KR900004730B1 - 반도체 기억장치(半導體記憶裝置) 및 그 제조방법 - Google Patents

반도체 기억장치(半導體記憶裝置) 및 그 제조방법 Download PDF

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Publication number
KR900004730B1
KR900004730B1 KR8204010A KR820004010A KR900004730B1 KR 900004730 B1 KR900004730 B1 KR 900004730B1 KR 8204010 A KR8204010 A KR 8204010A KR 820004010 A KR820004010 A KR 820004010A KR 900004730 B1 KR900004730 B1 KR 900004730B1
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KR
South Korea
Prior art keywords
region
semiconductor
voltage
type
gate
Prior art date
Application number
KR8204010A
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English (en)
Korean (ko)
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KR840001780A (ko
Inventor
가츠히로 고모리
사도루 이도오
사도시 메구로
도시마사 기하라
하루미 와끼모도
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840001780A publication Critical patent/KR840001780A/ko
Application granted granted Critical
Publication of KR900004730B1 publication Critical patent/KR900004730B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR8204010A 1981-09-25 1982-09-04 반도체 기억장치(半導體記憶裝置) 및 그 제조방법 KR900004730B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56150604A JPS5852871A (ja) 1981-09-25 1981-09-25 半導体記憶装置
JP56-150604 1981-09-25

Publications (2)

Publication Number Publication Date
KR840001780A KR840001780A (ko) 1984-05-16
KR900004730B1 true KR900004730B1 (ko) 1990-07-05

Family

ID=15500510

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8204010A KR900004730B1 (ko) 1981-09-25 1982-09-04 반도체 기억장치(半導體記憶裝置) 및 그 제조방법

Country Status (8)

Country Link
JP (1) JPS5852871A (it)
KR (1) KR900004730B1 (it)
DE (1) DE3235411A1 (it)
FR (1) FR2513793B1 (it)
GB (1) GB2109994B (it)
HK (1) HK70587A (it)
IT (1) IT1155067B (it)
SG (1) SG37387G (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
IT1213249B (it) * 1984-11-26 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
FR2583920B1 (fr) * 1985-06-21 1987-07-31 Commissariat Energie Atomique Procede de fabrication d'un circuit integre et notamment d'une memoire eprom comportant deux composants distincts isoles electriquement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device

Also Published As

Publication number Publication date
KR840001780A (ko) 1984-05-16
IT1155067B (it) 1987-01-21
SG37387G (en) 1987-07-24
GB2109994A (en) 1983-06-08
JPS5852871A (ja) 1983-03-29
IT8223344A0 (it) 1982-09-20
GB2109994B (en) 1986-02-12
HK70587A (en) 1987-10-09
DE3235411A1 (de) 1983-04-14
FR2513793B1 (fr) 1989-02-17
FR2513793A1 (fr) 1983-04-01

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