KR900011015A - 반도체 장치의 제조방법 - Google Patents
반도체 장치의 제조방법Info
- Publication number
- KR900011015A KR900011015A KR1019890017036A KR890017036A KR900011015A KR 900011015 A KR900011015 A KR 900011015A KR 1019890017036 A KR1019890017036 A KR 1019890017036A KR 890017036 A KR890017036 A KR 890017036A KR 900011015 A KR900011015 A KR 900011015A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/038—Diffusions-staged
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-317711 | 1988-12-16 | ||
JP31771188 | 1988-12-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900011015A true KR900011015A (ko) | 1990-07-11 |
KR930003555B1 KR930003555B1 (ko) | 1993-05-06 |
Family
ID=18091180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890017036A KR930003555B1 (ko) | 1988-12-16 | 1989-11-23 | 반도체 장치의 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4963509A (ko) |
KR (1) | KR930003555B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5130269A (en) * | 1988-04-27 | 1992-07-14 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same |
US5368880A (en) * | 1989-12-06 | 1994-11-29 | Westinghouse Electric Corporation | Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire |
DE4236300A1 (de) * | 1992-10-28 | 1994-05-11 | Telefunken Microelectron | Verfahren zur Herstellung von Halbleiterbauelementen mit geringer Schaltzeit |
JP4653273B2 (ja) * | 1999-11-05 | 2011-03-16 | 富士電機システムズ株式会社 | 半導体装置、および、その製造方法 |
US7092609B2 (en) * | 2002-01-31 | 2006-08-15 | Intel Corporation | Method to realize fast silicon-on-insulator (SOI) optical device |
JP6042658B2 (ja) * | 2011-09-07 | 2016-12-14 | トヨタ自動車株式会社 | SiC半導体素子の製造方法 |
WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL252132A (ko) * | 1959-06-30 | |||
US3473976A (en) * | 1966-03-31 | 1969-10-21 | Ibm | Carrier lifetime killer doping process for semiconductor structures and the product formed thereby |
US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
US3645808A (en) * | 1967-07-31 | 1972-02-29 | Hitachi Ltd | Method for fabricating a semiconductor-integrated circuit |
US3864174A (en) * | 1973-01-22 | 1975-02-04 | Nobuyuki Akiyama | Method for manufacturing semiconductor device |
US3941625A (en) * | 1973-10-11 | 1976-03-02 | General Electric Company | Glass passivated gold diffused SCR pellet and method for making |
US3943013A (en) * | 1973-10-11 | 1976-03-09 | General Electric Company | Triac with gold diffused boundary |
JPS5455372A (en) * | 1977-10-12 | 1979-05-02 | Nec Corp | Production of semiconductor device |
-
1989
- 1989-11-23 KR KR1019890017036A patent/KR930003555B1/ko not_active IP Right Cessation
- 1989-12-12 US US07/450,223 patent/US4963509A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR930003555B1 (ko) | 1993-05-06 |
US4963509A (en) | 1990-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19980410 Year of fee payment: 6 |
|
LAPS | Lapse due to unpaid annual fee |