KR940000385B1 - Reactive chamber cleaning apparatus of vacuum system - Google Patents
Reactive chamber cleaning apparatus of vacuum system Download PDFInfo
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- KR940000385B1 KR940000385B1 KR1019900021319A KR900021319A KR940000385B1 KR 940000385 B1 KR940000385 B1 KR 940000385B1 KR 1019900021319 A KR1019900021319 A KR 1019900021319A KR 900021319 A KR900021319 A KR 900021319A KR 940000385 B1 KR940000385 B1 KR 940000385B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
Description
제1도는 종래 진공장치의 구성도.1 is a block diagram of a conventional vacuum apparatus.
제2도는 본 발명이 설치된 진공장치의 구성도.2 is a block diagram of a vacuum apparatus in which the present invention is installed.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
2：반응실부 3：공정가스 공급부2: reaction chamber section 3: process gas supply section
4：진공부 5：정화가스 공급부4: vacuum part 5: purified gas supply part
6：가스배기부 7：밸브구동부6: gas exhaust part 7: valve driving part
21：반응실 41：진공배관21: reaction chamber 41: vacuum piping
51,61,77：수동밸브 53,62：책크밸브51, 61, 77: manual valve 53, 62: check valve
71,72,73：공기밸브 74,75,6：전기밸브71,72,73 ： Air valve 74,75,6 ： Electric valve
본 발명은 반도체 진공장치에 관한 것으로, 특히 반응실 내부의 오염방지와 자동정화 및 배기토록 하고자한 반도체 진공장치의 반응실 정화/배기장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor vacuum apparatus, and more particularly, to a reaction chamber purifying / exhaust apparatus of a semiconductor vacuum apparatus intended to prevent contamination, automatic purge, and exhaust of a reaction chamber.
종래의 반도체 진공장치는 제１도와 같이 반응실(2), 공정가스 공급부(3), 진공부(4)로 구성되어 있다.The conventional semiconductor vacuum apparatus is composed of the reaction chamber 2, the process gas supply unit 3, and the vacuum unit 4 as shown in FIG.
상기 반응실부(2)는 웨이퍼공정이 실행되는 곳으로, 반응실(21), 주밸브(22)로 구성된다.The reaction chamber portion 2 is a place where a wafer process is performed and includes a reaction chamber 21 and a main valve 22.
상기 반응실(21)은 웨이퍼와 공정가스와 반응하는 장소이고, 주밸브(22)는 반응실(21)과 진공부(4)를 연결 또는 차단시켜주는 밸브로써 공기 또는 전기로 구동된다.The reaction chamber 21 is a place where the wafer and the process gas react, and the main valve 22 is driven by air or electricity as a valve connecting or blocking the reaction chamber 21 and the vacuum unit 4.
상기 공정가스 공급부(3)는 공정에 필요한 가스를 반응실(21)내로 공급하여 주는 장치로, 공급밸브(31)(33) , 가스유량제어기(32), 필터(34), 가스압력조절기(The process gas supply unit 3 is a device for supplying the gas required for the process into the reaction chamber 21, the supply valve 31, 33, the gas flow controller 32, the filter 34, the gas pressure regulator (
35), 공정가스 실린더(36), 공기밸브구동부(37)로 구성된다.35), the process gas cylinder 36, and the air valve drive unit 37.
상기 공기밸브(31)는 반응실(21)과 가스유량제어기(32)를 연결 또는 차단시켜주는 밸브로써 공기로 구동되며 평상시 닫힘상태에서 공기가 공급되면 열림상태로 전환딘다. 또 다른 공기밸브(33)는 가스유량제어기(32)와 공정가스 실린더(36)를 연결 또는 차단시켜주는 밸브로써, 동작은 상기 공기밸브(31)와 동일하다.The air valve 31 is a valve that connects or blocks the reaction chamber 21 and the gas flow controller 32 and is driven by air, and is switched to an open state when air is supplied in a normally closed state. Another air valve 33 is a valve for connecting or blocking the gas flow controller 32 and the process gas cylinder 36, the operation is the same as the air valve 31.
상기 가스유량제어기(32)는 반응실(21)내로 공급되는 가스량이 일정하게 흐르도록 제어해주는 부품이다.The gas flow controller 32 is a component that controls the amount of gas supplied into the reaction chamber 21 to flow constantly.
상기 필터(34)는 공정가스 실린더(36)로부터 반응실(21)내로 공급되는 가스를 정화시켜 주는 부품이다.The filter 34 is a component for purifying the gas supplied from the process gas cylinder 36 into the reaction chamber 21.
상기 가스압력조절기(35)는 반응실(21)내로 공급되는 공정가스의 압력을 일정하게 유지해주는 부품이다.The gas pressure regulator 35 is a component that maintains a constant pressure of the process gas supplied into the reaction chamber 21.
상기 공정가스 실리더(36)는 공정에 필요한 가스가 저장되어 있는 용기이다.The process gas cylinder 36 is a container in which the gas required for the process is stored.
상기 공기밸브구동부(37)는 공기밸브(31)(33)에 공급되는 공기를 제어해주는 장치로써, 전기밸브(37a)(37b), 다기관(372), 전기밸브제어기(373), 전원공급기(37The air valve driving unit 37 is a device for controlling the air supplied to the air valve 31, 33, electric valves (37a) (37b), manifold (372), electric valve controller (373), power supply ( 37
4)로 구성된다.4) consists of.
상기 전기밸브(37a)(37b)는 공기밸브(31)(33)를 각각 개폐시키며, 전기(DC 24V공급)에 의해 구동되고, 평상시 닫힘상태에서 전기가 공급되면 열림상태로 전환되는 부품으로, 공기밸브(31)(33)에 공급되는 공기를 공급 또는 차단시켜 준다.The electric valves 37a and 37b open and close air valves 31 and 33, respectively, and are driven by electricity (DC 24V supply), and are parts that are switched to an open state when electricity is supplied in a normally closed state. It supplies or cuts off the air supplied to the air valves 31 and 33.
상기 다기관(372)은 각각의 전기밸브(371a)(371b)에 유틸리티(utility)로부터 긍급받은 공기를 분배해 준다.The manifold 372 distributes the air from the utility to each of the electric valves 371a and 371b.
상기 전기밸브 제어기(373)는 전기밸브(371a)(371b)에 공급되는 전원을 제어하여 전기밸브(371a)(371b)가 열림 또는 닫힘상태를 유지하도록 해주는 장치이다.The electric valve controller 373 is a device for controlling the power supplied to the electric valve (371a) (371b) to maintain the open or closed state of the electric valve (371a) (371b).
상기 전원공급기(374)는 전기밸브 제어기(373)와 전기밸브(371a)(371b)에 필요한 전원을 공급해 주는 장치이다.The power supply 374 is a device for supplying the power required for the electric valve controller 373 and the electric valve (371a) (371b).
그리고, 상기 진공부(4)는 반응실(21)을 진공상태로 유지시켜 주는 장치로써 진공배관(41)과 진공펌프(42)로 구성된다. 진공배관(41)은 주밸브(22)와 진공펌프(The vacuum unit 4 is a device for maintaining the reaction chamber 21 in a vacuum state and includes a vacuum pipe 41 and a vacuum pump 42. The vacuum pipe 41 has a main valve 22 and a vacuum pump (
42)를 연결해 주는 배관이다. 진공펌프(42)는 진공을 만들 수 있는 장치로써 전기모타로 구성된다.It is a pipe connecting 42). The vacuum pump 42 is composed of an electric motor as a device capable of making a vacuum.
상기와 같이 구성된 반도체 진공장치는 작업대기, 작업, 정지 상태로 동작한다.The semiconductor vacuum device configured as described above operates in a work standby, work, and stop state.
즉, 작업대기 상태는 작업은 하지 않으나 작업을 할 수 있도록 준비된 상태를 의미하며, 주밸브(22)는 열림상태를 유지하고, 진공펌프(42)의 진공작용에 의해 반응실(21)과 진공배관(41)은 진공상태를 유지하며, 공기밸브(31)(33)는 닫힘상태를 유지하고 가스공급은 중지상태에 있게 된다. 작업(진공)상태는 주밸브(22)가 닫힘상태가 되며, 반응실(21)내로 웨이퍼가 운반된 후 다시 주밸브(22)가 열림상태가 되어 진공펌프(42)의 진공작용에 의해 반응실(21)내는 진공상태를 유지한다.That is, the working standby state means a state in which the work is not performed but is prepared to work, and the main valve 22 maintains the open state, and the reaction chamber 21 and the vacuum pipe are operated by the vacuum action of the vacuum pump 42. 41 maintains a vacuum state, the air valves 31 and 33 remain closed and the gas supply is in a stopped state. In the working (vacuum) state, the main valve 22 is closed, and after the wafer is transported into the reaction chamber 21, the main valve 22 is opened again, and the reaction chamber (vacuum) acts by the vacuum action of the vacuum pump 42. 21) The vacuum is maintained.
그뒤 각각의 전기밸브(371a)(371b)에 전원이 공급되어 전기밸브(371a)(371b)가 여림상태로 되면 다기관(372)을 통해 공급되는 공기가 공기밸브(31)(33)에 각각 공급되어 공기밸브(31)(33)가 열림상태로 된다.Then, when electric power is supplied to each of the electric valves 371a and 371b so that the electric valves 371a and 371b are open, air supplied through the manifold 372 is supplied to the air valves 31 and 33, respectively. The air valves 31 and 33 are then opened.
상기 동작후 공정가스가 실린더로부터 반응실(21)내로 공급되어 웨이퍼와 가스가 반응하여 공정이 진행되며, 이때 가스유량제어기(32)는 일정량의 가스가 공급되도록 가스량을 제어해 주고, 반응된 가스들은 진공배관(41)과 진공펌프(42)를 경유하여 배기배관(43)으로 배출된다. 공정이 완료되면 가스공급이 중단되고 주밸브(After the operation, the process gas is supplied from the cylinder into the reaction chamber 21, and the wafer and the gas react with each other. The gas flow controller 32 controls the amount of gas so that a predetermined amount of gas is supplied, and the reacted gas. They are discharged to the exhaust pipe 43 via the vacuum pipe 41 and the vacuum pump 42. When the process is completed, the gas supply is stopped and the main valve (
22)가 닫힘상태로 되며, 반응실(21)내의 웨이퍼는 반응실(21) 밖으로 운반되고, 작업완료후 다시 작업대기 상태로 전환된다.22) is in the closed state, the wafer in the reaction chamber 21 is transported out of the reaction chamber 21, and after the work is completed, the wafer is returned to the working standby state.
그리고, 정지상태는 작업대기 또는 작업상태에서 주전원 공급이 차단되면서 진공장치가 정지되는 상태를 의미하며, 이때 주밸브(22)와 공기밸브(31), (33)는 닫힘상태가 되면, 진공펌프(42)는 동작을 멈춘다.And, the stopped state means a state in which the vacuum device is stopped while the main power supply is cut off in the working standby or working state, and in this case, the main valve 22 and the air valves 31 and 33 are closed, and the vacuum pump ( 42) stops operation.
상기 동작으로 인하여 반응실(21)과 진공배관(41)내부는 진공상태를 유지하고 있다가 서서히 대기압상태로 바뀌게 된다. 그런데, 진공장치가 정지상태일 경우 반응실(21)내부가 대기압상태로 전환되는데, 이때 대기로부터 많은 먼지등이 유입되어 그 내부가 오염이 되며, 특히 작업도중에 정지상태로 전환되었을 경우 반응실 내부에는 반응가스(공정가스)가 잔류하여 대기압상태로 바뀌면서 유입되는 공기가 반응잔류 가스가 혼합되면서 반응실 내부를 오염시키게 된다.Due to the operation, the inside of the reaction chamber 21 and the vacuum pipe 41 maintains a vacuum state and gradually changes to an atmospheric pressure state. However, when the vacuum apparatus is in a stopped state, the inside of the reaction chamber 21 is converted to an atmospheric pressure state. At this time, a lot of dust is introduced from the atmosphere, and the inside is contaminated. The reaction gas (process gas) remains in the atmospheric pressure, and the incoming air contaminates the inside of the reaction chamber while the reaction residual gas is mixed.
이로인해 반응실 세척이 요구되므로, 진공장치의 정지상태가 증가하게 되고, 또 반응잔류 가스가 반응실 밖으로 유출되는 위험이 있고, 진공펌프를 진공배관이 진공상태일때 구동시키면 진공펌프에 과부하가 걸리게 되어 고장이나 수명을 단축시키게 되는 결점이 있었던 것이다.Because of this, the reaction chamber is required to be cleaned, which increases the stationary state of the vacuum apparatus, and there is a risk of the reaction gas flowing out of the reaction chamber. If the vacuum pump is operated while the vacuum pipe is in a vacuum state, the vacuum pump may be overloaded. There was a defect that shortens the life and failure.
본 발명은 이러한 종래의 결점을 해결하고자 안출한 것으로, 반응실과 진공배관에 정화가스 공급부를 상호 연결하여 반응실과 진공배관 내부를 정화시킬 때 필요한 질소가스를 공급하고, 또 반응실과 진공배관에 가스배기부를 상호 연걸시켜 반응실과 진공배관 내부의 가스를 배기배관으로 배출시키도록 하므로써 반응실의 오염을 미연에 방지하여 반응실 세척의 불필요로 진공장치의 가동율을 높이고, 반응실 밖으로 반응잔류가스가 누출될 염려가 없어 안전효과가 있으며, 진공배관이 대기압상태일때 진공펌프를 구동시켜 진겅펄프를 보호하고자 한 것이다.The present invention has been made to solve the above-mentioned drawbacks, by supplying the nitrogen gas required to purify the reaction chamber and the vacuum pipe interior by interconnecting the purge gas supply unit to the reaction chamber and the vacuum pipe, and also the gas exhaust to the reaction chamber and the vacuum pipe The parts are connected to each other to discharge the gas inside the reaction chamber and the vacuum pipe into the exhaust pipe, thereby preventing contamination of the reaction chamber, thereby increasing the operation rate of the vacuum apparatus without the need for washing the reaction chamber, and causing the reaction residual gas to leak out of the reaction chamber. There is no worry about the safety effect, it is to protect the pulp pulp by driving the vacuum pump when the vacuum pipe is at atmospheric pressure.
이하 본 발명을 첨부도면에 의하여 상세히 설명한다. 반도체 진공장치는 제 1도와 동일하고 앞에서 설명한 바 있으므로 이에 대한 설명은 생략하며, 제 1도를 참조하여 제 2도 본 발명의 구성을 설명하기로 한다.Hereinafter, the present invention will be described in detail by the accompanying drawings. Since the semiconductor vacuum apparatus is the same as in FIG. 1 and described above, the description thereof will be omitted, and the configuration of the present invention will be described with reference to FIG. 1.
본 발명의 반도체 진공장치(1)는 반응실부(2), 공정가스 공급부(3), 진공부(The semiconductor vacuum device 1 of the present invention comprises a reaction chamber portion 2, a process gas supply portion 3, a vacuum portion (
4), 정화가스 공급부(5), 가스배기부(6), 밸브구동부(7)로 구성된다.4), the purge gas supply part 5, the gas exhaust part 6, and the valve drive part 7 are comprised.
특히 본 발명인 정화가스 공급부(5)는 수동밸브(51), 유량계(52), 첵크밸브(In particular, the present invention purification gas supply unit 5 is a manual valve 51, a flow meter 52, a check valve (
53)로 구성되며, 반응실부(2)의 반응실(21)과 진공부(4)의 진공배관(41)과 각각 상호 연통되게 연결한다. 상기 수동밸브(51)는 작업자의 손으로 조작하여 열림 또는 닫힘상태로 전환하도록 하는 밸브이다.53), the reaction chamber 21 of the reaction chamber unit 2 and the vacuum pipe 41 of the vacuum unit 4 are connected to each other in communication with each other. The manual valve 51 is a valve for operating by the operator's hand to switch to the open or closed state.
상기 유량계(52)는 반응실(21)과 진공배관(41)으로 공급되는 정화가스(질소)량을 조절하는 것으로, 수동으로 조절한다.The flow meter 52 is to adjust manually by adjusting the amount of purge gas (nitrogen) supplied to the reaction chamber 21 and the vacuum pipe (41).
상기 첵크밸브(53)는 Pl의 압력이 P2의 압력보다 1/3 PS1 이상일때 열림상태로 전환시키는 것으로 한쪽방향(Pl→P2)으로만 가스가 흐를 수 있다.The check valve 53 is switched to the open state when the pressure of Pl is 1/3 PS1 or more than the pressure of P2, so that gas can flow only in one direction (Pl → P2).
상기 Pl의 압력이란 반응실(21)과 진공배관(41)을 상호 연통연결시킨 내부압력이고, P2의 압력이란 배기배관(43)측의 내부압력을 말한다.The pressure of Pl is an internal pressure in which the reaction chamber 21 and the vacuum pipe 41 are connected to each other, and the pressure of P2 is an internal pressure of the exhaust pipe 43 side.
상기 가스배기부(6)는 반응실(21)과 진공배관(41) 내부의 가스를 배기배관(4The gas exhaust part 6 exhausts gas in the reaction chamber 21 and the vacuum pipe 41 from the exhaust pipe 4.
3)으로 배출시켜 주는 장치로, 수동밸브(61), 첵크밸브(62)로 구성된다.It is a device for discharging to 3) and consists of a manual valve 61 and a check valve 62.
상기 수동밸브(6)는 정화가스 공급부(5)의 수동밸브(51)와 동일한 작동을 한다.The manual valve 6 operates in the same manner as the manual valve 51 of the purification gas supply unit 5.
상기 첵크밸브(62)는 정화가스 공급부(5)의 첵크밸브(53)와 동일한 작동을 한다.The check valve 62 performs the same operation as the check valve 53 of the purge gas supply unit 5.
상기 밸브구동부(7)는 정화가스의 공급 및 차단시키기 위한 장치로써, 공기밸브(71)(72)(73)와 전기밸브(74)(75)(76), 수동밸브(77)로 구성된다.The valve driving unit 7 is a device for supplying and shutting off purge gas, and includes air valves 71, 72, 73, electric valves 74, 75, 76, and manual valve 77. .
상기 공기밸브(71)(72)(73)는 반응실부(2), 진공부(4), 정화가스 공급부(5), 가스배기부(6)와 각각 연결되게 설치되며, 전기밸브(74)(75)(76)에 의하여 열림 또는 개폐상태로 전환된다.The air valves 71, 72, and 73 are installed to be connected to the reaction chamber part 2, the vacuum part 4, the purification gas supply part 5, and the gas exhaust part 6, respectively, and the electric valve 74. (75) (76) is switched to the open or open state.
상기 전기밸브(74)(75)(76)는 전기밸브 제어기(373)의 전원제어에 의하여 다기관(372)의 공기를 공기밸브(71)(72)(73)로 분배하여 열림 또는 닫힘상태로 전환되게 한다.The electric valves 74, 75 and 76 distribute the air of the manifold 372 to the air valves 71, 72 and 73 by controlling the power of the electric valve controller 373 to open or close the valves. To be converted.
상기 수동밸브(77)는 진공배관(41)가 정화가스 공급부(5)를 연결시켜 정화가스의 공급 및 차단을 작업자의 손으로 조작하도록 한다.The manual valve (77) allows the vacuum pipe (41) to connect the purge gas supply unit (5) to operate the supply and shutoff of the purge gas by the operator's hand.
이와 같이 구성된 본 발명은, 진공장치(1)의 작업대기 및 작업상태시에는 정화가스 공급부(5), 가스배기부(6), 밸브구동부(7)의 수동밸브(51)(61)(77)를 각각 열림상태로 절환시키고, 밸브구동부(7)의 전기밸브(74)(75)(76)에 전원이 공급되어 열림상태가 되며, 다기관(372)을 통해 공급되는 공기가 전기밸브(74)(75)(76)을 통해 각각의 공기밸브(71)(72)(73)에 공급된다.According to the present invention configured as described above, the manual valves 51, 61, 77 of the purge gas supply unit 5, the gas exhaust unit 6, and the valve driving unit 7 in the working atmosphere and the working state of the vacuum apparatus 1. ) Is switched to the open state, the power is supplied to the electric valves 74, 75, 76 of the valve drive unit 7 to the open state, the air supplied through the manifold 372 is the electric valve (74) It is supplied to each air valve (71) (72) (73) through the (75), (76).
상기 공기밸브(71)(72)(73)는 열림상태에서 공기가 공급되는 동시에 닫힘상태로 전환되고, 닫힘상태를 계속유지한다. 따라서 진공장치(1)와 본 발명의 정화 및 배기장치는 분리된 상태로 유지된다.The air valves 71, 72 and 73 are switched to the closed state at the same time as the air is supplied in the open state, and keep the closed state. Thus, the vacuum apparatus 1 and the purge and exhaust apparatus of the present invention are kept separated.
한편, 진공장치(1)의 정지상태시, 즉 진공장치(1)가 작업대기 또는 작업상태에서 정지상태로 전환되면 반응실(21)과 진공배관(41) 내부는 종래와 같이 진공상태가 된다. 이때 전기밸브(74)(75)(76)에 공급되던 전원이 차단되면 전기밸브(74)(On the other hand, when the vacuum apparatus 1 is in a stopped state, that is, when the vacuum apparatus 1 is switched from the working standby state or the working state to the stopped state, the reaction chamber 21 and the inside of the vacuum pipe 41 become a vacuum state as in the prior art. . At this time, when the power supplied to the electric valves (74) (75) (76) is cut off, the electric valve (74) (
75)(76)는 열림상태에서 닫힘상태로 전환된다.75) 76 transitions from the open state to the closed state.
상기 전기밸브(74)(75)(76)의 닫힘상태로 인하여 전기밸브(74)(75)(76)를 통과하던 공기가 차단되므로 공기밸브(71)(72)(73)은 닫힘상태에서 열림상태로 전환된다. 공기밸브(71)(72)(73)가 열림상태로 전환됨과 동시에 첵크밸브(62)가 닫힘상태로 되며, 이때 정화가스가 수동밸브(51), 유량계(52), 첵크밸브(53)로 경유하여 반응실(2)로는 공기밸브(72)를, 진공배관(41)으로는 수동밸브(77), 공기밸브(71)를 각각 통해 공급된다. 정화가스는 첵크밸브(62)의 Pl의 압력이 P2의 압력보다 1/3 PS1이상이 될때까지 계속 공급된다.Since the air passing through the electric valves 74, 75, 76 is blocked due to the closed state of the electric valves 74, 75, 76, the air valves 71, 72, 73 are closed. It is switched to the open state. The air valves 71, 72, 73 are switched to the open state, and the check valve 62 is closed. At this time, the purge gas is transferred to the manual valve 51, the flow meter 52, and the check valve 53. The air chamber 72 is supplied to the reaction chamber 2 via the manual valve 77 and the air valve 71 to the vacuum pipe 41. Purified gas is continuously supplied until the pressure of Pl of the check valve 62 becomes 1/3 PS1 or more than the pressure of P2.
그후 압력차가 1/3 PS1 이상되면 첵크밸브(62)는 닫힘상태에서 열림상태로 변환되면서 반응실(21)과 진공배관(41) 내부의 가스가 첵크밸브(62)를 통하여 배기배관(43)으로 서서히 배출된다. 배출되는 가스는 질소가스 또는 반응잔류 가스와 질소가스의 혼합가스이다.Then, when the pressure difference is 1/3 PS1 or more, the check valve 62 is changed from the closed state to the open state, and the gas inside the reaction chamber 21 and the vacuum pipe 41 passes through the check valve 62 to the exhaust pipe 43. Is slowly discharged. The gas discharged is nitrogen gas or a mixture of reaction gas and nitrogen gas.
그후 진공장치(1)가 충분히 정화 및 배기된 후에 수동밸브(61)(77)를 손으로 조작하여 닫힘상태로 전환시켜 반응실(21) 내부만 계속 정화시키면 된다.Thereafter, after the vacuum device 1 is sufficiently purged and exhausted, the manual valves 61 and 77 may be operated by hand to be in the closed state, and only the inside of the reaction chamber 21 may be continuously purged.
따라서, 본 발명의 정화가스 공급부(5), 가스배기부(6), 밸브구동부(7)에 의하여 반응실(21) 내부의 오염을 미연에 방지하므로써 잦은 반응실 세척의 불필요한 진고장치의 가동율을 높여 생산성을 향상시킬 수가 있으며, 또 반응실 외부로 반응잔류가스를 누출시킬 수가 있으며, 또 반응실 외부로 반응잔류가스를 누출시킬 염려가 없으므로 안전사고를 미연에 방지할 수 있고, 진공배관이 대기압상태일때 진공펌프를 구동시킴으로써 진공펌프의 보호로 수명을 연장시킬 수가 있는 것이다.Therefore, the operation rate of the unnecessary apparatus for frequent washing of the reaction chamber is prevented by preventing contamination of the inside of the reaction chamber 21 by the purification gas supply part 5, the gas exhaust part 6, and the valve driving part 7 of the present invention. It can improve productivity, and it can leak reaction residual gas to outside of reaction chamber, and there is no fear of leaking reaction residual gas to outside of reaction chamber, so safety accident can be prevented in advance. By operating the vacuum pump in the state, the life of the vacuum pump can be extended.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900021319A KR940000385B1 (en) | 1990-12-21 | 1990-12-21 | Reactive chamber cleaning apparatus of vacuum system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900021319A KR940000385B1 (en) | 1990-12-21 | 1990-12-21 | Reactive chamber cleaning apparatus of vacuum system |
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| Publication Number | Publication Date |
|---|---|
| KR920013598A KR920013598A (en) | 1992-07-29 |
| KR940000385B1 true KR940000385B1 (en) | 1994-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900021319A KR940000385B1 (en) | 1990-12-21 | 1990-12-21 | Reactive chamber cleaning apparatus of vacuum system |
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| Country | Link |
|---|---|
| KR (1) | KR940000385B1 (en) |
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1990
- 1990-12-21 KR KR1019900021319A patent/KR940000385B1/en not_active IP Right Cessation
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| KR920013598A (en) | 1992-07-29 |
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