KR930020749A - Light emitting diode manufacturing method - Google Patents

Light emitting diode manufacturing method Download PDF

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Publication number
KR930020749A
KR930020749A KR1019920004636A KR920004636A KR930020749A KR 930020749 A KR930020749 A KR 930020749A KR 1019920004636 A KR1019920004636 A KR 1019920004636A KR 920004636 A KR920004636 A KR 920004636A KR 930020749 A KR930020749 A KR 930020749A
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KR
South Korea
Prior art keywords
conductive film
transparent conductive
layer
sicih
emitting diode
Prior art date
Application number
KR1019920004636A
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Korean (ko)
Inventor
박병우
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019920004636A priority Critical patent/KR930020749A/en
Publication of KR930020749A publication Critical patent/KR930020749A/en

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Abstract

본 발명은 발광다이오드 제조방법에 관한 것으로 비정질 실리콘을 사용하는 유리공법 공정으로 제작시 개별소자와 투명전도막간의 접촉면이 작아 굴절 강도가 약하고 활성영역의 한부분으로 인해 발광량이 적어 휘도가 낮아 성능이 떨어지는 문제점이 있었다.The present invention relates to a method of manufacturing a light emitting diode, and when fabricated in a glass process using amorphous silicon, the contact surface between the individual element and the transparent conductive film is small, the refractive strength is low, and the light emission amount is low due to one part of the active region, and thus the brightness is low. There was a problem falling.

본 발명은 상기와 같은 문제점을 감안하여 투명전도막을 굴곡으로 형성하고 활성층을 복층으로 제조하여 투명 전도막의 접촉면이 증대되어 발광량이 많아지며 복층으로 인한 발광량의 증대로 휘도가 증가하여 제품의 성능을 개선하는 효과가 있다.In view of the above-mentioned problems, the present invention forms a transparent conductive film by bending and manufactures an active layer in multiple layers to increase the contact surface of the transparent conductive film, thereby increasing the amount of light emitted and increasing luminance by increasing the amount of light emitted by the double layer, thereby improving product performance. It is effective.

Description

발광 다이오드 제조방법Light emitting diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도의 (a) 내지 (f)는 본 발명에 따른 발광다이오드 제조 공정도.(A) to (f) of FIG. 2 is a manufacturing process diagram of a light emitting diode according to the present invention.

Claims (2)

기판(1)위에 ITO 투명전도막(2)과 SnO2투명전도막(3)을 증착후 P형 a-SiCiH층(4), 진성 a-SiCiH층(5)및 n형 a-SiCiH층(6)을 증착후 상기 P형 a-SiCiH층(4), 진성a-SiCiH층(5) 및 7형 a-SiCiH층(6)을 반복증착하고 그 n형 a-SiCiH층 (6)에서 SnO2투명전도막(3)결계까지 에칭한 후 전극(7)을 증착하고 전원(Vcc)을 접속하여 제조하는 발광다이오드 제조방법.After depositing an ITO transparent conductive film (2) and a SnO 2 transparent conductive film (3) on the substrate (1), the P-type a-SiCiH layer (4), the intrinsic a-SiCiH layer (5), and the n-type a-SiCiH layer ( 6) after deposition, the P-type a-SiCiH layer (4), the intrinsic a-SiCiH layer (5) and the 7-type a-SiCiH layer (6) were repeatedly deposited and the SnO in the n-type a-SiCiH layer (6). 2 A method of manufacturing a light emitting diode, which is manufactured by etching the transparent conductive film (3) and then depositing an electrode (7) and connecting a power supply (Vcc). 제1항에 있어서 ITO 투명전도막(2)과 SnO2투명전도막(3)은 증착후 사진식각 공정과 이온반은 에칭법으로 굴곡을 형성하여 제조하는 발광다이오드 제조방법.The light emitting diode manufacturing method according to claim 1, wherein the ITO transparent conductive film (2) and the SnO 2 transparent conductive film (3) are formed by forming a bend by a photolithography process and an ion plate by etching after deposition. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019920004636A 1992-03-20 1992-03-20 Light emitting diode manufacturing method KR930020749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920004636A KR930020749A (en) 1992-03-20 1992-03-20 Light emitting diode manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004636A KR930020749A (en) 1992-03-20 1992-03-20 Light emitting diode manufacturing method

Publications (1)

Publication Number Publication Date
KR930020749A true KR930020749A (en) 1993-10-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920004636A KR930020749A (en) 1992-03-20 1992-03-20 Light emitting diode manufacturing method

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KR (1) KR930020749A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030052060A (en) * 2001-12-20 2003-06-26 엘지전자 주식회사 light emitting device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030052060A (en) * 2001-12-20 2003-06-26 엘지전자 주식회사 light emitting device and method for manufacturing the same

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