KR100753667B1 - Deposition method of silicon nitride in semiconductor production - Google Patents

Deposition method of silicon nitride in semiconductor production Download PDF

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KR100753667B1
KR100753667B1 KR1020010088626A KR20010088626A KR100753667B1 KR 100753667 B1 KR100753667 B1 KR 100753667B1 KR 1020010088626 A KR1020010088626 A KR 1020010088626A KR 20010088626 A KR20010088626 A KR 20010088626A KR 100753667 B1 KR100753667 B1 KR 100753667B1
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silicon nitride
silicon
nitride film
oxide film
film
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KR20030058231A (en
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전재규
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매그나칩 반도체 유한회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma

Abstract

본 발명은 반도체 소자 제조 공정에서의 질소 플라즈마 소스를 이용한 실리콘 질화막 증착 방법에 관한 것이다. 여기에 개시되는 반도체 제조 방법은 반도체 기판에 실리콘 산화막을 성장하는 단계와, 실리콘 산화막이 성장된 반도체 기판에 질소 플라즈마 소스를 이용하여 실리콘 질화막을 증착하는 단계를 포함한다. 여기서 실리콘 질화막을 증착하는 단계는 실리콘 산화막의 표면에서 질소 플라즈마 소스를 이용하여 실리콘 산화막 내부의 실리콘 원소와 결합을 이루는 산소 원자를 질소 원자로 치환하고, 실리콘 원자와 질소 원자가 결합된 구조를 시드(seed)로 하여 실리콘 질화막을 형성한다. 따라서 본 발명에 의하면, LOCOS 방식의 반도체 소자의 제조 공정에서 필드 산화막을 성장시킬 때, 산화 버퍼 또는 절연막으로 사용되는 실리콘 질화막의 성장을 질소 플라즈마 소스로 처리하여 실리콘 질화막의 특성을 향상시킨다.The present invention relates to a silicon nitride film deposition method using a nitrogen plasma source in the semiconductor device manufacturing process. The semiconductor manufacturing method disclosed herein includes growing a silicon oxide film on a semiconductor substrate, and depositing a silicon nitride film on a semiconductor substrate on which the silicon oxide film is grown by using a nitrogen plasma source. In the depositing of the silicon nitride film, a nitrogen atom is replaced with an oxygen atom that forms a bond with a silicon element inside the silicon oxide film by using a nitrogen plasma source on the surface of the silicon oxide film, and a structure where the silicon atom and the nitrogen atom are bonded is seeded. A silicon nitride film is formed as described above. Therefore, according to the present invention, when the field oxide film is grown in the LOCOS type semiconductor device manufacturing process, the growth of the silicon nitride film used as the oxidation buffer or the insulating film is treated with a nitrogen plasma source to improve the characteristics of the silicon nitride film.

반도체 기판, 실리콘 산화막, 실리콘 질화막, 플라즈마, 질소, 치환Semiconductor Substrate, Silicon Oxide, Silicon Nitride, Plasma, Nitrogen, Substitution

Description

반도체 제조 공정에서의 질소 플라즈마 소스를 이용한 실리콘 질화막 증착 방법{DEPOSITION METHOD OF SILICON NITRIDE IN SEMICONDUCTOR PRODUCTION}Silicon nitride film deposition method using nitrogen plasma source in semiconductor manufacturing process {DEPOSITION METHOD OF SILICON NITRIDE IN SEMICONDUCTOR PRODUCTION}

도 1은 반도체 제조 공정에서의 일반적인 실리콘 질화막 증착 공정을 나타내는 도면;1 shows a general silicon nitride film deposition process in a semiconductor manufacturing process;

도 2는 본 발명에 따른 실리콘 질화막 증착 공정을 나타낸 도면;2 shows a silicon nitride film deposition process according to the present invention;

삭제delete

* 도면의 주요 부분에 대한 부호 설명 *Explanation of symbols on the main parts of the drawings

10 : 반도체 기판10: semiconductor substrate

12 : 실리콘 산화막12 silicon oxide film

14 : 실리콘 질화막14 silicon nitride film

본 발명은 반도체 제조 방법에 관한 것으로, 좀 더 구체적으로는 반도체 소자 제조 공정의 LOCOS 공정에서 질소 플라즈마 소스를 이용하여 실리콘 기판에 실리콘 질화막을 증착하는 방법에 관한 것이다. The present invention relates to a semiconductor manufacturing method, and more particularly to a method of depositing a silicon nitride film on a silicon substrate using a nitrogen plasma source in the LOCOS process of the semiconductor device manufacturing process.                         

실리콘 질화막은 확산 방지막으로서의 성질을 갖기 때문에 실리콘 소자의 보호막으로 사용되며, 실리콘보다 열산화 속도가 느리기 때문에 LOCOS(Loal Oxidation of Silicon) 방식에서와 같은 선택적 산화를 위한 마스크로 사용되는 등 용도가 다양한 물질이다.Silicon nitride film is used as a protective film for silicon devices because it has a property as a diffusion barrier, and since thermal oxidation rate is slower than silicon, it is used as a mask for selective oxidation such as LOCOS (Loal Oxidation of Silicon) method. to be.

반도체 소자의 제조 공정의 소자 분리(isolation) 기술 중 가장 기본이 되는 LOCOS 방식은 반도체 기판을 열산화시켜 산화막을 성장시킨다.The LOCOS method, which is the most basic element isolation technology of the semiconductor device manufacturing process, thermally oxidizes a semiconductor substrate to grow an oxide film.

이어서 화학 기상 증착법으로 실리콘 질화막을 증착한다. 그리고 활성 영역과 필드 영역을 형성하기 위해서 사진 공정을 통해 마스크를 형성하고, 활성 영역에 포토레지스터를 형성한다.Subsequently, a silicon nitride film is deposited by chemical vapor deposition. A mask is formed through a photo process to form the active region and the field region, and a photoresist is formed in the active region.

도 1을 참조하면, LOCOS 방식을 이용하는 반도체 제조 방법에서 실리콘 기판(10)에 열산화를 시켜서 실리콘 산화막(12)을 형성한다. 이 때, 실리콘 산화막(12)의 표면에는 산소 원자로 구성되어 있음을 알 수 있다.Referring to FIG. 1, a silicon oxide film 12 is formed by thermally oxidizing a silicon substrate 10 in a semiconductor manufacturing method using a LOCOS method. At this time, it can be seen that the surface of the silicon oxide film 12 is composed of oxygen atoms.

이어서 포토레지스터를 식각 마스크로하여 필드 영역의 질화막을 제거하고 포토레지스터를 제거한다. 이 때, 질화막이 남아 있으면, 건식 식각으로 오버에칭하여 이를 완전히 제거한 후, 반도체 기판이 손상되지 않도록 하기 위하여 패드 산화막의 일부가 남아 있도록 오버에칭 타겟을 정한다. 그리고 질화막이 없는 필드 영역에만 필드 산화막이 형성된다.Subsequently, the nitride film of the field region is removed using the photoresist as an etching mask and the photoresist is removed. At this time, if the nitride film remains, after overetching by dry etching to completely remove it, the overetching target is defined so that a part of the pad oxide film remains so as not to damage the semiconductor substrate. The field oxide film is formed only in the field region without the nitride film.

질화막에서 산화제의 확산 속도가 매우 느리기 때문에, 질화막은 필드 영역에서만 선택적으로 산화되도록 한다. 이 후, 질화막을 제거하고 패드 산화막을 제거한다. 또한 질화막 또는 패드 산화막 제거시, 완전히 제거되지 않는 미세한 찌 꺼기나 LOCOS 공정 중에 도입된 각종 결함들을 제거하기 위해서 희생 산화막을 성장시킨 후, 이를 다시 제거함으로써 LOCOS 공정이 완료된다.Since the diffusion rate of the oxidant in the nitride film is very slow, the nitride film is selectively oxidized only in the field region. Thereafter, the nitride film is removed and the pad oxide film is removed. In addition, when removing the nitride film or the pad oxide film, the LOCOS process is completed by growing the sacrificial oxide film to remove fine debris or various defects introduced during the LOCOS process, and then removing it again.

따라서 LOCOS 방식을 이용하는 반도체 집적 회로의 제조 공정에서 기판 위에 필드 산화막을 성장할 때, 산화 버퍼용 또는 절연막으로서 실리콘 질화막을 많이 사용한다. 이 때, 기판 위에 성장된 실리콘 산화막 위에 실리콘 질화막을 그대로 증착하게 되어 그 결정성이 많이 떨어지게 되어 절연막으로서의 특성이 많이 저하된다. 그리고 이 후 공정에서 포토레지스터 패터닝시 노광되는 빛과 난반사를 일으켜 실리콘 질화막과 포토레지스터가 반응하게 되며, 이로 인하여 패터닝시 현상이 잘 이루어지지 않게 되는 감광액 찌거기 즉, 포토레지스터 스컴(PR scum)이 생성되는 문제점이 있다.Therefore, when growing a field oxide film on a substrate in the manufacturing process of a semiconductor integrated circuit using a LOCOS method, a silicon nitride film is often used for an oxidation buffer or as an insulating film. At this time, the silicon nitride film is deposited on the silicon oxide film grown on the substrate as it is, the crystallinity is much lowered, and the characteristics as the insulating film are much lowered. In the subsequent process, light and diffuse reflection during photoresist patterning cause a silicon nitride film and a photoresist to react, and thus photoresist residues, that is, a photoresist scum, are generated. There is a problem.

본 발명의 목적은 상술한 문제점을 해결하기 위한 것으로, 반도체 소자 제조 공정의 LOCOS 공정에서 질소 플라즈마 소스를 이용하여 실리콘 기판에 실리콘 질화막을 증착하는 방법을 제공하는데 있다. 이는 실리콘 산화막 위에 실리콘 질화막을 성장시키기 전에 질소 플라즈마 소스를 이용한 질화막 처리 공정을 수행한다. 이로 인해서 실리콘 산화막 표면에서 산소 원자가 질소 원자로 치환되면서, 실리콘 질화막 성장의 시드가 된다. 이를 이용해서 우수한 결정질의 실리콘 질화막을 성장시킨다.SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and to provide a method of depositing a silicon nitride film on a silicon substrate using a nitrogen plasma source in a LOCOS process of a semiconductor device manufacturing process. It performs a nitride film treatment process using a nitrogen plasma source before growing a silicon nitride film on the silicon oxide film. As a result, oxygen atoms are replaced with nitrogen atoms on the surface of the silicon oxide film, thereby becoming seeds of silicon nitride film growth. By using this, an excellent crystalline silicon nitride film is grown.

상술한 목적을 달성하기 위한 본 발명의 특징에 의하면, 반도체 제조 방법에 있어서, 반도체 기판에 실리콘 산화막을 성장하는 단계와, 상기 실리콘 산화막이 성장된 반도체 기판에 질소 플라즈마 소스를 이용하여 실리콘 질화막을 증착하는 단계를 포함한다.According to a feature of the present invention for achieving the above object, in the semiconductor manufacturing method, growing a silicon oxide film on a semiconductor substrate, and depositing a silicon nitride film on a semiconductor substrate on which the silicon oxide film is grown using a nitrogen plasma source It includes a step.

여기서 상기 실리콘 질화막을 증착하는 단계는 상기 실리콘 산화막의 표면에서 상기 질소 플라즈마 소스를 이용하여 상기 실리콘 산화막 내부의 실리콘 원소와 결합을 이루는 산소 원자를 질소 원자로 치환하고, 상기 실리콘 원자와 상기 질소 원자가 결합된 구조를 시드(seed)로 하여 상기 실리콘 질화막을 형성한다.In the depositing of the silicon nitride film, the oxygen atom forming a bond with a silicon element inside the silicon oxide film is replaced with a nitrogen atom by using the nitrogen plasma source on the surface of the silicon oxide film, and the silicon atom and the nitrogen atom are bonded to each other. The silicon nitride film is formed using a seed as a structure.

따라서 본 발명에 의하면, LOCOS 방식의 반도체 소자의 제조 공정에서 필드 산화막을 성장시킬 때, 산화 버퍼 또는 절연막으로 사용되는 실리콘 질화막의 성장을 질소 플라즈마 소스로 처리하여 실리콘 질화막의 특성을 향상시킨다.Therefore, according to the present invention, when the field oxide film is grown in the LOCOS type semiconductor device manufacturing process, the growth of the silicon nitride film used as the oxidation buffer or the insulating film is treated with a nitrogen plasma source to improve the characteristics of the silicon nitride film.

이하 본 발명의 실시예를 첨부된 도면에 의거하여 상세히 설명한다.DETAILED DESCRIPTION Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 반도체 소자를 제조하기 위한 공정 수순을 나타낸 도면들이다.2 is a view showing a process procedure for manufacturing a semiconductor device according to the present invention.

도 2a 내지 도 2c를 참조하면, 상기 반도체 소자는 실리콘 기판(10)에 열산화하여 실리콘 산화막(12)을 성장시킨다. 이어서 질소(N2) 플라즈마 소스를 이용하여 질화 공정을 실시한다. 즉, 실리콘 산화막(12) 표면에서 질소 플라즈마 소스를 이용하여 산소 원자를 질소 원자로 치환한다. 따라서 실리콘-질소(Si-N) 구조가 실리콘 질화막 증착시 시드로 작용하여 실리콘 질화막(14)이 형성된다. 그러므로 실리콘 산화막 표면의 실리콘-질소(Si-N) 구조인 시드에 의해서 우수한 결정질의 실리콘 질화막(14)이 성장된다.2A to 2C, the semiconductor device thermally oxidizes the silicon substrate 10 to grow the silicon oxide film 12. Next, a nitriding process is performed using a nitrogen (N 2) plasma source. That is, the oxygen atom is replaced with the nitrogen atom on the surface of the silicon oxide film 12 using a nitrogen plasma source. Accordingly, the silicon nitride layer 14 is formed as a seed when the silicon nitride layer is deposited. Therefore, an excellent crystalline silicon nitride film 14 is grown by the seed having a silicon-nitrogen (Si-N) structure on the silicon oxide film surface.

또한 자외선(UV), 우주선 등의 패시베이션(passivation) 물질로서의 실리콘 질화막 증착시에도 질소 플라즈마 소스를 이용하여 실리콘 질화막(14)을 증착한다.In addition, the silicon nitride film 14 is deposited using a nitrogen plasma source when the silicon nitride film is deposited as a passivation material such as ultraviolet (UV) light or spacecraft.

상술한 바와 같이, 본 발명은 질소 프라즈마 소스를 이용하여 실리콘 질화막을 형성하는 반도체 소자의 제조 방법을 제공함으로써, 우수한 결정질의 실리콘 질화막을 성장시킨다.As described above, the present invention provides a method for producing a semiconductor device in which a silicon nitride film is formed using a nitrogen plasma source, thereby growing an excellent crystalline silicon nitride film.

현재 집적 회로에서 많이 사용되는 LOCOS 방식으로 필드 산화막을 성장할 때, 본 발명에 의하면, 산화 버퍼 또는 절연막으로 사용되는 실리콘 질화막의 결정성이 향상되고, 절연막으로서의 특성이 향상된다.According to the present invention, when the field oxide film is grown by the LOCOS method commonly used in integrated circuits, the crystallinity of the silicon nitride film used as the oxidation buffer or the insulating film is improved, and the characteristics as the insulating film are improved.

또한 포토레지스터 패터닝시, 노광되는 빛과 난반사를 일으켜 실리콘 질화막과 포토레지스터가 반응하여 현상이 잘 이루어지지 않게 되는 포토레지스터 스컴의 문제점을 감소시킨다.In addition, when photoresist patterning, light and diffuse reflection are exposed, thereby reducing the problem of photoresist scum, which is difficult to develop due to reaction between the silicon nitride film and the photoresist.

Claims (2)

반도체 기판에 실리콘 산화막을 성장하는 단계;Growing a silicon oxide film on a semiconductor substrate; 상기 실리콘 산화막의 표면에서 상기 질소 플라즈마 소스를 이용하여 상기 실리콘 산화막 내부의 실리콘 원소와 결합을 이루는 산소 원자를 질소 원자로 치환하고, 상기 실리콘 원자와 상기 질소 원자가 결합된 구조를 시드(seed)로 하여 상기 실리콘 질화막을 증착하는 단계;By using the nitrogen plasma source on the surface of the silicon oxide film, the oxygen atom which bonds with the silicon element inside the silicon oxide film is replaced with a nitrogen atom, and the structure where the silicon atom and the nitrogen atom are bonded is seeded. Depositing a silicon nitride film; 를 포함하여 반도체 소자를 형성하는 것을 특징으로 하는 반도체 소자 제조 방법.Forming a semiconductor device including a semiconductor device manufacturing method characterized in that. 삭제delete
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257582A (en) * 1984-06-04 1985-12-19 Nippon Denso Co Ltd Magnetoresistive device
KR910019266A (en) * 1990-04-26 1991-11-30 한국 전기통신공사 Improved manufacturing method of photodiode for optical communication
US5915195A (en) * 1997-11-25 1999-06-22 Advanced Micro Devices, Inc. Ion implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structure
KR19990080168A (en) * 1998-04-14 1999-11-05 김규현 Shallow Trench Fabrication Method for Semiconductor Device Isolation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257582A (en) * 1984-06-04 1985-12-19 Nippon Denso Co Ltd Magnetoresistive device
KR910019266A (en) * 1990-04-26 1991-11-30 한국 전기통신공사 Improved manufacturing method of photodiode for optical communication
US5915195A (en) * 1997-11-25 1999-06-22 Advanced Micro Devices, Inc. Ion implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structure
KR19990080168A (en) * 1998-04-14 1999-11-05 김규현 Shallow Trench Fabrication Method for Semiconductor Device Isolation

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