KR930016814A - Manufacturing method of liquid crystal display - Google Patents
Manufacturing method of liquid crystal display Download PDFInfo
- Publication number
- KR930016814A KR930016814A KR1019920001521A KR920001521A KR930016814A KR 930016814 A KR930016814 A KR 930016814A KR 1019920001521 A KR1019920001521 A KR 1019920001521A KR 920001521 A KR920001521 A KR 920001521A KR 930016814 A KR930016814 A KR 930016814A
- Authority
- KR
- South Korea
- Prior art keywords
- gate insulating
- insulating film
- transparent pixel
- pixel electrode
- deposited
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract 4
- 238000000151 deposition Methods 0.000 claims abstract 3
- 239000011521 glass Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000003860 storage Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
Abstract
본 발명은 박막트랜지스터를 이용한 액정디스플레이어의 제조방법에 관한 것으로, 유리기판(11)상에 형성된 게이트전극(12)위에 게이트절연막(13)을 증착시키고, 상기 게이트절연막(13)위에 투명화소전극(14)을 증착하며 상기 투명화소전극(14) 위에 게이트절연막(15)을 증착하고 상기 게이트 절연막(15)위에 연속으로 비정질 반도체층(16)및 n±비정질 반도체층(17)을 증착하며, 이에 소스/드레인전극(18)을 상기 투명화소전극(14)과 연결되도록 상기 게이트 절연막(15)에 홈(18′)을 형성하고 상기 홈(18′)에 상기 소스/드레인 전극(18)을 증착하는 공정으로 이루어져 축정용량의 면적을 감소시킬 수 있는 결과적으로 개구율이 향상하도록 한 것이다.The present invention relates to a method of manufacturing a liquid crystal display using a thin film transistor, the gate insulating film 13 is deposited on the gate electrode 12 formed on the glass substrate 11, the transparent pixel electrode on the gate insulating film 13 (14) and depositing a gate insulating film (15) on the transparent pixel electrode (14) and depositing an amorphous semiconductor layer (16) and an n ± amorphous semiconductor layer (17) on the gate insulating film (15), Thus, a groove 18 'is formed in the gate insulating layer 15 so that the source / drain electrode 18 is connected to the transparent pixel electrode 14, and the source / drain electrode 18 is formed in the groove 18'. As a result of the deposition process, it is possible to reduce the area of the storage capacity, so that the opening ratio is improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도의 (가)는 박막트랜지스터의 액정디스플레이어를 나타낸 부가용량 방식의 단위화소 등가회로, (나)는 박막트랜지스터의 액정디스플레이어를 나타낸 축적용량 방식의 단위화소 등가회로, 제4도의 (가)는 박막트랜지스터의 액정디스플레이어에서 구동에 대한 기본파형도, (나)는 박막트랜지스터의 액정디스플레이어에서 구동에 대한 합성파형도, 제5도는 본 발명 박막 트랜지스터의 액정디스플레이어를 나타낸 단위화소의 단면도.Fig. 1A is a unit capacitance equivalent circuit of a liquid crystal display of a thin film transistor, and Fig. 2A is a unit pixel equivalent circuit of a storage capacitance type showing a liquid crystal display of a thin film transistor. ) Is a basic waveform diagram of driving in a liquid crystal display of a thin film transistor, (b) is a synthetic waveform diagram of driving in a liquid crystal display of a thin film transistor, and FIG. 5 is a unit pixel showing a liquid crystal display of a thin film transistor of the present invention. Cross-section.
Claims (1)
Publications (1)
Publication Number | Publication Date |
---|---|
KR930016814A true KR930016814A (en) | 1993-08-30 |
Family
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