KR930017222A - 전하 결합 소자를 사용한 선명형 고체 촬상 장치 - Google Patents

전하 결합 소자를 사용한 선명형 고체 촬상 장치 Download PDF

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Publication number
KR930017222A
KR930017222A KR1019930000682A KR930000682A KR930017222A KR 930017222 A KR930017222 A KR 930017222A KR 1019930000682 A KR1019930000682 A KR 1019930000682A KR 930000682 A KR930000682 A KR 930000682A KR 930017222 A KR930017222 A KR 930017222A
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South Korea
Prior art keywords
state imaging
imaging device
solid
blocking layer
resin
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KR1019930000682A
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English (en)
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KR970001886B1 (ko
Inventor
순이찌 나까
다까요시 이시다
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쓰지 하루오
샤프 가부시끼가이샤
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Publication of KR930017222A publication Critical patent/KR930017222A/ko
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Publication of KR970001886B1 publication Critical patent/KR970001886B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

전하 결합 소자를 사용하는 선명형 고체 촬상 장치에 있어서 고체 촬상 장치가 투명 수지로 몰드되고, 수광부를 가지는 표면과, 표면상에 설치된 차광막과, 차광막을 보호하기 위한 투명 표면 안정화막과, 투명 표면 안정화막과 투명 수지 사이의 운동 이온 차단층을 가지는 고체 촬상 장치.

Description

전하 결합 소자를 사용한 선명형 고체 촬상 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 선명형 CCD 고체 촬상 장치의 주요 부분의 단면도, 제2도는 투명 수지로 몰드된 제1도에서 나타나는 선명형 CCD 고체 촬상 장치의 개략단면도.

Claims (8)

  1. 전하 결합 소자를 사용하는 선명형 고체 촬상 장치에 있어서 고체 촬상 장치가 투명 수지로 몰드되고, 수광부를 가지는 표면과, 표면상에 설치된 차광막과, 차광막을 보호하기 위한 투명 표면 안정화막과, 투명 표면 안정화막과 투명 수지 사이의 운동 이온 차단층을 가지는 고체 촬상 장치.
  2. 제1항에 있어서, 아크릴 수지, 폴리 스틸렌 수지, 노보택 수지, 폴리 아미드 수지로 구성되는 군으로부터 선택된 물질로 형성되는 운동 이온 차단층이 있는 전하 결합 소자를 사용한 선명형 고체 촬상 장치.
  3. 제1항에 있어서, 최소한 1.5㎛의 두께를 가지는 아크릴 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
  4. 제1항에 있어서, 최소한 3.0㎛의 두께를 가지는 폴리 스틸렌 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
  5. 전하 결합 소자를 사용한 선명형 고체 촬상 장치에 있어서, 고체 촬상 장치가 입사광을 전하로 전환시키기 위한 수광부와, 수광부상에 설치되고 아크릴 수지, 폴리 스틸렌 수지, 노보택 수지, 폴리 아미드 수지로 구성되는 군으로부터 선택된 물질로 형성된 운동 이온 차단층과, 운동 이온 차단층상에 투명 수지가 있는 선명형 고체 촬상 장치.
  6. 제5항에 있어서, 최소한 1.5㎛의 두께를 가지는 아크릴 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
  7. 제5항에 있어서, 최소한 3.0㎛의 두께를 가지는 폴리 스틸렌 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
  8. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930000682A 1992-01-22 1993-01-20 전하결합 소자를 포함하는 클리어 몰드 고체촬상장치 KR970001886B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4-009335 1992-01-22
JP92-009335 1992-01-22
JP4009335A JPH05198786A (ja) 1992-01-22 1992-01-22 クリアモールドｃｃｄ固体撮像素子

Publications (2)

Publication Number Publication Date
KR930017222A true KR930017222A (ko) 1993-08-30
KR970001886B1 KR970001886B1 (ko) 1997-02-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930000682A KR970001886B1 (ko) 1992-01-22 1993-01-20 전하결합 소자를 포함하는 클리어 몰드 고체촬상장치

Country Status (5)

Country Link
US (1) US5384480A (ko)
EP (1) EP0552969B1 (ko)
JP (1) JPH05198786A (ko)
KR (1) KR970001886B1 (ko)
DE (1) DE69332296T2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19843624C1 (de) * 1998-09-23 2000-06-15 Siemens Ag Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung
US6630736B1 (en) * 2000-07-27 2003-10-07 National Semiconductor Corporation Light barrier for light sensitive semiconductor devices
US6541837B2 (en) * 2001-02-09 2003-04-01 International Business Machines Corporation Charge-coupled device wafer cover plate with compact interconnect wiring
JP4117672B2 (ja) 2002-05-01 2008-07-16 ソニー株式会社 固体撮像素子及び固体撮像装置、並びにこれらの製造方法
US6853064B2 (en) * 2003-05-12 2005-02-08 Micron Technology, Inc. Semiconductor component having stacked, encapsulated dice
WO2014064873A1 (ja) * 2012-10-22 2014-05-01 シャープ株式会社 半導体装置の製造方法
CN106449689A (zh) * 2016-11-11 2017-02-22 中国电子科技集团公司第四十四研究所 带聚酰亚胺垫层的帧转移可见光ccd

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188853A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Plastic molded type semiconductor device
JPH01259072A (ja) * 1988-04-08 1989-10-16 Daikin Ind Ltd 防湿コーティング剤
JPH02262367A (ja) * 1989-04-03 1990-10-25 Seiko Instr Inc 半導体装置
JPH03116857A (ja) * 1989-09-29 1991-05-17 Mitsui Petrochem Ind Ltd 発光または受光装置
JPH03230567A (ja) * 1990-02-05 1991-10-14 Sharp Corp 固体撮像装置
US5241198A (en) * 1990-11-26 1993-08-31 Matsushita Electronics Corporation Charge-coupled device and solid-state imaging device
JP2604905B2 (ja) * 1990-11-29 1997-04-30 宇宙開発事業団 固体撮像装置
JPH04286361A (ja) * 1991-03-15 1992-10-12 Sony Corp 固体撮像装置

Also Published As

Publication number Publication date
EP0552969A1 (en) 1993-07-28
DE69332296T2 (de) 2003-04-17
EP0552969B1 (en) 2002-09-18
JPH05198786A (ja) 1993-08-06
KR970001886B1 (ko) 1997-02-18
DE69332296D1 (de) 2002-10-24
US5384480A (en) 1995-01-24

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