IT1155067B - Dispositivo di memoria a semiconduttori - Google Patents

Dispositivo di memoria a semiconduttori

Info

Publication number: IT1155067B
Authority: IT; Italy
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 1981-09-25

Application number

IT23344/82A

Other languages

English (en)

Other versions

IT8223344A0 (it

Inventor

Komori Kazuhiro

Ito Satoru

Meguro Satoshi

Kihara Toshimasa

Wakimoto Harumi

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-25

Filing date

1982-09-20

Publication date

1987-01-21

1982-09-20 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1982-09-20 Publication of IT8223344A0 publication Critical patent/IT8223344A0/it

1987-01-21 Application granted granted Critical

1987-01-21 Publication of IT1155067B publication Critical patent/IT1155067B/it

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Semiconductor Memories (AREA)
Non-Volatile Memory (AREA)

IT23344/82A 1981-09-25 1982-09-20 Dispositivo di memoria a semiconduttori IT1155067B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56150604A JPS5852871A (ja)	1981-09-25	1981-09-25	半導体記憶装置

Publications (2)

Publication Number	Publication Date
IT8223344A0 IT8223344A0 (it)	1982-09-20
IT1155067B true IT1155067B (it)	1987-01-21

Family

ID=15500510

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT23344/82A IT1155067B (it)	1981-09-25	1982-09-20	Dispositivo di memoria a semiconduttori

Country Status (8)

Country	Link
JP (1)	JPS5852871A (it)
KR (1)	KR900004730B1 (it)
DE (1)	DE3235411A1 (it)
FR (1)	FR2513793B1 (it)
GB (1)	GB2109994B (it)
HK (1)	HK70587A (it)
IT (1)	IT1155067B (it)
SG (1)	SG37387G (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4516313A (en) *	1983-05-27	1985-05-14	Ncr Corporation	Unified CMOS/SNOS semiconductor fabrication process
IT1213249B (it) *	1984-11-26	1989-12-14	Ates Componenti Elettron	Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
FR2583920B1 (fr) *	1985-06-21	1987-07-31	Commissariat Energie Atomique	Procede de fabrication d'un circuit integre et notamment d'une memoire eprom comportant deux composants distincts isoles electriquement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3984822A (en) *	1974-12-30	1976-10-05	Intel Corporation	Double polycrystalline silicon gate memory device

1981
- 1981-09-25 JP JP56150604A patent/JPS5852871A/ja active Pending
1982
- 1982-09-04 KR KR8204010A patent/KR900004730B1/ko active
- 1982-09-20 IT IT23344/82A patent/IT1155067B/it active
- 1982-09-21 FR FR828215874A patent/FR2513793B1/fr not_active Expired
- 1982-09-22 GB GB08227061A patent/GB2109994B/en not_active Expired
- 1982-09-24 DE DE19823235411 patent/DE3235411A1/de not_active Withdrawn
1987
- 1987-04-23 SG SG373/87A patent/SG37387G/en unknown
- 1987-10-01 HK HK705/87A patent/HK70587A/xx unknown

Also Published As

Publication number	Publication date
KR840001780A (ko)	1984-05-16
SG37387G (en)	1987-07-24
GB2109994A (en)	1983-06-08
JPS5852871A (ja)	1983-03-29
IT8223344A0 (it)	1982-09-20
GB2109994B (en)	1986-02-12
HK70587A (en)	1987-10-09
DE3235411A1 (de)	1983-04-14
KR900004730B1 (ko)	1990-07-05
FR2513793B1 (fr)	1989-02-17
FR2513793A1 (fr)	1983-04-01

Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19950927

Publication	Publication Date	Title
IT1151252B (it)	1986-12-17	Dispositivo di memoria a semiconduttori
IT1161895B (it)	1987-03-18	Memoria a semiconduttori
FR2506057B1 (fr)	1986-12-19	Memoire a semi-conducteurs
DE3277659D1 (en)	1987-12-17	Semiconductor memory device
KR860005441A (ko)	1986-07-23	반도체기억장치
KR860004478A (ko)	1986-06-23	반도체 메모리 장치
GB2097157B (en)	1985-02-20	Semiconductor memory device
DE3271769D1 (en)	1986-07-24	Semiconductor memory device
KR860003606A (ko)	1986-05-28	반도체 메모리 장치
IT1168281B (it)	1987-05-20	Dispositivo di memoria a semiconduttori
GB2107114B (en)	1986-02-12	Semiconductor memory device
DE3486418D1 (de)	1996-02-08	Halbleiterspeicheranordnung
KR850008756A (ko)	1985-12-21	반도체 메모리 장치
DE3272052D1 (en)	1986-08-21	Semiconductor memory device
DE3278523D1 (en)	1988-06-23	A semiconductor memory device
DE3275609D1 (en)	1987-04-09	Semiconductor memory device
DE3267623D1 (en)	1986-01-02	Semiconductor memory device
IT1149658B (it)	1986-12-03	Dispositivo a semiconduttori
DE3278867D1 (en)	1988-09-08	Semiconductor memory device
DE3278894D1 (en)	1988-09-15	Semiconductor memory device
IT1176383B (it)	1987-08-18	Dispositivo semiconduttore sensibile a radiazioni
IT1155067B (it)	1987-01-21	Dispositivo di memoria a semiconduttori
DE3271733D1 (en)	1986-07-24	Semiconductor memory device
IE812571L (en)	1982-05-04	Semiconductor memory device
IE811699L (en)	1982-01-28	Semiconductor memory device