KR890008836A - 메모리 장치 - Google Patents
메모리 장치 Download PDFInfo
- Publication number
- KR890008836A KR890008836A KR1019880014994A KR880014994A KR890008836A KR 890008836 A KR890008836 A KR 890008836A KR 1019880014994 A KR1019880014994 A KR 1019880014994A KR 880014994 A KR880014994 A KR 880014994A KR 890008836 A KR890008836 A KR 890008836A
- Authority
- KR
- South Korea
- Prior art keywords
- memory device
- memory cell
- memory
- cell groups
- decoder
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Rehabilitation Tools (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 메모리 장치의 한 실시예의 회로 블럭도.
제2도는 메모리 장치의 한 실시예의 회로도.
제3도는 제어신호 디코더의 입력 타이밍을 나타내는 타이밍 챠트.
Claims (1)
- 일괄 기입 기능을 가진 메모리 장치에 있어서 메모리 셀 어레이가 복수의 메모리 셀군에 분할되며, 상기 각 메모리 셀 군에 대응하여 메모리 셀 군을 일괄 기입 구동하는 디코더가 마련되고, 일관 기입시에 상기 각 디코더가 서로 다른 타이밍으로 동작하도록 되어 있는 것을 특징으로 하는 메모리장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP290408 | 1987-11-17 | ||
JP62290408A JPH01130385A (ja) | 1987-11-17 | 1987-11-17 | メモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890008836A true KR890008836A (ko) | 1989-07-12 |
Family
ID=17755629
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880014994A KR890008836A (ko) | 1987-11-17 | 1988-11-15 | 메모리 장치 |
KR1019880014994A KR0135085B1 (ko) | 1987-11-17 | 1988-11-15 | 메모리장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880014994A KR0135085B1 (ko) | 1987-11-17 | 1988-11-15 | 메모리장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4949308A (ko) |
JP (1) | JPH01130385A (ko) |
KR (2) | KR890008836A (ko) |
FR (1) | FR2623321B1 (ko) |
GB (1) | GB2212683B (ko) |
NL (1) | NL194851C (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5054000A (en) * | 1988-02-19 | 1991-10-01 | Sony Corporation | Static random access memory device having a high speed read-out and flash-clear functions |
JP3057693B2 (ja) * | 1989-07-27 | 2000-07-04 | 日本電気アイシーマイコンシステム株式会社 | 半導体メモリ |
KR100204721B1 (ko) * | 1989-08-18 | 1999-06-15 | 가나이 쓰도무 | 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치 |
JP2634916B2 (ja) * | 1989-10-04 | 1997-07-30 | 日本電気アイシーマイコンシステム株式会社 | 半導体メモリ |
JP2768383B2 (ja) * | 1989-10-30 | 1998-06-25 | 川崎製鉄株式会社 | 半導体集積回路 |
DE69024921T2 (de) * | 1989-11-24 | 1996-09-05 | Nippon Electric Co | Halbleiterspeicheranordnung mit rückstellbaren Speicherzellen |
US5519654A (en) * | 1990-09-17 | 1996-05-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit |
US5373466A (en) * | 1992-03-25 | 1994-12-13 | Harris Corporation | Flash-clear of ram array using partial reset mechanism |
US5537350A (en) * | 1993-09-10 | 1996-07-16 | Intel Corporation | Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array |
WO1995033355A1 (fr) * | 1994-05-31 | 1995-12-07 | Capcom Co., Ltd. | Dispositif sensible aux sons, dispositif de jeu, procede de commande de ce dispositif de jeu, dispositif de jeu fonctionnant au moyen d'un faisceau lumineux, et dispositif acoustique |
US5749090A (en) * | 1994-08-22 | 1998-05-05 | Motorola, Inc. | Cache tag RAM having separate valid bit array with multiple step invalidation and method therefor |
FR2760286B1 (fr) * | 1997-02-28 | 1999-04-16 | Sgs Thomson Microelectronics | Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe |
JPH1186038A (ja) * | 1997-03-03 | 1999-03-30 | Sega Enterp Ltd | 画像処理装置、画像処理方法及び媒体並びにゲーム機 |
US6144611A (en) * | 1999-09-07 | 2000-11-07 | Motorola Inc. | Method for clearing memory contents and memory array capable of performing the same |
EP1324340A1 (en) * | 2001-12-28 | 2003-07-02 | STMicroelectronics S.r.l. | Static RAM with flash-clear function |
KR100520273B1 (ko) * | 2003-04-02 | 2005-10-11 | 삼부크러치주식회사 | 목발 |
US7701764B2 (en) * | 2006-05-17 | 2010-04-20 | Micron Technology, Inc. | Apparatus and method for reduced peak power consumption during common operation of multi-NAND flash memory devices |
US7570532B1 (en) | 2007-07-26 | 2009-08-04 | Zilog, Inc. | Overwriting memory cells using low instantaneous current |
KR200454246Y1 (ko) * | 2009-08-25 | 2011-06-23 | 전병숙 | 지팡이 겸용 목발 |
US9715909B2 (en) | 2013-03-14 | 2017-07-25 | Micron Technology, Inc. | Apparatuses and methods for controlling data timing in a multi-memory system |
KR101502566B1 (ko) * | 2013-10-10 | 2015-03-19 | 김진호 | 휴대가 간편한 목발 |
US9804793B2 (en) * | 2016-03-04 | 2017-10-31 | Intel Corporation | Techniques for a write zero operation |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5819793A (ja) * | 1981-07-27 | 1983-02-04 | Toshiba Corp | 半導体メモリ装置 |
JPS5914195A (ja) * | 1982-07-13 | 1984-01-25 | Nec Corp | 半導体装置 |
US4567578A (en) * | 1982-09-08 | 1986-01-28 | Harris Corporation | Cache memory flush scheme |
JPS5987695A (ja) * | 1982-11-11 | 1984-05-21 | Toshiba Corp | 半導体記憶装置 |
US4587629A (en) * | 1983-12-30 | 1986-05-06 | International Business Machines Corporation | Random address memory with fast clear |
EP0189700A3 (en) * | 1984-12-28 | 1988-04-27 | Thomson Components-Mostek Corporation | Static ram having a flash clear function |
US4774691A (en) * | 1985-11-13 | 1988-09-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
US4789967A (en) * | 1986-09-16 | 1988-12-06 | Advanced Micro Devices, Inc. | Random access memory device with block reset |
-
1987
- 1987-11-17 JP JP62290408A patent/JPH01130385A/ja active Pending
-
1988
- 1988-11-14 NL NL8802800A patent/NL194851C/nl not_active IP Right Cessation
- 1988-11-15 US US07/271,619 patent/US4949308A/en not_active Expired - Lifetime
- 1988-11-15 KR KR1019880014994A patent/KR890008836A/ko not_active IP Right Cessation
- 1988-11-15 KR KR1019880014994A patent/KR0135085B1/ko not_active Application Discontinuation
- 1988-11-16 GB GB8826773A patent/GB2212683B/en not_active Expired - Lifetime
- 1988-11-17 FR FR8814959A patent/FR2623321B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2212683A (en) | 1989-07-26 |
KR0135085B1 (ko) | 1998-04-25 |
NL194851B (nl) | 2002-12-02 |
JPH01130385A (ja) | 1989-05-23 |
US4949308A (en) | 1990-08-14 |
KR900007388A (ko) | 1990-06-01 |
NL8802800A (nl) | 1989-06-16 |
GB8826773D0 (en) | 1988-12-21 |
GB2212683B (en) | 1992-04-15 |
NL194851C (nl) | 2003-04-03 |
FR2623321B1 (fr) | 1993-10-01 |
FR2623321A1 (fr) | 1989-05-19 |
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