KR860005447A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- KR860005447A KR860005447A KR1019850008857A KR850008857A KR860005447A KR 860005447 A KR860005447 A KR 860005447A KR 1019850008857 A KR1019850008857 A KR 1019850008857A KR 850008857 A KR850008857 A KR 850008857A KR 860005447 A KR860005447 A KR 860005447A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-262207 | 1984-12-12 | ||
JP59262207A JPS61140168A (en) | 1984-12-12 | 1984-12-12 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860005447A true KR860005447A (en) | 1986-07-23 |
KR900000635B1 KR900000635B1 (en) | 1990-02-01 |
Family
ID=17372561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850008857A KR900000635B1 (en) | 1984-12-12 | 1985-11-27 | Semiconductor memory device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS61140168A (en) |
KR (1) | KR900000635B1 (en) |
DE (1) | DE3543937A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61184861A (en) * | 1985-02-12 | 1986-08-18 | Matsushita Electronics Corp | Semiconductor device |
JPS62120070A (en) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | Semiconductor memory |
JP2767104B2 (en) * | 1987-03-30 | 1998-06-18 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
JP2621181B2 (en) * | 1987-06-12 | 1997-06-18 | 日本電気株式会社 | MIS type semiconductor memory device |
JPH0262073A (en) * | 1988-08-26 | 1990-03-01 | Mitsubishi Electric Corp | Semiconductor memory device |
JP2819520B2 (en) * | 1991-05-07 | 1998-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | DRAM cell |
JPH05175452A (en) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | Semiconductor storage device and its manufacture |
US6468855B2 (en) | 1998-08-14 | 2002-10-22 | Monolithic System Technology, Inc. | Reduced topography DRAM cell fabricated using a modified logic process and method for operating same |
US6573548B2 (en) * | 1998-08-14 | 2003-06-03 | Monolithic System Technology, Inc. | DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
US6570206B1 (en) * | 2000-03-29 | 2003-05-27 | Hitachi, Ltd. | Semiconductor device |
US6677633B2 (en) | 2002-09-24 | 2004-01-13 | Hitachi, Ltd. | Semiconductor device |
DE102004043858A1 (en) * | 2004-09-10 | 2006-03-16 | Infineon Technologies Ag | Method for producing a memory cell, a memory cell arrangement and memory cell arrangement |
US7323379B2 (en) | 2005-02-03 | 2008-01-29 | Mosys, Inc. | Fabrication process for increased capacitance in an embedded DRAM memory |
US7538371B2 (en) | 2005-09-01 | 2009-05-26 | United Microelectronics Corp. | CMOS image sensor integrated with 1-T SRAM and fabrication method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017885A (en) * | 1973-10-25 | 1977-04-12 | Texas Instruments Incorporated | Large value capacitor |
JPH0666436B2 (en) * | 1983-04-15 | 1994-08-24 | 株式会社日立製作所 | Semiconductor integrated circuit device |
-
1984
- 1984-12-12 JP JP59262207A patent/JPS61140168A/en active Pending
-
1985
- 1985-11-27 KR KR1019850008857A patent/KR900000635B1/en not_active IP Right Cessation
- 1985-12-12 DE DE19853543937 patent/DE3543937A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3543937C2 (en) | 1989-05-24 |
DE3543937A1 (en) | 1986-06-12 |
JPS61140168A (en) | 1986-06-27 |
KR900000635B1 (en) | 1990-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030130 Year of fee payment: 14 |
|
LAPS | Lapse due to unpaid annual fee |