KR910018586A - Method for preparing rutile single crystal - Google Patents

Method for preparing rutile single crystal Download PDF

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Publication number
KR910018586A
KR910018586A KR1019910006103A KR910006103A KR910018586A KR 910018586 A KR910018586 A KR 910018586A KR 1019910006103 A KR1019910006103 A KR 1019910006103A KR 910006103 A KR910006103 A KR 910006103A KR 910018586 A KR910018586 A KR 910018586A
Authority
KR
South Korea
Prior art keywords
single crystal
rutile single
preparing rutile
crystal
preparing
Prior art date
Application number
KR1019910006103A
Other languages
Korean (ko)
Other versions
KR950001794B1 (en
Inventor
토시마사 아라히
히로유끼 호리노
히로꼬 깐노
타다토시 호소까와
Original Assignee
노사가 까쥬히꼬
치치부시멘트 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노사가 까쥬히꼬, 치치부시멘트 가부시끼가이샤 filed Critical 노사가 까쥬히꼬
Publication of KR910018586A publication Critical patent/KR910018586A/en
Application granted granted Critical
Publication of KR950001794B1 publication Critical patent/KR950001794B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.No content.

Description

루틸(RuTile)단 결정의 제조방법Method for preparing rutile single crystal

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 부유물 주변의 상세도(도면의 주요부분에 대한 설명).1 is a detailed view of the periphery (description of the main parts of the drawing).

Claims (2)

프로팅법(Floating)을 이용하여 루틸(RuTile;金紅石)단일 결정체를 제조하는 방법에 있어서, 결정성장 방향이 〔001]결정방향으로 이루어진 루틸 단일 결정의 제조방법.A method for producing rutile single crystals by floating method, wherein the crystal growth direction is in the [001] crystal direction. 제1항에 있어서, 결정성장 방향과 〔001〕결정방향 사이의 각도가 15도 이내인 루틸 단일 결정체의 제조방법.The method for producing a rutile single crystal according to claim 1, wherein an angle between the crystal growth direction and the [001] crystal direction is within 15 degrees. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910006103A 1990-04-16 1991-04-16 Production of rutile single crystal KR950001794B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2099910A JPH042683A (en) 1990-04-16 1990-04-16 Production of rutile single crystal
JP2-99910 1990-04-16
JP?2-99910 1990-04-16

Publications (2)

Publication Number Publication Date
KR910018586A true KR910018586A (en) 1991-11-30
KR950001794B1 KR950001794B1 (en) 1995-03-02

Family

ID=14259937

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910006103A KR950001794B1 (en) 1990-04-16 1991-04-16 Production of rutile single crystal

Country Status (4)

Country Link
JP (1) JPH042683A (en)
KR (1) KR950001794B1 (en)
DE (1) DE4112298A1 (en)
FR (1) FR2660940A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346109A (en) 2002-05-22 2003-12-05 Toshiba Corp Ic card and semiconductor integrated circuit device package
JP4407188B2 (en) 2003-07-23 2010-02-03 信越半導体株式会社 Silicon wafer manufacturing method and silicon wafer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL104644C (en) * 1959-09-18
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3642443A (en) * 1968-08-19 1972-02-15 Ibm Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
JPS61101495A (en) * 1984-10-24 1986-05-20 Natl Inst For Res In Inorg Mater Preparation of rutile single crystal
JPS61111997A (en) * 1984-11-05 1986-05-30 Shinkosha:Kk Production of rutile single crystal
JPS62292699A (en) * 1986-06-11 1987-12-19 Seiko Epson Corp Method for synthesizing rutile single crystal

Also Published As

Publication number Publication date
KR950001794B1 (en) 1995-03-02
JPH042683A (en) 1992-01-07
FR2660940A1 (en) 1991-10-18
DE4112298A1 (en) 1991-10-17

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