KR830001403A - Electroless deposition plating bath of transition metal - Google Patents

Electroless deposition plating bath of transition metal Download PDF

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Publication number
KR830001403A
KR830001403A KR1019790003683A KR790003683A KR830001403A KR 830001403 A KR830001403 A KR 830001403A KR 1019790003683 A KR1019790003683 A KR 1019790003683A KR 790003683 A KR790003683 A KR 790003683A KR 830001403 A KR830001403 A KR 830001403A
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South Korea
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plating bath
group
transition metal
complexing agent
mol
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KR1019790003683A
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Korean (ko)
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KR850001554B1 (en
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오. 말로이 2세 글랜
이. 죤슨 콘라드
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알란 아브람스
리차드슨 케미칼 컴페니
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents

Abstract

내용 없음No content

Description

천이금속의 무전해침착 도금조Electroless deposition plating bath of transition metal

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음This content is subject to disclosure, so the full text is not included.

Claims (20)

천이금속 양이온 원, 환원제, 하기 구조식의 화합물 그룹으로부터 선택한 유기인 착화제를 포함하는, 기질상의 천이금속을 무전해 침착하는 수용성 전해조.A water-soluble electrolyzer for electrolessly depositing a transition metal on a substrate, comprising a transition metal cation source, a reducing agent, and an organophosphorus complexing agent selected from the group of compounds of the following structural formulas. 상기 식에서 R1은 1-5 탄소원자 알킬, 이외 알칼리금속 및 암모늄 염 및In the above formula, R 1 is 1-5 carbon atom alkyl, other alkali metals and ammonium salts, and 상기 식에서 R2는이고 R3는 R2와 -CH2CH2OH로 구성된 그룹에서 선택하며 R4는 R2, -CH2CH2OH 및로 구성된 그룹에서 선택하고,In the above formula R 2 is And R 3 is selected from the group consisting of R 2 and -CH 2 CH 2 OH, and R 4 is R 2 , -CH 2 CH 2 OH and Select from the group consisting of, 각 M은 H,NH4와 알칼리금속으로 이루어진 그룹에서 각각 선택하며 "n"은 1-6의 정수이다.Each M is selected from the group consisting of H, NH 4 and alkali metals, and "n" is an integer of 1-6. 상기 유기인 착화제를 아미노트리(메틸렌인산), 1-하이드록시 에틸리덴-1, 1-디인산, 에틸렌디아민 테트라(메틸인산 그의 알칼리금속과 암모늄염으로 구성된 그룹에서 선택한 청구범위 1항의 도금조.The plating bath of claim 1, wherein the organophosphorus complexing agent is selected from the group consisting of amino tri (methylene phosphoric acid), 1-hydroxy ethylidene-1, 1-diphosphoric acid, ethylenediamine tetra (methyl phosphoric acid and its alkali metal and ammonium salt. 상기 환원제를 포름알데히드, 아인산이온 생성기, 붕소-잘소 화합물, 브로하이드라이드와 알킬아민 보란의 그룹으로부터 선택한 청구범위 1항의 도금조.The plating bath of claim 1, wherein the reducing agent is selected from the group consisting of formaldehyde, phosphorous acid ion generator, boron-salso compound, brohydride and alkylamine borane. 상기 천이금속 양이온원이 제1구리, 제2구리, 니켈,코발트, 제1철,제2철, 백금,팔라듐, 온 및 양이온으로 된 그룹으로부터 선택한 양이온을 공급하는 청구범위 1항의 도금조.The plating bath of claim 1, wherein the transition metal cation source supplies a cation selected from the group consisting of copper, copper, nickel, cobalt, ferrous iron, ferric iron, platinum, palladium, on, and cations. pH조절제가 도금조의 pH를 4-14로 조절하기 위하여 포함된 청구범위 1항의 도금조.The plating bath of claim 1, wherein a pH adjusting agent is included to adjust the pH of the plating bath to 4-14. 유기인 착화제가 0.001-1몰/ℓ 범위로 나타나는 청구범위 1항의 도금조.The plating bath of claim 1, wherein the organophosphorus complexing agent is in the range of 0.001-1 mol/ℓ. 상기 환원제가 0.001-1몰/ℓ로 나타내는 청구범위 1항의 도금조.The plating bath of claim 1 represented by 0.001-1 mol/ℓ of the reducing agent. 천이금속 양이온이 0.005-0.5몰/ℓ로 나타내는 청구범위 1항의 도금조.The plating bath of claim 1 in which the transition metal cation is represented by 0.005-0.5 mol/ℓ. 도금조의 온도가 25℃-100℃로 지속되는 청구범위 1항의 도금조.The plating bath of claim 1 in which the temperature of the plating bath is maintained at 25℃-100℃. 천이금속 양이온원이 구리원이며 도금조의 pH가 4-6인 청구범위 1항의 도금조.The plating bath of claim 1 in which the transition metal cation source is a copper source and the pH of the plating bath is 4-6. 천이금속 양이온원이 니켈원이며 도금조의 pH를 12-14로 조절하기 위하여 pH조절제를 포함하고 암모늄이온은 첨가하지 않은 청구범위 1항의 도금조.The plating bath of claim 1 in which the transition metal cation source is a nickel source and contains a pH adjuster to adjust the pH of the plating bath to 12-14 and no ammonium ions are added. 착화제로 하기 일반식의 인산염으로 구성된 그룹으로부터 선택한 유기인 화합물을 사용함을 특징으로 하는, 천이금속 양이온원, 환원제와 착화제를 포함하는 기질에 천이금속을 무전해 침착하기 위한 수용성 도금조.A water-soluble plating bath for electrolessly depositing a transition metal on a substrate containing a transition metal cation source, a reducing agent and a complexing agent, characterized in that an organophosphorus compound selected from the group consisting of phosphates of the following general formula is used as the complexing agent. 상기식에서 R1은 1-5탄소원자의 알킬, 이의 알칼리금속 및 암모늄 염 및상기 식에서 R2는R3는 R2-CH2CH2OH로 구성된 그룹에서 선택하고 R4는 R2-CH2CH2OH와로 구성된 그룹에서 선택하고,In the above formula, R 1 is an alkyl of 1-5 carbon atoms, its alkali metal and ammonium salt, and In the above formula R 2 is R 3 is the R 2 -CH 2 CH 2 OH selected from the group consisting of -CH 2 CH 2 OH, and 2 R R 4 and Select from the group consisting of, 각 M은 H6, NH4와 알칼리금속으로 구성된 그룹에서 각각 선택하며 " "은 1-6의 정수이다.Each M is selected from the group consisting of H 6 , NH 4 and alkali metals, and "" is an integer of 1-6. pH를 4-14로 조절하기 위하여 pH조절제를 갖는 청구범위 12항의 도금조.The plating bath of claim 12 having a pH adjusting agent to adjust the pH to 4-14. 착화제를 0.01-0.5몰/ℓ로 갖는 청구범위 12항의 도금조.The plating bath of claim 12 having a complexing agent of 0.01-0.5 mol/ℓ. 착화제를 0.02-0.2몰/ℓ로 갖는 청구범위 12항의 도금조.The plating bath of claim 12 having a complexing agent of 0.02-0.2 mol/ℓ. 환원제를 0.007-0.3몰/ℓ로 갖는 청구범위 12항의 도금조.The plating bath of claim 12 having a reducing agent of 0.007-0.3 mol/ℓ. 천이금속 양이온원을 0.05-0.5몰/ℓ로 갖는 청구범위 12항의 도금조.The plating bath of claim 12 having a transition metal cation source at 0.05-0.5 mol/ℓ. 하기 일반구조식의 인산염으로 구성된 그룹에서 선택한 유기인 화합물를 포함하는 화학환원제 존재하에 기질에 천이금속을 무전해 침착하기 위한 수성도금조내에 사용되는 착화제,A complexing agent used in an aqueous plating bath for electroless deposition of a transition metal on a substrate in the presence of a chemical reducing agent containing an organophosphorus compound selected from the group consisting of phosphates of the following general structural formula, 상기식에서 R1은 1-5 탄소원자, 이의 알칼리금속 및 암모늄 염 및 In the above formula, R 1 is 1-5 carbon atoms, alkali metal and ammonium salts thereof, and 상기식에서 R2는 In the above formula R 2 is R3는 R2와 -CH2CH2OH로 구성된 그룹에서 선택하고 R4는 R2-CH2CH2OH와,로 구성된 그룹에서 선택하고 각 M은, H, NH4와 알칼리금속으로 구성된 그룹으로부터 선택하고 n은 1-6의 정수이다.R 3 is selected from the group consisting of R 2 and -CH 2 CH 2 OH, and R 4 is R 2 -CH 2 CH 2 OH, Each M is selected from the group consisting of H, NH 4 and alkali metals, and n is an integer of 1-6. 상기 수성도금조가 pH를 4-14로 조절하기 위한 pH조절제를 갖는 청구범위 18의 착화제.The complexing agent of claim 18, wherein the aqueous plating bath has a pH adjusting agent for adjusting the pH to 4-14. 청구범위 1항의 도금조내에서 무전에 도금하는 것이 특징인 천이금속을 무전해 도금하는 방법.A method of electroless plating a transition metal characterized by electroless plating in the plating bath of claim 1. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed according to the contents of the initial application.
KR7903683A 1978-10-23 1979-10-23 Electroless bath for plating copper KR850001554B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95375078A 1978-10-23 1978-10-23
US953,750 1978-10-23
US753.750 1978-10-23

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KR830001403A true KR830001403A (en) 1983-04-30
KR850001554B1 KR850001554B1 (en) 1985-10-17

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JP (1) JPS5569249A (en)
KR (1) KR850001554B1 (en)
CA (1) CA1144304A (en)
DE (1) DE2942792A1 (en)
FR (1) FR2439822A1 (en)
GB (1) GB2034756B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454634B1 (en) * 2001-11-06 2004-11-05 재단법인서울대학교산학협력재단 Fabricating method of Copper film

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3640028C1 (en) * 1986-11-24 1987-10-01 Heraeus Gmbh W C Acid bath for the electroless deposition of gold layers
US5364460A (en) * 1993-03-26 1994-11-15 C. Uyemura & Co., Ltd. Electroless gold plating bath
JP4116718B2 (en) * 1998-11-05 2008-07-09 日本リーロナール有限会社 Electroless gold plating method and electroless gold plating solution used therefor
DE112005001074T5 (en) 2004-05-11 2007-04-05 Technic, Inc. Electroplating solution for eutectic gold-tin alloy
EP2581470B1 (en) 2011-10-12 2016-09-28 ATOTECH Deutschland GmbH Electroless palladium plating bath composition
JP6030848B2 (en) * 2012-05-07 2016-11-24 上村工業株式会社 Electroless copper plating bath and electroless copper plating method
DE102013021502A1 (en) * 2013-12-19 2015-06-25 Schlenk Metallfolien Gmbh & Co. Kg Electrically conductive fluids based on metal diphosphonate complexes
TW202031934A (en) * 2018-12-07 2020-09-01 德商德國艾托特克公司 Electroless nickel or cobalt plating solution
EP3922753A1 (en) * 2020-06-10 2021-12-15 ATOTECH Deutschland GmbH Electroless nickel or cobalt plating solution

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH530474A (en) * 1968-12-24 1972-11-15 Knapsack Ag Process for chemical thin-film nickel plating of objects made of iron or steel
NL7304650A (en) * 1973-04-04 1974-10-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454634B1 (en) * 2001-11-06 2004-11-05 재단법인서울대학교산학협력재단 Fabricating method of Copper film

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GB2034756A (en) 1980-06-11
FR2439822B1 (en) 1984-01-27
KR850001554B1 (en) 1985-10-17
GB2034756B (en) 1982-12-15
FR2439822A1 (en) 1980-05-23
DE2942792A1 (en) 1980-04-30
JPS5569249A (en) 1980-05-24
CA1144304A (en) 1983-04-12

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