KR950032730A - 다이아몬드 화학 증착 장치 및 방법 - Google Patents

다이아몬드 화학 증착 장치 및 방법 Download PDF

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KR950032730A
KR950032730A KR1019950002577A KR19950002577A KR950032730A KR 950032730 A KR950032730 A KR 950032730A KR 1019950002577 A KR1019950002577 A KR 1019950002577A KR 19950002577 A KR19950002577 A KR 19950002577A KR 950032730 A KR950032730 A KR 950032730A
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substrate
filament
diamond
vapor deposition
chemical vapor
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KR1019950002577A
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리차드 안토니 토마스
풀턴 플리셔 제임스
헬무트 에틴저 로버트
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제이 엘. 채스킨
제네랄 일렉트릭 캄파니
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Publication of KR950032730A publication Critical patent/KR950032730A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

다이아몬드는 화학 증착법에 의해서 수소-탄화수소 가스의 혼합물을 고온의 필라멘트에 의해 활성화함으로써 기재상에 생성된다. 상기 기재의 에지부는 상기 필라멘트로부터 약 1mm 이하, 바람직하게는 약 0.3 내지 0.7mm의 거리에서 필라멘트를 향하고 있으며, 상기 기재는 다이아몬드가 그 위에 형성됨에 따라 필라멘트에 대해 이동하여 상기 간격을 유지한다. 다이아몬드 생성은 증가된 속도로 진행되며, 특정한 조건하에서 단결정으로 생성된다.

Description

다이아몬드 화학 증착 장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 따른 장치의 단면도, 제2도는 제1도의 2-2선을 따라 취한 단면도.

Claims (10)

  1. 다이아몬드 화학 증착 장치에 있어서: 약 2500℃까지 온도에 대하여 내성이 있는 적어도 하나의 필라멘트와, 다이아몬드 코팅을 수용할 수 있는 적어도 하나의 기재와, 상기 필라멘트를 향하는 에지부가 상기 필라멘트로부터 약 1mm까지 이격된 거리에 유지되도록 상기 기재를 보유함과 아울러 상기 기재를 상기 필라멘트에 대해 연속적으로 이동시키기 위한 수단과, 상기 필라멘트를 가열하기 위한 수단과, 가스를 상기 필라멘트 및 상기 기재와 접촉하도록 공급하기 위한 수단과, 상기 필라멘트와 기재를 대기압 미만의 압력으로 유지하기에 적합한 밀폐체를 포함하는 다이아몬드 화학 증착 장치.
  2. 제1항에 있어서, 상기 기재와 필라멘트 사이의 거리는 약 0.25 내지 1mm 범위인 다이아몬드 화학 증착 장치.
  3. 제2항에 있어서, 상기 기재를 보유하기 위한 수단은 기재 냉각 수단을 포함하는 다이아몬드 화학 증착 장치.
  4. 제1항에 있어서, 상기 기재의 평면에 수직인 적어도 두개의 필라멘트를 포함하며, 상기 기재로부터 상기 필라멘트의 반대쪽에 상기 가스 공급 수단을 구비한 다이아몬드 화학 증착 장치.
  5. 제1항에 있어서, 단일 필라멘트와, 복수의 기재를 포함하는 다이아몬트 화학 증착 장치.
  6. 제1항에 있어서, 상기 기재의 상기 에지부는 상기 필라멘트와 평행한 다이아몬드 화학 증착 장치.
  7. 제1항에 있어서, 상기 기재를 보유하기 위한 수단은 그것의 에지부가 상기 필라멘트와 수직인 위치와 평행한 위치 사이에서 상기 기재를 회전시키기에 적합한 다이아몬드 화학 증착 장치.
  8. 화학 증착법에 의해서 기재상에 다이아몬드를 용착시키기 위한 방법에 있어서, 상기 필라멘트로부터 적어도 하나의 필라멘트를 향하는 에지부가 약 1mm까지의 거리에 배치되도록 상기 기재를 위치설정시키는 단계와, 상기 필라멘트를 약 1800 내지 2500℃ 범위의 온도로 가열하는 단계와, 상기 기재를 대기압 미만의 압력에 유지시키고, 수소와 탄화수소 가스의 혼합물을 상기 필라멘트 및 상기 기재와 접촉하도록 통과시킴으로써, 상기 기재의 에지부상에 다이아몬드가 형성되게 하는 단계와, 상기 필라멘트에 대해 상기 기재를 이동시킴으로써, 상기 필라멘트와 상기 기재상에 형성된 다이아몬드 사이에 약 1mm까지의 간격이 유지되도록 하는 단계를 포함하는, 화학 증착법에 의해서 기재상에 다이아몬드를 용착시키기 위한 방법.
  9. 제8항에 있어서, 상기 기재의 에지부는 상기 기재의 두께와 대략 동일한 길이를 갖는, 화학 증착법에 의해서 기재상에 다이아몬드를 용착시키기 위한 방법.
  10. 제8항에 있어서, 다이아몬드 성장은 상기 기재가 상기 필라멘트와 수직일 때 시작되고, 단결정 다이아몬드 성장을 시작할 때 상기 기재가 상기 필라멘트와 평행한 위치로 회전되는, 화학 증착법에 의해서 기재상에 다이아몬드를 용착시키기 위한 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950002577A 1994-02-14 1995-02-13 다이아몬드 화학 증착 장치 및 방법 KR950032730A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US19495894A 1994-02-14 1994-02-14
US08/194,958 1994-02-14
US08/261,358 US5424096A (en) 1994-02-14 1994-06-13 HF-CVD method for forming diamond
US08/261,358 1994-06-13

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US (2) US5424096A (ko)
EP (1) EP0671481A1 (ko)
JP (1) JPH07277889A (ko)
KR (1) KR950032730A (ko)

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US5437728A (en) 1995-08-01
JPH07277889A (ja) 1995-10-24
US5424096A (en) 1995-06-13
EP0671481A1 (en) 1995-09-13

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