KR840008217A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR840008217A KR840008217A KR1019840001232A KR840001232A KR840008217A KR 840008217 A KR840008217 A KR 840008217A KR 1019840001232 A KR1019840001232 A KR 1019840001232A KR 840001232 A KR840001232 A KR 840001232A KR 840008217 A KR840008217 A KR 840008217A
- Authority
- KR
- South Korea
- Prior art keywords
- silicide
- electrode
- film
- metal
- dielectric film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 5
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 claims 2
- 229910021339 platinum silicide Inorganic materials 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims 2
- 235000010678 Paulownia tomentosa Nutrition 0.000 claims 1
- 240000002834 Paulownia tomentosa Species 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- -1 naobium Chemical compound 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 반도체 장치의 등가(等價)회로를 도시한 도면.
제2도 A, 제2도 B 및 제2도 C는 각각 본 발명의 실시예를 도시한 단면도, 평면도 및 등가 회로도이다.
Claims (15)
- 반도체 기판위에 적층해서 형성된 2제의 전극, 유전체막 및 제1의 전극을 적어도 갖추고, 상기 반도체 기판과 상기 제2의 전극에 의해서 형성된 다이오우드 위에 상기 제2의 전극, 상기 유전체막 및 상기 제1의 전극에 의해서 형성된 캐파시터가 적층되어 있는 반도체 장치.
- 특허청구의 범위 제1항에 있어서, 상기 제2의 전극은 금속 혹은 금속 실리사이드의 단층 혹은 적층막이다.
- 특허청구의 범위 제2항에 있어서, 상기 금속은 A1,W,Mo,Ta,Ti 혹은 Ti-W 합금으로 된는 군(群)에서 선택된다.
- 특허청구의 범위 제2항에 있어서, 상기 금속실리사이드는, 파라즘실리사이드, 백금실리사이드, 탄탈륨실리사이드, 텅크스텔실리사이드, 몰리브텔실리사이드, 타타늄실리사이드 및 하프늄실리사이드으로되는 군에서 선택되는 적어도 1종이다.
- 특허청구의 범위 제3항에 있어서, A1으로 되는 상기 제2의 전극과, 상기 유전체막의 사이에 다른 금속막이 끼워져 있다.
- 특허청구의 범위 제1항에 있어서, 상기 유전체 막은 산화탄탈륨, 산화니오븀, 산화티타늄, 산화하프늄, 산화알미늄, 2산화실리콘 및 질화 실리콘으로된 군에서 선택된 적어도 1종으로 되는막의 단층 혹은 적층막이다.
- 특허청구의 범위 제1항에 있어서, 상기 유전체 막은 상기 제2의 전극의 표면을 산화해서 형성된 막이다.
- 특허청구의 범위 제7항에 있어서, 상기 유전체 막은 금속 실리사이드의 산화막이다.
- 특허청구의 범위 제2항에 있어서, 상기 제2의 전극은 금속 실리사이드 막이며, 상기 유전체막은 천이 금속의 산화물의 막이다.
- 특허청구의 범위 제9항에 있어서, 상기 금속 실리사이드는 백금 실리사이드, 파라즘실리사이드, 탄탈륨실리사이드, 텅크스실리사이드, 몰리브텐실리사이드, 티타늄실리사이드 및 하프늄 실리사이드 등으로 되는 군에서 선택된 적어도 1종이다.
- 특허청구 범위 제9항에 있어서, 상기 제2의 전극과 상기 유전체 막의 사이에는, 다른 금속막이 끼워져 있다.
- 특허청구의 범위 제11항에 있어서, 상기 금속막은 탄탈륨, 나오븀, 티타늄, 하프늄 및 지르코늄으로 되는 군에서 선택된다.
- 특허청구의 범위 제1항에 있어서, 상기 반도체기판 내에는 상기 반도체 기판 표면에서 소정의 거리를 가진 위치에 제3의 전극이 형성되어 있다.
- 특허청구의 범위 제13항에 있어서, 상기 제3의 전극은 다량의 불순물을 도포(塗布)한 낮은 저항의 매입층이다.
- 특허청구의 범위 제13항에 있어서, 상기 제3의 전극은 상기 반도체 기판내에 형성된 낮은 저항 영역을 거쳐서 상기 제1의 전극과 전기적으로 접속되어 있다.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58-044179 | 1983-03-18 | ||
JP58044179A JPS59171157A (ja) | 1983-03-18 | 1983-03-18 | 半導体装置 |
JP44179 | 1983-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840008217A true KR840008217A (ko) | 1984-12-13 |
KR910002813B1 KR910002813B1 (ko) | 1991-05-04 |
Family
ID=12684348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840001232A KR910002813B1 (ko) | 1983-03-18 | 1984-03-12 | 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4636833A (ko) |
EP (1) | EP0122459A3 (ko) |
JP (1) | JPS59171157A (ko) |
KR (1) | KR910002813B1 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4809052A (en) * | 1985-05-10 | 1989-02-28 | Hitachi, Ltd. | Semiconductor memory device |
JP2617457B2 (ja) * | 1985-11-29 | 1997-06-04 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JPS6379373A (ja) * | 1986-09-24 | 1988-04-09 | Hitachi Ltd | 半導体装置およびその製造方法 |
US4803363A (en) * | 1987-04-27 | 1989-02-07 | Hughes Aircraft Company | Infrared detector with integral feedback capacitance |
US5189503A (en) * | 1988-03-04 | 1993-02-23 | Kabushiki Kaisha Toshiba | High dielectric capacitor having low current leakage |
JPH0817229B2 (ja) * | 1988-03-31 | 1996-02-21 | サンケン電気株式会社 | 半導体装置 |
US5168078A (en) * | 1988-11-29 | 1992-12-01 | Mcnc | Method of making high density semiconductor structure |
US5025304A (en) * | 1988-11-29 | 1991-06-18 | Mcnc | High density semiconductor structure and method of making the same |
JPH0677402A (ja) * | 1992-07-02 | 1994-03-18 | Natl Semiconductor Corp <Ns> | 半導体デバイス用誘電体構造及びその製造方法 |
US5569487A (en) * | 1995-01-23 | 1996-10-29 | General Electric Company | Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon |
JP2630292B2 (ja) * | 1995-02-27 | 1997-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
US5708559A (en) * | 1995-10-27 | 1998-01-13 | International Business Machines Corporation | Precision analog metal-metal capacitor |
US6218260B1 (en) | 1997-04-22 | 2001-04-17 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby |
JPH1154706A (ja) * | 1997-08-06 | 1999-02-26 | Nec Corp | Mimキャパシタ及びその製造方法 |
US6303969B1 (en) * | 1998-05-01 | 2001-10-16 | Allen Tan | Schottky diode with dielectric trench |
KR100363083B1 (ko) | 1999-01-20 | 2002-11-30 | 삼성전자 주식회사 | 반구형 그레인 커패시터 및 그 형성방법 |
KR100317042B1 (ko) | 1999-03-18 | 2001-12-22 | 윤종용 | 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법 |
JP2003101036A (ja) * | 2001-09-25 | 2003-04-04 | Sanyo Electric Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
KR20020043815A (ko) | 2000-12-04 | 2002-06-12 | 윤종용 | 반구형 그레인 커패시터의 제조방법 |
US6921702B2 (en) * | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
KR100552704B1 (ko) * | 2003-12-17 | 2006-02-20 | 삼성전자주식회사 | 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법 |
US8513634B2 (en) * | 2003-12-17 | 2013-08-20 | Samsung Electronics Co., Ltd. | Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7592251B2 (en) * | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506893A (en) * | 1968-06-27 | 1970-04-14 | Ibm | Integrated circuits with surface barrier diodes |
DE2508553C3 (de) * | 1975-02-27 | 1981-06-25 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiterschaltungsanordnung |
JPS5325383A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Compound type capacitor in bipolar ic |
JPS6058593B2 (ja) * | 1976-10-01 | 1985-12-20 | 株式会社日立製作所 | 半導体メモリ |
US4112314A (en) * | 1977-08-26 | 1978-09-05 | International Business Machines Corporation | Logical current switch |
US4211941A (en) * | 1978-08-03 | 1980-07-08 | Rca Corporation | Integrated circuitry including low-leakage capacitance |
US4245231A (en) * | 1978-12-26 | 1981-01-13 | Motorola Inc. | Combination capacitor and transistor structure for use in monolithic circuits |
JPS5685848A (en) * | 1979-12-15 | 1981-07-13 | Toshiba Corp | Manufacture of bipolar integrated circuit |
JPS5788774A (en) * | 1980-11-25 | 1982-06-02 | Hitachi Ltd | Semiconductor device |
JPS57206062A (en) * | 1981-06-12 | 1982-12-17 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JPS5823470A (ja) * | 1981-08-06 | 1983-02-12 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS5864062A (ja) * | 1981-10-13 | 1983-04-16 | Nec Corp | 半導体記憶装置 |
JPS58127359A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体接合容量装置 |
-
1983
- 1983-03-18 JP JP58044179A patent/JPS59171157A/ja active Granted
-
1984
- 1984-03-12 KR KR1019840001232A patent/KR910002813B1/ko not_active IP Right Cessation
- 1984-03-13 EP EP84102739A patent/EP0122459A3/en not_active Withdrawn
- 1984-03-19 US US06/590,870 patent/US4636833A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0558266B2 (ko) | 1993-08-26 |
EP0122459A2 (en) | 1984-10-24 |
US4636833A (en) | 1987-01-13 |
EP0122459A3 (en) | 1986-02-05 |
JPS59171157A (ja) | 1984-09-27 |
KR910002813B1 (ko) | 1991-05-04 |
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