KR970000699B1 - Cleaning method of substrate surface using reaction rate-control - Google Patents
Cleaning method of substrate surface using reaction rate-control Download PDFInfo
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- KR970000699B1 KR970000699B1 KR1019930012394A KR930012394A KR970000699B1 KR 970000699 B1 KR970000699 B1 KR 970000699B1 KR 1019930012394 A KR1019930012394 A KR 1019930012394A KR 930012394 A KR930012394 A KR 930012394A KR 970000699 B1 KR970000699 B1 KR 970000699B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 238000004140 cleaning Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 title claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 239000012535 impurity Substances 0.000 claims abstract description 22
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 34
- 239000000243 solution Substances 0.000 claims description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 9
- 239000005416 organic matter Substances 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Abstract
Description
제1도의 (a)∼(d) : 종래의 실리콘 기판 표면의 습식청정공정을 설명하기 위한 공정도.(A)-(d) of FIG. 1: Process drawing for demonstrating the wet-cleaning process of the conventional silicon substrate surface.
제2도의 (a)∼(d) : 본 발명에 부합되는 실리콘 기판 표면의 습식청정공정을 설명하기 위한 공정도.(A)-(d) of FIG. 2: Process drawing for demonstrating the wet cleaning process of the silicon substrate surface which concerns on this invention.
제3도 : 청정용액중의 질산농도변화에 따른 Fe 농도변화를 나타내는 그래프.3 is a graph showing the change of Fe concentration according to the change of nitric acid concentration in the clean solution.
제4도 : 청정시간에 따른 Fe 농도변화를 나타내는 그래프.4 is a graph showing the change in Fe concentration according to the cleaning time.
제5도의 (a) 및 (b) : 실리콘 기판 표면의 미세거칠기의 TEM 관찰도.(A) and (b) of FIG. 5: TEM observation diagram of fine roughness on the surface of a silicon substrate.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘 기판 2 : 산화실리콘층1 silicon substrate 2 silicon oxide layer
3 : 유기물층3: organic material layer
본 발명은 반도체 제조공정중 수율에 커다란 영향을 미치는 실리콘 기판 표면에 흡착되어 있는 불순물들을 반응율 제한을 이용하여 습식청정하는 방법에 관한 것이다.The present invention relates to a method for wet-cleaning impurities using a reaction rate limiter adsorbed on the surface of a silicon substrate which has a great influence on the yield during the semiconductor manufacturing process.
일반적으로, 실리콘 기판 표면은 제1도(a)와 같이 얇은 유기물층(3)으로 덮혀 있고, 대부분의 불순물들은 유기물층 아래의 자연산화 실리콘층(2)과 실리콘 기판(1) 표면으로부터 약 수십 Å 이하에서 존재하므로 실리콘 기판 표면 청정을 위해서는 유기물층(3)과 자연산화 실리콘층(2) 그리고 수십 Å 내외의 실리콘 기판 표면층을 제거시켜야 한다. 유기물의 제거는 제1도(b)에서와 같이 H2SO4: H2O2, NH4OH H2O2: H2O 등의 혼합용액에 의해 쉽게 이루어진다.Generally, the surface of the silicon substrate is covered with a thin organic layer 3 as shown in FIG. 1 (a), and most impurities are about tens of micrometers or less from the surface of the silicon substrate 1 and the natural silicon oxide layer 2 under the organic layer. In order to clean the surface of the silicon substrate, the organic material layer (3), the natural silicon oxide layer (2), and the silicon substrate surface layer around several tens of microseconds must be removed. The removal of the organics is easily performed by a mixed solution such as H 2 SO 4 : H 2 O 2 , NH 4 OH H 2 O 2 : H 2 O and the like as in FIG.
또한 제1도(c)에서와 같이 산화실리콘층과 실리콘층은 실리콘을 충분하게 활성화시킬 수 있는 다량의 F기나 Cl기를 포함한 반도체용 화학약품들을 사용함으로써 제거된다. 이때 유기물, 산화실리콘층의 제거와 함께 기판에 흡착되어 있던 불순물도 제거된다. 그러나, 실리콘 기판으로부터 전리되어 청정용액속으로 제거된 불순물은 재차 실리콘 기판에 흡착되어 실리콘 기판 표면을 오염시킬 수 있으며, 또한 제1도(d)에서와 같이 다량의 청정용액의 사용으로 인한 청정후 실리콘 기판 표면에서 큰 거칠기를 유발시킨다. 그러므로 상기 한 바와같은 종래의 습식청정기술로의 실리콘 기판의 불순물 제거 한계와 표면 거칠기 유발은 고집적 회로급 반도체 공정조건의 요구사항을 만족시키지 못하는 단점이 된다.In addition, as shown in FIG. 1C, the silicon oxide layer and the silicon layer are removed by using semiconductor chemicals containing a large amount of F or Cl to sufficiently activate the silicon. At this time, the organic substance and the silicon oxide layer are removed together with the impurities adsorbed on the substrate. However, impurities that are ionized from the silicon substrate and removed into the clean solution may be adsorbed onto the silicon substrate again to contaminate the surface of the silicon substrate, and also after cleaning due to the use of a large amount of the clean solution as shown in FIG. It causes great roughness on the silicon substrate surface. Therefore, the limitation of impurity removal and surface roughness of the silicon substrate by the conventional wet cleaning technique as described above are disadvantages that do not satisfy the requirements of the high-integration circuit class semiconductor process conditions.
본 발명은 불산(HF), 질산(HNO3) 및 초순수 탈이온수를 일정한 비로 혼합한 청정용액을 사용하여 기판 표면에 흡착되어 있는 철(Fe)과 같은 불순물을 제거하므로서 종래의 청정방법에 비하여 재오염을 줄일 수 있을 뿐만 아니라 기판 표면도 10Å 이하의 미세 거칠기를 유지할 수 있는 반응율이 제한된 실리콘 기판 표면의 불순물 습식청정방법을 제공하고자 하는데, 그 목적이 있다.The present invention removes impurities such as iron (Fe) adsorbed on the surface of a substrate by using a clean solution in which hydrofluoric acid (HF), nitric acid (HNO 3 ) and ultrapure deionized water are mixed at a constant ratio. It is an object of the present invention to provide an impurity wet cleaning method of a silicon substrate surface having a limited reaction rate that can reduce contamination and maintain a fine roughness of 10 kPa or less.
이하, 본 발명에 대하여 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated.
본 발명은 실리콘 기판 표면에 흡착된 불순물을 제거하는 습식청정방법에 있어서, 통상의 유기물 제거용 청정용액을 사용하여 통상의 방법으로 실리콘 기판 표면위의 유기물을 제거한 다음, 2.18∼4.3중랑%의 질산, 0.16~4.3중량%의 불산(HF), 및 잔부 탈이온 초순수(Deionized Water)로 조성되는 청정용액을 사용하여 실온에서 실리콘 기판을 청정하는 반응율 제한을 이용한 실리콘 기판 표면의 불순물 습식청정방법에 관한 것이다.In the wet cleaning method for removing impurities adsorbed on the surface of a silicon substrate, the organic matter on the surface of the silicon substrate is removed by a conventional method using a conventional cleaning solution for removing organic substances, followed by 2.18 to 4.3% by weight of nitric acid. Method for wet impurity cleaning of silicon substrate surface using a reaction rate limitation to clean the silicon substrate at room temperature using a clean solution composed of 0.16 to 4.3% by weight of hydrofluoric acid (HF) and residual deionized water. will be.
이하, 본 발명에 대하여 상세히 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.
본 발명에 따라 실리콘 기판상의 불순물[제2도의 (a)]을 습식청정하기 위해서는 통상의 불순물 제거용 청정용액을 사용하여 통상의 방법으로 실리콘 기판상의 유기물을 제거한다[제2도의 (b)].According to the present invention, in order to wet-clean an impurity [Fig. 2 (a)] on a silicon substrate, an organic substance on the silicon substrate is removed by a conventional method using a clean solution for removing impurities [Fig. 2 (b)]. .
본 발명에 있어 실리콘 기판상의 유기물을 제거하기 위하여 사용되는 통상의 청정용액으로는 황산(H2SO4)과 과산화수소(H2O2)를 혼합한 혼합용액 및 수산화암모늄(NH40H), 과산화수소(H2O2)와 탈이온 초순수(H2O)의 혼합용액이 바람직하며, 상기 황산과 과산화수소의 혼합비는 2:1~4:1이 바람직하고, 보다 바람직한 혼합비는 3:1이며, 상기 수산화암모늄, 과산화수소와 물의 혼합비는 1:1:5가 바람직하다.In the present invention, a typical clean solution used to remove organic matter on a silicon substrate is a mixed solution of sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ), and ammonium hydroxide (NH 4 0H) and hydrogen peroxide. A mixed solution of (H 2 O 2 ) and deionized ultrapure water (H 2 O) is preferable, and a mixing ratio of sulfuric acid and hydrogen peroxide is preferably 2: 1 to 4: 1, more preferably a mixing ratio of 3: 1, The mixing ratio of ammonium hydroxide, hydrogen peroxide and water is preferably 1: 1: 5.
또한, 황산과 과산화수소를 혼합한 혼합용액을 사용하여 유기물을 제거하는 경우, 그 제거온도는 100-130℃가 바람직하고, 보다 바람직한 제거온도는 110-l2O℃이며, 수산화암모늄, 과산화수소와 물의 혼합용액을 사용하는 경우 그 제거온도는 70-8O℃가 바람직하고, 보다 바람직한 제거온도는 75℃이다.In addition, when the organic matter is removed using a mixed solution of sulfuric acid and hydrogen peroxide, the removal temperature is preferably 100-130 ° C, more preferably 110-110 ° C, and a mixed solution of ammonium hydroxide, hydrogen peroxide and water. When using the removal temperature is preferably 70-8O ℃, more preferably the removal temperature is 75 ℃.
다음에 불순물들의 청정을 위한 산화실리콘막의 제거를 위하여, 0.16-4.3중량%의 불산, 2.18-4.3중량%의 질산 및 잔부 탈이온 초순수로 조성되는 칭정용액을 사용하여 실온에서 청정하므로서, 청정용액중의 작은 농도로 존재하던 활성화가 큰 질산에 의하여 제한된 산화반응이 먼저 일어나고, 시간 t=t1에서는 불산에 의한 식각이 질산에 의한 산화보다 많아지기 시작하고[제2도(c)], 시간이 지남에 따라 불산에 의한 식각반응이 질산에 의한 산화반응보다 우세해져, 제2도(d)에서와 같이, 시간 t=t2에서는 완전한 실리콘 표면만이 나타나게 된다. 상기 시간 t1은 대략 2분 정도이고, 시간 t2는 약 4분 내외정도이다.Next, in order to remove the silicon oxide film for cleaning the impurities, a cleansing solution composed of 0.16-4.3% by weight of hydrofluoric acid, 2.18-4.3% by weight of nitric acid and residual deionized ultrapure water was used to clean at room temperature. The limited oxidation reaction takes place first due to the large activation of nitric acid in the small concentration of, and at time t = t 1 , the etching by hydrofluoric acid starts to be more than the oxidation by nitric acid [Figure 2 (c)]. Over time, the etching reaction by hydrofluoric acid becomes more prevalent than the oxidation reaction by nitric acid, and as shown in FIG. 2 (d), only a complete silicon surface appears at time t = t 2 . The time t 1 is about 2 minutes, and time t 2 is about 4 minutes.
본 발명의 청정용액에 있어서, 불산의 양이 0.16중량% 이하인 경우에는 식각율이 떨어져 산화물들이 실리콘 기판에서 쉽게 제거되지 않으므로, 불산의 양은 0.16중량% 이상으로 제한하는 것이 바람직하다.In the clean solution of the present invention, when the amount of hydrofluoric acid is 0.16% by weight or less, since the etching rate is lowered and oxides are not easily removed from the silicon substrate, the amount of hydrofluoric acid is preferably limited to 0.16% by weight or more.
본 발명에 의해 실리콘 기판 표면의 불순물을 습식청정하는 경우, 질산에 의해서는 실리콘 기판 표면의 산화와 함께 실리콘 산화막내에서의 불순물들의 참여로 불순물들과의 산화 화합물을 형성하고, 불산에 의해서 산화된 실리콘층의 식각으로 산화막내에 존재하는 불순물들이 전리 혹은 화합물 상태로 청정 용액속에 들어가므로 기존의 청정방법에 비해 재오염을 줄일 수 있다. 이때 반응율 제한 요소인 미량의 질산과 불산에 의해 산화 및 식각되는 속도는 상당히 느려 충분히 불순물들이 산화막내로 참여할 수 있고, 산화실리콘층내에 존재하던 화합물 상태의 불순물들은 식각반응을 통하여 제거되어 청정이 이루어지며, 또한 상당히 낮은 반응율 때문에 표면의 거칠기도 일으키지 않은 청정된 실리콘 기판이 얻어진다.In the case of wet cleaning impurities on the surface of a silicon substrate according to the present invention, nitric acid forms an oxidized compound with impurities by oxidation of the surface of the silicon substrate and participation of impurities in the silicon oxide film, and oxidized by hydrofluoric acid. As the silicon layer is etched, impurities present in the oxide film enter the clean solution in an ionized or compound state, thereby reducing recontamination compared to the conventional clean method. At this time, the rate of oxidation and etching by trace amount of nitric acid and hydrofluoric acid, which are the rate limiting factor, is considerably slow, so that impurities can sufficiently participate in the oxide film. In addition, a clean silicon substrate is obtained which does not cause surface roughness due to the considerably low reaction rate.
이하, 실시예를 통하여 본 발명을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples.
실시예 1Example 1
황산과 과산화수소가 3 : 1로 혼합된 혼합용액을 이용하여 110℃에서 실리콘 기판위의 유기물을 제거한 다음, 불산항량이 4.3% 및 0.16%인 청정용액중의 질산함량을 제3도와 같이 변화시킨 청정응액으로 실리콘 기판은 상온에서 청정한 다음, 실리콘 기판 표면 오염원인 철(Fe)의 농도를 조사하고, 그 결과를 제3도에 나타내었다.The organic solution on the silicon substrate was removed at 110 ° C using a mixed solution of sulfuric acid and hydrogen peroxide at 3: 1, and then the nitric acid content in the clean solution with hydrofluoric acid contents of 4.3% and 0.16% was changed as shown in FIG. After condensation, the silicon substrate was cleaned at room temperature, and then the concentration of iron (Fe), a surface contamination source of the silicon substrate, was investigated, and the results are shown in FIG.
제3도에 나타난 바와같이, 불산의 함량이 4.3% 및 1.6%이고 질산함량이 2.18∼4.3%인 경우 철함량이 가장 낮게 나타남을 알 수 있으며, 특히, 불산이 0.16%이고, 질산이 2.9%인 청정용액을 사용할 경우 철농도가 1×1011atms/cm3이하로서 가장 우수한 청정효과를 나타내고 있음을 알 수 있다.As shown in FIG. 3, when the hydrofluoric acid content is 4.3% and 1.6% and the nitric acid content is 2.18 to 4.3%, the iron content is lowest. In particular, the hydrofluoric acid is 0.16% and the nitric acid is 2.9%. When the phosphorus clean solution is used, the iron concentration is 1 × 10 11 atms / cm 3 or less, which shows the best cleaning effect.
실시예 2Example 2
실시예 1과 동일한 황산과 과산화수소의 혼합용액을 이용하여 실리콘 기판위의 유기물을 제거한 다음, 불산 0.16% 및 질산 : 2.0%인 발명 청정용액 1, 불산 : 0.47% 및 질산 2.9%인 발명 청정용액 2, 및 불산 : 4.28% 및 질산 : 2.9%인 발명 청정용액 3을 사용하여 실리콘 기판을 청정한 다음 실리콘 기판 표면 오염원인 철(Fe)의 농도를 조사하고 그 결과를 제4도에 나타내었다.Using the same mixed solution of sulfuric acid and hydrogen peroxide as in Example 1, the organic matter on the silicon substrate was removed, and then, the invention clean solution 1 with hydrofluoric acid and nitric acid: 2.0%, the invention clean solution with hydrofluoric acid: 0.47% and 2.9% nitric acid 2 , And hydrofluoric acid: 4.28% and nitric acid: 2.9%. After cleaning the silicon substrate using the clean solution 3, the concentration of iron (Fe) as a surface contamination of the silicon substrate was investigated and the results are shown in FIG.
제4도에 나타난 바와 같이, 청정시간이 1분 이상인 경우 Fe 농도가 급격히 저하됨을 알 수 있으며, 보다 바람직한 청정시간은 3-7분 정도임을 알 수 있다.As shown in Figure 4, it can be seen that the Fe concentration is sharply reduced when the cleaning time is more than 1 minute, it can be seen that the more preferable cleaning time is about 3-7 minutes.
실시예 3Example 3
제5도(a)와 같은 실리콘 표면 거칠기를 갖는 실리콘 기판을 실시예 2의 발명 청정용액(2)을 사용하여 청정한 다음, 청정된 실리콘 표면에 산화실리콘층을 중착한 후, TEM 관찰을 하고, 그 관찰결과를 제5도(b)에 나타내었다.The silicon substrate having the silicon surface roughness as shown in FIG. 5 (a) was cleaned using the invention cleaning solution 2 of Example 2, and then the silicon oxide layer was deposited on the cleaned silicon surface, followed by TEM observation. The observation result is shown in FIG.
제5도에 나타난 바와같이, 본 발명에 따라 청정한 후 산화실리콘층을 중착한 실리콘 기판 표면[제5도의 (b)]은 아무런 처리를 하지 않고, 자연실리콘 산화층을 형성하는 제5도(a)와 같은 수준인 10Å 내외의 미세 거칠기를 나타내고 있음을 알 수 있다. 이는 본 발명의 청정법이 초기 실리콘 기판의 본래 계면상태를 그대로 유지시켜 주므로써 표면 거칠기 유발을 방지하여 고집적 회로급에 사용될 수 있는 습식청정방법임을 나타내는 것이다.As shown in FIG. 5, the surface of the silicon substrate (FIG. 5 (b)) in which the silicon oxide layer has been cleaned and cleaned according to the present invention is not treated. It can be seen that the fine roughness of about 10 외 and the same level. This indicates that the cleaning method of the present invention is a wet cleaning method that can be used in a highly integrated circuit class by preventing the surface roughness caused by maintaining the original interface state of the initial silicon substrate as it is.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930012394A KR970000699B1 (en) | 1993-07-02 | 1993-07-02 | Cleaning method of substrate surface using reaction rate-control |
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| KR1019930012394A KR970000699B1 (en) | 1993-07-02 | 1993-07-02 | Cleaning method of substrate surface using reaction rate-control |
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| KR970000699B1 true KR970000699B1 (en) | 1997-01-18 |
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