蓄積容量電極と、前記第２蓄積容量電極より上層であって、前記薄膜トランジスタの半導体層のドレイン電極と前記画素電極との間を電気的に接続するための導電層とを備えることを特徴とする。0008
In order to solve the above problems, the electro-optical device of the present invention is arranged corresponding to a plurality of scanning lines, a plurality of data lines intersecting the plurality of scanning lines, and the intersection of the scanning lines and the data lines. An electro-optical device having a thin film and a pixel electrode, the first storage capacity electrode in which the drain region of the semiconductor layer of the thin film is formed along the extending direction of the data line and the scanning line, and the thin film. A second storage capacity electrode formed in the same layer as the gate electrode of the above and overlapping the first storage capacity electrode formed along the extending direction of the data line and the scanning line, and a layer above the second storage capacity electrode. It is characterized by including a conductive layer for electrically connecting between the drain electrode of the semiconductor layer of the thin film and the pixel electrode.
【０００９】
また、本発明は、前記導電層は、隣接するデータ線間に形成されると良い。0009
Further, in the present invention, the conductive layer may be formed between adjacent data lines.
【００１０】
また、本発明は、前記薄膜トランジスタの半導体層の下層であって、前記薄膜トランジスタのチャネルに重なる遮光性の下側導電膜を有すると良い。0010
Further, the present invention may have a light-shielding lower conductive film which is a lower layer of the semiconductor layer of the thin film transistor and which overlaps with the channel of the thin film transistor.
【００１１】
また、本発明は、前記第２蓄積容量電極は、前記データ線が延在する領域で前記下側導電膜に電気的に接続されると良い。[0011]
Further, in the present invention, it is preferable that the second storage capacity electrode is electrically connected to the lower conductive film in the region where the data line extends.
【００７２】
本発明のこのような作用及び他の利得は次に説明する実施の形態から明らかにする。[0072]
Such actions and other gains of the present invention will be apparent from the embodiments described below.
Claims (5)
前記薄膜トランジスタの半導体層のドレイン領域が前記データ線及び前記走査線の延在方向に沿って形成された第１蓄積容量電極と、
前記薄膜トランジスタのゲート電極と同一層で形成され、前記データ線及び前記走査線の延在方向に沿って形成された第１蓄積容量電極と重なる第２蓄積容量電極と、
前記第２蓄積容量電極より上層であって、前記薄膜トランジスタの半導体層のドレイン電極と前記画素電極との間を電気的に接続するための導電層とを備えることを特徴とする電気光学装置。An electro-optical device comprising: a plurality of scanning lines; a plurality of data lines intersecting the plurality of scanning lines; and a thin film transistor and a pixel electrode arranged corresponding to the intersections of the scanning lines and the data lines.
A first storage capacitor electrode in which a drain region of a semiconductor layer of the thin film transistor is formed along the extending direction of the data line and the scanning line;
A second storage capacitor electrode which is formed in the same layer as the gate electrode of the thin film transistor and overlaps the first storage capacitor electrode formed along the extending direction of the data line and the scanning line;
An electro-optical device, comprising: a conductive layer above the second storage capacitor electrode for electrically connecting the drain electrode of the semiconductor layer of the thin film transistor and the pixel electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000111219A JP3904371B2 (en) | 1998-11-26 | 2000-04-12 | Electro-optical device and electronic apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33634398 | 1998-11-26 | ||
| JP2000111219A JP3904371B2 (en) | 1998-11-26 | 2000-04-12 | Electro-optical device and electronic apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56032599A Division JP3458382B2 (en) | 1998-11-26 | 1999-11-26 | ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004320159A Division JP3733970B6 (en) | 1998-11-26 | 2004-11-04 | Electro-optical device and electronic apparatus |
| JP2006302517A Division JP4758868B2 (en) | 1998-11-26 | 2006-11-08 | Electro-optical device and electronic apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001249361A JP2001249361A (en) | 2001-09-14 |
| JP2001249361A5 true JP2001249361A5 (en) | 2004-12-24 |
| JP3904371B2 JP3904371B2 (en) | 2007-04-11 |
Family
ID=18623591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000111219A Expired - Lifetime JP3904371B2 (en) | 1998-11-26 | 2000-04-12 | Electro-optical device and electronic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3904371B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4342831B2 (en) * | 2002-04-23 | 2009-10-14 | 株式会社半導体エネルギー研究所 | Display device |
| JP4225347B2 (en) * | 2006-12-15 | 2009-02-18 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| JP5862204B2 (en) * | 2011-10-31 | 2016-02-16 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| JP6186127B2 (en) * | 2013-01-25 | 2017-08-23 | 株式会社ジャパンディスプレイ | Display device |
| TWI559064B (en) | 2012-10-19 | 2016-11-21 | Japan Display Inc | Display device |
-
2000
- 2000-04-12 JP JP2000111219A patent/JP3904371B2/en not_active Expired - Lifetime
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