KR910020934A - TITA Morse FET Manufacturing Method and Structure - Google Patents

TITA Morse FET Manufacturing Method and Structure Download PDF

Info

Publication number
KR910020934A
KR910020934A KR1019900006659A KR900006659A KR910020934A KR 910020934 A KR910020934 A KR 910020934A KR 1019900006659 A KR1019900006659 A KR 1019900006659A KR 900006659 A KR900006659 A KR 900006659A KR 910020934 A KR910020934 A KR 910020934A
Authority
KR
South Korea
Prior art keywords
tita
source
fet manufacturing
drain
morse
Prior art date
Application number
KR1019900006659A
Other languages
Korean (ko)
Inventor
김기홍
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900006659A priority Critical patent/KR910020934A/en
Publication of KR910020934A publication Critical patent/KR910020934A/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

TITA 모스 FET제조방법 및 구조TITA Morse FET Manufacturing Method and Structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 TITA 모스 FET구조도로서, (A)도는 평면도이고, (B)도는 단면도이다, 제3도 (A)∼(G)는 본 발명에 따른 TITA 모스 FET 제조공정도.2 is a TITA Morse FET structure diagram according to the present invention, (A) is a plan view, (B) is a cross-sectional view, Figure 3 (A) to (G) is a manufacturing process diagram of the TITA MOS FET according to the present invention.

Claims (2)

소오스(108)와 드레인(109) 영역의 기판(100)을 식각한후 게이트(107)와 소오스/드레인(108, 109)을 형성하여 채널길이(L1)가 증대되도록 한 것을 특징으로하는 TITA 모스 FET제조방법.After etching the substrate 100 in the source 108 and drain 109 regions, the gate length 107 and the source / drain 108 and 109 are formed to increase the channel length L1. FET manufacturing method. 아이솔레이션 영역과 소오스/드레인(108, 109)영역을 차례로 식각하여 소오스/드레인(108, 109) 사이의 실리콘 기판(100)을 돌출시켜 채널길이(L1)는 증대시키고, 아이솔레이션(105)은 트렌치(102)을 이용한 것을 특징으로 하는 TITA모스 FET구조.The isolation region and the source / drain regions 108 and 109 are sequentially etched to protrude the silicon substrate 100 between the source and drain regions 108 and 109 so that the channel length L1 is increased, and the isolation 105 is formed in the trench ( TITA mos FET structure, characterized in that using 102). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900006659A 1990-05-10 1990-05-10 TITA Morse FET Manufacturing Method and Structure KR910020934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900006659A KR910020934A (en) 1990-05-10 1990-05-10 TITA Morse FET Manufacturing Method and Structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900006659A KR910020934A (en) 1990-05-10 1990-05-10 TITA Morse FET Manufacturing Method and Structure

Publications (1)

Publication Number Publication Date
KR910020934A true KR910020934A (en) 1991-12-20

Family

ID=67482451

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006659A KR910020934A (en) 1990-05-10 1990-05-10 TITA Morse FET Manufacturing Method and Structure

Country Status (1)

Country Link
KR (1) KR910020934A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093935A (en) * 1993-02-05 2000-07-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US6683350B1 (en) 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093935A (en) * 1993-02-05 2000-07-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US6683350B1 (en) 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US7011993B2 (en) 1993-02-05 2006-03-14 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
US7394130B2 (en) 1993-02-05 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same

Similar Documents

Publication Publication Date Title
KR850005163A (en) Manufacturing Method of Field Effect Transistor
KR910020934A (en) TITA Morse FET Manufacturing Method and Structure
KR920010955A (en) SOIMOS transistor
KR930018757A (en) Compound Semiconductor Device
EP0872895A3 (en) Vertical insulated gate field-effect transistor, method of making the same and corresponding integrated circuit
KR950010138A (en) MNOS semiconductor device
KR930003423A (en) Manufacturing Method of Semiconductor Device
KR920013755A (en) Morse transistor using multi-gate and manufacturing method thereof
KR920015592A (en) LDD structure transistor manufacturing method
KR980005881A (en) Method of manufacturing semiconductor device
KR910017672A (en) MOSFET manufacturing method
KR930020735A (en) Dual Gate Field Effect Semiconductor Device
KR920008950A (en) Isolation Method of Semiconductor Devices
KR950028019A (en) Power device manufacturing method
KR920015433A (en) MOS transistor process method
KR920013767A (en) Method of manufacturing a hot carrier prevention transistor
KR920013744A (en) Soy structure transistor manufacturing method
KR930005244A (en) Method of manufacturing trench type MOS transistor
KR900011043A (en) MOSFET device and manufacturing method
KR900015264A (en) Asymmetric self-aligned ion implantation method
KR920015424A (en) Semiconductor manufacturing method
KR970003424A (en) Gate Forming Method of Field Effect Transistor
KR920015437A (en) MOS transistor
KR920010769A (en) Manufacturing method of MOS transistor using local nitrogen ion implantation
KR910019204A (en) LDD manufacturing method using slop gate

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application