KR910008167A - 동 또는 동합금 표면의 화학적 연마를 위한 배드와 방법 - Google Patents
동 또는 동합금 표면의 화학적 연마를 위한 배드와 방법 Download PDFInfo
- Publication number
- KR910008167A KR910008167A KR1019900016848A KR900016848A KR910008167A KR 910008167 A KR910008167 A KR 910008167A KR 1019900016848 A KR1019900016848 A KR 1019900016848A KR 900016848 A KR900016848 A KR 900016848A KR 910008167 A KR910008167 A KR 910008167A
- Authority
- KR
- South Korea
- Prior art keywords
- bed
- copper
- tetraborate
- ions
- chemical polishing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Jib Cranes (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Paper (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (8)
- 과산화 수소, 인산과 사중붕산염 이온의 수용액으로 이루어짐을 특징으로 하는 동 또는 동합금 표면의 화학적 연마를 위한 배드.
- 제1항에 있어서, 사중붕산염 이온을 알카리 금속 사중붕산염 형태의 수용액으로 사용함을 특징으로 하는 배드.
- 제1항 내지 제2항에 있어서, 배드에서 3 이하의 pH값이 측정되도록 조절된 양으로 인산과 사중붕산염 이온을 함유함을 특징으로 하는 배드.
- 제3항에 있어서, 배드에서 1-2.8의 pH값이측정되도록 조절된 양으로 인산과 사중붕산염 이온을 함유함을 특징으로 하는 배드.
- 제1항 내지 제4항중 어느 한 항에 있어서,리터당 1-5몰 양의 과산화수소,리터당 0.01-1몰 양의 인산,리터당 0.01-0.5몰 양의 사중붕산염 이온으로 이루어짐을 특징으로 하는 배드.
- 표면을 제1항-제5항중 어느 한항에 따른 화학적 연마 배드와 접촉시킴을 특징으로 하는 동 또는 동합금 표면의 연마방법.
- 제6항에 있어서, 표면을 충분한 시간 동안 배드와 접촉시켜서 5-30미크론의 깊이로 금속을 부식시킴을 특징으로 하는 연마방법.
- 제6항 내지 제7항에 있어서, 표면을 제1항 내지 제5항에 따른 첫번째 화학적 연마 배드와 계속하여 접촉시킨 다음, 과산화수소, 염화물이온과 인산, 인산염 이온과 인산 수소 이온의 혼합물의 수용액으로 이루어진 두번째 화학적 연마 배드와 접촉시킴을 특징으로 하는 연마 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE08901150 | 1989-10-24 | ||
BE8901150A BE1003761A3 (fr) | 1989-10-24 | 1989-10-24 | Bains et procede pour le polissage chimique de surfaces en cuivre ou en alliage de cuivre. |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910008167A true KR910008167A (ko) | 1991-05-30 |
Family
ID=3884370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900016848A KR910008167A (ko) | 1989-10-24 | 1990-10-22 | 동 또는 동합금 표면의 화학적 연마를 위한 배드와 방법 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5098517A (ko) |
EP (1) | EP0425012B1 (ko) |
JP (1) | JPH03193886A (ko) |
KR (1) | KR910008167A (ko) |
AT (1) | ATE88223T1 (ko) |
BE (1) | BE1003761A3 (ko) |
CA (1) | CA2028195A1 (ko) |
DE (1) | DE69001349D1 (ko) |
FI (1) | FI905229A0 (ko) |
NO (1) | NO904579L (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242542A (en) * | 1992-08-17 | 1993-09-07 | Alain Masse | Solution and method for removing zinc from the surface of a galvanized metal |
US5279707A (en) * | 1992-10-23 | 1994-01-18 | Time Savers | Die discoloration remover solution and method |
ATE195560T1 (de) * | 1993-01-11 | 2000-09-15 | Macdermid Inc | Phosphatisierungsverfahren, insbesondere für die herstellung von leiterplatten und verwendung organischer rückstände |
US5630950A (en) * | 1993-07-09 | 1997-05-20 | Enthone-Omi, Inc. | Copper brightening process and bath |
DE4402788A1 (de) * | 1994-01-31 | 1995-08-10 | Emil Krechen Industrievertretu | Verfahren zum Abtragen von Metallen |
US5916453A (en) | 1996-09-20 | 1999-06-29 | Fujitsu Limited | Methods of planarizing structures on wafers and substrates by polishing |
US6858097B2 (en) * | 1999-12-30 | 2005-02-22 | Henkel Kommanditgesellschaft Auf Aktien (Henkel Kgaa) | Brightening/passivating metal surfaces without hazard from emissions of oxides of nitrogen |
US6368969B1 (en) | 2000-06-30 | 2002-04-09 | International Business Machines Corporation | Chemical-mechanical polishing methods |
US20100062693A1 (en) * | 2008-09-05 | 2010-03-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Two step method and apparatus for polishing metal and other films in semiconductor manufacturing |
JP6043148B2 (ja) * | 2012-10-25 | 2016-12-14 | ユニチカ株式会社 | 銅エッチング液 |
CN103849876B (zh) * | 2012-12-03 | 2016-04-06 | 浙江伟星实业发展股份有限公司 | 一种化学抛光方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE284558C (ko) * | 1900-01-01 | |||
BE652530A (ko) * | 1963-09-02 | |||
JPS512975A (ja) * | 1974-06-28 | 1976-01-12 | Hitachi Ltd | Etsuchingueki |
GB1449525A (en) * | 1974-08-21 | 1976-09-15 | Tokai Electro Chemical Co | Method of stabilizing acid aqueous solutions of hydrogen peroxide |
IT1083401B (it) * | 1977-05-27 | 1985-05-21 | Alfachimici Spa | Soluzione acida per l'attacco selettivo del rame |
SU1211338A1 (ru) * | 1984-07-18 | 1986-02-15 | Ордена Трудового Красного Знамени Институт Органической И Физической Химии Им.А.Е.Арбузова | Раствор дл химического полировани меди и ее сплавов |
FR2621052A1 (fr) * | 1987-09-25 | 1989-03-31 | Solvay | Bains et procede pour le polissage chimique de surfaces en cuivre ou en alliage de cuivre |
-
1989
- 1989-10-24 BE BE8901150A patent/BE1003761A3/fr not_active IP Right Cessation
-
1990
- 1990-10-15 AT AT90202734T patent/ATE88223T1/de not_active IP Right Cessation
- 1990-10-15 DE DE9090202734T patent/DE69001349D1/de not_active Expired - Lifetime
- 1990-10-15 EP EP90202734A patent/EP0425012B1/fr not_active Expired - Lifetime
- 1990-10-22 CA CA002028195A patent/CA2028195A1/fr not_active Abandoned
- 1990-10-22 KR KR1019900016848A patent/KR910008167A/ko not_active Application Discontinuation
- 1990-10-23 NO NO90904579A patent/NO904579L/no unknown
- 1990-10-24 JP JP2284533A patent/JPH03193886A/ja active Pending
- 1990-10-24 FI FI905229A patent/FI905229A0/fi not_active Application Discontinuation
- 1990-10-24 US US07/602,617 patent/US5098517A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0425012A1 (fr) | 1991-05-02 |
NO904579D0 (no) | 1990-10-23 |
JPH03193886A (ja) | 1991-08-23 |
ATE88223T1 (de) | 1993-04-15 |
US5098517A (en) | 1992-03-24 |
NO904579L (no) | 1991-04-25 |
CA2028195A1 (fr) | 1991-04-25 |
FI905229A0 (fi) | 1990-10-24 |
EP0425012B1 (fr) | 1993-04-14 |
BE1003761A3 (fr) | 1992-06-09 |
DE69001349D1 (de) | 1993-05-19 |
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Legal Events
Date | Code | Title | Description |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |