JP2670572B2 - Thin film EL element - Google Patents
Thin film EL elementInfo
- Publication number
- JP2670572B2 JP2670572B2 JP62150447A JP15044787A JP2670572B2 JP 2670572 B2 JP2670572 B2 JP 2670572B2 JP 62150447 A JP62150447 A JP 62150447A JP 15044787 A JP15044787 A JP 15044787A JP 2670572 B2 JP2670572 B2 JP 2670572B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- light
- selfoc
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000013543 active substance Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、薄膜EL素子に係り、とくに高輝度、薄膜EL
素子に関する。
（従来の技術）
薄膜EL素子は、輝度が高く、粒子性の少ない等の長所
のため、画象表示材料として注目されている。
薄膜EL素子の一般的な構成断面図を第７図に示す。１
はガラス基板、２はガラス基板上１に作成された透明導
電膜であって酸化錫等を蒸着により形成する。３は発光
層で、例えば硫化亜鉛に活性物質としてマンガン、銅等
を添加したものを前記透明導電膜２上に蒸着あるいは気
相成長に依って形成する。４はAl等の金属電極であり、
該金属電極４と前記透明導電膜２との間に第１絶縁膜５
と第２絶縁膜６とを設ける。
かかる構造の薄膜EL素子において、透明導電膜２を一
方の電極とし、金属電極４との間に適度な電界を印加す
ると、発光層３が励起されてEL発光する。この発光はガ
ラス基板１を通して外部に導出されていた。
（発明が解決使用とする問題点）
しかるに、従来の素子では、発光層３でEL発光した光
は放射状に広がるため、透明導電膜２を透過した発光
が、ガラス基板１との境界面にて、光が散乱される、あ
るいは反射されることにより外部に導出される光の輝度
が低下してしまう。従って、発光層３でEL発光した光
は、外部に導出されて時には、約10％程度の光量とな
り、表示のコントラスト等を非常に低下させる問題が生
じていた。
（問題点を解決するための手段及び作用）
本発明はかかる問題点に関して為されたものであり、
発光層と、透明導電膜と絶縁膜と金属電極とガラス基板
とからなる薄膜EL素子において、上記基板がセルフォッ
クや凸レンズ等の集光性を有する基板であることを特徴
とする薄膜EL素子にある。
さらに、上記セルフォックや凸レンズがガラス基板一
面に縦横に無数配してなる薄膜EL素子を提供することに
ある。
（実施例）
以下本発明素子を図面に基づいて詳述する。
第１図は本発明に係る薄膜EL素子の構成図を示し、第
２図、第３図は第１図のＥ−Ｅ′線矢視断面構成図を示
している。第２図は基板一方の面が凸レンズ状である場
合の具体例を示し、第３図はセルフォックである場合の
具体例を示している。
先ず、本発明薄膜EL素子の基板の一方の面が凸レンズ
形状を配してなる基板の場合について説明する。
第２図に示す如く、本発明に依る基板10aは、該基板
のEL発光が透過し、外部に導出される面上に凸レンズ状
の形状を有して成る。
該凸レンズ形状は、第１図に示す基板10面上に縦溝に
無数に配されている。また、透明電極20と接する側の基
板面は平坦面である。
薄膜EL素子の構成は、該基板上に透明導電膜20を蒸着
等により成し、第１絶縁膜21を外透明導電膜上に形成す
る。発光層22は、例えばZuSに活性物質としてMn、Cu、A
l等を添加してなるものを蒸着あるいは気相成長等によ
って、該第１絶縁膜上に成す。さらに、第２絶縁膜23を
成し、Al等の金属電極24を形成する。かかる構造の素子
において、透明導電膜20を一方の電極とし、金属電極24
との間に電界を印加すると発光層22が励起されてEL発光
する。
この発光は、第１絶縁膜21を透過し、透明導電膜20を
透過したのち、前記基板10a面上に到達する。ここで、
該EL発光が、前記基板10aを透過する概念を,1個の凸レ
ンズ部を抽出して説明してなる図である。第４図にて示
す。
前記透過したEL発光は、第４図に示す如く、放射状の
拡がりをもっている。この放射状の拡がりのため、従来
の素子では第６図に示す如く、ガラス基板１の外部との
境界面で反射されてたり、散乱されたりする。本発明の
凸レンズ形状ガラス基板では、放射状に拡がったEL発光
がガラス基板成内を透過し凸レンズ形状に達すると該基
板凸レンズ部で光の屈折現象を利用し効率よく外部に導
出できる。
また、発光層22内の各部でEL発光した光は、上記凸レ
ンズ部が基板に無数に配してなるため、該基板上のいか
なる部位に達した光でも効率良く外部に導出できる。ま
た該凸レンズ状基板はガラスでも、プラスチックでも良
い。
次に、本発明の素子の基板がセルフォックから成る場
合について説明する。
第３図に示す如くセルフォック基板10bからなる薄膜E
L素子の構成は凸レンズ状の基板の場合と同一である。
該セルフォック基板10bは例えばガラス等の同一材質
で屈折率が任意に異なるセルフォックマイクロレンズあ
るいは屈折率の違う少なくとも２種類以上の材料からな
る光ファイバー等からなり基板面上は平坦面である。
ここで、EL発光が前記基板10bを透過する概念につい
て、１個のセルフォック部を抽出して説明してなる図で
ある第５図にて説明する。
透明導電膜20を透過し、セルフォック10b内に導入さ
れてEL発光は、セルフォック内の屈折率の差から第５図
に示す如く屈折率の異なる境界部10′ｂで反射される。
従って、従来ならばガラス基板と外部との境界面での反
射により、光が導出されないという事態が発生するが、
本発明ではこうした点は解消され、EL発光を効率良く外
部に導出できる。
また、セルフォック部を基板内に無数配することで、
該基板面の各部に到達したEL発光は、いかなる部位にお
いても効率良く導出できる。
前記基板内に凸レンズ形状あるいはセルフォック部を
配する方法として、該レンズ、セルフォックの大きさ等
についてはEL素子の特性や表示パネルの大小により任意
に選択できる。
（発明の効果）
以上詳述したように本発明薄膜EL素子は、基板が集光
性を有するために、EL発光を効率良く外部に導出でき
る。
また、高輝度のEL素子が提供できることから、低電圧
でも駆動できる効果を有している。TECHNICAL FIELD The present invention relates to a thin film EL element, and particularly to a high brightness, thin film EL element.
Related to the element. (Prior Art) A thin film EL element has been attracting attention as an image display material because of its advantages such as high brightness and low graininess. FIG. 7 shows a general sectional view of the structure of a thin film EL element. 1
Is a glass substrate, 2 is a transparent conductive film formed on the glass substrate 1, and tin oxide or the like is formed by vapor deposition. A light emitting layer 3 is formed by depositing, for example, manganese or copper as an active substance on zinc sulfide on the transparent conductive film 2 by vapor deposition or vapor phase growth. 4 is a metal electrode such as Al,
A first insulating film 5 is provided between the metal electrode 4 and the transparent conductive film 2.
And the second insulating film 6 are provided. In the thin film EL element having such a structure, when the transparent conductive film 2 is used as one electrode and an appropriate electric field is applied between the transparent conductive film 2 and the metal electrode 4, the light emitting layer 3 is excited to emit EL light. This light emission was led out through the glass substrate 1. (Problems to be solved and used by the invention) However, in the conventional element, the light emitted by EL in the light emitting layer 3 spreads radially, so that the light emission transmitted through the transparent conductive film 2 is generated at the boundary surface with the glass substrate 1. The brightness of the light emitted to the outside is reduced due to the scattering or reflection of the light. Therefore, the light emitted from the EL in the light emitting layer 3 has a light amount of about 10% when it is led out to the outside, which causes a problem that the display contrast and the like are significantly reduced. (Means and Actions for Solving Problems) The present invention has been made with respect to such problems.
A thin film EL element comprising a light emitting layer, a transparent conductive film, an insulating film, a metal electrode, and a glass substrate, wherein the substrate is a substrate having a condensing property such as SELFOC or a convex lens. . Another object of the present invention is to provide a thin-film EL element in which the SELFOC or convex lenses are arranged innumerably in the vertical and horizontal directions on one surface of a glass substrate. (Example) Hereinafter, the element of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a constitutional view of a thin film EL element according to the present invention, and FIGS. 2 and 3 show sectional constitutional views taken along the line EE ′ of FIG. FIG. 2 shows a specific example in the case where one surface of the substrate has a convex lens shape, and FIG. 3 shows a specific example in the case of SELFOC. First, the case where one surface of the substrate of the thin film EL element of the present invention is a convex lens shape is described. As shown in FIG. 2, the substrate 10a according to the present invention has a convex lens shape on the surface through which the EL emission of the substrate is transmitted and is led to the outside. The convex lens shapes are arranged in innumerable vertical grooves on the surface of the substrate 10 shown in FIG. The substrate surface on the side in contact with the transparent electrode 20 is a flat surface. The thin film EL element is constructed by forming the transparent conductive film 20 on the substrate by vapor deposition or the like and forming the first insulating film 21 on the outer transparent conductive film. The light-emitting layer 22 is made of, for example, ZuS with Mn, Cu, A as an active substance.
A layer formed by adding l or the like is formed on the first insulating film by vapor deposition or vapor phase growth. Further, the second insulating film 23 is formed and the metal electrode 24 of Al or the like is formed. In the element having such a structure, the transparent conductive film 20 is used as one electrode and the metal electrode 24
When an electric field is applied between and, the light emitting layer 22 is excited to emit EL light. The emitted light passes through the first insulating film 21, the transparent conductive film 20, and then reaches the surface of the substrate 10a. here,
FIG. 3 is a diagram illustrating a concept in which the EL emission is transmitted through the substrate 10a by extracting one convex lens portion. Shown in FIG. The transmitted EL light emission has a radial spread as shown in FIG. Due to this radial spread, in the conventional element, as shown in FIG. 6, the element is reflected or scattered at the boundary surface with the outside of the glass substrate 1. In the convex lens-shaped glass substrate of the present invention, when the EL light emission that spreads radially passes through the inside of the glass substrate and reaches the convex lens shape, it can be efficiently guided to the outside by utilizing the light refraction phenomenon in the convex lens portion of the substrate. In addition, since the convex lens portions are arranged innumerably on the substrate, the light emitted by EL in each portion in the light emitting layer 22 can be efficiently led out even if the light reaches any portion on the substrate. The convex lens-shaped substrate may be glass or plastic. Next, a case where the substrate of the device of the present invention is made of SELFOC will be described. As shown in FIG. 3, a thin film E made of SELFOC substrate 10b.
The structure of the L element is the same as that of the substrate having a convex lens shape. The SELFOC substrate 10b is made of, for example, the same material such as glass and SELFOC microlenses having arbitrarily different refractive indexes, or an optical fiber made of at least two kinds of materials having different refractive indexes, and has a flat surface on the substrate surface. Here, the concept that EL light emission passes through the substrate 10b will be described with reference to FIG. 5, which is a diagram illustrating one SELFOC portion extracted. EL light that has passed through the transparent conductive film 20 and is introduced into the SELFOC 10b is reflected at a boundary portion 10'b having a different refractive index as shown in FIG. 5 due to the difference in the refractive index in the SELFOC.
Therefore, in the conventional case, there is a situation in which the light is not guided due to the reflection at the boundary surface between the glass substrate and the outside.
In the present invention, these points are eliminated, and EL emission can be efficiently led to the outside. Also, by arranging innumerable SELFOC parts in the substrate,
The EL light emission reaching each part of the substrate surface can be efficiently derived at any part. As a method of arranging the convex lens shape or the SELFOC portion in the substrate, the size of the lens or SELFOC can be arbitrarily selected depending on the characteristics of the EL element and the size of the display panel. (Effect of the Invention) As described in detail above, in the thin film EL element of the present invention, since the substrate has a light-collecting property, EL light emission can be efficiently led to the outside. In addition, since it is possible to provide a high-brightness EL element, it has the effect that it can be driven even at a low voltage.
【図面の簡単な説明】
第１図は、本発明に係る薄膜EL素子の構成図、第２、３
図は第１図のＥ−Ｅ′線矢視断面構成図、第４、５図
は、第２、３図の拡大図、第６、７図は従来例を示す図
である。
１、10、10a、10b……基板、２、20……透明導電膜
３、22……発光層、４、24……金属電極、
５、６、21、23……第１、２絶縁膜BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration diagram of a thin film EL element according to the present invention,
1 is a sectional view taken along the line EE 'of FIG. 1, FIGS. 4 and 5 are enlarged views of FIGS. 2 and 3, and FIGS. 6 and 7 are views showing a conventional example. 1, 10, 10a, 10b ... Substrate, 2, 20 ... Transparent conductive film 3, 22 ... Light emitting layer, 4, 24 ... Metal electrode, 5, 6, 21, 23 ... First and second insulating films
Claims (1)
極とガラス基板とから構成してなる薄膜EL素子におい
て、上記基板がセルフォックや凸レンズ等の集光性を有
する基板であることを特徴とする薄膜EL素子。(57) [Claims] In a thin film EL element composed of a light emitting layer, a transparent conductive film, a 1.2th insulating film, a metal electrode and a glass substrate, the substrate is a substrate having a condensing property such as SELFOC or a convex lens. Thin film EL device
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150447A JP2670572B2 (en) | 1987-06-18 | 1987-06-18 | Thin film EL element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150447A JP2670572B2 (en) | 1987-06-18 | 1987-06-18 | Thin film EL element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63314795A JPS63314795A (en) | 1988-12-22 |
| JP2670572B2 true JP2670572B2 (en) | 1997-10-29 |
Family
ID=15497134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62150447A Expired - Lifetime JP2670572B2 (en) | 1987-06-18 | 1987-06-18 | Thin film EL element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2670572B2 (en) |
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| JP5880274B2 (en) | 2012-05-21 | 2016-03-08 | コニカミノルタ株式会社 | Organic electroluminescence element, lighting device and display device |
| JP5849867B2 (en) | 2012-06-21 | 2016-02-03 | コニカミノルタ株式会社 | Organic electroluminescence element, display device and lighting device |
| JP5889730B2 (en) | 2012-06-27 | 2016-03-22 | Ｌｕｍｉｏｔｅｃ株式会社 | Organic electroluminescent device and lighting device |
| JP6146415B2 (en) | 2012-08-07 | 2017-06-14 | コニカミノルタ株式会社 | Organic electroluminescence element, lighting device and display device |
| US10347850B2 (en) | 2012-09-04 | 2019-07-09 | Konica Minolta, Inc. | Organic electroluminescent element, lighting device and display device |
| KR101751150B1 (en) | 2012-12-10 | 2017-06-26 | 코니카 미놀타 가부시키가이샤 | Organic electroluminescence element, illumination device and display device |
| KR20170127065A (en) | 2012-12-10 | 2017-11-20 | 코니카 미놀타 가부시키가이샤 | Material for organic electroluminescent element, organic electroluminescent element, illumination device, and display device |
| WO2014157610A1 (en) | 2013-03-29 | 2014-10-02 | コニカミノルタ株式会社 | Organic electroluminescent element, lighting device, display device, light-emitting thin film and composition for organic electroluminescent element, and light-emitting method |
| US10468610B2 (en) | 2013-03-29 | 2019-11-05 | Konica Minolta, Inc. | Isomer-mixture metal complex composition, organic electroluminescent element, illuminator, and display device |
| JP6350518B2 (en) | 2013-03-29 | 2018-07-04 | コニカミノルタ株式会社 | ORGANIC ELECTROLUMINESCENCE ELEMENT, LIGHTING DEVICE AND DISPLAY DEVICE HAVING THE SAME |
| JP5831654B1 (en) | 2015-02-13 | 2015-12-09 | コニカミノルタ株式会社 | Aromatic heterocycle derivative, organic electroluminescence device using the same, illumination device and display device |
| JP6788314B2 (en) | 2016-01-06 | 2020-11-25 | コニカミノルタ株式会社 | Organic electroluminescence element, manufacturing method of organic electroluminescence element, display device and lighting device |
-
1987
- 1987-06-18 JP JP62150447A patent/JP2670572B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63314795A (en) | 1988-12-22 |
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