KR920001719A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR920001719A KR920001719A KR1019910009214A KR910009214A KR920001719A KR 920001719 A KR920001719 A KR 920001719A KR 1019910009214 A KR1019910009214 A KR 1019910009214A KR 910009214 A KR910009214 A KR 910009214A KR 920001719 A KR920001719 A KR 920001719A
- Authority
- KR
- South Korea
- Prior art keywords
- power supply
- voltage
- predetermined voltage
- supply voltages
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 238000001514 detection method Methods 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Power Sources (AREA)
- Stand-By Power Supply Arrangements (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 이 발명의 제 1의 실시예에 의한 반도체장치의 구성을 표시하는 블록도이다.
제 2도는 제 1도의 반도체장치의 주요부의 회로구성을 표시하는 도면이다.
제 3도는 제 2도에 표시되는 전압레벨차 검출회로의 입출력 특성을 표시하는 도면이다.
Claims (1)
- 외부에서 제1및 제2의 전원전압을 각각 받는 제1및 제2전원단자와, 상기 제1의 전원단자에서 제1의 전원전압을 받고, 그의 제1의 전원전압을 소정의 전압으로 변환하는 전압교환수단과, 상기 전압교환수단에 의해 변환된 상기 소정의 전압에 의해 동작하는 내부회로수단과, 상기 제1및 제2의 전원전압을 받고, 그들의 제1및 제2의 전원전압의 전압차가 소정의 전압차로 되어 있는 것을 검출하는 검출수단, 그리고 상기 검출수단이 상기 소정의 전압차를 검출했을 때에, 상기 전압변환수단에 의해 변환된 상기 소정의 전압에 바꾸되, 상기 제1및 제2의 전원 전압의 어느 한쪽에 의해 상기 내부 회로수단을 동작하게 하는 전원수단을 비치한 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2148130 | 1990-06-05 | ||
| JP2-148130 | 1990-06-05 | ||
| JP2148130A JP2544993B2 (ja) | 1990-06-05 | 1990-06-05 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920001719A true KR920001719A (ko) | 1992-01-30 |
| KR960002775B1 KR960002775B1 (ko) | 1996-02-26 |
Family
ID=15445932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910009214A KR960002775B1 (ko) | 1990-06-05 | 1991-06-04 | 반도체장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2544993B2 (ko) |
| KR (1) | KR960002775B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007835A (ja) * | 2001-06-25 | 2003-01-10 | Hitachi Ltd | 半導体装置、および半導体装置のテスト方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2721151B2 (ja) * | 1986-04-01 | 1998-03-04 | 株式会社東芝 | 半導体集積回路装置 |
| JPH0415949A (ja) * | 1990-05-09 | 1992-01-21 | Mitsubishi Electric Corp | 半導体装置 |
-
1990
- 1990-06-05 JP JP2148130A patent/JP2544993B2/ja not_active Expired - Lifetime
-
1991
- 1991-06-04 KR KR1019910009214A patent/KR960002775B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2544993B2 (ja) | 1996-10-16 |
| KR960002775B1 (ko) | 1996-02-26 |
| JPH0439963A (ja) | 1992-02-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20010222 Year of fee payment: 6 |
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| LAPS | Lapse due to unpaid annual fee |