KR920018854A - 액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법 - Google Patents
액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법 Download PDFInfo
- Publication number
- KR920018854A KR920018854A KR1019920002888A KR920002888A KR920018854A KR 920018854 A KR920018854 A KR 920018854A KR 1019920002888 A KR1019920002888 A KR 1019920002888A KR 920002888 A KR920002888 A KR 920002888A KR 920018854 A KR920018854 A KR 920018854A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- group
- precursor
- semiconductor
- dissolved
- Prior art date
Links
- 239000007791 liquid phase Substances 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 title claims 8
- 239000000463 material Substances 0.000 title claims 3
- 238000000034 method Methods 0.000 title claims 2
- 230000008021 deposition Effects 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 239000002243 precursor Substances 0.000 claims 6
- 239000003960 organic solvent Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims 2
- 238000009835 boiling Methods 0.000 claims 2
- -1 dicyclic dienes Chemical class 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 125000002524 organometallic group Chemical group 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000004703 alkoxides Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 액상 증착 공정을 행하기 위한 장치의 개략도.
Claims (3)
- 무수 유기용제에 용해된 유기금속 전구체를 포함하는 용액을 준비하는 것과, 배드(10) 온도가 유기금속 전구체의 분해온도 또는 그 이상에서 유지되는 일정 온도의 배드를 통해 용액을 순환하는 것과, 배드(10)내에 반도체 기판(12)을 담그는 것과, 반도체 기판의 표면상에 재료층을 증착하기 위해 유기 금속전구체를 열적으로 분해하는 것을 특징으로 하는 반도체 기판(12)상에 재료층의 액상증착방법.
- 무수 유기용제에 용해된 전이금속, Ⅲ-A족 금속, Ⅳ-A족 반도체 금속 및 Ⅱ-A족 금속으로 이루어진 그룹에서 선택된 금속을 함유하는 전구체를 포함하는 액체 혼합물을 제공하는 것과, 반도체 기판(12)을 액체 혼합물에 있게 하는 것과, 기판(12)상에 재료층을 형성하기 위해 용제의 노르말 비등점 이하의 온도에서 액상으로 전구체를 열적으로 분해하는 것을 포함하는 반도체 디바이스 재료층 형성방법.
- 금속화 아세틸아세톤, 알콕시드 금속 및 용해된 금속배위 유기 화합물에 대응하는 극성을 가진 유기용제에 용해된 Ⅳ-A족 반도체 금속치환 쌍고리 디엔으로 이루어진 그룹에서 선택된 금속배위 유기 전구체를 포함하는 액체 혼합물을 제공하는 것과, 반도체 디바이스(12)의 노출된 표면상에 박막을 형성하기 위해 용제의 비등점 이하의 온도에서 금속배위 유기화합물을 열적으로 분해하는 것을 포함하는 반도체 디바이스(12)상에 전이금속, 전이 산화금속, Ⅳ-A족 반도체 금속으로 이루어진 그룹에서 선택된 박막형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US666,309 | 1991-03-08 | ||
US07/666,309 US5236874A (en) | 1991-03-08 | 1991-03-08 | Method for forming a material layer in a semiconductor device using liquid phase deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920018854A true KR920018854A (ko) | 1992-10-22 |
Family
ID=24673670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920002888A KR920018854A (ko) | 1991-03-08 | 1992-02-25 | 액상증착을 이용한 반도체 디바이스에서의 재료층 형성방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5236874A (ko) |
EP (1) | EP0508582A3 (ko) |
JP (1) | JPH05152222A (ko) |
KR (1) | KR920018854A (ko) |
SG (1) | SG54195A1 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688565A (en) * | 1988-12-27 | 1997-11-18 | Symetrix Corporation | Misted deposition method of fabricating layered superlattice materials |
US6056994A (en) * | 1988-12-27 | 2000-05-02 | Symetrix Corporation | Liquid deposition methods of fabricating layered superlattice materials |
JPH04147651A (ja) * | 1990-04-02 | 1992-05-21 | Toshiba Corp | 半導体装置およびその製造方法 |
US5468679A (en) * | 1991-02-25 | 1995-11-21 | Symetrix Corporation | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
JPH06163585A (ja) * | 1992-11-18 | 1994-06-10 | Nippon Sheet Glass Co Ltd | 薄膜トランジスタアレイの製造方法 |
JP3724592B2 (ja) * | 1993-07-26 | 2005-12-07 | ハイニックス セミコンダクター アメリカ インコーポレイテッド | 半導体基板の平坦化方法 |
US5429989A (en) * | 1994-02-03 | 1995-07-04 | Motorola, Inc. | Process for fabricating a metallization structure in a semiconductor device |
US5506006A (en) * | 1994-05-04 | 1996-04-09 | National Science Council | Process for depositing silicon dioxide by liquid phase diposition |
US5955140A (en) * | 1995-11-16 | 1999-09-21 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
JP2008074704A (ja) * | 1998-01-19 | 2008-04-03 | Ube Ind Ltd | ジルコニウム酸化物複合体 |
JP2976028B1 (ja) * | 1998-10-13 | 1999-11-10 | 工業技術院長 | 緻密でエピタキシャルな金属酸化物膜の製造方法と、その金属酸化物前駆体及びその製造方法 |
US6086957A (en) * | 1999-05-28 | 2000-07-11 | Sandia Corporation | Method of producing solution-derived metal oxide thin films |
AU2003295678A1 (en) * | 2002-11-19 | 2004-06-15 | William Marsh Rice University | Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth |
TWI264138B (en) * | 2005-12-01 | 2006-10-11 | Univ Nat Taiwan | Long wavelength emission of Si MOS LED by Si/Ge heterojunction |
KR100768648B1 (ko) * | 2006-05-02 | 2007-10-18 | 학교법인 포항공과대학교 | 코어/쉘 구조 나노입자의 제조방법 |
US11555245B2 (en) | 2015-06-18 | 2023-01-17 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Metal oxide film formation method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5349972A (en) * | 1976-10-18 | 1978-05-06 | Seiko Epson Corp | Manufacture of semiconductor device |
US4340617A (en) * | 1980-05-19 | 1982-07-20 | Massachusetts Institute Of Technology | Method and apparatus for depositing a material on a surface |
US4359485A (en) * | 1981-05-01 | 1982-11-16 | Bell Telephone Laboratories, Incorporated | Radiation induced deposition of metal on semiconductor surfaces |
WO1986006361A1 (en) * | 1985-04-26 | 1986-11-06 | Sri International | Preparing metal compounds, alloys and metals by pyrolysis |
JPS62297493A (ja) * | 1986-06-16 | 1987-12-24 | Electroplating Eng Of Japan Co | 半導体ウェハー用メッキ装置 |
JP2729373B2 (ja) * | 1987-01-07 | 1998-03-18 | 東京応化工業 株式会社 | 金属酸化膜形成用塗布液 |
US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
-
1991
- 1991-03-08 US US07/666,309 patent/US5236874A/en not_active Expired - Fee Related
-
1992
- 1992-02-25 KR KR1019920002888A patent/KR920018854A/ko not_active Application Discontinuation
- 1992-03-03 EP EP19920301787 patent/EP0508582A3/en not_active Withdrawn
- 1992-03-03 SG SG1996003718A patent/SG54195A1/en unknown
- 1992-03-06 JP JP4084822A patent/JPH05152222A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0508582A3 (en) | 1993-10-27 |
SG54195A1 (en) | 1998-11-16 |
EP0508582A2 (en) | 1992-10-14 |
JPH05152222A (ja) | 1993-06-18 |
US5236874A (en) | 1993-08-17 |
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E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |