JPH09321009A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH09321009A JPH09321009A JP13502996A JP13502996A JPH09321009A JP H09321009 A JPH09321009 A JP H09321009A JP 13502996 A JP13502996 A JP 13502996A JP 13502996 A JP13502996 A JP 13502996A JP H09321009 A JPH09321009 A JP H09321009A
- Authority
- JP
- Japan
- Prior art keywords
- treatment
- wafer
- pure water
- less
- seconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
方法に関し、特に基板の洗浄方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method, and more particularly to a substrate cleaning method.
【０００２】[0002]
【従来の技術】従来、半導体基板や絶縁基板を洗浄する
洗浄方法として、ＲＣＡ法が広く用いられている。ＲＣ
Ａ洗浄は、８０℃、１０分間のＡＰＭ（アンモニア・過
酸化水素水）による洗浄、純水によるリンス、ＨＦによ
る洗浄、純水によるリンス、８０℃、１０分間のＨＰＭ
（ＨＣｌ・過酸化水素水）による洗浄、純水リンス、乾
燥の順に行われる。ＲＣＡ洗浄では、例えばＡＰＭ洗浄
のような酸化膜を形成する過程がいくつか存在し、その
際にシリコンに形成される酸化膜に金属不純物が取り込
まれる。その酸化膜を希弗酸で除去することで、金属不
純物が除去される。2. Description of the Related Art Conventionally, the RCA method has been widely used as a cleaning method for cleaning a semiconductor substrate or an insulating substrate. RC
A cleaning is performed at 80 ° C. for 10 minutes with APM (ammonia / hydrogen peroxide solution), pure water rinse, HF cleaning, pure water rinse, 80 ° C. for 10 minutes HPM
Cleaning with (HCl / hydrogen peroxide water), rinsing with pure water, and drying are performed in this order. In the RCA cleaning, there are several processes of forming an oxide film, such as APM cleaning, and metal impurities are incorporated into the oxide film formed in silicon at that time. By removing the oxide film with diluted hydrofluoric acid, metal impurities are removed.
【０００３】[0003]
【発明が解決しようとする課題】従来のＲＣＡ法におい
ては、Ｃｕのような水素より酸化還元電位が高い金属
は、希弗酸処理ではほとんど除去することができなかっ
た。また、処理液としてオゾン水を用い、基板を酸化さ
せ、希弗酸で酸化膜を除去する洗浄方法もあるが、この
方法でも金属不純物の除去には限界があった。本発明
は、上記課題に鑑みなされたものであり、洗浄時間の短
縮を図りつつ基板の高洗浄化を達成することを目的とす
る。In the conventional RCA method, a metal such as Cu having a higher redox potential than hydrogen could hardly be removed by dilute hydrofluoric acid treatment. There is also a cleaning method in which ozone water is used as a processing liquid, the substrate is oxidized, and the oxide film is removed with dilute hydrofluoric acid, but this method also has a limit in removing metal impurities. The present invention has been made in view of the above problems, and an object of the present invention is to achieve high cleaning of a substrate while shortening the cleaning time.
【０００４】[0004]
【課題を解決するための手段】本発明は、上記課題を解
決するため、２種以上の処理液を順次用いてウェハを洗
浄する工程を２回以上繰り返す。In order to solve the above-mentioned problems, the present invention repeats the step of cleaning a wafer two or more times by sequentially using two or more kinds of processing solutions.
【０００５】[0005]
【発明の実施の形態】以下、図面を参照して、本発明の
実施の形態を説明する。図１は、本発明の実施例を示
す。第１の処理液として酸化剤であるオゾン水を用い、
第２の処理液として純水を用い、第３の処理液として酸
化膜エッチング剤である希弗酸を用いる。まず、例えば
シリコンウェハをオゾン水で２０秒間処理し、ウェハ表
面上に酸化膜を形成する。次に、純水でウェハをリンス
する。続いて、ウェハを希弗酸で２秒間処理し、表面の
酸化膜を除去する。その後、再び純水でウェハをリンス
する。このシーケンスを例えば３回繰り返し、最後にウ
ェハの乾燥を行う。これらの処理時間は、酸化膜の膜厚
が５ｎｍであるとの仮定で定めた値であって、それ以下
の値例えば３ｎｍであるならばこれよりも小さい値でよ
い。また、図１ではこのシーケンスを３回繰り返してい
るが、処理シーケンスを構成する各処理の処理時間を従
来よりも短くし、そのシーケンスを２回以上繰り返し、
各処理ごとの処理時間の総和が１回のシーケンスで処理
する場合の各処理の処理時間と同程度の時間になるので
あればよい。例えば、オゾン水処理を３０秒間、希弗酸
処理を３秒間とした上で図１に示したシーケンスを２回
繰り返してもよい。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment of the present invention. Ozone water, which is an oxidizer, is used as the first treatment liquid,
Pure water is used as the second processing liquid, and diluted hydrofluoric acid that is an oxide film etching agent is used as the third processing liquid. First, for example, a silicon wafer is treated with ozone water for 20 seconds to form an oxide film on the wafer surface. Next, the wafer is rinsed with pure water. Subsequently, the wafer is treated with dilute hydrofluoric acid for 2 seconds to remove the oxide film on the surface. After that, the wafer is rinsed again with pure water. This sequence is repeated, for example, three times, and finally the wafer is dried. These processing times are values determined on the assumption that the film thickness of the oxide film is 5 nm, and may be smaller than this value, for example, 3 nm or less. In addition, although this sequence is repeated three times in FIG. 1, the processing time of each process constituting the processing sequence is made shorter than before, and the sequence is repeated twice or more.
It suffices that the total processing time for each processing be approximately the same as the processing time for each processing when processing is performed in one sequence. For example, the ozone water treatment may be performed for 30 seconds and the diluted hydrofluoric acid treatment may be performed for 3 seconds, and then the sequence shown in FIG. 1 may be repeated twice.
【０００６】本実施例の効果を確かめるための実験を行
い、その結果を以下に示す。実験には、強制的に金属及
びパーティクルで汚染されたウェハを用いた。それらの
ウェハの金属不純物のイニシャル値は、Ｎａ，Ｆｅ，Ｎ
ｉ，Ａｌ，Ｃｕ，Ｃｒ，Ｚｎがそれぞれ１Ｅ１３ａｔｏ
ｍｓ／ｃｍ2 オーダーであり、パーティクルの初期値
は、約５０００個／６インチウェハである。実験には、
枚葉式洗浄装置を用い、ウェハを支持装置に支持して回
転させ、ノズルから薬液をウェハ上に供給することで各
種の処理を行った。いずれの処理も大気中で行った。オ
ゾン水処理６０秒→純水リンス→ＨＦ処理６秒→純水リ
ンス→乾燥の順序で行う従来の洗浄方法と、図１に示し
た３回処理シーケンスの本発明の洗浄方法とにより、ウ
ェハを洗浄し、それぞれの処理後のウェハ上の不純物分
析を行った。３回処理における処理時間の合計と、従来
の１回のシーケンスで処理する場合の処理時間とは同一
にしてある。オゾン水処理に用いるオゾン水のオゾン濃
度は、５ないし２５ｐｐｍである。この範囲の濃度で
は、結果に濃度による差異は生じなかった。純水リンス
は、例えば市販の超純水を用いて行う。ＨＦ処理は、弗
酸の濃度が０．２５ないし１０％の薬液を用いる。例え
ば１０％の薬液による６秒間のＨＦ処理は、前述のよう
に酸化膜厚を５ｎｍエッチングする条件である。An experiment was conducted to confirm the effect of this embodiment, and the results are shown below. The experiments used wafers that were forcibly contaminated with metal and particles. The initial values of metal impurities of those wafers are Na, Fe, N
i, Al, Cu, Cr, Zn are each 1E13ato
It is on the order of ms / cm 2 , and the initial value of particles is about 5000/6 inch wafers. For the experiment,
Using a single wafer cleaning apparatus, the wafer was supported by a supporting apparatus and rotated, and various treatments were performed by supplying a chemical solution onto the wafer from a nozzle. Both treatments were performed in the atmosphere. The wafer is cleaned by the conventional cleaning method of performing 60 seconds of ozone water treatment → pure water rinse → 6 seconds of HF treatment → pure water rinse → drying and the cleaning method of the present invention of the three-time treatment sequence shown in FIG. After cleaning, impurities on the wafer after each treatment were analyzed. The total processing time in the three-time processing is the same as the processing time in the case of performing the conventional one-time processing. The ozone concentration of ozone water used for ozone water treatment is 5 to 25 ppm. At concentrations in this range, the results did not differ by concentration. The pure water rinse is performed using, for example, commercially available ultrapure water. For the HF treatment, a chemical solution having a hydrofluoric acid concentration of 0.25 to 10% is used. For example, the HF treatment for 6 seconds with a 10% chemical solution is a condition for etching the oxide film thickness by 5 nm as described above.
【０００７】さらに、オゾン水に代えてイオン水やコリ
ン添加のアルカリ過酸化水素水溶液を用いて同様の実験
を行った。イオン水は、例えば水を電気分解して作成し
た酸性やアルカリ性のイオン水である。これらの結果を
以下に示す。以下の数値の単位は、１Ｅ１０ａｔｏｍｓ
／ｃｍ2 である。Further, a similar experiment was conducted using ionized water or an aqueous solution of alkaline hydrogen peroxide containing choline instead of ozone water. Ionized water is, for example, acidic or alkaline ionized water produced by electrolyzing water. The results are shown below. The unit of the following numerical values is 1E10atoms
/ Cm 2 .
【０００８】[0008]
【表１】 [Table 1]
【０００９】この表から分かるように、短時間の処理を
繰り返すことにより、いずれの場合も処理時間の合計が
従来の処理時間と同一でありながら、金属不純物をより
多く除去することができる。As can be seen from this table, by repeating the treatment for a short time, it is possible to remove more metal impurities while the total treatment time is the same as the conventional treatment time in any case.
【００１０】パーティクルについても同様の洗浄シーケ
ンスにて洗浄をしたところ、オゾン水１回処理では１７
１３個／６インチウェハに対し３回処理では２４４個／
６インチウェハ、コリン添加のアルカリ・過酸化水素水
溶液１回処理では１０４３個／６インチウェハに対し３
回処理では１５８個／６インチウェハ、イオン水のアル
カリ水を用いた１回処理では７１３個／６インチウェハ
に対し３回処理では３３４個／６インチウェハという結
果が得られた。短時間で数回処理を繰り返す本発明の洗
浄方法を用いると、従来行われていた１回処理よりも高
いパーティクル除去効果が得られる。Particles were also cleaned in the same cleaning sequence.
13 pieces / 6 inch wafers 244 pieces /
6-inch wafers, 3 times for 1043 / 6-inch wafers in one treatment of alkaline / hydrogen peroxide solution with choline added
The results obtained were 158/6 inch wafers in the single treatment, 713/6 inch wafers in the single treatment using the alkaline water of the ion water, and 334/6 inch wafers in the third treatment. By using the cleaning method of the present invention in which the treatment is repeated several times in a short time, a particle removal effect higher than that of the conventionally performed single treatment can be obtained.
【００１１】次に、バッチディップ式洗浄についての評
価を行った。コリン添加のアルカリ・過酸化水素水溶液
７０℃１０分→水洗→ＨＦ３分→水洗→乾燥の１回処理
と、図２に示すように、コリン添加アルカリ過酸化水素
水溶液７０℃３分→水洗→ＨＦ１分→水洗を処理時間の
合計が１回処理の場合と同じになるように３回繰り返し
た後、乾燥を行った。いずれの処理も大気中で行われ
た。水洗では例えば純水を用いた。この結果、金属除去
に関しては、Next, the batch dip type cleaning was evaluated. Choline-added alkaline / hydrogen peroxide aqueous solution 70 ° C. 10 minutes → washing → HF 3 minutes → water washing → drying once, and as shown in FIG. 2, choline-added alkaline hydrogen peroxide aqueous solution 70 ° C. 3 minutes → water washing → HF1 The process of washing with water was repeated 3 times so that the total treatment time was the same as in the case of one treatment, followed by drying. Both treatments were performed in the atmosphere. Pure water was used for washing with water. As a result, regarding metal removal,
【００１２】[0012]
【表２】 という結果が得られた。また、パーティクル除去につい
ては、従来の１回処理で１５７８個／６インチウェハに
対し３回処理で１７７個／６インチウェハとなった。こ
のように、本発明の繰り返し処理により高い除去効果が
得られる。なお、コリン添加のアルカリ・過酸化水素水
水溶液による処理は７０℃で行ったが、この温度に限ら
れるものではなく、例えば常温から７０℃の範囲であれ
ば同様の効果が得られた。[Table 2] The result was obtained. Regarding the removal of particles, the number of wafers was 1578/6 inch wafers in the conventional one-time processing, and 177/6 inch wafers were processed in three times. Thus, a high removal effect can be obtained by the repeated treatment of the present invention. The treatment with the aqueous solution of alkali / hydrogen peroxide containing choline was carried out at 70 ° C., but the temperature is not limited to this, and similar effects can be obtained in the range of room temperature to 70 ° C., for example.
【００１３】また、ＲＣＡ洗浄は、従来、純水：アンモ
ニア水：過酸化水素水＝５：１：１の薬液を用いたＳＣ
１処理を１０分間行い、次に５ないし２０分間純水リン
スを行い、その後ＨＦ：過酸化水素水＝１：５０の薬液
による処理を１５秒間行い、５ないし２０分間純水リン
スを行い、さらに純水：塩酸：過酸化水素水＝６：１：
１の薬液によるＳＣ２処理を１０ないし１５分間行うと
いう手順によりなされる。これを本発明の処理方法を用
いて、５分間のＳＣ１処理→純水リンス→８秒間のＨＦ
と過酸化水素水による処理→純水リンス→５分間のＳＣ
２処理を２回繰り返すと、従来以上の洗浄効果を上げる
ことが可能になる。Conventionally, RCA cleaning uses SC using a chemical solution of pure water: ammonia water: hydrogen peroxide water = 5: 1: 1.
1 treatment for 10 minutes, then 5 to 20 minutes of pure water rinsing, and then treatment with a chemical solution of HF: hydrogen peroxide solution = 1: 50 for 15 seconds, 5 to 20 minutes of pure water rinsing, and Pure water: hydrochloric acid: hydrogen peroxide solution = 6: 1:
The SC2 treatment with the first chemical solution is performed for 10 to 15 minutes. Using the treatment method of the present invention, this is subjected to SC1 treatment for 5 minutes → pure water rinse → HF for 8 seconds.
And treatment with hydrogen peroxide water → pure water rinse → SC for 5 minutes
By repeating the two treatments twice, it is possible to improve the cleaning effect more than before.
【００１４】なお、本発明は上述の実施例で示した処理
シーケンスや繰り返し回数や処理時間に限られるもので
はなく、処理シーケンスを構成する各処理の処理時間を
従来よりも短くし、そのシーケンスを２回以上繰り返
し、各処理ごとの処理時間の総和が１回のシーケンスで
処理する場合と同程度の時間になるのであればよい。The present invention is not limited to the processing sequence, the number of repetitions and the processing time shown in the above-mentioned embodiment, but the processing time of each processing constituting the processing sequence is made shorter than before and the sequence is It is only necessary that the processing is repeated twice or more, and the total processing time for each processing is about the same as when processing is performed in one sequence.
【００１５】[0015]
【発明の効果】以上説明したように、本発明によれば、
各処理の処理時間を短縮して処理手順を数回繰り返して
ウェハの洗浄処理を行うことにより、洗浄度を高くしつ
つ洗浄時間を短くすることができる。As described above, according to the present invention,
By shortening the processing time of each processing and repeating the processing procedure several times to perform the cleaning processing of the wafer, it is possible to shorten the cleaning time while increasing the cleaning degree.
【図１】本発明の第１の洗浄方法の処理手順を表す図。FIG. 1 is a diagram showing a processing procedure of a first cleaning method of the present invention.
【図２】本発明の第２の洗浄方法の処理手順を表す図。FIG. 2 is a diagram showing a processing procedure of a second cleaning method of the present invention.
オゾン水処理…オゾン水処理、 ＨＦ処理…希弗酸処理。 Ozone water treatment ... Ozone water treatment, HF treatment ... Dilute hydrofluoric acid treatment.
Claims (6)
洗浄する工程を連続して２回以上繰り返すことを特徴と
する半導体装置の製造方法。1. A method of manufacturing a semiconductor device, wherein a step of cleaning a wafer by sequentially using two or more kinds of processing solutions is repeated twice or more.
リン添加のアルカリ・過酸化水素水、アンモニア・過酸
化水素水であるＡＰＭ、塩酸・過酸化水素水であるＨＰ
Ｍ、ＨＦとＮＨ4 ＦとＨ2 Ｏの混合液であるＢＨＦ、Ｈ
ＦとＨ2 Ｏの混合液であるＤＨＦ、ＨＦとＨ2 Ｏ2 とＨ
2 Ｏ混合液のいずれかであることを特徴とする請求項１
記載の半導体装置の製造方法。2. The treatment liquid is ozone water, ionic water, choline-added alkali / hydrogen peroxide water, ammonia / hydrogen peroxide water APM, and hydrochloric acid / hydrogen peroxide water HP.
M, HF and NH 4 F and H 2 O mixed solution BHF and H
DHF which is a mixture of F and H 2 O, HF and H 2 O 2 and H
2. It is any one of 2 O mixed liquids.
The manufacturing method of the semiconductor device described in the above.
それ以下の時間施し、次に純水処理を施し、次に希弗酸
処理を２秒あるいはそれ以下の時間施し、次に純水処理
を施す工程を連続して２回以上繰り返すことを特徴とす
る請求項２記載の半導体装置の製造方法。3. A wafer is subjected to ozone water treatment for 20 seconds or less, then to pure water treatment, then to dilute hydrofluoric acid treatment for 2 seconds or less, and then to pure water treatment. The method of manufacturing a semiconductor device according to claim 2, wherein the step of applying is repeated twice or more continuously.
それ以下の時間施し、次に純水処理を施し、次に希弗酸
処理を２秒あるいはそれ以下の時間施し、次に純水処理
を施す工程を連続して２回以上繰り返すことを特徴とす
る請求項２記載の半導体装置の製造方法。4. A wafer is subjected to ion water treatment for 20 seconds or less, then to pure water treatment, then to dilute hydrofluoric acid treatment for 2 seconds or less, and then to pure water treatment. The method of manufacturing a semiconductor device according to claim 2, wherein the step of applying is repeated twice or more continuously.
水素水処理を３分間あるいはそれ以下の時間施し、次に
純水処理を施し、次に希弗酸処理を１分間あるいはそれ
以下の時間施し、次に純水処理を施す工程を連続して２
回以上繰り返すことを特徴とする請求項２記載の半導体
装置の製造方法。5. A wafer is treated with an alkali / hydrogen peroxide solution containing choline for 3 minutes or less, then with pure water, and then with dilute hydrofluoric acid for 1 minute or less. , 2 consecutive steps of applying pure water treatment
The method for manufacturing a semiconductor device according to claim 2, wherein the method is repeated one or more times.
れ以下の時間施し、次に純水処理を施し、次に希弗酸処
理を８秒間あるいはそれ以下の時間施し、次に純水処理
を施し、次にＳＣ２処理を５分間あるいはそれ以下の時
間施す工程を連続して２回以上繰り返すことを特徴とす
る請求項２記載の半導体装置の製造方法。6. A wafer is subjected to SC1 treatment for 5 minutes or less, then to pure water treatment, then to dilute hydrofluoric acid treatment for 8 seconds or less, and then to pure water treatment. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the step of applying SC2 treatment for 5 minutes or less is repeated twice or more continuously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13502996A JPH09321009A (en) | 1996-05-29 | 1996-05-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13502996A JPH09321009A (en) | 1996-05-29 | 1996-05-29 | Method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09321009A true JPH09321009A (en) | 1997-12-12 |
Family
ID=15142283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13502996A Pending JPH09321009A (en) | 1996-05-29 | 1996-05-29 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09321009A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002050634A (en) * | 2000-04-28 | 2002-02-15 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
| JP2002329691A (en) * | 2001-04-27 | 2002-11-15 | Shin Etsu Handotai Co Ltd | Method of cleaning silicon wafer |
| KR20030052817A (en) * | 2001-12-21 | 2003-06-27 | 동부전자 주식회사 | Method for preprocessing a gate oxidation layer of a semiconductor device |
| KR20030056224A (en) * | 2001-12-27 | 2003-07-04 | 동부전자 주식회사 | a method for cleaning the surface of a wafer |
| US6848455B1 (en) | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
| JP2009543344A (en) * | 2006-06-28 | 2009-12-03 | ラム リサーチ コーポレーション | Post-etch wafer surface cleaning with liquid meniscus |
| US8138101B2 (en) | 2000-04-28 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| WO2015174004A1 (en) * | 2014-05-15 | 2015-11-19 | 信越半導体株式会社 | Wafer cleaning method |
| WO2023017691A1 (en) * | 2021-08-12 | 2023-02-16 | 株式会社Sumco | Semiconductor wafer cleaning method, and semiconductor wafer manufacturing method |
-
1996
- 1996-05-29 JP JP13502996A patent/JPH09321009A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002050634A (en) * | 2000-04-28 | 2002-02-15 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
| US8138101B2 (en) | 2000-04-28 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| US8951902B2 (en) | 2000-04-28 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Methods of removing contaminant impurities during the manufacture of a thin film transistor by applying water in which ozone is dissolved |
| JP2002329691A (en) * | 2001-04-27 | 2002-11-15 | Shin Etsu Handotai Co Ltd | Method of cleaning silicon wafer |
| KR20030052817A (en) * | 2001-12-21 | 2003-06-27 | 동부전자 주식회사 | Method for preprocessing a gate oxidation layer of a semiconductor device |
| KR20030056224A (en) * | 2001-12-27 | 2003-07-04 | 동부전자 주식회사 | a method for cleaning the surface of a wafer |
| US6848455B1 (en) | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
| JP2009543344A (en) * | 2006-06-28 | 2009-12-03 | ラム リサーチ コーポレーション | Post-etch wafer surface cleaning with liquid meniscus |
| WO2015174004A1 (en) * | 2014-05-15 | 2015-11-19 | 信越半導体株式会社 | Wafer cleaning method |
| JP2015220284A (en) * | 2014-05-15 | 2015-12-07 | 信越半導体株式会社 | Wafer cleaning method |
| WO2023017691A1 (en) * | 2021-08-12 | 2023-02-16 | 株式会社Sumco | Semiconductor wafer cleaning method, and semiconductor wafer manufacturing method |
| TWI825859B (en) * | 2021-08-12 | 2023-12-11 | 日商Ｓｕｍｃｏ股份有限公司 | Methods for cleaning and manufacturing semiconductor wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08264500A (en) | Cleaning of substrate | |
| US6513538B2 (en) | Method of removing contaminants from integrated circuit substrates using cleaning solutions | |
| JPH0426120A (en) | Treating method for semiconductor substrate | |
| US20050139230A1 (en) | Method for cleaning semiconductor wafers | |
| JP2006080501A (en) | Cleaning solution and method of cleaning semiconductor substrate | |
| CN112928017A (en) | Cleaning method for effectively removing metal on surface of silicon wafer | |
| JPH09321009A (en) | Method for manufacturing semiconductor device | |
| JP3535820B2 (en) | Substrate processing method and substrate processing apparatus | |
| JPH10183185A (en) | Cleansing liquid, its formulation and production, cleansing, and production of semiconductor substrate | |
| KR20050001332A (en) | Process for the wet-chemical surface treatment of a semiconductor wafer | |
| EP1562226B1 (en) | A method for removing oxides from a Germanium semiconductor substrate surface | |
| JP3454302B2 (en) | Semiconductor substrate cleaning method | |
| JP2003297792A (en) | Method for cleaning substrate, cleaner and dryer, and method for manufacturing semiconductor device | |
| JPH07321080A (en) | Method for cleaning silicon wafer | |
| JPH0750281A (en) | Cleaning method for silicon wafer | |
| JP2005210075A (en) | Cleaning method of semiconductor wafer | |
| JP3419439B2 (en) | Method for cleaning semiconductor substrate | |
| KR0171983B1 (en) | Wafer cleaning method | |
| JP2001326209A (en) | Method for treating surface of silicon substrate | |
| JPH10199847A (en) | Method of cleaning wafer | |
| RU2383965C1 (en) | Method of treating silicon equipment | |
| JPH07153728A (en) | Silicon wafer surface treatment method by hot pure water cleaning | |
| JP2001319914A (en) | Method of manufacturing semiconductor device | |
| JPH04103124A (en) | Removal of pollutant from semiconductor substrate | |
| KR100199373B1 (en) | Method of cleaning wafer |