KR930017222A - 전하 결합 소자를 사용한 선명형 고체 촬상 장치 - Google Patents
전하 결합 소자를 사용한 선명형 고체 촬상 장치 Download PDFInfo
- Publication number
- KR930017222A KR930017222A KR1019930000682A KR930000682A KR930017222A KR 930017222 A KR930017222 A KR 930017222A KR 1019930000682 A KR1019930000682 A KR 1019930000682A KR 930000682 A KR930000682 A KR 930000682A KR 930017222 A KR930017222 A KR 930017222A
- Authority
- KR
- South Korea
- Prior art keywords
- state imaging
- imaging device
- solid
- blocking layer
- resin
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 17
- 230000000903 blocking effect Effects 0.000 claims abstract 9
- 229920005989 resin Polymers 0.000 claims abstract 7
- 239000011347 resin Substances 0.000 claims abstract 7
- 230000008878 coupling Effects 0.000 claims abstract 3
- 238000010168 coupling process Methods 0.000 claims abstract 3
- 238000005859 coupling reaction Methods 0.000 claims abstract 3
- 239000012528 membrane Substances 0.000 claims abstract 2
- 230000006641 stabilisation Effects 0.000 claims abstract 2
- 238000011105 stabilization Methods 0.000 claims abstract 2
- 230000000087 stabilizing effect Effects 0.000 claims abstract 2
- 239000004925 Acrylic resin Substances 0.000 claims 4
- 229920000178 Acrylic resin Polymers 0.000 claims 4
- 229920005990 polystyrene resin Polymers 0.000 claims 4
- 239000000463 material Substances 0.000 claims 2
- 229920006122 polyamide resin Polymers 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
전하 결합 소자를 사용하는 선명형 고체 촬상 장치에 있어서 고체 촬상 장치가 투명 수지로 몰드되고, 수광부를 가지는 표면과, 표면상에 설치된 차광막과, 차광막을 보호하기 위한 투명 표면 안정화막과, 투명 표면 안정화막과 투명 수지 사이의 운동 이온 차단층을 가지는 고체 촬상 장치.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 선명형 CCD 고체 촬상 장치의 주요 부분의 단면도, 제2도는 투명 수지로 몰드된 제1도에서 나타나는 선명형 CCD 고체 촬상 장치의 개략단면도.
Claims (8)
- 전하 결합 소자를 사용하는 선명형 고체 촬상 장치에 있어서 고체 촬상 장치가 투명 수지로 몰드되고, 수광부를 가지는 표면과, 표면상에 설치된 차광막과, 차광막을 보호하기 위한 투명 표면 안정화막과, 투명 표면 안정화막과 투명 수지 사이의 운동 이온 차단층을 가지는 고체 촬상 장치.
- 제1항에 있어서, 아크릴 수지, 폴리 스틸렌 수지, 노보택 수지, 폴리 아미드 수지로 구성되는 군으로부터 선택된 물질로 형성되는 운동 이온 차단층이 있는 전하 결합 소자를 사용한 선명형 고체 촬상 장치.
- 제1항에 있어서, 최소한 1.5㎛의 두께를 가지는 아크릴 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
- 제1항에 있어서, 최소한 3.0㎛의 두께를 가지는 폴리 스틸렌 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
- 전하 결합 소자를 사용한 선명형 고체 촬상 장치에 있어서, 고체 촬상 장치가 입사광을 전하로 전환시키기 위한 수광부와, 수광부상에 설치되고 아크릴 수지, 폴리 스틸렌 수지, 노보택 수지, 폴리 아미드 수지로 구성되는 군으로부터 선택된 물질로 형성된 운동 이온 차단층과, 운동 이온 차단층상에 투명 수지가 있는 선명형 고체 촬상 장치.
- 제5항에 있어서, 최소한 1.5㎛의 두께를 가지는 아크릴 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
- 제5항에 있어서, 최소한 3.0㎛의 두께를 가지는 폴리 스틸렌 수지로 형성된 운동 이온 차단층을 가지는 전하 결합 소자를 사용하는 선명형 고체 촬상 장치.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4-009335 | 1992-01-22 | ||
JP92-009335 | 1992-01-22 | ||
JP4009335A JPH05198786A (ja) | 1992-01-22 | 1992-01-22 | クリアモールドccd固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930017222A true KR930017222A (ko) | 1993-08-30 |
KR970001886B1 KR970001886B1 (ko) | 1997-02-18 |
Family
ID=11717603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930000682A KR970001886B1 (ko) | 1992-01-22 | 1993-01-20 | 전하결합 소자를 포함하는 클리어 몰드 고체촬상장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5384480A (ko) |
EP (1) | EP0552969B1 (ko) |
JP (1) | JPH05198786A (ko) |
KR (1) | KR970001886B1 (ko) |
DE (1) | DE69332296T2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19843624C1 (de) * | 1998-09-23 | 2000-06-15 | Siemens Ag | Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung |
US6630736B1 (en) * | 2000-07-27 | 2003-10-07 | National Semiconductor Corporation | Light barrier for light sensitive semiconductor devices |
US6541837B2 (en) * | 2001-02-09 | 2003-04-01 | International Business Machines Corporation | Charge-coupled device wafer cover plate with compact interconnect wiring |
JP4117672B2 (ja) | 2002-05-01 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
US6853064B2 (en) * | 2003-05-12 | 2005-02-08 | Micron Technology, Inc. | Semiconductor component having stacked, encapsulated dice |
WO2014064873A1 (ja) * | 2012-10-22 | 2014-05-01 | シャープ株式会社 | 半導体装置の製造方法 |
CN106449689A (zh) * | 2016-11-11 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | 带聚酰亚胺垫层的帧转移可见光ccd |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188853A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Plastic molded type semiconductor device |
JPH01259072A (ja) * | 1988-04-08 | 1989-10-16 | Daikin Ind Ltd | 防湿コーティング剤 |
JPH02262367A (ja) * | 1989-04-03 | 1990-10-25 | Seiko Instr Inc | 半導体装置 |
JPH03116857A (ja) * | 1989-09-29 | 1991-05-17 | Mitsui Petrochem Ind Ltd | 発光または受光装置 |
JPH03230567A (ja) * | 1990-02-05 | 1991-10-14 | Sharp Corp | 固体撮像装置 |
US5241198A (en) * | 1990-11-26 | 1993-08-31 | Matsushita Electronics Corporation | Charge-coupled device and solid-state imaging device |
JP2604905B2 (ja) * | 1990-11-29 | 1997-04-30 | 宇宙開発事業団 | 固体撮像装置 |
JPH04286361A (ja) * | 1991-03-15 | 1992-10-12 | Sony Corp | 固体撮像装置 |
-
1992
- 1992-01-22 JP JP4009335A patent/JPH05198786A/ja active Pending
-
1993
- 1993-01-20 KR KR1019930000682A patent/KR970001886B1/ko not_active IP Right Cessation
- 1993-01-22 US US08/006,923 patent/US5384480A/en not_active Expired - Lifetime
- 1993-01-22 DE DE69332296T patent/DE69332296T2/de not_active Expired - Lifetime
- 1993-01-22 EP EP93300460A patent/EP0552969B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0552969A1 (en) | 1993-07-28 |
DE69332296T2 (de) | 2003-04-17 |
EP0552969B1 (en) | 2002-09-18 |
JPH05198786A (ja) | 1993-08-06 |
KR970001886B1 (ko) | 1997-02-18 |
DE69332296D1 (de) | 2002-10-24 |
US5384480A (en) | 1995-01-24 |
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