KR960013529A - 질화규소계 소결체의 제조방법 - Google Patents

질화규소계 소결체의 제조방법 Download PDF

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Publication number
KR960013529A
KR960013529A KR1019950035453A KR19950035453A KR960013529A KR 960013529 A KR960013529 A KR 960013529A KR 1019950035453 A KR1019950035453 A KR 1019950035453A KR 19950035453 A KR19950035453 A KR 19950035453A KR 960013529 A KR960013529 A KR 960013529A
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South Korea
Prior art keywords
silicon nitride
sintered body
powder
based sintered
temperature range
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KR1019950035453A
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English (en)
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KR0161596B1 (ko
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마사시 요시무라
타케시 사토
아키라 야마구치
아키라 야마카와
Original Assignee
쿠라우찌 노리타카
스미도모덴기고오교오 가부시기가이샤
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/587Fine ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

질화규소계소결체의 제조방법은, 해당소결체의 가공소재를 그 내부마찰이 특이피크의 최대치를 보이는 -150℃∼+150℃의 온도범위내에서 열처리하는 방법으로 이루어진다. 본 발명에 이용되는 대표예는, 회토류원소와 알루미늄으로 이루어진 군에서 선택한 적어도 1종의 5∼15중량%(산화물 환산), Mg, Ti, Ca로 이루어진 군에서 선택한 적어도 1종의 0.5∼5중량%(산화물 환산), 및 잔부 Si3N4로 구성된 혼합분말을 얻기 위해 질화규소분말을 소결조제분말과 혼합하고, 성형하여 얻은 성형체를 질소함유분위기중에서 1500∼1700℃에서 연결하는 것에 의해 제조하는 방법이다.

Description

질화규소계 소결체의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 내부마찰을 도시한 그래프.
제2도는 본 발명에 사용한 최단 및 최장축을 평가항목으로서 설명한 도면.
제3도는 입자직경의 분포를 도시한 그래프.
제4도는 본 발명에 의한 소결체가공소재의 도면.
제5도는 질소기류중 가공소재의 열처리에 있어서 처리온도 또는 처리시간에 대한 파쇄강도의 의존도를 도시한 그래프.
제6도는 맥동하중하에서의 본 발명의 시험샘플의 피로특성을 도시한 그래프.

Claims (4)

  1. 질화규소계소결체의 가공소재를, 그 내부마찰이 특이피크의 최대치를 보이는 -150℃∼+150℃의 온도범위에서 열처리를 행하는 것을 특징으로 하는 질화규소계소결체의 제조방법.
  2. 제1항에 있어서, 상기 열처리는 상기 가공소재를 상기 온도범위에서 5∼600분간 유지하여 행하는 것을 특징으로 하는 질화규소계소결체의 제조방법.
  3. 제1항에 있어서, 상기 열처리는 비환원가스분위기에셔 행하는 것을 특징으로 하는 질화규소계소결체의 제조방법.
  4. 제1항에 있어서, 상기 질화규소계소결체가공소재는 : (1) 질화규소분말을 소결조제분말과 혼합하여 혼합분말을 얻는 공정, (2) 상기 혼합분말을 성형하여 성형체를 얻는 공정; (3) 상기 성형체를 질소함유분위기중에서 소결하여 소결체를 얻는 공정; 및 (4) 상기 소결체를 소정의 크기로 가공하여 질화규소계소결체가공소재를 얻는 공정으로 이루어진 방법에 의해 제조한 것을 특징으로 하는 질화규소계소결체의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950035453A 1994-10-19 1995-10-14 질화규소계 소결체의 제조방법 KR0161596B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25333094 1994-10-19
JP94-253330 1994-10-19

Publications (2)

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KR960013529A true KR960013529A (ko) 1996-05-22
KR0161596B1 KR0161596B1 (ko) 1998-11-16

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US (1) US5827472A (ko)
EP (1) EP0710634B1 (ko)
KR (1) KR0161596B1 (ko)
CN (1) CN1071723C (ko)
DE (1) DE69511818T2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003533010A (ja) * 1999-09-30 2003-11-05 ラム リサーチ コーポレーション 前処理を行なったガス整流板
US7368076B2 (en) * 2003-07-17 2008-05-06 Asahi Glass Company, Limited Method for producing a silicon nitride filter
CN100343198C (zh) * 2003-07-29 2007-10-17 旭硝子株式会社 氮化硅质蜂窝式过滤器及其制造方法
WO2010093237A1 (en) 2009-02-11 2010-08-19 Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno Optoelectronic device and method for fabricating such device
CN109305816B (zh) * 2017-07-27 2022-04-05 浙江多面体新材料有限公司 一种常压烧结制备高热导率氮化硅陶瓷的方法
CN109694254B (zh) * 2017-10-24 2022-10-21 浙江多面体新材料有限公司 一种采用单一烧结助剂常压烧结制备致密氮化硅陶瓷的方法
CN110395989B (zh) * 2019-07-25 2022-04-05 国网河南省电力公司方城县供电公司 一种氮化硅电路基板材料及其制备方法
CN110315439B (zh) * 2019-08-05 2020-06-16 衢州学院 一种具有毛细微孔的镜面磨削砂轮及其制备方法

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US4376742A (en) * 1981-02-23 1983-03-15 Systems Research Laboratories, Inc. Fugitive liquid phase densification of silicon nitride
JPS59116175A (ja) * 1982-12-22 1984-07-04 株式会社東芝 セラミツクス焼結部材
DE3460366D1 (en) * 1983-02-26 1986-09-04 Lucas Cookson Syalon Limited Silicon aluminium oxynitride ceramic product and method of production
JPS6081076A (ja) * 1983-10-07 1985-05-09 株式会社日立製作所 セラミツクスの機械的強度向上法
DE3443817A1 (de) * 1983-12-02 1985-06-27 Director General of Agency of Industrial Science and Technology Itaru Todoriki, Tokio/Tokyo Verfahren zur herstellung von keramik
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JPS63303867A (ja) * 1987-01-12 1988-12-12 Ngk Insulators Ltd 窒化珪素セラミックス部品の製造法
JPS63285182A (ja) * 1987-05-19 1988-11-22 Mazda Motor Corp セラミック部品の製造方法
JPH02164773A (ja) * 1988-12-16 1990-06-25 Kyocera Corp 窒化珪素質焼結体の製造方法
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JPH0723270B2 (ja) * 1992-10-30 1995-03-15 株式会社東芝 窒化ケイ素系セラミックス部品

Also Published As

Publication number Publication date
US5827472A (en) 1998-10-27
EP0710634A3 (en) 1996-10-16
DE69511818D1 (de) 1999-10-07
EP0710634B1 (en) 1999-09-01
DE69511818T2 (de) 2000-03-16
CN1131650A (zh) 1996-09-25
KR0161596B1 (ko) 1998-11-16
EP0710634A2 (en) 1996-05-08
CN1071723C (zh) 2001-09-26

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