KR950034648A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR950034648A
KR950034648A KR1019940011408A KR19940011408A KR950034648A KR 950034648 A KR950034648 A KR 950034648A KR 1019940011408 A KR1019940011408 A KR 1019940011408A KR 19940011408 A KR19940011408 A KR 19940011408A KR 950034648 A KR950034648 A KR 950034648A
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KR
South Korea
Prior art keywords
semiconductor device
manufacturing
extracting
condition
conditions
Prior art date
Application number
KR1019940011408A
Other languages
English (en)
Inventor
장영철
최효석
장동희
이선용
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940011408A priority Critical patent/KR950034648A/ko
Priority to JP7124778A priority patent/JP2662377B2/ja
Priority to US08/449,853 priority patent/US5740065A/en
Publication of KR950034648A publication Critical patent/KR950034648A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체장치의 제조방법에 관한 것으로, 현재 수행예정인 공정에서 이전에 수행된 로트들의 누적된 작업조건을 공정장베에서 누적평균하여 최적작업조건을 추출하는 단계와, 수행예정 공정 이전까지 수행된 하지층의 정렬상태에 대한 정보를 추출하여 보정조건을 추출하는 단계와, 상기 최적작업조건에다 상기 보정조건을 더하여 작업조건을 설정하는 단계를 구비함을 특징으로 한다.

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 감광막패턴 형성공정의 수순을 보이는 흐름도, 제2도는 본 발명이 적용되어지는 감광막패턴 형성공정에 사용되는 정렬노광장치의 구성을 개략적으로 보이는 도면, 제3도는 본 발명에 따른 정렬노광공정을 수행하기 위한 정렬노광장치의 제어수순을 보이는 제어흐름도.

Claims (3)

  1. 반도체장치의 제조방법에 있어서, 현재 수행예정인 공정에서 이전에 수행된 로트들의 누적된 작업조건을 공정장비에서 누적평균하여 최적작업조건을 추출하는 단계와, 수행예정 공정 이전까지 수행된 하지층의 정렬 상태에 대한 정보를 추출하여 보정조건을 추출하는 단계와, 상기 최적작업조건에다 상기 보정조건을 더하여 작업조건을 설정하는 단계를 구비함을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 최적작업조건의 산출방법이, 이전까지 진행된 N-1회의 공정에서의 보정된 파라메터값들 Xti±ε(i=1~n-1)의 누적평균에 의해 정해짐을 특징으로 하는 반도체장치의 제조방법.
  3. 제2항에 있어서, 상기 n-1회의 공정은 67.4%의 표준편차 이내의 결과치를 갖는 공정임을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940011408A 1994-05-25 1994-05-25 반도체장치의 제조방법 KR950034648A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019940011408A KR950034648A (ko) 1994-05-25 1994-05-25 반도체장치의 제조방법
JP7124778A JP2662377B2 (ja) 1994-05-25 1995-05-24 半導体装置製造工程における工程条件設定方法
US08/449,853 US5740065A (en) 1994-05-25 1995-05-24 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940011408A KR950034648A (ko) 1994-05-25 1994-05-25 반도체장치의 제조방법

Publications (1)

Publication Number Publication Date
KR950034648A true KR950034648A (ko) 1995-12-28

Family

ID=19383748

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940011408A KR950034648A (ko) 1994-05-25 1994-05-25 반도체장치의 제조방법

Country Status (3)

Country Link
US (1) US5740065A (ko)
JP (1) JP2662377B2 (ko)
KR (1) KR950034648A (ko)

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JP2839081B2 (ja) * 1996-03-06 1998-12-16 日本電気株式会社 半導体装置の製造方法
US6043864A (en) * 1999-03-08 2000-03-28 Taiwan Semiconductor Manufacturing Company Alignment method and apparatus using previous layer calculation data to solve critical alignment problems
JP3998372B2 (ja) 1999-06-30 2007-10-24 株式会社東芝 半導体処理工程制御システム、半導体処理工程制御方法、及び、そのための処理を記録した記録媒体
JP3949853B2 (ja) 1999-09-28 2007-07-25 株式会社東芝 露光装置の制御方法及び半導体製造装置の制御方法
US6427093B1 (en) * 1999-10-07 2002-07-30 Advanced Micro Devices, Inc. Method and apparatus for optimal wafer-by-wafer processing
KR100337600B1 (ko) * 2000-04-06 2002-05-22 윤종용 노광 시간 조절 시스템
US6482713B2 (en) 2000-08-01 2002-11-19 Texas Instruments Incorporated Shot averaging for fine pattern alignment with minimal throughput loss
JP3906035B2 (ja) 2001-03-29 2007-04-18 株式会社東芝 半導体製造装置の制御方法
TW533468B (en) * 2002-04-02 2003-05-21 Macronix Int Co Ltd Yield monitoring and analysis system and method
JP3856125B2 (ja) * 2002-05-10 2006-12-13 東京エレクトロン株式会社 処理方法及び処理装置
JP4235459B2 (ja) * 2003-01-22 2009-03-11 キヤノン株式会社 アライメント方法及び装置並びに露光装置
US6968253B2 (en) * 2003-05-07 2005-11-22 Kla-Tencor Technologies Corp. Computer-implemented method and carrier medium configured to generate a set of process parameters for a lithography process
US20050209818A1 (en) * 2004-03-17 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for predicting a parameter for a lithography overlay first lot
JP2006108474A (ja) * 2004-10-07 2006-04-20 Canon Inc 露光装置及びそれを用いたデバイス製造方法
JP4796574B2 (ja) * 2006-02-07 2011-10-19 東京エレクトロン株式会社 基板処理装置の制御装置および基板処理装置の制御プログラム
US7979380B2 (en) * 2008-02-22 2011-07-12 Applied Materials, Inc. Dynamically updated predictive model
US8612864B2 (en) * 2008-02-22 2013-12-17 Applied Materials, Inc. User interface with visualization of real and virtual data
US7974723B2 (en) * 2008-03-06 2011-07-05 Applied Materials, Inc. Yield prediction feedback for controlling an equipment engineering system
WO2016035842A1 (ja) * 2014-09-04 2016-03-10 株式会社ニコン 処理システムおよびデバイス製造方法

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JPS5994419A (ja) * 1982-11-19 1984-05-31 Canon Inc 分割焼付け装置におけるアライメント方法
US4780617A (en) * 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
US4843563A (en) * 1985-03-25 1989-06-27 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus
US4958160A (en) * 1987-08-31 1990-09-18 Canon Kabushiki Kaisha Projection exposure apparatus and method of correcting projection error
JP3336436B2 (ja) * 1991-04-02 2002-10-21 株式会社ニコン リソグラフィシステム、情報収集装置、露光装置、及び半導体デバイス製造方法

Also Published As

Publication number Publication date
JP2662377B2 (ja) 1997-10-08
US5740065A (en) 1998-04-14
JPH0845804A (ja) 1996-02-16

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