KR940001346A - Method of manufacturing semiconductor device separator - Google Patents
Method of manufacturing semiconductor device separator Download PDFInfo
- Publication number
- KR940001346A KR940001346A KR1019920009729A KR920009729A KR940001346A KR 940001346 A KR940001346 A KR 940001346A KR 1019920009729 A KR1019920009729 A KR 1019920009729A KR 920009729 A KR920009729 A KR 920009729A KR 940001346 A KR940001346 A KR 940001346A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- pad
- device isolation
- polysilicon film
- pad polysilicon
- Prior art date
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- Local Oxidation Of Silicon (AREA)
Abstract
본 발명은 소자분리막 제조방법에 관한 것으로, 반도체 기판(5) 상에 패드산화막(1)을 형성하는 제1공정, 상기 제1공정후에 패드 폴리실리콘막(2)을 증착하고 이 패드 폴리실리콘막(2)에 질소(N2 +)를 주입하는 제2공정, 상기 제2공정후에 질화막(3)을 증착하고 형성하고자 하는 소자분리막(4)을 감광물질(6)로 마스크패턴하여 상기 질화막(3)을 식각한 후에 상기 패드 폴리실리콘막(2) 일부를 식각하는 제3공정 및 상기 제3공정후에 산소분위기에서 소자분리 산화막(4)을 형성하고 상기 질화막(3), 패드 폴리실리콘막(2), 패드산화막(1)을 차례로 식각하는 제4공정을 구비함을 특징으로 하는 소자분리막 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation film manufacturing method, wherein a pad polysilicon film (2) is deposited after a first step of forming a pad oxide film (1) on a semiconductor substrate (5). In the second step of injecting nitrogen (N 2 + ) into (2), after the second step, the nitride film 3 is deposited and the device isolation film 4 to be formed is mask patterned with a photosensitive material 6 to form the nitride film ( After etching 3), a part of the pad polysilicon film 2 is etched and a device isolation oxide film 4 is formed in an oxygen atmosphere after the third process, and the nitride film 3 and the pad polysilicon film ( 2) and a fourth process for sequentially etching the pad oxide film (1).
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따른 소자분리막.1 is a device isolation film according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920009729A KR940001346A (en) | 1992-06-05 | 1992-06-05 | Method of manufacturing semiconductor device separator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920009729A KR940001346A (en) | 1992-06-05 | 1992-06-05 | Method of manufacturing semiconductor device separator |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940001346A true KR940001346A (en) | 1994-01-11 |
Family
ID=67296642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920009729A KR940001346A (en) | 1992-06-05 | 1992-06-05 | Method of manufacturing semiconductor device separator |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940001346A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100985385B1 (en) * | 2008-07-21 | 2010-10-08 | 한국생산기술연구원 | The Surface reforming method of magnesium or magnesium alloy |
-
1992
- 1992-06-05 KR KR1019920009729A patent/KR940001346A/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100985385B1 (en) * | 2008-07-21 | 2010-10-08 | 한국생산기술연구원 | The Surface reforming method of magnesium or magnesium alloy |
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