KR950010226A - Manufacturing Method Of Semiconductor Laser Diode - Google Patents

Manufacturing Method Of Semiconductor Laser Diode Download PDF

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Publication number
KR950010226A
KR950010226A KR1019930019770A KR930019770A KR950010226A KR 950010226 A KR950010226 A KR 950010226A KR 1019930019770 A KR1019930019770 A KR 1019930019770A KR 930019770 A KR930019770 A KR 930019770A KR 950010226 A KR950010226 A KR 950010226A
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KR
South Korea
Prior art keywords
layer
ridge
algaas
light output
output surface
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Application number
KR1019930019770A
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Korean (ko)
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KR100259007B1 (en
Inventor
김종렬
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019930019770A priority Critical patent/KR100259007B1/en
Publication of KR950010226A publication Critical patent/KR950010226A/en
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Publication of KR100259007B1 publication Critical patent/KR100259007B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명에 따른 반도체 레이저 다이오드의 제조 방법은 소정 GaAs 기판을 마련한 후 이를 선택적 식각하여, 광출력면에 수직인 방향으로 제1릿지 및 제2릿지를 형성하고, 이어서 GaAs 기판의 상부에 AlGaAs 전류 차단층을 면 성장시킨다. 그런 다음, AlGaAs 및 GaAs 대한 식각 선택성을 이용하여, 제2릿지에 해당되는 부위를 되녹임 식각하여, 전류 주입 채널 역할을 하는 홈을 형성하며, 그 상부에 제1클래드층, 활성층, 제2클래드층 및 캡층을 순차적으로 성장시킨다.In the method of manufacturing a semiconductor laser diode according to the present invention, a predetermined GaAs substrate is prepared and then selectively etched to form a first ridge and a second ridge in a direction perpendicular to the light output surface, and then cut off the AlGaAs current on the GaAs substrate. The layers are cotton grown. Then, by using the etching selectivity for AlGaAs and GaAs, the portion corresponding to the second ridge is melted back and etched to form a groove serving as a current injection channel, and the first cladding layer, the active layer, and the second cladding thereon. The layer and the cap layer are grown sequentially.

Description

반도체 레이저 다이오드의 제조 방법Manufacturing Method Of Semiconductor Laser Diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도 내지 제8b도는 본 발명에 따른 반도체 레이저 다이오드의 제조 방법을 설명하기 위한 도면들이다.5 to 8b are views for explaining a method of manufacturing a semiconductor laser diode according to the present invention.

Claims (4)

GaAs 기판을 선택적으로 식각하여, 광출력면에 수직인 방향으로 제1릿지 및 제2릿지를 형성하는 공정; 상기 기판의 상부에 AlGaAs 전류 차단층을 면 성장시키는 공정; 상기 제2릿지에 해당되는 부위를 되녹임 식각하여, 상기 기판 및 전류 차단층중 제2릿지에 대응되는 부위에 전류 주입 채널 역할을 하는 홈을 형성하는 공정; AlGaAs 전류 차단층의 상부에 상기 홈을 매립하는 제1클래드층, 활성층, 제2클래드층 및 캡층을 순차적으로 성장시키는 공정을 구비하는 것을 특징으로 하는 반도체 레이저 다이오드의 제조 방법.Selectively etching the GaAs substrate to form first and second ridges in a direction perpendicular to the light output surface; Surface growing an AlGaAs current blocking layer on the substrate; Re-melting and etching a portion corresponding to the second ridge to form a groove serving as a current injection channel in a portion corresponding to the second ridge of the substrate and the current blocking layer; And sequentially growing the first cladding layer, the active layer, the second cladding layer, and the cap layer filling the groove on the AlGaAs current blocking layer. 제1항에 있어서, 상기 제1릿지 및 제2릿지를 형성하기 위한 식각 공정은 제1릿지가 광출력면에 수직인 방향으로 위치하되 광출력면에 인접한 부위에서 그 폭이 좁아지도록 형성하고, 제2릿지가 제1릿지의 상부에 광출력면에 수직인 방향으로 위치하도록 형성하는 것을 특징으로 하는 반도체 레이저 다이오드의 제조 방법.The method of claim 1, wherein the etching process for forming the first ridge and the second ridge is formed so that the first ridge is located in a direction perpendicular to the light output surface, the width is narrowed at the portion adjacent to the light output surface, The second ridge is formed on the upper portion of the first ridge so as to be located in a direction perpendicular to the light output surface. 제1항에 있어서, 상기 전류 차단층을 면성장 시키는 공정은 AlxGa1-xAs (단, x≥0.2) 물질을 성장시키는 공정인 것을 특징으로 하는 반도체 레이저 다이오드의 제조 방법.The method of claim 1, wherein the surface growth of the current blocking layer is a process of growing an Al x Ga 1-x As (where x ≧ 0.2) material. 제1항에 있어서, 상기 제1클래드층, 활성층, 제2클래드층 및 캡층을 성장시키는 공정은 p형 AlGaAs 층, AlGaAs 층, n형 AlGaAs 층 및 n형 GaAS 층을 액상 결정법(liquid phase epitaxy)을 사용하여 순차적으로 성장시키는 것을 특징으로 하는 반도체 레이저 다이오드의 제조 방법.The method of claim 1, wherein the growing of the first cladding layer, the active layer, the second cladding layer, and the cap layer comprises forming a p-type AlGaAs layer, an AlGaAs layer, an n-type AlGaAs layer, and an n-type GaAS layer in a liquid phase epitaxy method. Method for manufacturing a semiconductor laser diode characterized in that the growth by using sequentially. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930019770A 1993-09-25 1993-09-25 Manufacturing method of semiconductor laser diode KR100259007B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930019770A KR100259007B1 (en) 1993-09-25 1993-09-25 Manufacturing method of semiconductor laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930019770A KR100259007B1 (en) 1993-09-25 1993-09-25 Manufacturing method of semiconductor laser diode

Publications (2)

Publication Number Publication Date
KR950010226A true KR950010226A (en) 1995-04-26
KR100259007B1 KR100259007B1 (en) 2000-06-15

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