KR910019266A - Improved manufacturing method of photodiode for optical communication - Google Patents

Improved manufacturing method of photodiode for optical communication

Info

Publication number
KR910019266A
KR910019266A KR1019900005908A KR900005908A KR910019266A KR 910019266 A KR910019266 A KR 910019266A KR 1019900005908 A KR1019900005908 A KR 1019900005908A KR 900005908 A KR900005908 A KR 900005908A KR 910019266 A KR910019266 A KR 910019266A
Authority
KR
South Korea
Prior art keywords
photodiode
optical communication
improved manufacturing
manufacturing
improved
Prior art date
Application number
KR1019900005908A
Other languages
Korean (ko)
Other versions
KR930001905B1 (en
Inventor
박찬용
이용탁
Original Assignee
한국 전기통신공사
재단법인 한국전자통신 연구소
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국 전기통신공사, 재단법인 한국전자통신 연구소 filed Critical 한국 전기통신공사
Priority to KR1019900005908A priority Critical patent/KR930001905B1/en
Publication of KR910019266A publication Critical patent/KR910019266A/en
Application granted granted Critical
Publication of KR930001905B1 publication Critical patent/KR930001905B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
KR1019900005908A 1990-04-26 1990-04-26 Manufacturing method of photo diode for improved photo-fiber communication KR930001905B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900005908A KR930001905B1 (en) 1990-04-26 1990-04-26 Manufacturing method of photo diode for improved photo-fiber communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900005908A KR930001905B1 (en) 1990-04-26 1990-04-26 Manufacturing method of photo diode for improved photo-fiber communication

Publications (2)

Publication Number Publication Date
KR910019266A true KR910019266A (en) 1991-11-30
KR930001905B1 KR930001905B1 (en) 1993-03-19

Family

ID=19298410

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005908A KR930001905B1 (en) 1990-04-26 1990-04-26 Manufacturing method of photo diode for improved photo-fiber communication

Country Status (1)

Country Link
KR (1) KR930001905B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100753667B1 (en) * 2001-12-29 2007-08-31 매그나칩 반도체 유한회사 Deposition method of silicon nitride in semiconductor production

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110379901B (en) * 2019-05-22 2020-10-27 华灿光电(苏州）有限公司 Light emitting diode chip and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100753667B1 (en) * 2001-12-29 2007-08-31 매그나칩 반도체 유한회사 Deposition method of silicon nitride in semiconductor production

Also Published As

Publication number Publication date
KR930001905B1 (en) 1993-03-19

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19971211

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee