KR920020273A - 감방사선성 에스테르 및 이의 제조방법 - Google Patents
감방사선성 에스테르 및 이의 제조방법 Download PDFInfo
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- KR920020273A KR920020273A KR1019920005736A KR920005736A KR920020273A KR 920020273 A KR920020273 A KR 920020273A KR 1019920005736 A KR1019920005736 A KR 1019920005736A KR 920005736 A KR920005736 A KR 920005736A KR 920020273 A KR920020273 A KR 920020273A
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- hydrogen atom
- radiation sensitive
- alkyl
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material
- G02F1/065—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on electro-optical organic material in an optical waveguide structure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/71—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/76—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
- C07C311/15—Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of six-membered aromatic rings
- C07C311/16—Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the sulfonamide groups bound to hydrogen atoms or to an acyclic carbon atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
- C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (11)
- a)2내지 6개의 방향족 하이드록실 그룹을 함유하는 화합물, b)환-치환된(o-나프토퀴논 2-디아지드)-4-설폰산(디아조 화합물 D1)및c)추가로 치환되지 않은 (o-나프토퀴논 2-디아지드)-4- 또는 -5-설폰산(디아조 화합물 D2) 및 /또는 비-감방사선성 유기산 (화합물 Do)[여기서, D1: (D2및/또는 Do)의 몰 비는 0.1:1 내지 39:1이다]으로 이루어짐을 특징으로 하는 감방사선성(radiation-sensitive)에스테르.
- 제1항에 있어서, 2 내지 6개의 방향족 하이드록실 그룹을 함유하는 화합물이 일반식(I)의 화합물인 감방사선성 에스테르.상기식에서, Ra는 -H, -X-Rc 또는이고, Rb는 각각 동일하거나 상이하며, 수소 또는 할로겐 원자, 또는 하이드록실 또는 (C1-C6)알킬 그룹이고, 단 2 내지 6개의 Rb 그룹은 하이드록실 그룹이며, X는 단일결합, -O-,-S-,-SO2-,-CO-,-CO-CH2-, -CO-CH2-CH2-, -CO-CH2-CO, -CO-CH2-CH2-CO, -CO-O-, -CO-O-CH2-, -CO-O-CH2-CH2, -CH2-CO-O-CH2-, CH2-CO-O-CH2-CH2-, -CH2-, -CH2-CH2-, -(CH2)3-, -C(C3H)2- -C(CF3)2-, -CH-CH2-Y, -CH-CH2-CH2-Y, -C(CH3)-CH2Y, -C(CH3)-CH2-CH2-Y(여기서, CH2그룹은 -O-에 의해 치환될 수 있고, 수소 원자는 임의의 치환체에 의해 치환될 수 있다)이고, Y는 수소 원자 또는 임의로 치환된, 알콕시, 카복실, 알콕시카보닐, 알콕시알콕시카보닐 또는 아릴 그룹이며, Rc는 수소 원자 또는 임의로 치환된 알킬 또는 아릴 그룹이다.
- 제1항에 있어서, 2 내지 6개의 방향족 하이드록실 그룹을 함유하는 화합물이 일반식(II)의 화합물인 감방사선성 에스테르.상기식에서, Re는 수소 원자 또는 임의로 치환된 1-나프틸메틸 그룹인이고, Rb는 수소 원자 또는 하이드록실 그룹인데, 단 두 개 이상의 Rd 그룹은 하이드록실 그룹이다.
- 제1항에 있어서, 2 내지 6개의 방향족 하이드록실 그룹을 함유하는 화합물이 일반식(II)의 화합물인 감방사선성 에스테르.상기식에서, Rf는 수소 원자 또는 임의로 치환된 알킬, 알콕시 또는 아릴 그룹이다.
- 제1항에 있어서, 환-치환된(o-나프토퀴논 2-디아지드)-4-설폰산(디아조 화합물 D1)이 일반식 (IV)의 화합물인 감방사선성 에스테르.상기식에서, R1및 R2는 동일하거나 상이하며, 수소 원자, 탄소쇄가, 산소 원자, 아실아미노, 알콕시카보닐, N-알킬설파모일 또는 N,N-디알킬설파모일 그룹에 의해 차단될 수 있는 알킬, 알콕시 또는 알킬머캅토 그룹이고, 단 R1및 R2가 동시에 수소인 것은 아니다.
- 제1항에 있어서, (o-나프토퀴논 2-디아지드)-4- 또 -5-설폰산(디아조 화합물 D2)이 일반식 (V)의 화합물인 감방사선성 에스테르.상기식에서, R3및 R4는 상이하며, 수소 원자 또는 설포닐 그룹이다.
- 제1항에 있어서, 비-감방사선성 유기산 Do가 일반식(VI)의 화합물인 감방사선성 에스테르.R5-Z-OH (VI)상기식에서, R5는 탄소쇄가 산소 원자에 의해 차단될 수 있거나 치환될 수 있는, 포화되거나, 불포화된, 직쇄 또는 측쇄의 (C1-C25)알킬, (C1-C25)알콕시 또는 (C1-C25)-알킬머캅토 그룹, 또는 임의로 치환된 (C6-C14)아릴,(C6-C14)아르알킬 또는 (C6-C14)사이클로알킬 그룹이고, Z는 카보닐 또는 설포닐 그룹이다.
- 제5항에 있어서, R1이 수소 원자이고, R2가, 탄소쇄가 산소 원자에 의해 차단된 알킬, 알콕시 또는 알킬머캅토 그룹인 감방사선성 에스테르.
- 제8항에 있어서, R1이 수소 원자이고, R2가 7-메톡시 그룹인 감방사선성 에스테르.
- 제2항에 있어서, 방향족 폴리하이드록실 화합물이 트리-, 테트라-, 펜타- 또는 헥사-하이드록시벤조페논 또는 트리하이드록시 알킬 케톤인 감방사선성 에스테르.
- 제1항에 있어서, D1: (D2및/또는 Do)몰 비가 0.25:1 내지 19:1, 특히 1.5:1 내지 9:1인 감방사선성 에스테르.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4111443A DE4111443A1 (de) | 1991-04-09 | 1991-04-09 | Strahlungsempfindlicher ester sowie verfahren zu dessen herstellung |
DEP4111443.4 | 1991-04-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920020273A true KR920020273A (ko) | 1992-11-20 |
KR100193934B1 KR100193934B1 (ko) | 1999-06-15 |
Family
ID=6429134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920005736A KR100193934B1 (ko) | 1991-04-09 | 1992-04-07 | 방사선 민감성 에스테르 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5268252A (ko) |
EP (1) | EP0508269B1 (ko) |
JP (1) | JPH07113009B2 (ko) |
KR (1) | KR100193934B1 (ko) |
CA (1) | CA2065475A1 (ko) |
DE (2) | DE4111443A1 (ko) |
HK (1) | HK25496A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206348A (en) * | 1992-07-23 | 1993-04-27 | Morton International, Inc. | Hexahydroxybenzophenone sulfonate esters of diazonaphthoquinone sensitizers and positive photoresists employing same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3107109A1 (de) * | 1981-02-26 | 1982-09-09 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial |
DE3325022A1 (de) * | 1983-07-11 | 1985-01-24 | Hoechst Ag, 6230 Frankfurt | Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden |
DE3662952D1 (en) * | 1985-08-12 | 1989-05-24 | Hoechst Celanese Corp | Process for obtaining negative images from positive photoresists |
US5035976A (en) * | 1986-05-02 | 1991-07-30 | Hoechst Celanese Corporation | Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents |
DE3784549D1 (de) * | 1986-05-02 | 1993-04-15 | Hoechst Celanese Corp | Positiv-arbeitendes lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches aufzeichnungsmaterial. |
US4732836A (en) * | 1986-05-02 | 1988-03-22 | Hoechst Celanese Corporation | Novel mixed ester O-quinone photosensitizers |
US5162510A (en) * | 1986-05-02 | 1992-11-10 | Hoechst Celanese Corporation | Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer |
US4902785A (en) * | 1986-05-02 | 1990-02-20 | Hoechst Celanese Corporation | Phenolic photosensitizers containing quinone diazide and acidic halide substituents |
DE3837500A1 (de) * | 1988-11-04 | 1990-05-23 | Hoechst Ag | Neue, strahlungsempfindliche verbindungen, hiermit hergestelltes strahlungsempfindliches gemisch und aufzeichnungsmaterial |
-
1991
- 1991-04-09 DE DE4111443A patent/DE4111443A1/de not_active Withdrawn
-
1992
- 1992-03-30 DE DE59201315T patent/DE59201315D1/de not_active Expired - Fee Related
- 1992-03-30 EP EP92105467A patent/EP0508269B1/de not_active Expired - Lifetime
- 1992-04-01 US US07/863,679 patent/US5268252A/en not_active Expired - Fee Related
- 1992-04-07 CA CA002065475A patent/CA2065475A1/en not_active Abandoned
- 1992-04-07 KR KR1019920005736A patent/KR100193934B1/ko not_active IP Right Cessation
- 1992-04-08 JP JP4086920A patent/JPH07113009B2/ja not_active Expired - Fee Related
-
1996
- 1996-02-08 HK HK25496A patent/HK25496A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0508269B1 (de) | 1995-02-01 |
CA2065475A1 (en) | 1992-10-10 |
US5268252A (en) | 1993-12-07 |
DE4111443A1 (de) | 1992-10-15 |
JPH05132456A (ja) | 1993-05-28 |
JPH07113009B2 (ja) | 1995-12-06 |
HK25496A (en) | 1996-02-16 |
KR100193934B1 (ko) | 1999-06-15 |
EP0508269A1 (de) | 1992-10-14 |
DE59201315D1 (de) | 1995-03-16 |
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