KR910010625A - Manufacturing Method of Semiconductor Device - Google Patents
Manufacturing Method of Semiconductor Device Download PDFInfo
- Publication number
- KR910010625A KR910010625A KR1019890016957A KR890016957A KR910010625A KR 910010625 A KR910010625 A KR 910010625A KR 1019890016957 A KR1019890016957 A KR 1019890016957A KR 890016957 A KR890016957 A KR 890016957A KR 910010625 A KR910010625 A KR 910010625A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- contact hole
- chamber
- manufacturing
- tungsten film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명의 선택적 화학 기상증착법에 의 해 형성된 반도체 장치의 단면도3 is a cross-sectional view of a semiconductor device formed by the selective chemical vapor deposition method of the present invention.
제 4도는 본 발명의 선택적 화학 기상 증착법에 의해 형성된 텅스텐막의 누설전류 특성도이다4 is a leakage current characteristic diagram of a tungsten film formed by the selective chemical vapor deposition method of the present invention.
Claims (4)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890016957A KR930000309B1 (en) | 1989-11-22 | 1989-11-22 | Manufacturing method of semiconductor device |
JP2046027A JPH03169010A (en) | 1989-11-22 | 1990-02-28 | Manufacture of semiconductor device |
GB9013037A GB2239661A (en) | 1989-11-22 | 1990-06-12 | Semiconductor devices provided with two metallic films |
DE4018801A DE4018801A1 (en) | 1989-11-22 | 1990-06-12 | Semiconductor device prodn. - involving two-stage tungsten CVD in contact hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890016957A KR930000309B1 (en) | 1989-11-22 | 1989-11-22 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910010625A true KR910010625A (en) | 1991-06-29 |
KR930000309B1 KR930000309B1 (en) | 1993-01-15 |
Family
ID=19291917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890016957A KR930000309B1 (en) | 1989-11-22 | 1989-11-22 | Manufacturing method of semiconductor device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH03169010A (en) |
KR (1) | KR930000309B1 (en) |
DE (1) | DE4018801A1 (en) |
GB (1) | GB2239661A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9219281D0 (en) * | 1992-09-11 | 1992-10-28 | Inmos Ltd | Manufacture of semiconductor devices |
GB9219267D0 (en) * | 1992-09-11 | 1992-10-28 | Inmos Ltd | Manufacture of semiconductor devices |
KR960006436B1 (en) * | 1992-12-17 | 1996-05-15 | 삼성전자주식회사 | Manufacturing method of contact plug of semiconductor device |
US5489552A (en) * | 1994-12-30 | 1996-02-06 | At&T Corp. | Multiple layer tungsten deposition process |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4849260A (en) * | 1986-06-30 | 1989-07-18 | Nihon Sinku Gijutsu Kabushiki Kaisha | Method for selectively depositing metal on a substrate |
JPS63149378A (en) * | 1986-12-12 | 1988-06-22 | Fujitsu Ltd | Vapor growth method |
JPS63153273A (en) * | 1986-12-16 | 1988-06-25 | Matsushita Electric Ind Co Ltd | Method for selective deposition of thin metallic film |
DE3818509A1 (en) * | 1987-06-01 | 1988-12-22 | Gen Electric | METHOD AND DEVICE FOR PRODUCING A LOW-RESISTANT CONTACT WITH ALUMINUM AND ITS ALLOYS THROUGH SELECTIVE DEPOSITION OF TUNGSTEN |
EP0305143B1 (en) * | 1987-08-24 | 1993-12-08 | Fujitsu Limited | Method of selectively forming a conductor layer |
JPH0719841B2 (en) * | 1987-10-02 | 1995-03-06 | 株式会社東芝 | Semiconductor device |
EP0319214A1 (en) * | 1987-12-04 | 1989-06-07 | AT&T Corp. | Method for making semiconductor integrated circuits using selective tungsten deposition |
-
1989
- 1989-11-22 KR KR1019890016957A patent/KR930000309B1/en not_active IP Right Cessation
-
1990
- 1990-02-28 JP JP2046027A patent/JPH03169010A/en active Pending
- 1990-06-12 DE DE4018801A patent/DE4018801A1/en not_active Ceased
- 1990-06-12 GB GB9013037A patent/GB2239661A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH03169010A (en) | 1991-07-22 |
GB9013037D0 (en) | 1990-08-01 |
GB2239661A (en) | 1991-07-10 |
DE4018801A1 (en) | 1991-05-23 |
KR930000309B1 (en) | 1993-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090102 Year of fee payment: 17 |
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EXPY | Expiration of term |