KR960023213A - Sputter reactor for metal thin film deposition and high temperature heat treatment - Google Patents

Sputter reactor for metal thin film deposition and high temperature heat treatment Download PDF

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Publication number
KR960023213A
KR960023213A KR1019940035164A KR19940035164A KR960023213A KR 960023213 A KR960023213 A KR 960023213A KR 1019940035164 A KR1019940035164 A KR 1019940035164A KR 19940035164 A KR19940035164 A KR 19940035164A KR 960023213 A KR960023213 A KR 960023213A
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KR
South Korea
Prior art keywords
thin film
heat treatment
heating
reactor
high temperature
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KR1019940035164A
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Korean (ko)
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KR0138869B1 (en
Inventor
김윤태
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양승택
재단법인 한국전자통신연구소
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Priority to KR1019940035164A priority Critical patent/KR0138869B1/en
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Publication of KR0138869B1 publication Critical patent/KR0138869B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

본 발명은 금속박막의 증착을 위한 스퍼터 장비에 관한 것으로, 더욱 구체적으로는 증착공정과 열처리공정을 하나의 반응로에서 수행할 수 있도록 하는 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로에 관한 것으로 가열온도 범위가 넓고 정밀한 온도제어가 가능하며, 빠른 가열속도와 냉각속도에 의해 금속박막의 증착과 증착 후의 가열에 의한 리플로우 등의 고온 열처리를 하나의 반응로 내에서 동시 또는 순차적으로 수행 가능한 구조를 가지는 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로를 제공하기 위하여 적외선 램프를 열원으로 하여 웨이퍼 가열을 적외광의 방사에 의한 직접가열로 수행하며 특히 금속박막의 증착과 증착후의 열처리를 하나의 반응로에서 순차적으로 또는 독립적으로 수행 가능한 스퍼터 장비의 반응로와 콜리메이터(collimator) 사용시의 구멍 막힘(clogging) 현상의 개선을 위한 원거리 스퍼터 공정 수행이 가능하도록 함을 특징으로 하는 것이다.The present invention relates to a sputtering equipment for the deposition of metal thin films, and more particularly to a sputter reactor capable of metal thin film deposition and high temperature heat treatment to perform the deposition process and the heat treatment process in one reactor. It has a wide range and precise temperature control, and has a structure capable of simultaneously or sequentially performing high temperature heat treatment such as metal thin film deposition and reflow by heating after deposition due to fast heating speed and cooling speed. In order to provide a sputter reactor capable of metal thin film deposition and high temperature heat treatment, an infrared lamp is used as a heat source, and wafer heating is performed by direct heating by radiation of infrared light. In particular, deposition of metal thin film and heat treatment after deposition are performed in one reactor. Reactors and collies of sputter equipment, which can be carried out either independently or independently It is characterized in that to perform a long distance sputter process for improving the clogging phenomenon when using a collimator (collimator).

Description

금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로Sputter reactor for metal thin film deposition and high temperature heat treatment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에서 제작한 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응의 단면도.1 is a cross-sectional view of a sputtering reaction capable of metal thin film deposition and high temperature heat treatment prepared in the present invention.

Claims (5)

금속박막의 증착을 위한 스퍼터 장비에 있어서, 회전모터에 의해 회전되는 마그네트가 장착된 타겟 모듈, 반응로 측벽에의 증착 방지를 위한 실드(shield) 모듈, 웨이퍼의 가열을 위한 기판 가열 모듈, 반응로의 진공유지를 위한 진공시스템, 웨이퍼 반송 시스템으로 구성된 하나의 반응로내에서 박막 증착과 리플로우공정 등의 열처리 공정을 순차적으로 또는 독립적으로 수행하도록 함을 특징으로 하는 금속박막 증착 및 고온 열처리 가능한 스터퍼 반응로.In the sputtering equipment for depositing the metal thin film, a target module equipped with a magnet rotated by a rotating motor, a shield module for preventing deposition on the side wall of the reactor, a substrate heating module for heating the wafer, and a reactor A metal thin film deposition and high temperature heat treatment process for performing a heat treatment process such as thin film deposition and reflow process sequentially or independently in a reactor consisting of a vacuum system and a wafer transfer system for maintaining a vacuum Furnace Reactor. 제1항에 있어서, 웨이퍼 가열을 위한 기판 가열 모듈은 열원으로 직접 복사가열 방식의 적외광 램프(111)와; 가열효율의 증대를 위해 반사경(110)과; 적외광 투과창을 적외광의 투과특성이 우수한 석영판(112)으로 구성됨을 특징으로 하는 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로.The substrate heating module for heating a wafer comprises: an infrared light lamp (111) of a direct radiation heating method as a heat source; A reflector 110 to increase heating efficiency; A sputter reactor for metal thin film deposition and high temperature heat treatment, wherein the infrared light transmitting window is composed of a quartz plate 112 having excellent infrared ray transmitting properties. 제1항에 있어서, 기판 가열 모듈은 가열판의 위치와 웨이퍼 홀더의 위치를 상하로 가변할 수 있게 하여 웨이퍼의 온도 균일도를 조절할 수 있고, 가열 및 냉각속도를 가변할 수 있도록 함을 특징으로 하는 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로.The metal sheet of claim 1, wherein the substrate heating module enables the position of the heating plate and the position of the wafer holder to be changed up and down to adjust temperature uniformity of the wafer and to change heating and cooling rates. Sputter reactor for thin film deposition and high temperature heat treatment. 제1항에 있어서, 타겟모듈은 타겟과 웨이퍼 사이의 간격을 가변할 수 있도록 하여 웨이퍼 홀더의 위치가변과 가열기판의 위치가변을 통해 원거리 스퍼터 공정이 가능하여 박막의 스텝 커버리지 특성을 개선시킬 수 있도록 함을 특징으로 하는 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로.The target module of claim 1, wherein the target module can vary a distance between the target and the wafer to enable a long distance sputtering process through a variable position of the wafer holder and a variable position of the heating substrate, thereby improving step coverage characteristics of the thin film. A sputter reactor for metal thin film deposition and high temperature heat treatment. 제1항에 있어서, 타겟 모듈의 석영판 클램퍼 하부에는 링 형태의 가스공급라인을 형성하고 내부에서 질소 또는 헬륨가스가 가열되어 공급되도록 하며, 타겟의 측벽면에 링 형태의 알곤 가스라인을 설치하여 알곤 가스가 타겟의 표면에 균일하게 분사되도록 하여 질소 및 헬륨가스의 잔류에 의한 영향을 무시할 수 있도록 함을 특징으로 하는 금속박막 증착 및 고온 열처리 가능한 스퍼터 반응로.The method of claim 1, wherein the lower portion of the quartz plate clamper of the target module to form a gas supply line in the form of a ring so that nitrogen or helium gas is heated and supplied therein, by installing a ring-shaped argon gas line on the side wall surface A sputter reactor capable of thin film deposition and high temperature heat treatment, wherein the argon gas is uniformly sprayed on the surface of the target to ignore the influence of nitrogen and helium gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940035164A 1994-12-19 1994-12-19 Sputter chamber for the metal film deposition and high temperature process KR0138869B1 (en)

Priority Applications (1)

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KR1019940035164A KR0138869B1 (en) 1994-12-19 1994-12-19 Sputter chamber for the metal film deposition and high temperature process

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KR1019940035164A KR0138869B1 (en) 1994-12-19 1994-12-19 Sputter chamber for the metal film deposition and high temperature process

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KR960023213A true KR960023213A (en) 1996-07-18
KR0138869B1 KR0138869B1 (en) 1998-07-15

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100375403B1 (en) * 2000-08-24 2003-03-08 (주)대진반도체 Vacuum coating apparatus incorporating coaters having general independent function
KR100375202B1 (en) * 2000-08-24 2003-03-08 (주)대진반도체 Selerium coating apparatus for coating selerium material thickly on TFT-LCD panel

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474983B1 (en) * 1997-05-26 2005-04-14 삼성전자주식회사 Sputter with collimator for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100375403B1 (en) * 2000-08-24 2003-03-08 (주)대진반도체 Vacuum coating apparatus incorporating coaters having general independent function
KR100375202B1 (en) * 2000-08-24 2003-03-08 (주)대진반도체 Selerium coating apparatus for coating selerium material thickly on TFT-LCD panel

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