KR890700548A - Titanium Diboride / Boron Carbide Compositions with High Hardness and Toughness - Google Patents

Titanium Diboride / Boron Carbide Compositions with High Hardness and Toughness

Info

Publication number
KR890700548A
KR890700548A KR1019880701763A KR880701763A KR890700548A KR 890700548 A KR890700548 A KR 890700548A KR 1019880701763 A KR1019880701763 A KR 1019880701763A KR 880701763 A KR880701763 A KR 880701763A KR 890700548 A KR890700548 A KR 890700548A
Authority
KR
South Korea
Prior art keywords
boron
composition
titanium
boron carbide
less
Prior art date
Application number
KR1019880701763A
Other languages
Korean (ko)
Other versions
KR910001933B1 (en
Inventor
케이.누드센 아네
라파니엘로 윌리암
Original Assignee
리차드 지.워터맨
더 다우 케미칼 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 리차드 지.워터맨, 더 다우 케미칼 캄파니 filed Critical 리차드 지.워터맨
Publication of KR890700548A publication Critical patent/KR890700548A/en
Application granted granted Critical
Publication of KR910001933B1 publication Critical patent/KR910001933B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/121—Coherent waves, e.g. laser beams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/991—Boron carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/563—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on boron carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
    • C04B35/58064—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides
    • C04B35/58071—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on refractory borides based on titanium borides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/90—Other properties not specified above

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Composite Materials (AREA)
  • Ceramic Products (AREA)

Abstract

내용 없음.No content.

Description

고경도 및 인성을 갖는 이붕소화 티탄/탄화붕소 조성물Titanium Diboride / Boron Carbide Compositions with High Hardness and Toughness

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 분말 조성물의 샘플로 부터 수득된 X-선 분말 회절패턴이다.1 is an X-ray powder diffraction pattern obtained from a sample of the powder composition of the present invention.

Claims (30)

필수적으로 탄화 붕소 1 내지 99중량% 이상 및 이붕소화 티탄 1 내지 99중량% 미만의 균질 혼합물을 함유하고, 이때 혼합물은 0.5㎛ 미만의 평균 입자 직경을 가지며, 입자는 전자 프로우브(probe) 분석 X-선도가 실질적으로 탄화붕소 및 이붕소화 티탄의 개별농도에 대하여 모두 직경 0.5㎛ 이하를 나타낼 정도로 균일하게 분산된 분말 조성물.Essentially contains a homogeneous mixture of at least 1 to 99% by weight of boron carbide and less than 1 to 99% by weight of titanium diboride, wherein the mixture has an average particle diameter of less than 0.5 μm and the particles have an electron probe analysis X. -A powder composition uniformly dispersed such that the diagram shows substantially 0.5 μm or less in diameter with respect to the individual concentrations of boron carbide and titanium diboride. 제1항에 있어서, 적어도 일부의 탄화붕소가 붕소-고함유 탄화붕소인 조성물.The composition of claim 1, wherein at least some boron carbide is boron-rich boron carbide. 제1항에 있어서, H3BO3가 5중량% 미만의 농도로 존재하는 조성물.The composition of claim 1, wherein H 3 BO 3 is present at a concentration of less than 5% by weight. 제1항에 있어서, 분말이 벌크 X-선 분말 회절분석 결과 주로 무정형이 조성물.The composition of claim 1, wherein the powder is predominantly amorphous as a result of bulk X-ray powder diffraction. 제1항에 있어서, 분말이 벌크 X-선 분말 회절분석 결과 주로 결정성인 조성물.The composition of claim 1 wherein the powder is primarily crystalline as a result of bulk X-ray powder diffraction. 제1항에 있어서, 분말이 전자 회절분석 결과 주로 결정성인 조성물.The composition of claim 1 wherein the powder is primarily crystalline as a result of electron diffraction. 필수적으로 탄화붕소 1 내지 99중량% 및 이붕소화 티탄 1 내지 99중량% 미만의 균질 혼합물을 함유하고, 이때 혼합물은 0.5㎛ 미만의 평균 입자 직경을 가지며, 입자는 전자 프로우브 분석 X-선도가 실질적으로 탄화붕소 및 이붕소화 티탄의 개별농도에 대하여 모두 직경 0.5㎛ 이하를 나타낼 정도로 균일하게 분산되며, 치밀화된 조성물은 실질적으로 직경 5㎛ 미만의 평균 그레인 크기를 갖는 탄화붕소 그레인과 함께 균일하게 분산된 직경 3㎛ 이하의 평균 그레인 크기를 갖는 이붕소화 티탄을 포함하는 분말 조성물로부터 제조되는 치밀화된 세라믹 조성물.Essentially contains a homogeneous mixture of less than 1 to 99% by weight of boron carbide and less than 1 to 99% by weight of titanium diboride, wherein the mixture has an average particle diameter of less than 0.5 μm, and the particles have substantially no electron probe analysis X-ray Are uniformly dispersed to exhibit a diameter of 0.5 μm or less for both individual concentrations of boron carbide and titanium diboride, and the densified composition is uniformly dispersed with boron carbide grains having an average grain size of substantially less than 5 μm in diameter. A densified ceramic composition prepared from a powder composition comprising titanium diboride having an average grain size of 3 μm in diameter or less. 제7항에 있어서, 치밀화될 경우 이붕소화 티탄 및 탄화 붕소 외에 약 5중량% 미만의 다른 상을 함유하는 조성물.8. The composition of claim 7, which, when densified, contains less than about 5% by weight of other phases in addition to titanium diboride and boron carbide. 제7항에 있어서, 20 내지 30중량%의 TiB2를 함유하는 치밀화된 조성물.8. The densified composition of claim 7 containing 20-30 wt% TiB 2 . 제7항에 있어서, 치밀화를 핫 프레싱 (hot pressing)이나 핫 아이소스태틱 프레싱 (hot isostatic pressing)시켜 수행하는 치밀화된 조성물.8. The densified composition of claim 7, wherein the densification is carried out by hot pressing or hot isostatic pressing. 제7항에 있어서, 치밀화를 무압력 소결시켜 수행하는 치밀화된 조성물.8. The densified composition of claim 7, wherein the densification is carried out by pressureless sintering. 제7항에 있어서, 1kg의 하중을 사용하여 3,000kg/mm2이상의 빅커스 미세 경도를 갖는 치밀화된 조성물.8. The densified composition of claim 7 having a Vickers microhardness of at least 3,000 kg / mm 2 using a load of 1 kg. 제7항에 있어서, 압입 방법을 통하여 측정하여 5MN/m3/2이상의 파괴 인성을 갖는 치밀화된 조성물.8. The densified composition of claim 7 having a fracture toughness of at least 5 MN / m 3/2 as measured by the indentation method. 탄화붕소 및 이붕소화 티탄 그레인이 778배의 배율에서 전자 현미경 분석 스캐닝에 의하여 측정한 결과 10이하인 1 내지 99% 이상의 이붕소화 티탄 농도 범위를 능가하는 미소상의 면적 %의 변화의 평균 계수가 각각 26×26 마이크론의 20개의 필드임을 특징으로 하는 분산액을 나타내는, 필수적으로 탄화붕소 및 이붕소화 티탄을 포함하는 치밀화된 복합 세라믹 조성물.The average coefficient of change in area% of microphase over boron carbide and titanium diborate concentration ranges of 1 to 99% or more, measured by electron microscopic analysis scanning at a magnification of 778 times, respectively, was 26 ×. A densified composite ceramic composition comprising essentially boron carbide and titanium diboride, representing a dispersion characterized by 20 fields of 26 microns. 탄화붕소 및 이붕소화 티탄늄 그레인이 778배의 배율에서 전자 현미경 분석 스캐닝에 의하여 측정한 결과 9미만인 이붕소화 티탄의 면적 %의 평균 범위가 26×26 마이크론인 20개의 필드임을 특징으로 하는 분산액을 나타내는, 필수적으로 탄화붕소 및 이붕소화 티탄을 포함하는 치밀화된 복합 세라믹 조성물.A dispersion characterized in that the boron carbide and titanium diborate grains are 20 fields with an average range of 26% to 26 microns in area% of titanium diborate having less than 9 as measured by electron microscopic analysis scanning at a magnification of 778 times. , Essentially densified composite ceramic composition comprising boron carbide and titanium diboride. 필수적으로 붕소원, 휘발성 티탄원, 휘발성 탄소원 및 수소원을 포함하는 반응 가스에 유효한 레이저를 방사시켜 일부 이상의 가스를 탄화붕소 및 이붕소화 티탄의 균질 혼합물로 전환시킴을 특징으로 하는 방법.And radiating an effective laser to a reaction gas comprising essentially a boron source, a volatile titanium source, a volatile carbon source, and a hydrogen source to convert at least some of the gas into a homogeneous mixture of boron carbide and titanium diboride. 제16항에 있어서, 붕소원이 알킬 붕소, 알킬 붕산염, 수소화 붕소 또는 할로겐화 붕소인 방법.The method of claim 16, wherein the boron source is alkyl boron, alkyl borate, boron hydride or boron halide. 제16항에 있어서, 탄소원이 휘발성 탄화수소나 휘발성 할로탄소인 방법.The method of claim 16 wherein the carbon source is a volatile hydrocarbon or a volatile halocarbon. 제16항에 있어서, 탄소원이 메탈, 에틸렌 또는 사염화탄소인 방법.The method of claim 16, wherein the carbon source is metal, ethylene or carbon tetrachloride. 제16항에 있어서, 탄소원이 B4C로 정의된 붕소원중의 붕소를 기준으로 하여 계산하여 20 내지 80%의 화학양론적 양으로 출발 가스 혼합물중에 존재하는 방법.17. The process of claim 16, wherein the carbon source is present in the starting gas mixture in a stoichiometric amount of 20 to 80% calculated on the basis of boron in the boron source defined as B 4 C. 제16항에 있어서, 수소원이 B4C 및 TiB2로 정의된 붕소원중의 붕소 및 TiB2로 정의된 티탄원중의 티탄을 기준하여 계산하여 화학양론적 양 내지 화학양론적 양의 10배의 양으로 존재하는 방법.17. The method according to claim 16, wherein the hydrogen source is calculated from the stoichiometric to stoichiometric amounts of 10 in terms of boron in the boron source defined as B 4 C and TiB 2 and titanium in the titanium source defined as TiB 2 . How it exists in the amount of a pear. 제16항에 있어서, 티탄원이 할로겐화 티탄 또는 티타늄 알콕사이드인 방법.The method of claim 16, wherein the titanium source is titanium halide or titanium alkoxide. 제16항에 있어서, 실질적으로 모든 티탄이 TiB2로서 결합할 정도의 양으로, 티탄원이 존재하는 방법.The method of claim 16, wherein the titanium source is present in an amount such that substantially all titanium binds as TiB 2 . 제16항에 있어서, 화학양론적 양의 균질 혼합물이 치밀화 후에 TiB2및 B4C외의 5중량% 미만의 다른 상을 함유하는 방법.The method of claim 16, wherein the stoichiometric amount of the homogeneous mixture contains less than 5% by weight of other phases other than TiB 2 and B 4 C after densification. 제16항에 있어서, 300 내지 1,500토르의 절대압력에서 반응을 수행하는 방법.The process of claim 16 wherein the reaction is carried out at an absolute pressure of 300 to 1,500 Torr. 제16항에 있어서, 반응가스가 연속 스트림을 형성하는 방법.The method of claim 16, wherein the reaction gas forms a continuous stream. 제16항에 있어서, 붕소-고함유 탄화붕소가 또한 존재하는 방법.The method of claim 16, wherein boron-rich boron carbide is also present. 제16항에 있어서, 레이저 방사가 CO2레이저에 의하여 공급되는 방법.The method of claim 16, wherein the laser radiation is supplied by a CO 2 laser. 제16항의 방법으로 제조한 분말.Powder prepared by the method of claim 16. 제29항의 분말로 부터 제조한 치밀화된 물품.A densified article made from the powder of claim 29. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880701763A 1987-04-27 1988-04-21 Titanium diboride/boron composites with high hardness and toughness KR910001933B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US4308087A 1987-04-27 1987-04-27
US043080 1987-04-27
PCT/US1988/001352 WO1988008328A1 (en) 1987-04-27 1988-04-21 Titanium diboride/boron carbide composites with high hardness and toughness
US181852 1994-01-13

Publications (2)

Publication Number Publication Date
KR890700548A true KR890700548A (en) 1989-04-25
KR910001933B1 KR910001933B1 (en) 1991-03-30

Family

ID=21925394

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880701763A KR910001933B1 (en) 1987-04-27 1988-04-21 Titanium diboride/boron composites with high hardness and toughness

Country Status (2)

Country Link
KR (1) KR910001933B1 (en)
WO (1) WO1988008328A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108962A (en) * 1988-05-26 1992-04-28 The Dow Chemical Company Composition and method for producing boron carbide/titanium diboride composite ceramic powders using a boron carbide substrate
US5047372A (en) * 1988-12-29 1991-09-10 Ucar Carbon Technology Corporation Alloyed powder and method of preparing same
JP3228517B2 (en) * 1990-12-12 2001-11-12 皓一 新原 Boron carbide composite sintered body
DE4319460A1 (en) * 1993-06-11 1994-12-15 Kempten Elektroschmelz Gmbh Composite materials based on boron carbide, titanium diboride and elemental carbon and process for their production
FR2945035B1 (en) * 2009-04-29 2011-07-01 Commissariat Energie Atomique PROCESS FOR PRODUCING A POWDER COMPRISING CARBON, SILICON AND BORON, THE SILICON PRESENTING SAME AS SILICON CARBIDE AND THE BORON PRESENTING IN THE FORM OF BORON CARBIDE AND / OR BORON ALONE
CN114315367B (en) * 2021-12-28 2023-03-17 北京理工大学 Titanium diboride-boron carbide-titanium carbide composite ceramic material and hot-pressing preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282195A (en) * 1975-02-03 1981-08-04 Ppg Industries, Inc. Submicron titanium boride powder and method for preparing same
US4275026A (en) * 1979-11-02 1981-06-23 Ppg Industries, Inc. Method for preparing titanium diboride shapes
US4289952A (en) * 1979-12-12 1981-09-15 Massachusetts Institute Of Technology Process for controlling powder size with optical energy
JPS59206042A (en) * 1983-05-07 1984-11-21 Sumitomo Electric Ind Ltd Process and apparatus for producing fine powder
US4558017A (en) * 1984-05-14 1985-12-10 Allied Corporation Light induced production of ultrafine powders comprising metal silicide powder and silicon
EP0211948A4 (en) * 1985-02-12 1988-01-21 Dow Chemical Co Process for the preparation of submicron-sized boron carbide powders.
US4689129A (en) * 1985-07-16 1987-08-25 The Dow Chemical Company Process for the preparation of submicron-sized titanium diboride

Also Published As

Publication number Publication date
WO1988008328A1 (en) 1988-11-03
KR910001933B1 (en) 1991-03-30

Similar Documents

Publication Publication Date Title
CA1149133A (en) Sintered polycrystalline nitrogen stabilized cubic aluminum oxide material
Newkirk et al. Preparation of Lanxide™ ceramic matrix composites: Matrix formation by the directed oxidation of molten metals
Naslain et al. Boron-bearing species in ceramic matrix composites for long-term aerospace applications
US5030600A (en) Novel sialon composition
Zhang et al. Improving the oxidation resistance of Ti3SiC2 by forming a Ti3Si0. 9Al0. 1C2 solid solution
Kulpa et al. Oxidation of TiB2 powders below 900° C
US4491482A (en) Powdery material of minute composite ceramic particles having a dual structure and a process and an apparatus producing thereof
Shimada et al. Formation and microstructure of carbon‐containing oxide scales by oxidation of single crystals of zirconium carbide
Besmann Chemical Vapor Deposition in the Boron‐Carbon‐Nitrogen System
CA1294634C (en) Titanium diboride/boron carbide composites with high hardness and toughness
KR900701682A (en) Method and composition for preparing boron carbide / titanium diboride composite ceramic powder using boron carbide substrate
JP2000500426A (en) Whisker reinforced ceramic cutting tool and composition thereof
Zeng et al. Powder characteristics, sinterability, and mechanical properties of TiB2 prepared by three reduction methods
KR890700548A (en) Titanium Diboride / Boron Carbide Compositions with High Hardness and Toughness
US4492764A (en) Sintered ceramic body containing titanium carbonitride
JP5528749B2 (en) Boron carbide-silicon carbide composite ceramic and method for producing the ceramic
Bender et al. Evaluation of potential BN polymer precursors
JPS6186487A (en) Ceramic structural body
Stinton et al. Fabrication of Ceramic‐Ceramic Composites by Chemical Vapor Deposition
Dion et al. Physico-chemistry and cytotoxicity of ceramics: Part I–Characterization of ceramic powders
US5240495A (en) In situ formation of metal-ceramic oxide microstructures
Shaffer Solubility of boron in alpha silicon carbide
da Rocha et al. Microstructure and mechanical properties of (Zr, Ti) B2–SiC composites obtained by pressureless sintering of ZrB2–SiC–TiO2 powder mixtures
Prikhna et al. Study of the thermal stability and mechanical characteristics of MAX phases of Ti-Al-C (N) system and their solid solutions
Hong et al. Ceramic‐Matrix Composites Via in‐Situ Reaction Sintering

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee