KR960025760A - Charge pump circuit - Google Patents
Charge pump circuit Download PDFInfo
- Publication number
- KR960025760A KR960025760A KR1019940038582A KR19940038582A KR960025760A KR 960025760 A KR960025760 A KR 960025760A KR 1019940038582 A KR1019940038582 A KR 1019940038582A KR 19940038582 A KR19940038582 A KR 19940038582A KR 960025760 A KR960025760 A KR 960025760A
- Authority
- KR
- South Korea
- Prior art keywords
- charge pump
- pump circuit
- clock signal
- high voltage
- supplied
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Abstract
본 발명은 챠지 펌프회로에 관한 것으로, 클럭신호 발생기로부터 입력되는 입력펄스의 전압차를 증가시켜 네가티브 챠지펌프회로의 펌핑전압을 빠른 시간내에 얻을 수 있도록 하므로써 빠른 펌핑시간을 갖는 펌핑회로에 의해 소거모드시 소요되는 시간을 단축시키도록 한 챠지 펌프회로에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charge pump circuit, and increases the voltage difference of an input pulse input from a clock signal generator so that a pumping voltage of a negative charge pump circuit can be obtained within a short time by a pumping circuit having a fast pumping time. It relates to a charge pump circuit to shorten the time required.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따른 챠지 펌프회로의 블럭도, 제2도는 제1도에서의 고전압 드라이버의 상세회로도, 제3도는 제1도에서의 포지티브 챠지 펌프회로의 상세회로도, 제4도는 제1도에서의 네가티브 챠지 펌프회로의 상세 회로도.1 is a block diagram of a charge pump circuit according to the present invention, FIG. 2 is a detailed circuit diagram of a high voltage driver in FIG. 1, FIG. 3 is a detailed circuit diagram of a positive charge pump circuit in FIG. 1, and FIG. Circuit diagram of the negative charge pump circuit in FIG.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038582A KR0143035B1 (en) | 1994-12-29 | 1994-12-29 | Charge pump circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038582A KR0143035B1 (en) | 1994-12-29 | 1994-12-29 | Charge pump circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960025760A true KR960025760A (en) | 1996-07-20 |
KR0143035B1 KR0143035B1 (en) | 1998-08-17 |
Family
ID=19404806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940038582A KR0143035B1 (en) | 1994-12-29 | 1994-12-29 | Charge pump circuit |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0143035B1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100842744B1 (en) | 2006-11-20 | 2008-07-01 | 주식회사 하이닉스반도체 | Clock Control Circuit and Voltage Pumping Device thereof |
JP4925866B2 (en) * | 2007-02-28 | 2012-05-09 | オンセミコンダクター・トレーディング・リミテッド | Charge pump circuit |
-
1994
- 1994-12-29 KR KR1019940038582A patent/KR0143035B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0143035B1 (en) | 1998-08-17 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090327 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |