KR880003483A - Semiconductor switching circuit - Google Patents

Semiconductor switching circuit Download PDF

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Publication number
KR880003483A
KR880003483A KR1019870008570A KR870008570A KR880003483A KR 880003483 A KR880003483 A KR 880003483A KR 1019870008570 A KR1019870008570 A KR 1019870008570A KR 870008570 A KR870008570 A KR 870008570A KR 880003483 A KR880003483 A KR 880003483A
Authority
KR
South Korea
Prior art keywords
fet
gate
output
photovoltaic
semiconductor switching
Prior art date
Application number
KR1019870008570A
Other languages
Korean (ko)
Other versions
KR900005818B1 (en
Inventor
유끼오 이다까
스이찌로오 야마구찌
다께시 마쓰모두
Original Assignee
후지이 사다오
마쓰시다덴꼬오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 후지이 사다오, 마쓰시다덴꼬오 가부시끼가이샤 filed Critical 후지이 사다오
Publication of KR880003483A publication Critical patent/KR880003483A/en
Application granted granted Critical
Publication of KR900005818B1 publication Critical patent/KR900005818B1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

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  • Electronic Switches (AREA)

Abstract

내용 없음No content

Description

반도체 스위칭회로Semiconductor switching circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 제너다이오드가 정전압 전도소자로서 사용되는 본 발명에 따른 반도체 스위칭히로의 일실시예의 회로도.1 is a circuit diagram of one embodiment of a semiconductor switching hero according to the present invention in which a zener diode is used as a constant voltage conducting element.

제2도는 출력 MOSFET를 OFF상태로부터 ON상태로 시프팅하는 입력전류 즉, 감도와 저항간의 관계.2 shows the relationship between the input current, ie sensitivity and resistance, that shifts the output MOSFET from the OFF state to the ON state.

제3도는 정전압 전도소자의 부재시의 반도체 스위칭회로의 응답속도와 입력전류간의 관계도.3 is a relation diagram between the response speed and the input current of the semiconductor switching circuit in the absence of the constant voltage conduction element.

Claims (4)

상기 광신호에 응답하는 광기전성 출력을 발생하기 위한 입력전류의 존재시에 광신호를 발생하는 광방사소자에 광학적 접속된 다이오드 어레이, 상기 광기전성 다이오드 어레이와 직렬로 접속된 저항, 게이트 및 소오스에 대한 상기 광기전성 출력의 인가에 따라 제1 임피이던스 상태로부터 제2 임피이던스 상태로 되도록 상기광기전성 다이오드 어레이에 접속된 출력 FET, 드레인 및 소오스가 상기 출력 FET의 게이트 및 소오스에 접속되고 게이트 및 소오스가 상기 저항의 양단에 접속되고 광기전성 다이오드 어레이에서의 상기 광기전성 출력의 발생에 따라 저항 양단에 걸린 전압에 의하여 오프상태로 바이어스 될 수 있는 디프레션 모드의 구동 FET, 및 상기 디프레선 모드 구동 FET의 드레스호울드 전압보다 높은 전압의 인가에 따라 전도성 있게 되도록 상기 저항에 병렬로 접속되고 상기 전도에 따른 전도전류로서 게이트와 소오스간의 충전 및 출력 FET의 드레인과 게이트간의 방전에 기여하는 정전압 전도 소자로 구성되는 것을 특징으로 하는 반도체 스위칭회로.A diode array optically connected to an optical radiating element for generating an optical signal in the presence of an input current for generating a photovoltaic output responsive to the optical signal, a resistor, a gate and a source connected in series with the photovoltaic diode array An output FET, a drain, and a source connected to the photovoltaic diode array are connected to a gate and a source of the output FET and the gate and the source connected to the photovoltaic diode array such that the application of the photovoltaic output to the second impedance state results in a second impedance state. A drive FET in a depression mode connected to both ends of the resistor and capable of being biased off by a voltage across the resistor in response to the occurrence of the photovoltaic output in the photovoltaic diode array, and a dress of the depressor mode drive FET Even if it becomes conductive with the application of a voltage higher than the Semiconductor switching circuit, characterized in that connected in parallel with the resistor is configured as a conducting current according to the conduction in the constant voltage conduction element that contributes to the discharge between the drain and the gate of the charge FET and output between the gate and the source. 제1항에 있어서, 상기 정전압 전도소자는 상기 구동 FET의 상기 드레스호울드 전압보다 높은 항복전압을 갖는 제너다이오드인 것을 특징으로 하는 반도체 스위칭회로.The semiconductor switching circuit according to claim 1, wherein the constant voltage conducting element is a zener diode having a breakdown voltage higher than the dresshold voltage of the driving FET. 제1항에 있어서, 상기 정전압 전도소자는 상기 구동 FET보다 높은 드레스 호울드 전압을 가지며 게이트와 드레인간이 단락회로인 인핸스먼트 모드 FET인 것을 특징으로 하는 반도체 스위칭회로.The semiconductor switching circuit of claim 1, wherein the constant voltage conducting element is an enhancement mode FET having a higher dress-hold voltage than the driving FET and having a short circuit between a gate and a drain. 제1항에 있어서, 상기 출력 FET는 MOSFET인 것을 특징으로 반도체 스위칭회로.The semiconductor switching circuit according to claim 1, wherein said output FET is a MOSFET. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870008570A 1986-08-11 1987-08-05 Semiconductor switching circuit KR900005818B1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP61-188272 1986-08-11
JP18827286 1986-08-11
JP188272 1986-08-11
JP61-255023 1986-10-27
JP61255023A JPS63153916A (en) 1986-08-11 1986-10-27 Semiconductor switching circuit
JP255023 1986-10-27

Publications (2)

Publication Number Publication Date
KR880003483A true KR880003483A (en) 1988-05-17
KR900005818B1 KR900005818B1 (en) 1990-08-11

Family

ID=16220761

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008570A KR900005818B1 (en) 1986-08-11 1987-08-05 Semiconductor switching circuit

Country Status (2)

Country Link
JP (1) JPS63153916A (en)
KR (1) KR900005818B1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2757438B2 (en) * 1989-03-17 1998-05-25 松下電工株式会社 Optically coupled relay circuit
JPH0812993B2 (en) * 1990-10-26 1996-02-07 松下電工株式会社 Semiconductor relay circuit
JPH03238918A (en) * 1990-02-15 1991-10-24 Matsushita Electric Works Ltd Semiconductor relay circuit
JPH0812992B2 (en) * 1990-10-26 1996-02-07 松下電工株式会社 Semiconductor relay circuit
US5138177A (en) * 1991-03-26 1992-08-11 At&T Bell Laboratories Solid-state relay
JP2009147022A (en) * 2007-12-12 2009-07-02 Toshiba Corp Optical semiconductor relay

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629458B2 (en) * 1973-07-02 1981-07-08
JPS5368066A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Semiconductor switch
JPS553259A (en) * 1978-06-21 1980-01-11 Fujitsu Ltd Switching circuit
JPS5529972U (en) * 1978-08-16 1980-02-27
US4492883A (en) * 1982-06-21 1985-01-08 Eaton Corporation Unpowered fast gate turn-off FET
JPS61165210A (en) * 1985-01-17 1986-07-25 Ishikawajima Harima Heavy Ind Co Ltd Rolling mill
JPH0478210A (en) * 1990-07-18 1992-03-12 Miharu Tsushin Kk Automatic frequency control method for notch filter or band eliminate filter

Also Published As

Publication number Publication date
KR900005818B1 (en) 1990-08-11
JPH0481894B2 (en) 1992-12-25
JPS63153916A (en) 1988-06-27

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