KR920007281A - 면 발광형 반도체 레이저 - Google Patents
면 발광형 반도체 레이저 Download PDFInfo
- Publication number
- KR920007281A KR920007281A KR1019910016034A KR910016034A KR920007281A KR 920007281 A KR920007281 A KR 920007281A KR 1019910016034 A KR1019910016034 A KR 1019910016034A KR 910016034 A KR910016034 A KR 910016034A KR 920007281 A KR920007281 A KR 920007281A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor laser
- semiconductor
- active layer
- quantum well
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000005253 cladding Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18338—Non-circular shape of the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예 에서의 반도체 레이저의 발광부 단면을 나타낸 사시도,
제2도는 제1도의 반도체 레이저 에서의 MOW 구조의 활성층의 확대단면도,
제3도 제3b도는 제1도의 반도체 레이저의 제조 공정을 나타낸 단면도.
Claims (3)
- 반도체 기판에 수직인 방향으로 빛을 출사하는 면발광형 반도체 레이저에서, 반사율이 다른 한 쌍의 반사경과 그들 상이의 다층 반도체 층을 가지며, 상기 반도체층 중 적어도 클래드층이 한개 또는 복수개인 기둥형으로 형성된 광공진기와, 기둥형의 상기 반도체층의 주위에 매설된 Ⅱ-Ⅳ족 화합물 반도체 에피택셜층과, 기둥형 부분을 가진 상기 클래드층의 하부층의 활성층을 다중 양자 우물 구조의 활성층으로 한 것을 특징으로 하는면발광형 반도체 레이저.
- 제1항에 있어서, 다중양자 우물구조의 사이 활성층의 하부층에는 상기 활성층과 평행한 방향으로 빛을 전반하는 웨이브 가이드 층을 가진 것을 특징으로 하는 발광형 반도체 레이저.
- 제2항에 있어서, 사이 웨이브 가이드층의 굴절율의 다중양자 우물구조의 상기 활성층의 등가 굴절율을 보다 작고, 상기 웨이브 가이드층 하부층의 클래드층의 굴절을 보다 큰것을 특징으로 하는 면발광층 반도체 레이저.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990-242000 | 1990-09-12 | ||
JP24200090 | 1990-09-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920007281A true KR920007281A (ko) | 1992-04-28 |
KR100210289B1 KR100210289B1 (ko) | 1999-07-15 |
Family
ID=17082765
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910016035A KR100210288B1 (ko) | 1990-09-12 | 1991-09-12 | 면발광형 반도체 레이저 |
KR1019910016033A KR100210290B1 (ko) | 1990-09-12 | 1991-09-12 | 면발광형 반도체 레이저 및 그 제조방법 |
KR1019910016034A KR100210289B1 (ko) | 1990-09-12 | 1991-09-12 | 면발광형 반도체 레이저 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910016035A KR100210288B1 (ko) | 1990-09-12 | 1991-09-12 | 면발광형 반도체 레이저 |
KR1019910016033A KR100210290B1 (ko) | 1990-09-12 | 1991-09-12 | 면발광형 반도체 레이저 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (3) | US5181221A (ko) |
EP (3) | EP0475371B1 (ko) |
KR (3) | KR100210288B1 (ko) |
DE (3) | DE69118065T2 (ko) |
TW (1) | TW229338B (ko) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5436922A (en) * | 1990-09-12 | 1995-07-25 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5317584A (en) * | 1990-09-12 | 1994-05-31 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5537666A (en) * | 1990-09-12 | 1996-07-16 | Seiko Epson Coropration | Surface emission type semiconductor laser |
US5356832A (en) * | 1990-09-12 | 1994-10-18 | Seiko Epson Corporation | Method of making surface emission type semiconductor laser |
US5404369A (en) * | 1990-09-12 | 1995-04-04 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5295148A (en) * | 1990-09-12 | 1994-03-15 | Seiko Epson Corporation | Surface emission type semiconductor laser |
EP0531542B1 (en) * | 1991-03-28 | 1996-01-10 | Seiko Epson Corporation | Surface emitting type semiconductor laser and its fabrication method |
DE69230566T2 (de) | 1991-05-14 | 2000-06-15 | Seiko Epson Corp., Tokio/Tokyo | Bilderzeugungsvorrichtung |
KR950007490B1 (ko) * | 1991-12-28 | 1995-07-11 | 엘지전자주식회사 | 반도체 레이저 |
US5341001A (en) * | 1992-02-13 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
US5245622A (en) * | 1992-05-07 | 1993-09-14 | Bandgap Technology Corporation | Vertical-cavity surface-emitting lasers with intra-cavity structures |
US5351255A (en) * | 1992-05-12 | 1994-09-27 | North Carolina State University Of Raleigh | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
JPH065975A (ja) * | 1992-06-22 | 1994-01-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ |
JP3095545B2 (ja) * | 1992-09-29 | 2000-10-03 | 株式会社東芝 | 面発光型半導体発光装置およびその製造方法 |
JPH0722646A (ja) * | 1993-06-30 | 1995-01-24 | Mitsubishi Chem Corp | 電流ブロック層を有するled |
SE501721C2 (sv) * | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Laseranordning med i en optisk kavitet seriekopplade laserstrukturer |
SE501722C2 (sv) * | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Ytemitterande laseranordning med vertikal kavitet |
DE69523100T2 (de) * | 1994-01-20 | 2002-06-06 | Seiko Epson Corp., Tokio/Tokyo | Oberflaechenemittierender laser und herstellungsverfahren |
JP3452982B2 (ja) * | 1994-08-24 | 2003-10-06 | ローム株式会社 | Ledプリントヘッド、およびledアレイチップ、ならびにそのledアレイチップの製造方法 |
US5778018A (en) * | 1994-10-13 | 1998-07-07 | Nec Corporation | VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices |
US5838705A (en) * | 1996-11-04 | 1998-11-17 | Motorola, Inc. | Light emitting device having a defect inhibition layer |
KR100322061B1 (ko) * | 1998-07-01 | 2002-03-08 | 김순택 | Crt용반도체레이저스크린 |
KR100322060B1 (ko) * | 1998-07-01 | 2002-03-08 | 김순택 | Crt용반도체레이저스크린및그제조방법 |
US6291839B1 (en) | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
DE19911433B4 (de) | 1999-03-04 | 2006-06-08 | Infineon Technologies Ag | Optische Sendeanordnung |
WO2001077773A2 (en) * | 2000-04-10 | 2001-10-18 | Lenslet Ltd. | Input configuration for shearing processor |
US7170919B2 (en) * | 2003-06-23 | 2007-01-30 | Northrop Grumman Corporation | Diode-pumped solid-state laser gain module |
KR100714639B1 (ko) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
JP2006128475A (ja) * | 2004-10-29 | 2006-05-18 | Mitsubishi Electric Corp | 半導体レーザ |
KR100638732B1 (ko) * | 2005-04-15 | 2006-10-30 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자의 제조방법 |
US8373153B2 (en) * | 2009-05-26 | 2013-02-12 | University Of Seoul Industry Cooperation Foundation | Photodetectors |
US8367925B2 (en) * | 2009-06-29 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Light-electricity conversion device |
US8395141B2 (en) * | 2009-07-06 | 2013-03-12 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
US8748862B2 (en) * | 2009-07-06 | 2014-06-10 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
US8227793B2 (en) | 2009-07-06 | 2012-07-24 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting the visible light spectrum |
US8809834B2 (en) * | 2009-07-06 | 2014-08-19 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting long wavelength radiation |
US8368990B2 (en) | 2009-08-21 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Polariton mode optical switch with composite structure |
US8368047B2 (en) * | 2009-10-27 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US8058641B2 (en) | 2009-11-18 | 2011-11-15 | University of Seoul Industry Corporation Foundation | Copper blend I-VII compound semiconductor light-emitting devices |
US10186676B2 (en) * | 2017-03-13 | 2019-01-22 | Intel Corporation | Emissive devices for displays |
US10651527B2 (en) | 2017-08-22 | 2020-05-12 | Qorvo Us, Inc. | Spatial power-combining devices with segmented waveguides and antennas |
WO2020026573A1 (ja) * | 2018-07-31 | 2020-02-06 | ソニー株式会社 | 面発光半導体レーザ |
KR102515120B1 (ko) * | 2019-01-21 | 2023-03-29 | 한온시스템 주식회사 | 스크롤 압축기 |
KR20230012705A (ko) | 2021-07-16 | 2023-01-26 | 주식회사 노브메타파마 | 고시페틴의 제조방법 |
CN113675726A (zh) * | 2021-10-21 | 2021-11-19 | 福建慧芯激光科技有限公司 | 一种高速垂直腔面发射激光器的外延结构 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6170280A (ja) * | 1984-09-12 | 1986-04-11 | M & M Technol:Kk | 弁 |
JPS6179280A (ja) * | 1984-09-27 | 1986-04-22 | Agency Of Ind Science & Technol | 面発光型半導体レ−ザ装置及びその製造方法 |
FR2606223B1 (fr) * | 1986-10-29 | 1996-03-01 | Seiko Epson Corp | Laser a semiconducteur et son procede de fabrication |
JPH01125990A (ja) * | 1987-11-11 | 1989-05-18 | Mitsubishi Electric Corp | 半導体発光装置 |
JPH01264285A (ja) * | 1988-04-15 | 1989-10-20 | Omron Tateisi Electron Co | 面発光型半導体レーザ |
JPH01266779A (ja) * | 1988-04-19 | 1989-10-24 | Canon Inc | 面発光レーザ |
US5031187A (en) * | 1990-02-14 | 1991-07-09 | Bell Communications Research, Inc. | Planar array of vertical-cavity, surface-emitting lasers |
US5045897A (en) * | 1990-03-14 | 1991-09-03 | Santa Barbara Research Center | Quaternary II-VI materials for photonics |
US5052016A (en) * | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
US5068868A (en) * | 1990-05-21 | 1991-11-26 | At&T Bell Laboratories | Vertical cavity surface emitting lasers with electrically conducting mirrors |
US5086430A (en) * | 1990-12-14 | 1992-02-04 | Bell Communications Research, Inc. | Phase-locked array of reflectivity-modulated surface-emitting lasers |
-
1991
- 1991-09-09 US US07/756,980 patent/US5181221A/en not_active Expired - Lifetime
- 1991-09-09 US US07/756,979 patent/US5181219A/en not_active Expired - Lifetime
- 1991-09-09 US US07/756,981 patent/US5182757A/en not_active Expired - Lifetime
- 1991-09-10 DE DE69118065T patent/DE69118065T2/de not_active Expired - Lifetime
- 1991-09-10 EP EP91115316A patent/EP0475371B1/en not_active Expired - Lifetime
- 1991-09-10 DE DE69116038T patent/DE69116038T2/de not_active Expired - Lifetime
- 1991-09-10 DE DE69118066T patent/DE69118066T2/de not_active Expired - Lifetime
- 1991-09-10 EP EP91115317A patent/EP0475372B1/en not_active Expired - Lifetime
- 1991-09-10 EP EP91115318A patent/EP0475373B1/en not_active Expired - Lifetime
- 1991-09-12 KR KR1019910016035A patent/KR100210288B1/ko not_active IP Right Cessation
- 1991-09-12 KR KR1019910016033A patent/KR100210290B1/ko not_active IP Right Cessation
- 1991-09-12 KR KR1019910016034A patent/KR100210289B1/ko not_active IP Right Cessation
- 1991-09-14 TW TW080107294A patent/TW229338B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5182757A (en) | 1993-01-26 |
DE69118065T2 (de) | 1996-09-19 |
KR920007282A (ko) | 1992-04-28 |
DE69118066D1 (de) | 1996-04-25 |
US5181219A (en) | 1993-01-19 |
DE69118066T2 (de) | 1996-09-19 |
KR100210288B1 (ko) | 1999-07-15 |
US5181221A (en) | 1993-01-19 |
EP0475371B1 (en) | 1996-03-20 |
EP0475372A3 (en) | 1992-08-05 |
EP0475373A3 (en) | 1992-08-12 |
EP0475372B1 (en) | 1996-01-03 |
EP0475371A2 (en) | 1992-03-18 |
EP0475372A2 (en) | 1992-03-18 |
KR100210290B1 (ko) | 1999-07-15 |
EP0475373B1 (en) | 1996-03-20 |
DE69116038T2 (de) | 1996-06-20 |
DE69118065D1 (de) | 1996-04-25 |
EP0475373A2 (en) | 1992-03-18 |
EP0475371A3 (en) | 1992-08-05 |
DE69116038D1 (de) | 1996-02-15 |
TW229338B (ko) | 1994-09-01 |
KR100210289B1 (ko) | 1999-07-15 |
KR920007283A (ko) | 1992-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920007281A (ko) | 면 발광형 반도체 레이저 | |
ATE487255T1 (de) | Halbleiterlaserelement | |
KR960019885A (ko) | 연속적인 그레이딩을 가진 수직 캐비티의 표면 발산 레이저 | |
JPH1012959A (ja) | 半導体発光素子、発光素子モジュールおよび半導体発光素子の製造方法 | |
KR960003000A (ko) | 패턴화 미러 수직 공동 표면 방출 레이저(vcsel) 및 그 제조 방법 | |
KR960024453A (ko) | 광 센싱 장치 | |
JP2004521491A5 (ko) | ||
JPH0555703A (ja) | 面発光レーザ装置 | |
KR970054998A (ko) | 벽개면을 갖는 반도체 장치 | |
ATE268511T1 (de) | Lichtwellenleiter und herstellungsverfahren | |
KR950034939A (ko) | 반도체 레이저 및 이것을 사용한 광센싱장치 | |
KR970028624A (ko) | 도파로구조를 지닌 광필터 | |
KR880011965A (ko) | 분포 귀환형 반도체 레이저 | |
KR870002669A (ko) | 반도체 레이저다이오드 | |
EP0908959A2 (en) | Semiconductor diode | |
KR920003592A (ko) | 반도체레이저 | |
US9929532B1 (en) | Broad area semiconductor laser device | |
KR950004667A (ko) | 반도체레이저소자 및 그 제작방법 | |
TW361004B (en) | Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication | |
KR950012951A (ko) | 반도체 레이저 장치 | |
KR950034943A (ko) | 광디바이스 | |
KR970060603A (ko) | 높은 주변 온도에서도 저잡음으로 동작이 가능한 반도체 레이저 디바이스 | |
JPS63211784A (ja) | 量子井戸型半導体レ−ザ | |
KR920011003A (ko) | 화합물 반도체 레이저 | |
KR960043385A (ko) | 반도체 레이저 다이오드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20110318 Year of fee payment: 13 |
|
EXPY | Expiration of term |