KR960009105A - Device Separation Method of Semiconductor Devices - Google Patents
Device Separation Method of Semiconductor Devices Download PDFInfo
- Publication number
- KR960009105A KR960009105A KR1019940019268A KR19940019268A KR960009105A KR 960009105 A KR960009105 A KR 960009105A KR 1019940019268 A KR1019940019268 A KR 1019940019268A KR 19940019268 A KR19940019268 A KR 19940019268A KR 960009105 A KR960009105 A KR 960009105A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor substrate
- forming
- oxide film
- trench
- polysilicon layer
- Prior art date
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- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
본 발명은 반도체소자의 소자분리 방법에 관한 것으로서, 반도체기판상에서 패드산호막과 제1폴리실리콘층 및 질화막을 순차적으로 적층하고, 소자분리영역으로 예정된 부분상의 질화막에서 소정두께의 반도체기판까지 순차적으로 제거하여 트랜치를 형서하며, 상기 트랜치 형성시 노출되는 반도체기판 표면의 손상영역을 동일한 식각 장비내에서 비교적 낮은 에너지로 건식식각으로 제거한 후, 상기 구조의 전표면에 산화막과 제2폴리실리콘을 순차적으로 형성하며, 상기 제2폴리실리콘층을 열산화시켜 필드산화막을 형성하였으므로, 공정이 간단하고 버즈 비크 생성을 억제하여 공정수율 및 소자동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation method of a semiconductor device, in which a pad coral film, a first polysilicon layer, and a nitride film are sequentially stacked on a semiconductor substrate, and sequentially from a nitride film on a portion predetermined as a device isolation region to a semiconductor substrate having a predetermined thickness. Removes and forms a trench, and removes the damaged region of the surface of the semiconductor substrate exposed during the formation of the trench by dry etching with relatively low energy in the same etching equipment, and then sequentially forms an oxide film and a second polysilicon on the entire surface of the structure. In addition, since the second polysilicon layer is thermally oxidized to form a field oxide film, the process is simple and suppresses the generation of buzz beak, thereby improving process yield and device operation reliability.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2C도는 본 발명에 따른 반도체소자의 소자분리 공정도.2A to 2C are device isolation process diagrams of a semiconductor device according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940019268A KR100281271B1 (en) | 1994-08-04 | 1994-08-04 | Device Separation Method of Semiconductor Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940019268A KR100281271B1 (en) | 1994-08-04 | 1994-08-04 | Device Separation Method of Semiconductor Devices |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960009105A true KR960009105A (en) | 1996-03-22 |
KR100281271B1 KR100281271B1 (en) | 2001-03-02 |
Family
ID=66698114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940019268A KR100281271B1 (en) | 1994-08-04 | 1994-08-04 | Device Separation Method of Semiconductor Devices |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100281271B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100245090B1 (en) * | 1996-12-31 | 2000-03-02 | 김영환 | Method of forming an element isolation film in a semiconductor device |
KR100365890B1 (en) * | 1999-04-21 | 2003-01-24 | 닛본 덴기 가부시끼가이샤 | Method for forming a shallow trench isolation structure |
KR100731007B1 (en) * | 2001-01-15 | 2007-06-22 | 앰코 테크놀로지 코리아 주식회사 | stack-type semiconductor package |
-
1994
- 1994-08-04 KR KR1019940019268A patent/KR100281271B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100245090B1 (en) * | 1996-12-31 | 2000-03-02 | 김영환 | Method of forming an element isolation film in a semiconductor device |
KR100365890B1 (en) * | 1999-04-21 | 2003-01-24 | 닛본 덴기 가부시끼가이샤 | Method for forming a shallow trench isolation structure |
KR100731007B1 (en) * | 2001-01-15 | 2007-06-22 | 앰코 테크놀로지 코리아 주식회사 | stack-type semiconductor package |
Also Published As
Publication number | Publication date |
---|---|
KR100281271B1 (en) | 2001-03-02 |
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