KR960022851A - Composition of Polymer PTC (Constant Temperature Coefficient) - Google Patents

Composition of Polymer PTC (Constant Temperature Coefficient) Download PDF

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Publication number
KR960022851A
KR960022851A KR1019940033010A KR19940033010A KR960022851A KR 960022851 A KR960022851 A KR 960022851A KR 1019940033010 A KR1019940033010 A KR 1019940033010A KR 19940033010 A KR19940033010 A KR 19940033010A KR 960022851 A KR960022851 A KR 960022851A
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South Korea
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ptc
polymer
temperature
transition point
polymer ptc
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KR1019940033010A
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Korean (ko)
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김종만
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김종만
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Priority to KR1019940033010A priority Critical patent/KR960022851A/en
Publication of KR960022851A publication Critical patent/KR960022851A/en

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Abstract

본 발명은 정온도계수 소자가 온도 전이점을 갖는데 있어, 이들은 고분자재료 (PE, PP, EVA, EEA)와 전도성 카-본을 주원료로 하며 고분자재료의 종류 및 첨가량을 조절하여 온도 전이점을 이동시킬 수 있는 것을 특징으로 하는 고분자 PTC 조성물들이다. 이 고분자 PTC는 자체비저항이 낮고 온도전이점을 이동하므로 전자전기적 특성에 맞는 각 전자기기에 사용할 수 있다.In the present invention, the constant temperature coefficient device has a temperature transition point, and these are the main raw materials of the polymer material (PE, PP, EVA, EEA) and the conductive carbon-carbon and move the temperature transition point by adjusting the type and amount of the polymer material. Polymeric PTC compositions are characterized in that. This polymer PTC has a low self-resistance and shifts the temperature transition point, so it can be used for each electronic device suitable for the electro-electric characteristics.

종래에 사용하던 세라믹 PTC 소자는 순수한 BaTi03세락믹스 원료에 원자가가 +3, +5인 Y2O3, Nb205를 혼합, 합성하여 반도성 세라믹스 소자를 제조하는데, 온도 전이를 위하여 Ba자리에 Pb, Sr원소를 치환하므로 온도 전이점을 (60℃-250℃)이동하여 사용목적에 따라 선택하여 전자기기에 이용한다. 그러나 현재 사용중인 전자기기의 회로보호나 칼라 TV에 사용되는 자기소거용 소자 또는 모터기동용 소자등의 대부분은 온도전이점이 80℃~130℃사이인 소자들이 대부분이다. 특히, 반도성 세라믹스의 경우 소결체의 전기적 비저항이 비교적 높은 10Ω-cm 이상이고, PTC효과는 고온에서 소결된 입자와 입자 사이의 입계면에서 전자이동의 흐름이 온도에 의존하는 현상을 이용한 것이다. 그러므로 높은전압에 견디기 어려운점들이 대전력 용도에 사용하기에 곤란한 이유들이다. 그러나 상기 재료는 절연 고전압 피복재로 사용되는 폴리에틸렌과 전도성 카본을 주성분으로 사용하기 때문에 내전압이 우수하고, 고분자 고유특성인 외부환경변화에 견디는 능력이 우수한점과 비저항을 1OΩ-cm이하로 제조가 가능하며, 각종 법용성 고분자에 열을 가했을때 고분자의 연화점과 녹는점이 존재하는데 대부분 연화점은 50℃-130℃부근이고, 녹는점은 100℃~150℃사이에 있으며, 온도에 따른 부피 팽창이 특정 온도에서 급격히 변화하는 특성을 지니고 있는데 이들은 본 발명에서 PTC 현상이 나타나는 온도 전이점을 결정하는데 중요한 요소이다. 따라서 이들 각 폴리머의 기초물리적 성질을 응용하고 폴리머의 종류를 적당한 혼합, 혼련하므로서 고분자 PTC의 은도 전이점을 이동할 수 있다.The conventional ceramic PTC device is a semiconducting ceramic device manufactured by mixing and synthesizing a pure BaTi0 3 ceramic mixture with Y 2 O 3 and Nb 2 0 5 having a valence of +3 and +5. It replaces Pb and Sr element in place and moves temperature transition point (60 ℃ -250 ℃) and select it according to the purpose of use and use it in the electronic device. However, most of the current devices have a temperature transition point between 80 ° C and 130 ° C, such as circuit protection of electronic devices and self-erasing devices or motor starting devices used in color TVs. In particular, in the case of semiconducting ceramics, the electrical resistivity of the sintered compact is relatively higher than 10 Ω-cm, and the PTC effect is based on the phenomenon that the flow of electron transfer depends on the temperature at the grain boundaries between the particles and the particles sintered at a high temperature. Therefore, the points that are difficult to withstand high voltages are the reasons why they are difficult to use in high power applications. However, since the material uses polyethylene and conductive carbon, which are used as insulation high-voltage coating materials, as the main components, the breakdown voltage is excellent, and the ability to withstand changes in the external environment, which are inherent to polymers, is excellent, and the resistivity can be manufactured to less than 1OΩ-cm. When softening and melting point of polymers, the softening point and melting point of polymer exist. Most of softening point is around 50 ℃ -130 ℃, and melting point is between 100 ℃ ~ 150 ℃. It has a rapidly changing characteristic, which is an important factor in determining the temperature transition point at which the PTC phenomenon occurs in the present invention. Therefore, the silver transition point of the polymer PTC can be shifted by applying the basic physical properties of each of these polymers and by appropriately mixing and kneading the kinds of polymers.

위와 같이 고분자 PTC 소자의 기초재료 조성을 변화하면 온도전이점을 조절할 수 있고, 상온저항과 PTC효과를 극대화 할 수 있다. 이러한 고분자 PTC소자의 온도-저항특성, 전류-시간특성, 최소전류의 장기내구성 특성을 이용하여 전자 회로의 보호소자, 모터 기동용 소자, 저온 발열체, 칼라TV자기소거 소자등으로 사용된다. 또한, 고분자PTC소자는 폴리머의 기초적인 물리적성질과 전도성율 가진 무기물이 혼합되어 만들어 지는데, 세라킥 PTC에서 어려운점들을 보완하고 제조공정이 단순화되어 상업화 하는데 이점이 있다.By changing the base material composition of the polymer PTC device as described above, the temperature transition point can be adjusted, and the room temperature resistance and the PTC effect can be maximized. By using the temperature-resistance characteristics, current-time characteristics, and long-term durability characteristics of the minimum current, the polymer PTC element is used as a protection element of an electronic circuit, a motor starting element, a low temperature heating element, and a color TV self-cleaning element. In addition, the polymer PTC device is made by mixing the basic physical properties of the polymer and inorganic materials with conductivity, which has advantages in compensating for the difficulties in the ceramic PTC and simplifying the manufacturing process and commercializing it.

Description

고분자 PTC(정온도계수)의 조성물Composition of Polymer PTC (Constant Temperature Coefficient)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (4)

고분자 PTC는 결정이존재하는 폴리머와 카-본을 주성분으로 하는데 LDPE, HDPE, EEA, EVA를 각조성의 60중량부를 기준으로 1가지의 고분자나 2가지 이상을 50~100%이상 혼합한 고분자내에 전도성 카-본이 35~40중량부가 혼련되어 온도증가에 따라 정저항 특성을 지니고 온도 전이점을 60~130℃ 사이에서 조절이 가능한 고분자 PTC.Polymer PTC is composed mainly of polymers and carbon-carbons in which crystals exist, and in one polymer or 50-100% of two or more polymers based on 60 parts by weight of LDPE, HDPE, EEA, and EVA Polymer PTC with conductive carbon-35 kneading parts with kneading, which has positive resistance with increasing temperature and can control the temperature transition point between 60 ~ 130 ℃. 1항의 고분자 PTC에서 열에 대한 안정을 증진하고, 상온에서 소자의 저항을 안정시키기 위하여 열 안정제가 0~2중량부가 첨가되거나 부저항 특성을 제거와 화학 가교를 위하여 가교제가 1~2중량부가 첨가된 고분자 PTC.In the polymer PTC of claim 1, 0 to 2 parts by weight of heat stabilizer is added to improve heat stability and stability of the device at room temperature, or 1 to 2 parts by weight of crosslinking agent is added to remove negative resistance and chemical crosslinking. Polymer PTC. 2항에서 고분자 PTC에 대한 전류-시간특성을 측정하였을 때 적어도 5초 이내에 최소전류치가 7.5mA이하되는 고분자 PTC나 상온에서 소자의 비저항이 30Ω-cm 이하의 값을 지닌 소자.A polymer PTC having a minimum current value of 7.5 mA or less within at least 5 seconds when the current-time characteristic of the polymer PTC is measured in Clause 2 or a device having a specific resistance of 30 Ω-cm or less at room temperature. 1항, 2항, 3항의 고분자 PTC양면에 전도성수지를 이용하여 구리박판(35㎛ 이하)이 접착되어 상온 저항이 온도가 상승하여 최대 저항값이 104Ω이상 증가하는 고분자 PTC.A polymer PTC in which the copper sheet (35 μm or less) is adhered to both sides of the polymer PTC of Clauses 1, 2, and 3 by using a conductive resin to increase the room temperature resistance to increase the maximum resistance value by 10 4 Ω or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940033010A 1994-12-07 1994-12-07 Composition of Polymer PTC (Constant Temperature Coefficient) KR960022851A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100297701B1 (en) * 1999-08-28 2001-09-22 조봉관 Extracting method to extractive from a moxa cautery
KR100320034B1 (en) * 2000-06-03 2002-01-09 조봉관 Electric heater for a moxa cautery
KR100436578B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method For Lithium Ion Battery Protecting And A PTC Device For Lithium Ion Battery Protecting Thereof
KR100436580B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method With Ingredient Of Excellent Resistance Repair Specific Property
KR100436581B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method With Ingredient Of Uniform Specific Property
KR100436579B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method With Excellent Resistance Repair Specific Property And PTC Device Thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100297701B1 (en) * 1999-08-28 2001-09-22 조봉관 Extracting method to extractive from a moxa cautery
KR100320034B1 (en) * 2000-06-03 2002-01-09 조봉관 Electric heater for a moxa cautery
KR100436578B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method For Lithium Ion Battery Protecting And A PTC Device For Lithium Ion Battery Protecting Thereof
KR100436580B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method With Ingredient Of Excellent Resistance Repair Specific Property
KR100436581B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method With Ingredient Of Uniform Specific Property
KR100436579B1 (en) * 2001-11-10 2004-06-19 엘지전선 주식회사 PTC Device Manufacturing Method With Excellent Resistance Repair Specific Property And PTC Device Thereof

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