JPH10223406A - Ptc composition and ptc element employing it - Google Patents
Ptc composition and ptc element employing itInfo
- Publication number
- JPH10223406A JPH10223406A JP2343397A JP2343397A JPH10223406A JP H10223406 A JPH10223406 A JP H10223406A JP 2343397 A JP2343397 A JP 2343397A JP 2343397 A JP2343397 A JP 2343397A JP H10223406 A JPH10223406 A JP H10223406A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- ptc
- composition
- conductive
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は，ある特定の温度
（スイッチング温度と呼ぶ）領域に達したときに，急激
に抵抗が上昇する正温度特性，いわゆるＰＴＣ（Positi
ve Temperature Coefficient）特性を有する高分子材料
を含む導電性樹脂組成物とそれを用いた回路素子に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive temperature characteristic in which the resistance rises abruptly when a certain temperature (called a switching temperature) is reached, that is, a so-called PTC (Positi
The present invention relates to a conductive resin composition containing a polymer material having ve temperature coefficient) characteristics and a circuit element using the same.
【０００２】[0002]
【従来の技術】従来からＰＴＣ特性を有するものとし
て，Ｙ2 Ｏ3 を微量添加したＢａＴｉＯ3 等の無機導電
性組成物（セラミックＰＴＣ）やポリエチレンのような
結晶性高分子に導電性をもつカーボンブラック等の粉体
を混練した有機導電性組成物（高分子ＰＴＣ）が知られ
ている。2. Description of the Related Art Conventionally, as a material having a PTC characteristic, an inorganic conductive composition (ceramic PTC) such as BaTiO 3 to which a trace amount of Y 2 O 3 is added, or carbon having a conductivity to a crystalline polymer such as polyethylene. An organic conductive composition (polymer PTC) in which powder such as black is kneaded is known.
【０００３】とりわけ，従来の有機導電性組成物におい
ては，ポリマーマトリックスの結晶融点より低い温度に
ある間では，導電性粒子はポリマーマトリックスの非晶
質領域にのみ存在し，導電性粒子相互に接続されたネッ
トワークを通って移動する電子により低い抵抗率を示
す。一方，従来の有機導電性組成物では，温度上昇によ
りポリマーマトリックスが融解し始めると，ポリマーマ
トリックスの粘度を保ったまま非結晶相の体積が相対的
に増加し，更に結晶相の融解で非晶質にのみ存在した導
電性粒子がマトリックス全体に拡散するため，導電性粒
子間のネットワークが切断され，抵抗率が急激に上昇す
る（正温度特性）。In particular, in a conventional organic conductive composition, while at a temperature lower than the crystal melting point of the polymer matrix, the conductive particles exist only in the amorphous region of the polymer matrix and are connected to the conductive particles. Exhibiting a lower resistivity for electrons traveling through a rendered network. On the other hand, in the conventional organic conductive composition, when the polymer matrix begins to melt due to a rise in temperature, the volume of the amorphous phase relatively increases while maintaining the viscosity of the polymer matrix, and the amorphous phase further melts due to the melting of the crystalline phase. Since the conductive particles existing only in the material diffuse into the entire matrix, the network between the conductive particles is cut, and the resistivity sharply increases (positive temperature characteristic).
【０００４】[0004]
【発明が解決しようとする課題】ＰＴＣ組成物は，例え
ば，過電流保護素子等に用いられるが，この場合にセラ
ミック系のＰＴＣ組成物を用いると室温状態での抵抗値
が〜１００Ω程度と高いために数Ａ程度の比較的大きな
電流を流すことができない。The PTC composition is used, for example, for an overcurrent protection element. In this case, when a ceramic PTC composition is used, the resistance at room temperature is as high as about 100Ω. Therefore, a relatively large current of about several A cannot flow.
【０００５】また従来から知られている高分子ＰＴＣ組
成物は高分子の融点を超えると抵抗が減少していき（負
温度特性），融点以上での安定した高抵抗が得られな
い。[0005] In addition, the resistance of the conventionally known polymer PTC composition decreases when the melting point of the polymer is exceeded (negative temperature characteristic), and a stable high resistance above the melting point cannot be obtained.
【０００６】この欠点を解消するために，現在のところ
ＰＴＣ組成物を放射線照射し，架橋することで対策して
いる。しかし，放射線照射を行う場合，設備のコストが
大きく，又工程数が増える等の問題がある。At present, a measure is taken to eliminate this drawback by irradiating the PTC composition with radiation and crosslinking it. However, when performing irradiation, there are problems that the cost of equipment is large and the number of processes is increased.
【０００７】そこで，本発明の技術的課題は，放射線を
照射することなく，室温での抵抗値が低く，更にスイッ
チング温度後に高抵抗を安定的に保つＰＴＣ組成物とそ
れを用いた回路素子であるＰＴＣ素子とＰＴＣ素子を電
気回路保護に用いた電気回路保護素子とを提供すること
にある。Therefore, a technical object of the present invention is to provide a PTC composition which has a low resistance at room temperature without irradiating radiation and which stably maintains a high resistance after a switching temperature, and a circuit element using the same. An object of the present invention is to provide a certain PTC element and an electric circuit protection element using the PTC element for electric circuit protection.
【０００８】[0008]
【課題を解決するための手段】前述の課題を解決するた
めに，本発明者らは種々検討を行った結果，ポリマー成
分に導電性粉体と半導体粉体とを混練した組成物が有効
であることを見いだした。Means for Solving the Problems In order to solve the above-mentioned problems, the present inventors have conducted various studies. As a result, a composition obtained by kneading a polymer component with a conductive powder and a semiconductor powder is effective. I found something.
【０００９】即ち，本発明によれば，ポリマー成分，半
導体粉体，及び導電性粉体を主成分とし，ある温度（ス
イッチング温度）において急激に抵抗が上昇する正温度
特性を備えた導電性樹脂組成物であって，前記半導体粉
体と前記導電性粉体の総量が全体の１５〜６０ｖｏ１％
の範囲内であることを特徴とするＰＴＣ組成物が得られ
る。That is, according to the present invention, a conductive resin comprising a polymer component, a semiconductor powder, and a conductive powder as main components and having a positive temperature characteristic in which the resistance rapidly increases at a certain temperature (switching temperature). A composition, wherein the total amount of the semiconductor powder and the conductive powder is 15 to 60 vol.
Is obtained, a PTC composition characterized by being within the range is obtained.
【００１０】また，本発明によれば，前記ＰＴＣ組成物
において，前記半導体粉体は，Ｓｉ，Ｇｅ，ＳｎＯ2 ，
ＴｉＯ2 ，及びＢＣの内の少なくとも一種からなり，前
記導電性粉体は，Ｎｉ，Ａｇ，Ｃｕ，Ｔｉ，カーボンブ
ラック，黒鉛の内の少なくとも一種からなることを特徴
とするＰＴＣ組成物が得られる。Further, according to the present invention, in the PTC composition, the semiconductor powder comprises Si, Ge, SnO 2 ,
A PTC composition comprising at least one of TiO 2 and BC, and wherein the conductive powder comprises at least one of Ni, Ag, Cu, Ti, carbon black, and graphite is obtained. .
【００１１】また，本発明によれば，前記ＰＴＣ組成物
において，前記半導体粉体の量が全体のｌ０〜５５ｖｏ
ｌ％の範囲内であることを特徴とするＰＴＣ組成物が得
られる。According to the present invention, in the PTC composition, the amount of the semiconductor powder is 10 to 55 vol.
A PTC composition characterized by being in the range of 1% is obtained.
【００１２】また，本発明によれば，前記いずれかのＰ
ＴＣ組成物を用いたことを特徴とするＰＴＣ素子が得ら
れる。According to the present invention, any one of the above P
A PTC element characterized by using the TC composition is obtained.
【００１３】さらに，本発明によれば，前記ＰＴＣ素子
を電気回路保護に用いたことを特徴とする電気回路保護
素子が得られる。Further, according to the present invention, there is provided an electric circuit protection element characterized in that the PTC element is used for electric circuit protection.
【００１４】[0014]
【発明の実施の形態】以下，本発明の実施の形態につい
て図面を参照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１５】まず，導電性樹脂組成物の目標値として室
温抵抗を１０Ω・ｃｍ以下，スイッチング後の抵抗と室
温での抵抗の比（Ｒ´／Ｒ）が１０5 以上と設定した。
次に，高密度ポリエチレンに導電性粒子として，ニッケ
ル（Ｎｉ）粉体を１０〜５０ｖｏｌ％程度ロールミル上
で加熱混練した後，シート状に成形し第１の比較試料と
してのポリマー組成体を得た。ここで，導電性樹脂組成
物に用いることができる導電性粒子としては，Ｎｉの
他，Ａｇ，Ｃｕ，Ｔｉ等の金属粉体，カーボンブラッ
ク，黒鉛等の炭素系導電性粉体，また球状粒子の表面を
物理的または化学的に金属，金属酸化物，カーボン等の
一種，または二種以上を沈着被覆させたものでも良い。First, the room temperature resistance was set to 10 Ω · cm or less and the ratio of the resistance after switching to the resistance at room temperature (R ′ / R) was set to 10 5 or more as the target values of the conductive resin composition.
Next, nickel (Ni) powder as conductive particles in high-density polyethylene was heated and kneaded on a roll mill at about 10 to 50 vol%, and then formed into a sheet to obtain a polymer composition as a first comparative sample. . The conductive particles that can be used in the conductive resin composition include, in addition to Ni, metal powders such as Ag, Cu, and Ti; carbon-based conductive powders such as carbon black and graphite; and spherical particles. The surface may be physically or chemically coated with one or more of metal, metal oxide, carbon, or the like by deposition.
【００１６】図１の曲線１２は，上記第１の比較試料の
組成物の温度と抵抗率の測定結果を示している。図１の
測定はオイルバス中４短針法で行い，抵抗率測定にはデ
ィジタルマルチメータを用いた。図１の曲線１２から分
かるように，室温での抵抗率は２Ω・ｃｍ程度であり，
スイッチング温度後にｌ０9 倍程度以上に上昇している
が，その後，更に高温となると抵抗率が低下している。The curve 12 in FIG. 1 shows the measurement results of the temperature and the resistivity of the composition of the first comparative sample. The measurement in FIG. 1 was performed by an oil bath using the four-hand method, and a resistivity was measured using a digital multimeter. As can be seen from the curve 12 in FIG. 1, the resistivity at room temperature is about 2 Ω · cm,
While it increased after switching temperature above about l0 9 times, then further hot and the resistivity is lowered.
【００１７】次に，高密度ポリエチレンにフィラーとし
てシリコン（Ｓｉ）粉体を１０〜６０ｖｏ１％程度ロー
ルミル上で加熱混練した後，シート状に成形し，第２の
比較試料としてのポリマー組成体を得た。ここで，導電
性樹脂組成物に用いることができるフィラーとしては，
シリコンの他に，ＳｎＯ2 やＢＣ等の半導体粉体でも良
い。Next, a high-density polyethylene is heated and kneaded with a silicon (Si) powder as a filler by about 10 to 60 vol. 1% on a roll mill and then formed into a sheet to obtain a polymer composition as a second comparative sample. Was. Here, fillers that can be used in the conductive resin composition include:
In addition to silicon, semiconductor powder such as SnO 2 or BC may be used.
【００１８】図１の曲線１３は，第２の比較試料の組成
物の温度と抵抗率の測定結果を示している。測定法は，
前述の第１の比較試料に用いた方法と同様である。図１
の曲線１３から分かるように，第２の比較試料において
は，高温側で１０4 倍程度に上昇し，その後も抵抗率は
下がらず安定している。しかし，室温での抵抗率が１０
6 Ω・ｃｍ程度とニッケル粉体をフィラーとして用いた
場合に比較し大きくなっている。The curve 13 in FIG. 1 shows the measurement results of the temperature and the resistivity of the composition of the second comparative sample. The measurement method is
This is the same as the method used for the first comparative sample. FIG.
As can be seen from curve 13, in the second comparative sample, the resistivity increases about 10 4 times on the high temperature side, and thereafter the resistivity is stable without decreasing. However, the resistivity at room temperature is 10
It is about 6 Ω · cm, which is larger than when nickel powder is used as a filler.
【００１９】次に，高密度ポリエチレンに，ニッケル粉
体を１０〜４０ｖｏｌ％，シリコン粉体を１０〜５０ｖ
ｏ１％程度ロールミル上で加熱混練した後，シート状に
成形した本発明の試料としてのポリマー組成体を得た。
図１の曲線１１は，本発明の試料の組成物の温度と抵抗
率の測定結果を示している。測定法は前述の第１の比較
試料及び第２の比較試料に用いた方法と同様である。図
１の曲線１１から分かるように室温での抵抗率は４Ω・
ｃｍ程度であり，高温側で１０8 倍以上に上昇し，その
後も抵抗率は下がらず安定している。またフィラー量に
ついて導電性フィラー量が５ｖｏ１％以上でないと室温
抵抗の目標値である１０Ω・ｃｍ以下にならないため，
本発明の範囲から除外される。Next, 10 to 40 vol% of nickel powder and 10 to 50 vol% of silicon powder are added to high-density polyethylene.
After about 1% of the mixture was heated and kneaded on a roll mill, a polymer composition as a sample of the present invention was formed into a sheet.
Curve 11 in FIG. 1 shows the measurement results of the temperature and resistivity of the composition of the sample of the present invention. The measuring method is the same as the method used for the first comparative sample and the second comparative sample. As can be seen from the curve 11 in FIG. 1, the resistivity at room temperature is 4Ω ·
cm, and increased to 10 8 times or more on the high-temperature side, and thereafter the resistivity is stable without decreasing. If the amount of the conductive filler is not more than 5 vol 1%, the amount of the filler does not become less than the target value of the room temperature resistance of 10 Ω · cm.
It is excluded from the scope of the present invention.
【００２０】さらに半導体成分が全体のｌ０ｖｏ１％以
上ない場合，高温での抵抗の安定性が得られなくなるの
で本発明の範囲から除外される。Further, when the semiconductor component is not more than 10% of the whole, the stability of the resistance at a high temperature cannot be obtained, which is excluded from the scope of the present invention.
【００２１】また，フィラー総量が６０ｖｏ１％を超え
るとポリマーとフィラーとの混ざりが悪くなり，作業性
が著しく悪化する。このため本発明の範囲にあるフィラ
ー総量は，全体の１５ｖｏｌ％以上６０ｖｏ１％以下と
設定される。On the other hand, if the total amount of the fillers exceeds 60 vol. 1%, the mixing of the polymer and the filler becomes poor, and the workability is remarkably deteriorated. For this reason, the total amount of filler within the range of the present invention is set to 15 vol% or more and 60 vol1% or less of the whole.
【００２２】また，以上より本発明の範囲にある半導体
成分は，全体の１０ｖｏ１% 以上，５５ｖｏｌ％以下と
設定される。Further, the semiconductor component within the scope of the present invention is set to be 10 vol. 1% or more and 55 vol.
【００２３】次に，図２の曲線２２は，一般的なＰＴＣ
組成物であるポリエチレンにカーボン系フィラーを混練
した第３の比較試料としての組成物のＰＴＣ特性を示
す。また，本発明の実施の形態による組成物のＰＴＣ特
性を図２の曲線１１（図１の曲線１１と同じ）に示す。
ただし，両方の試料ともに，放射線照射は行っていな
い。図２の曲線１１に示すように，室温での抵抗は，本
発明の試料においては，曲線２２に示される第３の比較
試料の組成物と同等でかつ高温での抵抗安定性が増して
いる。Next, a curve 22 in FIG.
9 shows PTC characteristics of a composition as a third comparative sample in which a carbon filler is kneaded with polyethylene as a composition. In addition, the PTC characteristics of the composition according to the embodiment of the present invention are shown in curve 11 in FIG. 2 (same as curve 11 in FIG. 1).
However, neither sample was irradiated. As shown by curve 11 in FIG. 2, the resistance at room temperature is equal to that of the composition of the third comparative sample shown by curve 22 in the sample of the present invention, and the resistance stability at high temperatures is increased. .
【００２４】また，図３の曲線３２にポリマー成分に導
電性粉体のみを混練した第３の比較試料として，ポリエ
チレンに黒鉛約４０ｖｏ１％を加熱混練したＰＴＣ組成
物の温度と抵抗率の測定結果を示す。図３の曲線３２に
示されるように導電性粉体のみ混練したＰＴＣ組成物
は，室温では１０Ω・ｃｍ程度以下の低抵抗率で，スイ
ッチング温度後で抵抗率が室温の１０8 〜１０9 倍程度
に上昇する。しかし組成物の温度を融点以上に上げる
と，抵抗率が急激に低下する傾向がある。The curve 32 in FIG. 3 shows the measurement results of the temperature and resistivity of a PTC composition obtained by heating and kneading about 40 vo 1% of graphite in polyethylene as a third comparative sample in which only a conductive powder is kneaded with a polymer component. Is shown. PTC composition obtained by kneading only electrically conductive powder as shown in curve 32 of FIG. 3 is a low resistivity below about 10 [Omega · cm at room temperature, 10 8 to 10 9 times the resistivity at room temperature after switching temperature Rise to the extent. However, when the temperature of the composition is raised above the melting point, the resistivity tends to decrease sharply.
【００２５】これに対し，ポリマー成分に半導体粉体を
加えた組成物でも，十分なＰＴＣ特性が得られ，かつ高
温側での抵抗が安定したものが得られることが以下の実
験から分かった。On the other hand, it has been found from the following experiments that even a composition obtained by adding a semiconductor powder to a polymer component can obtain a sufficient PTC characteristic and a stable resistance at a high temperature.
【００２６】例として，ポリエチレンに，ＳｎＯ2 約５
０ｖｏｌ％を加熱混練した第４の比較試料としてのＰＴ
Ｃ組成物の温度と抵抗率の測定結果を図３の曲線３３に
示す。図示の曲線３３に示すように，第４の比較試料に
おいては，スイッチング温度後の抵抗が１０7 倍程度ま
で上昇し，かつ高温でも抵抗は減少せず安定している。As an example, about 5 SnO 2 is added to polyethylene.
PT as a fourth comparative sample heated and kneaded at 0 vol%
The measurement result of the temperature and the resistivity of the C composition is shown by a curve 33 in FIG. As shown by the curve 33 in the figure, in the fourth comparative sample, the resistance after the switching temperature increases to about 10 7 times, and the resistance does not decrease and is stable even at a high temperature.
【００２７】しかしながら，室温の抵抗が非常に高く，
室温での抵抗が低い組成物を得られない。However, the resistance at room temperature is very high,
A composition having low resistance at room temperature cannot be obtained.
【００２８】以上，説明したように，本発明の実施の形
態においては，結晶性ポリマーに導電性粉体と半導体粉
体を併せて混練する事で室温での抵抗率が１０Ω・ｃｍ
以下と小さく，高温側でも高抵抗を安定的に維持する組
成物が得られる。As described above, in the embodiment of the present invention, the resistivity at room temperature is 10 Ω · cm by kneading a crystalline polymer with a conductive powder and a semiconductor powder together.
A composition which is small as below and can stably maintain high resistance even at a high temperature side can be obtained.
【００２９】[0029]
【発明の効果】以上，説明したように，本発明によれ
ば，ポリマー成分に導電性粉体と半導体粉体を混練する
事により，室温での抵抗値が低く，高温側でも高抵抗を
安定的に維持するＰＴＣ組成物を提供することができ
る。As described above, according to the present invention, the resistance at room temperature is low and the high resistance is stable even at high temperatures by kneading the polymer component with the conductive powder and the semiconductor powder. The present invention can provide a PTC composition that can be maintained.
【００３０】また，本発明によれば，ポリマー成分に導
電性粉体と半導体粉体を分散させてなるＰＴＣ組成物に
より，室温での抵抗値が低く，高温での抵抗の安定性が
高いため電気回路保護素子等の信頼性が要求されるもの
に使用でき，工業的利用価値は大である。According to the present invention, the resistance value at room temperature is low and the resistance stability at high temperature is high due to the PTC composition in which the conductive powder and the semiconductor powder are dispersed in the polymer component. It can be used for devices requiring reliability, such as electric circuit protection elements, and has a great industrial value.
【図１】本発明の実施の形態によるＰＴＣ組成物の温度
と電気抵抗との関係を示す図であり，比較試料も併せて
示している。FIG. 1 is a diagram showing a relationship between temperature and electric resistance of a PTC composition according to an embodiment of the present invention, and also shows a comparative sample.
【図２】本発明の実施の形態によるＰＴＣ組成物と従来
のＰＴＣ組成物の特性比較に供せられる図である。FIG. 2 is a diagram provided for comparison of characteristics between a PTC composition according to an embodiment of the present invention and a conventional PTC composition.
【図３】比較の為に，ポリマーに導電性粉体のみ又はポ
リマーに半導体粉体のみを含むＰＴＣ組成物の特性を示
す図である。FIG. 3 is a graph showing, for comparison, characteristics of a PTC composition containing only a conductive powder in a polymer or only a semiconductor powder in a polymer.
１１ 曲線（本発明試料） １２ 曲線（第１の比較試料） １３ 曲線（第２の比較試料） ２２，３２ 曲線（第３の比較試料） ３３ 曲線（第４の比較試料） 11 Curve (sample of the present invention) 12 Curve (first comparative sample) 13 Curve (second comparative sample) 22, 32 Curve (third comparative sample) 33 Curve (fourth comparative sample)
Claims (5)
体を主成分とし，ある温度において急激に抵抗が上昇す
る正温度特性を備えた導電性樹脂組成物であって，前記
半導体粉体と前記導電性粉体の総量が全体の１５〜６０
ｖｏ１％の範囲内であることを特徴とするＰＴＣ組成
物。1. A conductive resin composition comprising a polymer component, a semiconductor powder, and a conductive powder as main components and having a positive temperature characteristic in which a resistance rapidly increases at a certain temperature, wherein the semiconductor powder is And the total amount of the conductive powder is 15-60
PTC composition characterized by being within the range of vo1%.
前記半導体粉体は，Ｓｉ，Ｇｅ，ＳｎＯ2 ，ＴｉＯ2 ，
及びＢＣの内の少なくとも一種からなり，前記導電性粉
体は，Ｎｉ，Ａｇ，Ｃｕ，Ｔｉ，カーボンブラック，黒
鉛の内の少なくとも一種からなることを特徴とするＰＴ
Ｃ組成物。2. The PTC composition according to claim 1, wherein
The semiconductor powder includes Si, Ge, SnO 2 , TiO 2 ,
And BC, and the conductive powder is made of at least one of Ni, Ag, Cu, Ti, carbon black, and graphite.
C composition.
前記半導体粉体の量が全体のｌ０〜５５ｖｏｌ％の範囲
内であることを特徴とするＰＴＣ組成物。3. The PTC composition according to claim 1, wherein
A PTC composition, wherein the amount of the semiconductor powder is in the range of 10 to 55 vol% of the whole.
ＰＴＣ組成物を用いたことを特徴とするＰＴＣ素子。4. A PTC element using the PTC composition according to any one of claims 1 to 3.
護に用いたことを特徴とする電気回路保護素子。5. An electric circuit protection element, wherein the PTC element according to claim 4 is used for electric circuit protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2343397A JPH10223406A (en) | 1997-02-06 | 1997-02-06 | Ptc composition and ptc element employing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2343397A JPH10223406A (en) | 1997-02-06 | 1997-02-06 | Ptc composition and ptc element employing it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10223406A true JPH10223406A (en) | 1998-08-21 |
Family
ID=12110377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2343397A Withdrawn JPH10223406A (en) | 1997-02-06 | 1997-02-06 | Ptc composition and ptc element employing it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10223406A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110143922A1 (en) * | 2009-12-14 | 2011-06-16 | Cheng-Hsien Lee | Composition with catalyst particles |
| CN102215634A (en) * | 2010-04-02 | 2011-10-12 | 刘逸群 | Composition with catalyst particles |
| JP5073204B2 (en) * | 2003-03-07 | 2012-11-14 | タイコエレクトロニクスジャパン合同会社 | Polymer PTC element |
| US8728354B2 (en) | 2006-11-20 | 2014-05-20 | Sabic Innovative Plastics Ip B.V. | Electrically conducting compositions |
-
1997
- 1997-02-06 JP JP2343397A patent/JPH10223406A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5073204B2 (en) * | 2003-03-07 | 2012-11-14 | タイコエレクトロニクスジャパン合同会社 | Polymer PTC element |
| US8728354B2 (en) | 2006-11-20 | 2014-05-20 | Sabic Innovative Plastics Ip B.V. | Electrically conducting compositions |
| US20110143922A1 (en) * | 2009-12-14 | 2011-06-16 | Cheng-Hsien Lee | Composition with catalyst particles |
| CN102215634A (en) * | 2010-04-02 | 2011-10-12 | 刘逸群 | Composition with catalyst particles |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4545926A (en) | Conductive polymer compositions and devices | |
| JP3930905B2 (en) | Conductive polymer composition and device | |
| US5344591A (en) | Self-regulating laminar heating device and method of forming same | |
| JPH0777161B2 (en) | PTC composition, method for producing the same and PTC element | |
| KR0140203B1 (en) | Conductive polymer composition | |
| JPH10116703A (en) | Conductive polymer composition material and ptc device | |
| US11037708B2 (en) | PPTC device having resistive component | |
| JP3813611B2 (en) | Conductive polymer having PTC characteristics, method for controlling PTC characteristics of the polymer, and electronic device using the polymer | |
| KR20020037273A (en) | Conductive polymeric composite material with a resistance which is self-regulated by the temperature | |
| JPH10223406A (en) | Ptc composition and ptc element employing it | |
| KR100224945B1 (en) | Conductive polymer composition | |
| CN113826174A (en) | PPTC compositions and devices with low thermal deration and low process jump | |
| WO2021168656A1 (en) | Pptc heater and material having stable power and self-limiting behavior | |
| JPS63146402A (en) | Positive resistance-temperature coefficient resistor | |
| WO2015002197A1 (en) | Ptc element and heat-generating module | |
| JP2548202B2 (en) | Circuit protection element | |
| JP2623281B2 (en) | Polymer positive temperature characteristic composition and device | |
| JPH115915A (en) | Conductive composition | |
| JPH1131603A (en) | Ptc resistant element for protecting electric circuit and manufacture thereof | |
| JPH0359983A (en) | Heating body with positive resistance temperature coefficient | |
| KR20030062117A (en) | Method for preparing conductive polymer for overcurrent protection | |
| JPH07235370A (en) | Heater | |
| JP2002367810A (en) | Macromolecular ptc element and its manufacturing method | |
| JPH0945504A (en) | Ptc thermistor and heater structure using the same | |
| JPH10270204A (en) | Organic ptc composite material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20040406 |