JP2005236288A - 複数のメサを有するラテラル導電型ショットキーダイオード - Google Patents
複数のメサを有するラテラル導電型ショットキーダイオード Download PDFInfo
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- JP2005236288A JP2005236288A JP2005039132A JP2005039132A JP2005236288A JP 2005236288 A JP2005236288 A JP 2005236288A JP 2005039132 A JP2005039132 A JP 2005039132A JP 2005039132 A JP2005039132 A JP 2005039132A JP 2005236288 A JP2005236288 A JP 2005236288A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 143
- 239000002184 metal Substances 0.000 claims abstract description 143
- 239000004065 semiconductor Substances 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 43
- 239000004020 conductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 11
- 238000004513 sizing Methods 0.000 claims 1
- 230000020169 heat generation Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000009826 distribution Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】 本デバイスは複数のメサ領域を含み、これらのメサの上にショットキー接触金属層310が形成される。電流通路を短縮し、ショットキー接触金属層内の電流集中を減少させ、それによってデバイスの順方向抵抗を低下させるために、メサはオーミック接触金属層316,318によって分離されている。複数のメサは、互いに他から分離され、順方向抵抗を低下させるように、サイズ及び形状が最適化されている。代替として、若干のメサは指形であって、中央メサまたはブリッジメサと交叉し、また若干の、または全てのオーミック接触金属層は指形メサと指を組合わせた形状である。本ショットキーダイオード300は、フリップチップ配列のサブマウントに取付けることができ、それによって更に順方向電圧を低下させ、電力散逸を改善し、そして熱生成を減少させる。
【選択図】 図3A
Description
102 基体
104 バッファ層
106 高ドープ半導体層
108 低ドープ半導体層
110 ショットキー接触金属層
112、118 ボンドパッド金属層
114 不動態化層
116 オーミック接触金属層
300 ショットキーダイオード
302 基体
304 バッファ層
306 高ドープ層
308 低ドープ層
310 ショットキー接触金属層
312 ボンドパッド金属層
316、318 オーミック接触金属層
320、322 はんだバンプ
400 サブマウント構造
402 端子
404 端子領域
410、412 接触層
420、422 接触領域
500 サブマウント
502 サブマウント基体
510、512 接触領域
520、522 共通接点
530、532 バイア
540、542 端子
600 ショットキーダイオード
602 基体
604 バッファ層
606 高ドープ層
608 低ドープ層
610 ショットキー接触金属層
612、618 ボンドパッド金属層
616 オーミック接触金属層
624 ブリッジメサ
626 中央メサ
628 指形メサ
640 仮想矩形
Claims (13)
- ショットキーダイオード半導体デバイスであって、
第1の接触表面を限定している第1の半導体層(306)と、
上記第1の接触表面から突出し、上記第1の接触表面の少なくとも一部分によって互いに他から分離されている複数のメサと、
を含み、
上記メサは少なくとも部分的に第2の半導体層(308)を形成し、上記各メサは第2の接触表面を限定し、上記第1の半導体層(306)は上記第2の半導体層(308)と同一の導電型であって、上記第2の半導体層(308)よりも重度にドープされており、
上記第1の接触表面と実質的にオーミック接触するように配置されている1またはそれ以上の第1の接触金属層(316)と、
上記各メサの上記第2の接触表面とそれぞれ接触するように配置され、上記第2の接触表面との間にショットキー接触を形成している複数の第2の接触金属と、
を更に含むことを特徴とするショットキーダイオード半導体デバイス。 - 上記各メサは、上記ショットキーダイオード半導体デバイスの順方向動作電圧を最小にするような大きさに作られていることを特徴とする請求項1に記載のショットキーダイオード半導体デバイス。
- 上記1またはそれ以上の第1の接触金属の少なくとも一部は、少なくとも若干の上記メサの間を伸びていることを特徴とする請求項1または2に記載のショットキーダイオード半導体デバイス。
- 上記各メサは、上記第1の半導体層の一部分を含むことを特徴とする請求項1乃至3の何れか1つに記載のショットキーダイオード半導体デバイス。
- 少なくとも若干の上記メサは少なくとも若干の他のメサと交叉し、入り組んだ周縁を有する形状を限定していることを特徴とする請求項1乃至4の何れか1つに記載のショットキーダイオード半導体デバイス。
- 少なくとも若干の上記メサは少なくとも若干の他のメサと交叉して主部分(626)及び上記主部分から伸びる複数の延長部分(628)を有する形状を限定し、上記延長部分は上記第1の接触表面の領域(632)と指を組合わせた形状になっていることを特徴とする請求項1乃至5の何れか1つに記載のショットキーダイオード半導体デバイス。
- 上記主部分は少なくとも第1の方向に細長く、少なくとも若干の上記延長部分は上記第1の方向を横切る第2の方向に細長いことを特徴とする請求項6に記載のショットキーダイオード半導体デバイス。
- 1またはそれ以上の第1及び第2の導体が、それぞれ、上記1またはそれ以上の第1の接触金属(316)及び第2の接触金属(310)に接続されていることを特徴とする請求項1乃至7の何れか1つに記載のショットキーダイオード半導体デバイス。
- 上記1またはそれ以上の第1及び第2の導体は、相互接続用バンプ(320、322)を含むことを特徴とする請求項8に記載のショットキーダイオード半導体デバイス。
- 請求項1乃至9の何れか1つに記載のショットキーダイオード半導体デバイス(300)のフリップチップアセンブリ、及び上記ショットキーダイオード半導体デバイスを取り付けるのに適するサブマウント構造(400)。
- 上記ショットキーダイオード半導体デバイスを取付けるための上面を有するサブマウント基体(502)と、
上記サブマウント表面の上面に露出され、1またはそれ以上の第1の接触金属(316)にそれぞれ電気的に接続されている1またはそれ以上の第1のサブマウント接点と、
上記サブマウント表面の上面に露出され、1またはそれ以上の第2の接触金属(310)にそれぞれ電気的に接続されている1またはそれ以上の第2のサブマウント接点と、
を含むことを特徴とする請求項10に記載のフリップチップアセンブリ。 - ショットキーダイオード半導体デバイスを形成する方法であって、
第1の半導体層(306)及び第2の半導体層(308)を含む半導体ボディを準備するステップを含み、上記両半導体層は同一の導電型であり、上記第1の半導体層(306)は上記第2の半導体層(308)よりも重度にドープされており、
上記半導体ボディの1またはそれ以上の領域をパターン化してエッチングし、第1の接触表面から突出し且つ上記第1の接触表面の少なくとも一部分によって互いに他から分離されている複数のメサを限定するステップを更に含み、上記メサは少なくとも部分的に上記第2の半導体層(308)を形成し、各メサは第2の接触表面を限定しており、
上記第1の接触表面と実質的にオーミック接触するように配置されている1またはそれ以上の第1の接触金属(316)を形成させるステップと、
上記各メサの上記第2の接触表面とそれぞれ接触し、上記各メサとショットキー接触するように配置されている複数の第2の接触金属(310)を形成させるステップと、
を更に含むことを特徴とする方法。 - 上記各メサを、上記ショットキーダイオード半導体デバイスの順方向動作電圧を最小にするような大きさに作るステップを含むことを特徴とする請求項12に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/780,363 US7084475B2 (en) | 2004-02-17 | 2004-02-17 | Lateral conduction Schottky diode with plural mesas |
US10/780363 | 2004-02-17 |
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EP (1) | EP1564815B1 (ja) |
JP (1) | JP5150803B2 (ja) |
CN (1) | CN100517763C (ja) |
AT (1) | ATE392717T1 (ja) |
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JP2012195618A (ja) * | 2005-01-06 | 2012-10-11 | Velox Semiconductor Corp | 窒化ガリウム半導体素子 |
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JP2012195618A (ja) * | 2005-01-06 | 2012-10-11 | Velox Semiconductor Corp | 窒化ガリウム半導体素子 |
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Also Published As
Publication number | Publication date |
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DE602005006025T2 (de) | 2009-05-07 |
CN100517763C (zh) | 2009-07-22 |
TW201230143A (en) | 2012-07-16 |
US7084475B2 (en) | 2006-08-01 |
US20050179104A1 (en) | 2005-08-18 |
EP1564815B1 (en) | 2008-04-16 |
TWI493597B (zh) | 2015-07-21 |
CN1658402A (zh) | 2005-08-24 |
JP5150803B2 (ja) | 2013-02-27 |
TWI411008B (zh) | 2013-10-01 |
EP1564815A1 (en) | 2005-08-17 |
ATE392717T1 (de) | 2008-05-15 |
TW200601396A (en) | 2006-01-01 |
FR2870046B1 (fr) | 2008-01-18 |
DE602005006025D1 (de) | 2008-05-29 |
FR2870046A1 (fr) | 2005-11-11 |
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