KR20240043798A - 기판 처리 장치 및 기판 처리 방법 - Google Patents
기판 처리 장치 및 기판 처리 방법 Download PDFInfo
- Publication number
- KR20240043798A KR20240043798A KR1020247008120A KR20247008120A KR20240043798A KR 20240043798 A KR20240043798 A KR 20240043798A KR 1020247008120 A KR1020247008120 A KR 1020247008120A KR 20247008120 A KR20247008120 A KR 20247008120A KR 20240043798 A KR20240043798 A KR 20240043798A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- nozzle
- etching
- region
- area
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 382
- 238000012545 processing Methods 0.000 title claims abstract description 106
- 238000003672 processing method Methods 0.000 title claims description 28
- 238000005530 etching Methods 0.000 claims abstract description 300
- 239000007788 liquid Substances 0.000 claims abstract description 181
- 238000007599 discharging Methods 0.000 claims abstract description 61
- 230000007246 mechanism Effects 0.000 claims description 57
- 230000005764 inhibitory process Effects 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 22
- 238000004364 calculation method Methods 0.000 claims description 8
- 230000002401 inhibitory effect Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 description 24
- 239000000523 sample Substances 0.000 description 23
- 239000000126 substance Substances 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002224 dissection Methods 0.000 description 2
- 238000005305 interferometry Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2021-156618 | 2021-09-27 | ||
JP2021156618A JP2023047615A (ja) | 2021-09-27 | 2021-09-27 | 基板処理装置及び基板処理方法 |
PCT/JP2022/034560 WO2023048064A1 (ja) | 2021-09-27 | 2022-09-15 | 基板処理装置及び基板処理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20240043798A true KR20240043798A (ko) | 2024-04-03 |
Family
ID=85720691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020247008120A KR20240043798A (ko) | 2021-09-27 | 2022-09-15 | 기판 처리 장치 및 기판 처리 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2023047615A (zh) |
KR (1) | KR20240043798A (zh) |
TW (1) | TWI833360B (zh) |
WO (1) | WO2023048064A1 (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08279485A (ja) | 1995-04-06 | 1996-10-22 | Nisso Eng Kk | 枚葉式スピンエッチング方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3177728B2 (ja) * | 1993-08-23 | 2001-06-18 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP3257369B2 (ja) * | 1995-09-20 | 2002-02-18 | 松下電器産業株式会社 | 塗膜形成方法および塗膜形成装置 |
JP3958106B2 (ja) * | 2002-04-25 | 2007-08-15 | 大日本スクリーン製造株式会社 | 基板エッチング方法および基板エッチング装置 |
JP2004335923A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | エッチング方法およびエッチング装置 |
KR20100000266A (ko) * | 2008-06-24 | 2010-01-06 | 세메스 주식회사 | 기판 표면을 선택적으로 에칭하기 위한 기판 처리 장치 및방법 |
JP5853382B2 (ja) * | 2011-03-11 | 2016-02-09 | ソニー株式会社 | 半導体装置の製造方法、及び電子機器の製造方法 |
JP6275984B2 (ja) * | 2013-09-27 | 2018-02-07 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6064875B2 (ja) * | 2013-11-25 | 2017-01-25 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
-
2021
- 2021-09-27 JP JP2021156618A patent/JP2023047615A/ja active Pending
-
2022
- 2022-09-15 WO PCT/JP2022/034560 patent/WO2023048064A1/ja unknown
- 2022-09-15 KR KR1020247008120A patent/KR20240043798A/ko unknown
- 2022-09-20 TW TW111135460A patent/TWI833360B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08279485A (ja) | 1995-04-06 | 1996-10-22 | Nisso Eng Kk | 枚葉式スピンエッチング方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202316515A (zh) | 2023-04-16 |
WO2023048064A1 (ja) | 2023-03-30 |
TWI833360B (zh) | 2024-02-21 |
JP2023047615A (ja) | 2023-04-06 |
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