KR910001941A - Morse FET manufacturing method - Google Patents

Morse FET manufacturing method Download PDF

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Publication number
KR910001941A
KR910001941A KR1019890009316A KR890009316A KR910001941A KR 910001941 A KR910001941 A KR 910001941A KR 1019890009316 A KR1019890009316 A KR 1019890009316A KR 890009316 A KR890009316 A KR 890009316A KR 910001941 A KR910001941 A KR 910001941A
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KR
South Korea
Prior art keywords
deposition
forming
gate
oxide film
fet manufacturing
Prior art date
Application number
KR1019890009316A
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Korean (ko)
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KR0142875B1 (en
Inventor
한석우
Original Assignee
이헌조
주식회사 금성사
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Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019890009316A priority Critical patent/KR0142875B1/en
Publication of KR910001941A publication Critical patent/KR910001941A/en
Application granted granted Critical
Publication of KR0142875B1 publication Critical patent/KR0142875B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음No content

Description

모오스 FET 제조방법Morse FET manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본발명에 따른 모오스 FET 제조 공정도.2 is a process diagram of MOS FET manufacturing according to the present invention.

Claims (1)

P형 기판(p-sub)위에서 필드산화막(1)을 형성한후 n+폴리 디포지션(A)하고 SiO2디포지션(B)하는 공정과, 에칭하여 게이트가 될부분(C)을 형성하는 공정과, 상기 공정후 열산화막 처리하고 그위에 SiO2디포지션(D)한다음 문턱전압(VT)을 인가하는 공정과, 상기 공정후 RIE 산화물을 처리한 후 게이트 산화막(E)을 형성하는 공정과, n+폴리 디포지션 하여 게이트(G)를 형성하는 공정을 거쳐 모오스 FET를 제조하는 것을 특징으로 하는 모오스제조방법.Forming a field oxide film 1 on a p-sub substrate (p-sub) and then n + poly deposition (A) and SiO 2 deposition (B), and etching to form a portion (C) to be a gate A step of treating the thermal oxide film after the step, applying a SiO 2 deposition (D) thereon, and applying a threshold voltage (V T ); and forming a gate oxide film (E) after treating the RIE oxide after the step. A method for producing a MOS FET comprising the step of forming a gate G by performing a step and n + poly deposition. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890009316A 1989-06-30 1989-06-30 Fabrication method of mosfet KR0142875B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890009316A KR0142875B1 (en) 1989-06-30 1989-06-30 Fabrication method of mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890009316A KR0142875B1 (en) 1989-06-30 1989-06-30 Fabrication method of mosfet

Publications (2)

Publication Number Publication Date
KR910001941A true KR910001941A (en) 1991-01-31
KR0142875B1 KR0142875B1 (en) 1998-08-17

Family

ID=19287712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890009316A KR0142875B1 (en) 1989-06-30 1989-06-30 Fabrication method of mosfet

Country Status (1)

Country Link
KR (1) KR0142875B1 (en)

Also Published As

Publication number Publication date
KR0142875B1 (en) 1998-08-17

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