KR870003581A - Low resistance contact semiconductor device and its manufacturing method - Google Patents
Low resistance contact semiconductor device and its manufacturing method Download PDFInfo
- Publication number
- KR870003581A KR870003581A KR1019860008003A KR860008003A KR870003581A KR 870003581 A KR870003581 A KR 870003581A KR 1019860008003 A KR1019860008003 A KR 1019860008003A KR 860008003 A KR860008003 A KR 860008003A KR 870003581 A KR870003581 A KR 870003581A
- Authority
- KR
- South Korea
- Prior art keywords
- metal layer
- semiconductor device
- region
- refractory metal
- substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 8
- 229910021332 silicide Inorganic materials 0.000 claims 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 본 발명에 따른 반도체 장치의 일부 횡단면도.1 is a partial cross-sectional view of a semiconductor device according to the present invention.
제 2 도는 부분 공정이 완료된 반도체 장치의 일부 횡단면도.2 is a partial cross-sectional view of a semiconductor device in which a partial process is completed.
제 3 도는 제 1 도에 도시된 점선영역의 확대도.3 is an enlarged view of the dotted line region shown in FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : MOSFET 12 : 기판10: MOSFET 12: substrate
16 : 소오스 영역 18 : 드레인 영역16: source region 18: drain region
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78095685A | 1985-09-27 | 1985-09-27 | |
US780,956 | 1985-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870003581A true KR870003581A (en) | 1987-04-18 |
KR940009584B1 KR940009584B1 (en) | 1994-10-15 |
Family
ID=25121206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860008003A KR940009584B1 (en) | 1985-09-27 | 1986-09-25 | Low resistance contact for a semiconductor device and method of making same |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS6278817A (en) |
KR (1) | KR940009584B1 (en) |
DE (1) | DE3632217A1 (en) |
SE (1) | SE8603963L (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2624304B1 (en) * | 1987-12-04 | 1990-05-04 | Philips Nv | METHOD FOR ESTABLISHING AN ELECTRICAL INTERCONNECTION STRUCTURE ON A SILICON SEMICONDUCTOR DEVICE |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5575256A (en) * | 1978-12-01 | 1980-06-06 | Nec Corp | Semiconductor device |
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS60119750A (en) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | Manufacture of semiconductor device |
-
1986
- 1986-09-19 SE SE8603963A patent/SE8603963L/en not_active Application Discontinuation
- 1986-09-22 JP JP61224069A patent/JPS6278817A/en active Pending
- 1986-09-23 DE DE19863632217 patent/DE3632217A1/en not_active Withdrawn
- 1986-09-25 KR KR1019860008003A patent/KR940009584B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS6278817A (en) | 1987-04-11 |
KR940009584B1 (en) | 1994-10-15 |
SE8603963L (en) | 1987-03-28 |
SE8603963D0 (en) | 1986-09-19 |
DE3632217A1 (en) | 1987-04-02 |
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---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20011011 Year of fee payment: 8 |
|
LAPS | Lapse due to unpaid annual fee |