KR930020749A - Light emitting diode manufacturing method - Google Patents
Light emitting diode manufacturing method Download PDFInfo
- Publication number
- KR930020749A KR930020749A KR1019920004636A KR920004636A KR930020749A KR 930020749 A KR930020749 A KR 930020749A KR 1019920004636 A KR1019920004636 A KR 1019920004636A KR 920004636 A KR920004636 A KR 920004636A KR 930020749 A KR930020749 A KR 930020749A
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- KR
- South Korea
- Prior art keywords
- conductive film
- transparent conductive
- layer
- sicih
- emitting diode
- Prior art date
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Abstract
본 발명은 발광다이오드 제조방법에 관한 것으로 비정질 실리콘을 사용하는 유리공법 공정으로 제작시 개별소자와 투명전도막간의 접촉면이 작아 굴절 강도가 약하고 활성영역의 한부분으로 인해 발광량이 적어 휘도가 낮아 성능이 떨어지는 문제점이 있었다.The present invention relates to a method of manufacturing a light emitting diode, and when fabricated in a glass process using amorphous silicon, the contact surface between the individual element and the transparent conductive film is small, the refractive strength is low, and the light emission amount is low due to one part of the active region, and thus the brightness is low. There was a problem falling.
본 발명은 상기와 같은 문제점을 감안하여 투명전도막을 굴곡으로 형성하고 활성층을 복층으로 제조하여 투명 전도막의 접촉면이 증대되어 발광량이 많아지며 복층으로 인한 발광량의 증대로 휘도가 증가하여 제품의 성능을 개선하는 효과가 있다.In view of the above-mentioned problems, the present invention forms a transparent conductive film by bending and manufactures an active layer in multiple layers to increase the contact surface of the transparent conductive film, thereby increasing the amount of light emitted and increasing luminance by increasing the amount of light emitted by the double layer, thereby improving product performance. It is effective.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도의 (a) 내지 (f)는 본 발명에 따른 발광다이오드 제조 공정도.(A) to (f) of FIG. 2 is a manufacturing process diagram of a light emitting diode according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920004636A KR930020749A (en) | 1992-03-20 | 1992-03-20 | Light emitting diode manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920004636A KR930020749A (en) | 1992-03-20 | 1992-03-20 | Light emitting diode manufacturing method |
Publications (1)
Publication Number | Publication Date |
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KR930020749A true KR930020749A (en) | 1993-10-20 |
Family
ID=67257293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920004636A KR930020749A (en) | 1992-03-20 | 1992-03-20 | Light emitting diode manufacturing method |
Country Status (1)
Country | Link |
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KR (1) | KR930020749A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030052060A (en) * | 2001-12-20 | 2003-06-26 | 엘지전자 주식회사 | light emitting device and method for manufacturing the same |
-
1992
- 1992-03-20 KR KR1019920004636A patent/KR930020749A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030052060A (en) * | 2001-12-20 | 2003-06-26 | 엘지전자 주식회사 | light emitting device and method for manufacturing the same |
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