KR940001346A - Method of manufacturing semiconductor device separator - Google Patents

Method of manufacturing semiconductor device separator Download PDF

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Publication number
KR940001346A
KR940001346A KR1019920009729A KR920009729A KR940001346A KR 940001346 A KR940001346 A KR 940001346A KR 1019920009729 A KR1019920009729 A KR 1019920009729A KR 920009729 A KR920009729 A KR 920009729A KR 940001346 A KR940001346 A KR 940001346A
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KR
South Korea
Prior art keywords
film
pad
device isolation
polysilicon film
pad polysilicon
Prior art date
Application number
KR1019920009729A
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Korean (ko)
Inventor
김대영
손용선
곽흥식
윤희구
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920009729A priority Critical patent/KR940001346A/en
Publication of KR940001346A publication Critical patent/KR940001346A/en

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  • Local Oxidation Of Silicon (AREA)

Abstract

본 발명은 소자분리막 제조방법에 관한 것으로, 반도체 기판(5) 상에 패드산화막(1)을 형성하는 제1공정, 상기 제1공정후에 패드 폴리실리콘막(2)을 증착하고 이 패드 폴리실리콘막(2)에 질소(N2 +)를 주입하는 제2공정, 상기 제2공정후에 질화막(3)을 증착하고 형성하고자 하는 소자분리막(4)을 감광물질(6)로 마스크패턴하여 상기 질화막(3)을 식각한 후에 상기 패드 폴리실리콘막(2) 일부를 식각하는 제3공정 및 상기 제3공정후에 산소분위기에서 소자분리 산화막(4)을 형성하고 상기 질화막(3), 패드 폴리실리콘막(2), 패드산화막(1)을 차례로 식각하는 제4공정을 구비함을 특징으로 하는 소자분리막 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation film manufacturing method, wherein a pad polysilicon film (2) is deposited after a first step of forming a pad oxide film (1) on a semiconductor substrate (5). In the second step of injecting nitrogen (N 2 + ) into (2), after the second step, the nitride film 3 is deposited and the device isolation film 4 to be formed is mask patterned with a photosensitive material 6 to form the nitride film ( After etching 3), a part of the pad polysilicon film 2 is etched and a device isolation oxide film 4 is formed in an oxygen atmosphere after the third process, and the nitride film 3 and the pad polysilicon film ( 2) and a fourth process for sequentially etching the pad oxide film (1).

Description

반도체 소자분리막 제조방법Method of manufacturing semiconductor device separator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 소자분리막.1 is a device isolation film according to the present invention.

Claims (3)

소자분리막 제조방법에 있어서, 반도체 기판(5) 상에 패드산화막(1)을 형성하는 제1공정, 상기 제1공정후에 패드 폴리 실리콘막(2)을 증착하고 이 패드 폴리실리콘막(2)에 질소 (N2 +)를 주입하는 제2공정, 상기 제2공정후에 질화막(3)을 증착하고 형성하고자 하는 소자분리막(4)을 감광물질(6)로 마스크패턴하여 상기 질화막(3)을 식각한 후에 상기 패드 폴리실리콘막(2) 일부를 식각하는 제3공정, 및 상기 제3공정후에 산소분위기에서 소자분리 산화막(4)을 형성하고 상기 질화막(3), 패드 폴리실리콘막(2), 패드산화막(1)을 차례로 식각하는 제4공정을 구비함을 특징으로 하는 소자분리막 제조방법.In the device isolation film manufacturing method, a first step of forming a pad oxide film 1 on a semiconductor substrate 5, and after the first step, a pad polysilicon film 2 is deposited and applied to the pad polysilicon film 2. In the second step of injecting nitrogen (N 2 + ), after the second step, the nitride film 3 is deposited and the device isolation film 4 to be formed is mask patterned with a photosensitive material 6 to etch the nitride film 3. A third process of etching a part of the pad polysilicon film 2, and after the third process, an element isolation oxide film 4 is formed in an oxygen atmosphere, and the nitride film 3, the pad polysilicon film 2, And a fourth step of sequentially etching the pad oxide film (1). 제1항에 있어서, 상기 질소(N2 +. N+) 주입량의 농도가 ×1013cm-3이상인 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the concentration of the nitrogen (N 2 + . N + ) injection amount is at least 10 × 10 13 cm −3 . 제1항에 있어서, 상기 패드 폴리실리콘막(2)의 증착온도가 700℃ 이하인 것을 특징으로 하는 소자분리막 제조방법.The method of claim 1, wherein the deposition temperature of the pad polysilicon film (2) is 700 ° C. or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920009729A 1992-06-05 1992-06-05 Method of manufacturing semiconductor device separator KR940001346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920009729A KR940001346A (en) 1992-06-05 1992-06-05 Method of manufacturing semiconductor device separator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920009729A KR940001346A (en) 1992-06-05 1992-06-05 Method of manufacturing semiconductor device separator

Publications (1)

Publication Number Publication Date
KR940001346A true KR940001346A (en) 1994-01-11

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Application Number Title Priority Date Filing Date
KR1019920009729A KR940001346A (en) 1992-06-05 1992-06-05 Method of manufacturing semiconductor device separator

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100985385B1 (en) * 2008-07-21 2010-10-08 한국생산기술연구원 The Surface reforming method of magnesium or magnesium alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100985385B1 (en) * 2008-07-21 2010-10-08 한국생산기술연구원 The Surface reforming method of magnesium or magnesium alloy

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