KR910003772A - Coating method and device - Google Patents

Coating method and device Download PDF

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Publication number
KR910003772A
KR910003772A KR1019900010255A KR900010255A KR910003772A KR 910003772 A KR910003772 A KR 910003772A KR 1019900010255 A KR1019900010255 A KR 1019900010255A KR 900010255 A KR900010255 A KR 900010255A KR 910003772 A KR910003772 A KR 910003772A
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KR
South Korea
Prior art keywords
pressure
chamber
flow rate
coating method
coating liquid
Prior art date
Application number
KR1019900010255A
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Korean (ko)
Other versions
KR0164604B1 (en
Inventor
키미하루 마쓰무라
히로시 사카이
Original Assignee
고다까 토시오
도오교오 에레구토론 가부시끼가이샤
다카시마 히로시
도오교오 에레구토론 큐우슈우 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 고다까 토시오, 도오교오 에레구토론 가부시끼가이샤, 다카시마 히로시, 도오교오 에레구토론 큐우슈우 가부시끼가이샤 filed Critical 고다까 토시오
Publication of KR910003772A publication Critical patent/KR910003772A/en
Application granted granted Critical
Publication of KR0164604B1 publication Critical patent/KR0164604B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/47—Organic layers, e.g. photoresist

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음.No content.

Description

도포방법 및 장치Coating method and device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는, 본 발명의 1실시예의 도포장치를 나타내는 설명도,1 is an explanatory diagram showing a coating apparatus of one embodiment of the present invention;

제2도는, 용매의 증기압과 온도와의 관계를 나타내는 특성도.2 is a characteristic diagram showing the relationship between the vapor pressure of a solvent and temperature.

Claims (6)

밀폐식의 쳄버(11) 내에 수용한 피처리체(반도체웨이퍼) (16)를 소정의 회전수로 회전시키는 공정과, 상기 쳄버(11)내의 압력을 상기 피처리체(16)에 도포하는 도포액에 혼입한 용매의 증기압보다 고압으로 설정하는 공정과, 상기 피처리체(16)의 표면에 상기 도포액을 공급하여 도포하는 공정을 구비하는 도포방법.The process of rotating the to-be-processed object (semiconductor wafer) 16 accommodated in the sealed chamber 11 by predetermined rotation speed, and the coating liquid which apply | coats the pressure in the said chamber 11 to the to-be-processed object 16 to And a step of setting the coating liquid at a higher pressure than the vapor pressure of the mixed solvent, and supplying and applying the coating liquid to the surface of the object to be treated (16). 제1항에 있어서, 쳄버(11)내의 압력을 설정은, 피처리체(16)의 표면에 도포액을 공급하면서 이 쳄버(11)내의 압력을 연속적으로 측정하면서 제어하는 것인 도포방법.The coating method according to claim 1, wherein the setting of the pressure in the chamber (11) is controlled while continuously measuring the pressure in the chamber (11) while supplying a coating liquid to the surface of the workpiece (16). 제1항에 있어서, 쳄버(11) 내의 압력의 설정은, 피처리체(16)의 표면근방영역의 분위기 압력의 범위를 통상 압력보다 고압으로 유지하는 것인 도포방법.The coating method according to claim 1, wherein the setting of the pressure in the chamber (11) maintains the range of the atmospheric pressure in the near-surface region of the workpiece (16) at a higher pressure than the normal pressure. 제1항에 있어서, 도포액은, 레지스트액 성분과 용매로 이루어지는 것인 도포방법.The coating method according to claim 1, wherein the coating liquid consists of a resist liquid component and a solvent. 제1항에 있어서, 용매는, 에틸세로솔브아세테이트(ECA)인 도포방법.The coating method according to claim 1, wherein the solvent is ethyl vertical solve acetate (ECA). 피처리체(16)의 얹어놓는부를 가지며 밀폐식의 쳄버(11)내에 회전이 자유롭게 형성된 스핀척(13)과, 상기 얹어놓는부에 노즐(22b)를 대향하도록 하여 상기 쳄버(11)에 형성된 도포액 공급수단과, 상기 쳄버(11)내에 소정의 고압가스를 공급하는 고압가스 공급수단과, 상기 쳄버(11)내의 압력을 측정하는 압력계(18)와, 상기 쳄버(11)에 부착된 배기수단과, 이 배기수단에 부착된 배기유량 조절수단(유량제어밸브) (16a)과, 상기 압력계(18)로 부터의 신호에 따라서 이 배기유량 조절수단(16a)에 의한 배기유량을 제어하는 압력제어기(19)를 구비하는 도포장치.Application | coating formed in the said chamber 11 by making the spin chuck 13 which has the mounting part of the to-be-processed object 16 freely rotated in the sealed chamber 11, and the nozzle 22b facing the said mounting part. Liquid supply means, high pressure gas supply means for supplying a predetermined high pressure gas into the chamber 11, a pressure gauge 18 for measuring the pressure in the chamber 11, and exhaust means attached to the chamber 11 And a pressure controller for controlling the exhaust flow rate by the exhaust flow rate adjusting means 16a in accordance with a signal from the pressure gauge 18 and the exhaust flow rate adjusting means (flow rate control valve) 16a attached to the exhaust means. An applicator provided with 19. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900010255A 1989-07-06 1990-07-06 Coating method and apparatus thereof KR0164604B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP175267 1989-07-06
JP1175267A JP2764069B2 (en) 1989-07-06 1989-07-06 Application method
JP1-175267 1989-07-06

Publications (2)

Publication Number Publication Date
KR910003772A true KR910003772A (en) 1991-02-28
KR0164604B1 KR0164604B1 (en) 1999-02-01

Family

ID=15993163

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010255A KR0164604B1 (en) 1989-07-06 1990-07-06 Coating method and apparatus thereof

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Country Link
JP (1) JP2764069B2 (en)
KR (1) KR0164604B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100578612B1 (en) * 1997-10-31 2006-11-30 동경 엘렉트론 주식회사 Application method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3385925B2 (en) * 1997-08-05 2003-03-10 株式会社日立製作所 Electronic circuit manufacturing method
JP3587776B2 (en) * 2000-10-10 2004-11-10 東京エレクトロン株式会社 Coating device and coating method
US6729041B2 (en) * 2000-12-28 2004-05-04 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
KR100980122B1 (en) * 2002-09-20 2010-09-03 도쿄엘렉트론가부시키가이샤 Substrate processingapparatus, substrate processing method, coating method and coating apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176572A (en) * 1986-01-31 1987-08-03 Toshiba Corp Apparatus for forming film
JPS6324621A (en) * 1986-07-16 1988-02-02 Nec Corp Coating applicator of photoresist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100578612B1 (en) * 1997-10-31 2006-11-30 동경 엘렉트론 주식회사 Application method

Also Published As

Publication number Publication date
JP2764069B2 (en) 1998-06-11
KR0164604B1 (en) 1999-02-01
JPH0338821A (en) 1991-02-19

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