KR910020934A - TITA Morse FET Manufacturing Method and Structure - Google Patents
TITA Morse FET Manufacturing Method and Structure Download PDFInfo
- Publication number
- KR910020934A KR910020934A KR1019900006659A KR900006659A KR910020934A KR 910020934 A KR910020934 A KR 910020934A KR 1019900006659 A KR1019900006659 A KR 1019900006659A KR 900006659 A KR900006659 A KR 900006659A KR 910020934 A KR910020934 A KR 910020934A
- Authority
- KR
- South Korea
- Prior art keywords
- tita
- source
- fet manufacturing
- drain
- morse
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 따른 TITA 모스 FET구조도로서, (A)도는 평면도이고, (B)도는 단면도이다, 제3도 (A)∼(G)는 본 발명에 따른 TITA 모스 FET 제조공정도.2 is a TITA Morse FET structure diagram according to the present invention, (A) is a plan view, (B) is a cross-sectional view, Figure 3 (A) to (G) is a manufacturing process diagram of the TITA MOS FET according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900006659A KR910020934A (en) | 1990-05-10 | 1990-05-10 | TITA Morse FET Manufacturing Method and Structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900006659A KR910020934A (en) | 1990-05-10 | 1990-05-10 | TITA Morse FET Manufacturing Method and Structure |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910020934A true KR910020934A (en) | 1991-12-20 |
Family
ID=67482451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900006659A KR910020934A (en) | 1990-05-10 | 1990-05-10 | TITA Morse FET Manufacturing Method and Structure |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR910020934A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093935A (en) * | 1993-02-05 | 2000-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US6683350B1 (en) | 1993-02-05 | 2004-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
-
1990
- 1990-05-10 KR KR1019900006659A patent/KR910020934A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093935A (en) * | 1993-02-05 | 2000-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US6683350B1 (en) | 1993-02-05 | 2004-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US7011993B2 (en) | 1993-02-05 | 2006-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US7394130B2 (en) | 1993-02-05 | 2008-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR850005163A (en) | Manufacturing Method of Field Effect Transistor | |
KR910020934A (en) | TITA Morse FET Manufacturing Method and Structure | |
KR920010955A (en) | SOIMOS transistor | |
KR930018757A (en) | Compound Semiconductor Device | |
EP0872895A3 (en) | Vertical insulated gate field-effect transistor, method of making the same and corresponding integrated circuit | |
KR950010138A (en) | MNOS semiconductor device | |
KR930003423A (en) | Manufacturing Method of Semiconductor Device | |
KR920013755A (en) | Morse transistor using multi-gate and manufacturing method thereof | |
KR920015592A (en) | LDD structure transistor manufacturing method | |
KR980005881A (en) | Method of manufacturing semiconductor device | |
KR910017672A (en) | MOSFET manufacturing method | |
KR930020735A (en) | Dual Gate Field Effect Semiconductor Device | |
KR920008950A (en) | Isolation Method of Semiconductor Devices | |
KR950028019A (en) | Power device manufacturing method | |
KR920015433A (en) | MOS transistor process method | |
KR920013767A (en) | Method of manufacturing a hot carrier prevention transistor | |
KR920013744A (en) | Soy structure transistor manufacturing method | |
KR930005244A (en) | Method of manufacturing trench type MOS transistor | |
KR900011043A (en) | MOSFET device and manufacturing method | |
KR900015264A (en) | Asymmetric self-aligned ion implantation method | |
KR920015424A (en) | Semiconductor manufacturing method | |
KR970003424A (en) | Gate Forming Method of Field Effect Transistor | |
KR920015437A (en) | MOS transistor | |
KR920010769A (en) | Manufacturing method of MOS transistor using local nitrogen ion implantation | |
KR910019204A (en) | LDD manufacturing method using slop gate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |