KR960042203A - Phase inversion mask and manufacturing method thereof - Google Patents

Phase inversion mask and manufacturing method thereof Download PDF

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Publication number
KR960042203A
KR960042203A KR1019950014334A KR19950014334A KR960042203A KR 960042203 A KR960042203 A KR 960042203A KR 1019950014334 A KR1019950014334 A KR 1019950014334A KR 19950014334 A KR19950014334 A KR 19950014334A KR 960042203 A KR960042203 A KR 960042203A
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KR
South Korea
Prior art keywords
film
mask
etching
forming
high reflectance
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KR1019950014334A
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Korean (ko)
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KR0165402B1 (en
Inventor
임성출
문성용
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김광호
삼성전자 주식회사
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Priority to KR1019950014334A priority Critical patent/KR0165402B1/en
Publication of KR960042203A publication Critical patent/KR960042203A/en
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Publication of KR0165402B1 publication Critical patent/KR0165402B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

마스크의 정렬키 영역의 반사율을 증가시킨 위상반전 마스크와 그 제조방법에 관하여 개시한다. 본 발명의 위상반전 마스크는 마스크 기판상에 패턴형성 영역과 비패턴형성 영역을 갖는 위상반전 마스크에 있어서, 상기 비패턴형성 영역의 소정부분에 고반사율막을 갖는 정렬키 패턴을 구비한다. 본 발명에 의하면, 위상반전 마스크의 정렬키 영역을 고반사율막으로 형성하여, 이에 따라 정렬키 영역이 고반사율을 가직 되어 스텝퍼에서의 정렬이 용이하다.Disclosed are a phase inversion mask and a method of manufacturing the same in which the reflectance of the alignment key region of the mask is increased. The phase shift mask according to the present invention has a phase shift mask having a pattern formation region and a non-pattern formation region on a mask substrate, and includes an alignment key pattern having a high reflectivity film at a predetermined portion of the non-pattern formation region. According to the present invention, the alignment key region of the phase inversion mask is formed of a high reflectivity film, whereby the alignment key region has a high reflectance, so that alignment at the stepper is easy.

Description

위상반전 마스크 및 그 제조방법Phase inversion mask and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 본 발명에 따른 위상반전 마스크의 단면도이다.4 is a cross-sectional view of a phase inversion mask according to the present invention.

Claims (7)

마스크 기판 상에 패턴형성 영역과 비패턴형성 영역을 갖는 위상반전 마스크에 있어서, 상기 비패턴형성영역의 소정부분에 고반사율막을 갖는 정렬키 패턴을 구비하는 것을 특징으로 하는 위상반전 마스크.A phase inversion mask having a pattern formation region and a non-pattern formation region on a mask substrate, comprising: an alignment key pattern having a high reflectivity film at a predetermined portion of the non-pattern formation region. 제1항에 있어서, 상기 고반사율막을 구성하는 물질로 크롬(Cr : chrome), 알루미늄, 텅스텐실리사이드(WSix) 및 백금(Pt), 금(Au)으로 이루어진 일군에서 선택된 어느 하나인 것을 특징으로 하는 위상반전 마스크.The method of claim 1, wherein the material constituting the high reflectance film is chromium (Cr: chrome), aluminum, tungsten silicide (WSix) and platinum (Pt), characterized in that any one selected from the group consisting of gold (Au). Phase inversion mask. 마스크 기판상에 하프톤막을 형성하는 단계; 상기 하프톤막의 소정부분을 오픈하는 제1감광막을 형성하는 단계; 상기 제1감광막을 식각 마스크로 상기 하프톤막을 식각하는 단계; 상기 마스크 기판의 전면에 고반사율막을 형성하는 단계; 상기 제1감광막을 제거하면서 제1감광막 위에 형성된 고반사율막을 동시에 1차 식각하는 단계; 상기 하프톤막 및 고반사율막 상에 제2감광막을 형성하는 단계; 상기 제2감광막을 식각마스크로 상기 고반사율막을 2차 식각하여 고반사율막 패턴을 형성하는 단계; 및 상기 제2감광막을 제거하는 단계를 포함하는 것을 특징으로 하는 위상반전 마스크의 제조방법.Forming a halftone film on the mask substrate; Forming a first photosensitive film that opens a predetermined portion of the halftone film; Etching the halftone layer using the first photoresist layer as an etching mask; Forming a high reflectivity film on the entire surface of the mask substrate; Simultaneously etching the high reflectivity film formed on the first photoresist film while removing the first photoresist film; Forming a second photosensitive film on the halftone film and the high reflectance film; Forming a high reflectivity film pattern by second etching the high reflectance film using the second photoresist film as an etching mask; And removing the second photosensitive film. 제3항에 있어서, 상기 1차 식각은 건식식각방법을 이용하여 수행하는 것을 특징으로 하는 위상반전 마스크의 제조방법.The method of claim 3, wherein the primary etching is performed by using a dry etching method. 제3항에 있어서, 상기 2차 식각은 습식식각방법 또는 건식식각방법을 이용하여 수행하는 것을 특징으로 하는 위상반전 마스크의 제조방법.The method of claim 3, wherein the secondary etching is performed by using a wet etching method or a dry etching method. 제3항에 있어서, 상기 고반사율막을 구성하는 물질로 크롬(Cr : chrome), 알루미늄, 텅스텐실리사이드(WSix) 및 백금(Pt), 금(Au)으로 이루어진 일군에서 선택된 어느 하나를 이용하는 것을 특징으로 하는 위상반전 마스크의 제조방법.The method of claim 3, wherein any one selected from the group consisting of chromium (Cr), aluminum, tungsten silicide (WSix), platinum (Pt), and gold (Au) is used as a material constituting the high reflectance film. The method of manufacturing a phase shift mask. 제6항에 있어서, 상기 고반사율막은 스퍼터(sputtering)방법, 화학기상증착법(CVD법) 및 증착법(evaporation법)중에서 선택된 어느 하나를 이용하여 형성하는 것을 특징으로 하는 위상반전 마스크의 제조방법.The method of manufacturing a phase shift mask according to claim 6, wherein the high reflectance film is formed using any one selected from a sputtering method, a chemical vapor deposition method (CVD method), and an evaporation method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950014334A 1995-05-31 1995-05-31 Phase shift mask and its manufacturing method KR0165402B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950014334A KR0165402B1 (en) 1995-05-31 1995-05-31 Phase shift mask and its manufacturing method

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Application Number Priority Date Filing Date Title
KR1019950014334A KR0165402B1 (en) 1995-05-31 1995-05-31 Phase shift mask and its manufacturing method

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KR960042203A true KR960042203A (en) 1996-12-21
KR0165402B1 KR0165402B1 (en) 1999-03-20

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