KR960704991A - 활성화된 연마 조성물(Activated polishing compositions) - Google Patents
활성화된 연마 조성물(Activated polishing compositions)Info
- Publication number
- KR960704991A KR960704991A KR1019960701019A KR19960701019A KR960704991A KR 960704991 A KR960704991 A KR 960704991A KR 1019960701019 A KR1019960701019 A KR 1019960701019A KR 19960701019 A KR19960701019 A KR 19960701019A KR 960704991 A KR960704991 A KR 960704991A
- Authority
- KR
- South Korea
- Prior art keywords
- cation
- abrasive
- composition
- base
- basic
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
산화물이 기본 연마제만을 사용하는 경우보다 높은 연마속도를 나타내는 제2양이온의 부가에 의해 기본 연마제가 활성화되는, 표면, 특히 집적 회로 연마에 적합한 활성화된 조성물을 제조하는 방법 및 이로부터 생성된 조성물이 기술되어 있다. 활성화는 pH가 활성화 양이온의 기본 연마제 표면으로의 흡착에 적합한 수준인 수성매질 속에서 주기적 충격 동안 기본 연마제로의 활성화 양이온의 화학적 흡착에 의해 수행된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (16)
- pH가 양이온의 기본 연마제 표면으로의 흡착에 적합한 수준인 수성 매질 속에서 기본 연마제와 양이온 함유 화합물을 주기적 충격에 노출시킴을 포함하여, 산화물이 기본 연마제만을 사용하는 경우보다는 높은 연마 속도를 나타내는 양이온의 기본 연마제 표면으로의 화학적 흡착에 의해서 기본 연마제를 활성화시키는, 물품연마에 적합한 조성물을 제조하는 방법.
- 제1항에 있어서, 기본 연마제와 양이온 함유 화합물을 공밀링함으로써 주기적 충격에 노출시키는 방법.
- 제2항에 있어서, 양이온 함유 화합물이 밀링 공정에 사용되는 밀링 연마제 속에 존재하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 기본 연마제가 SiO2인 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 양이온이 Ce4+인 방법.
- 제4항에 있어서, 양이온이 Ce4+인 방법.
- 제1항 내지 제3항 중의 어느 한 항에 있어서, 양이온이 Zr4+인 방법.
- 제4항에 있어서, 양이온이 Zr4+인 방법.
- 산화물이 기본 연마제만을 사용하는 경우보다는 높은 연마속도를 나타내는 양이온의 기본 연마제 표면으로의 화학적 흡착(이는 pH가 양이온의 기본 연마제 표면으로의 흡착에 적합한 수준인 수성 매질 속에서 기본 연마제와 양이온 함유 화합물을 주기적 충격에 노출시킴으로써 수행된다)에 의해 활성화된 기본 연마제를 포함하는, 물품 연마에 적합한 조성물.
- 제9항에 있어서, 기본 연마제와 양이온 함유 화합물을 공밀링시킴으로써 주기적 충격에 노출시키는, 물품 연마에 적합한 조성물.
- 제10항에 있어서, 양이온 함유 화합물이 밀링 공정에 사용되는 밀링 연마제 속에 존재하는, 물품 연마에 적합한 조성물.
- 제9항 내지 제11항 중의 어느 한 항에 있어서, 기본 연마제가 SiO2인, 물품 연마에 적합한 조성물.
- 제9항 내지 제11항 중의 어느 한 항에 있어서, 양이온이 Ce4+인 물품 연마에 적합한 조성물.
- 제12항에 있어서, 양이온이 Ce4+인, 물품 연마에 적합한 조성물.
- 제9항 내지 제11항 중의 어느 한 항에 있어서, 양이온이 Zr4+인, 물품 연마에 적합한 조성물.
- 제12항에 있어서, 양이온이 Zr4+인, 물품 연마에 적합한 조성물.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8/116,322 | 1993-09-03 | ||
US08/116,322 US5382272A (en) | 1993-09-03 | 1993-09-03 | Activated polishing compositions |
US08/116,322 | 1993-09-03 | ||
PCT/US1994/009845 WO1995006690A1 (en) | 1993-09-03 | 1994-09-02 | Activated polishing compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960704991A true KR960704991A (ko) | 1996-10-09 |
KR100215939B1 KR100215939B1 (ko) | 1999-08-16 |
Family
ID=22366501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960701019A KR100215939B1 (ko) | 1993-09-03 | 1994-09-02 | 활성화된 연마 조성물 |
Country Status (9)
Country | Link |
---|---|
US (2) | US5382272A (ko) |
EP (1) | EP0717762B1 (ko) |
JP (1) | JP2857722B2 (ko) |
KR (1) | KR100215939B1 (ko) |
CN (1) | CN1042550C (ko) |
DE (1) | DE69427538T2 (ko) |
MY (1) | MY111131A (ko) |
SG (1) | SG43327A1 (ko) |
WO (1) | WO1995006690A1 (ko) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
US5605490A (en) * | 1994-09-26 | 1997-02-25 | The United States Of America As Represented By The Secretary Of The Army | Method of polishing langasite |
TW274625B (ko) * | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
US5693239A (en) * | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
US6135856A (en) * | 1996-01-19 | 2000-10-24 | Micron Technology, Inc. | Apparatus and method for semiconductor planarization |
US5899799A (en) * | 1996-01-19 | 1999-05-04 | Micron Display Technology, Inc. | Method and system to increase delivery of slurry to the surface of large substrates during polishing operations |
US5948697A (en) * | 1996-05-23 | 1999-09-07 | Lsi Logic Corporation | Catalytic acceleration and electrical bias control of CMP processing |
US5916819A (en) * | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US6110396A (en) * | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US5756398A (en) * | 1997-03-17 | 1998-05-26 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
AU7147798A (en) | 1997-04-23 | 1998-11-13 | Advanced Chemical Systems International, Inc. | Planarization compositions for cmp of interlayer dielectrics |
US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
US5770103A (en) * | 1997-07-08 | 1998-06-23 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
CN1116372C (zh) * | 1997-07-25 | 2003-07-30 | 因芬尼昂技术股份公司 | 半导体基片用的抛光剂 |
US5891205A (en) * | 1997-08-14 | 1999-04-06 | Ekc Technology, Inc. | Chemical mechanical polishing composition |
JPH11256141A (ja) * | 1998-03-12 | 1999-09-21 | Sony Corp | 研磨スラリーおよび研磨方法 |
US6435947B2 (en) | 1998-05-26 | 2002-08-20 | Cabot Microelectronics Corporation | CMP polishing pad including a solid catalyst |
US6177026B1 (en) | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
US5928962A (en) * | 1998-06-01 | 1999-07-27 | Motorola, Inc. | Process for forming a semiconductor device |
TW455626B (en) * | 1998-07-23 | 2001-09-21 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
US6468909B1 (en) | 1998-09-03 | 2002-10-22 | Micron Technology, Inc. | Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions |
US6551367B2 (en) | 1998-09-22 | 2003-04-22 | Cheil Industries Inc. | Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing |
US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
FR2792643B1 (fr) | 1999-04-22 | 2001-07-27 | Clariant France Sa | Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique |
JP3099002B1 (ja) * | 1999-06-25 | 2000-10-16 | 茂徳科技股▲ふん▼有限公司 | 2段階化学機械研磨方法 |
US6443812B1 (en) | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
DE10054345A1 (de) * | 2000-11-02 | 2002-05-08 | Degussa | Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung |
EP1234800A1 (de) * | 2001-02-22 | 2002-08-28 | Degussa Aktiengesellschaft | Wässrige Dispersion, Verfahren zu ihrer Herstellung und Verwendung |
US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
EP1594656B1 (en) * | 2003-02-18 | 2007-09-12 | Parker-Hannifin Corporation | Polishing article for electro-chemical mechanical polishing |
US7300478B2 (en) * | 2003-05-22 | 2007-11-27 | Ferro Corporation | Slurry composition and method of use |
KR100582771B1 (ko) * | 2004-03-29 | 2006-05-22 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
US20060205219A1 (en) * | 2005-03-08 | 2006-09-14 | Baker Arthur R Iii | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
US8022025B1 (en) | 2010-01-27 | 2011-09-20 | Nanophase Technologies Corporation | Heterocoagulate, and compositions and method for polishing and surface treatment |
JP5689324B2 (ja) * | 2011-01-13 | 2015-03-25 | 花王株式会社 | 非晶質ガラス基板用研磨液組成物 |
US9293339B1 (en) | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
CN108329842A (zh) * | 2018-01-22 | 2018-07-27 | 东旭科技集团有限公司 | 抛光液组合物及其制备方法和玻璃抛光方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2892797A (en) * | 1956-02-17 | 1959-06-30 | Du Pont | Process for modifying the properties of a silica sol and product thereof |
US3301646A (en) * | 1963-06-12 | 1967-01-31 | Harbison Walker Refractories | Method of making partially stabilized zirconia |
US3262766A (en) * | 1963-11-21 | 1966-07-26 | Grace W R & Co | Rare-earth oxides for polishing glass |
US3768989A (en) * | 1968-08-19 | 1973-10-30 | N Goetzinger | Process for the preparation of a rare earth oxide polishing composition |
US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
US4169337A (en) * | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
NL8006410A (nl) * | 1980-11-25 | 1982-06-16 | Philips Nv | Werkwijze voor de vervaardiging van geintegreerde optische golfgeleider circuits en circuits verkregen met deze werkwijze. |
US4436843A (en) * | 1982-12-17 | 1984-03-13 | Texaco Inc. | High-resilience polyurethane foams having improved resistance to shrinkage |
FR2549846B1 (fr) * | 1983-07-29 | 1986-12-26 | Rhone Poulenc Spec Chim | Nouvelle composition de polissage a base de cerium et son procede de fabrication |
US4769046A (en) * | 1985-07-25 | 1988-09-06 | Fujimi Kanmazai Kogyo Kabushiki Kaisha Of Japan | Process for polishing surface of memory hard disc |
DE3721058A1 (de) * | 1987-06-26 | 1989-01-05 | Bayer Ag | Verfahren zur herstellung von kalthaertenden polyurethan-weichformschaumstoffen |
US5228886A (en) * | 1990-10-09 | 1993-07-20 | Buehler, Ltd. | Mechanochemical polishing abrasive |
GB9126740D0 (en) * | 1991-12-17 | 1992-02-12 | Ici Plc | Polyol compositions |
US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
-
1993
- 1993-09-03 US US08/116,322 patent/US5382272A/en not_active Expired - Fee Related
-
1994
- 1994-09-02 MY MYPI94002305A patent/MY111131A/en unknown
- 1994-09-02 CN CN94193257A patent/CN1042550C/zh not_active Expired - Fee Related
- 1994-09-02 DE DE69427538T patent/DE69427538T2/de not_active Expired - Fee Related
- 1994-09-02 SG SG1996008396A patent/SG43327A1/en unknown
- 1994-09-02 JP JP7508250A patent/JP2857722B2/ja not_active Expired - Lifetime
- 1994-09-02 WO PCT/US1994/009845 patent/WO1995006690A1/en active IP Right Grant
- 1994-09-02 KR KR1019960701019A patent/KR100215939B1/ko not_active IP Right Cessation
- 1994-09-02 EP EP94927305A patent/EP0717762B1/en not_active Expired - Lifetime
- 1994-09-06 US US08/301,558 patent/US5480476A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5382272A (en) | 1995-01-17 |
EP0717762A1 (en) | 1996-06-26 |
CN1042550C (zh) | 1999-03-17 |
US5480476A (en) | 1996-01-02 |
KR100215939B1 (ko) | 1999-08-16 |
DE69427538T2 (de) | 2002-04-25 |
EP0717762B1 (en) | 2001-06-20 |
MY111131A (en) | 1999-08-30 |
WO1995006690A1 (en) | 1995-03-09 |
CN1130392A (zh) | 1996-09-04 |
EP0717762A4 (en) | 1997-06-11 |
DE69427538D1 (de) | 2001-07-26 |
JP2857722B2 (ja) | 1999-02-17 |
SG43327A1 (en) | 1997-10-17 |
JPH08512357A (ja) | 1996-12-24 |
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