KR20220093858A - Black alumina composition and electrostatic chuck using the same - Google Patents

Black alumina composition and electrostatic chuck using the same Download PDF

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KR20220093858A
KR20220093858A KR1020200184971A KR20200184971A KR20220093858A KR 20220093858 A KR20220093858 A KR 20220093858A KR 1020200184971 A KR1020200184971 A KR 1020200184971A KR 20200184971 A KR20200184971 A KR 20200184971A KR 20220093858 A KR20220093858 A KR 20220093858A
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oxide
electrostatic chuck
alumina composition
black alumina
black
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박병호
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재단법인 포항금속소재산업진흥원
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/117—Composites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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    • C04B2235/52—Constituents or additives characterised by their shapes
    • C04B2235/5284—Hollow fibers, e.g. nanotubes
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    • C04B2235/9646—Optical properties
    • C04B2235/9661—Colour

Abstract

The present invention relates to a black alumina composition having high conductivity and an electrostatic chuck manufactured by using the same and, more specifically, to a black alumina composition having high conductivity, which comprises ferrous oxide (FeO), magnesium oxide (MgO), manganese oxide (MnO), titanium oxide (TiO), and carbon nanotubes (CNT), based on aluminum oxide (Al_2O_3). According to the present invention, the black alumina having low dielectricity can be manufactured by using carbon nanotubes, so that a phenomenon of flare or reflection occurring in a process using conventional white or ivory alumina components can be reduced. In addition, when the black alumina composition is utilized for an electrostatic chuck through reduction in electric resistance, a trap phenomenon occurring to electric charges can be reduced to improve delay of the process, thereby enabling rapid progression of the process.

Description

전도성이 높은 흑색 알루미나 조성물 및 이러한 조성물로 제작되는 정전 척{Black alumina composition and electrostatic chuck using the same}Black alumina composition with high conductivity and electrostatic chuck made of such composition

본 발명은 전도성이 높은 흑색 알루미나 조성물 및 이러한 조성물로 제작되는 정전 척에 관한 것으로서, 보다 상세하게는 흑색을 통해 빛의 반사 감소와 저유전율을 통한 정전 척의 착탈착 공정 시간 감소를 목적으로 하는 전도성이 높은 흑색 알루미나 조성물 및 이러한 조성물로 제작되는 정전 척에 관한 것이다.The present invention relates to a highly conductive black alumina composition and an electrostatic chuck made of such a composition, and more particularly, to reduce reflection of light through black and reduce the time for attaching and detaching an electrostatic chuck through low dielectric constant. High black alumina compositions and electrostatic chucks made from such compositions.

일반적으로 알루미나 소재는 반도체/디스플레이 산업의 발달과 더불어 지속적으로 발전하고 있으며, 정전척이나 노광용 부품에 많이 활용이 되고 있다.In general, alumina material continues to develop along with the development of the semiconductor/display industry, and is widely used in electrostatic chucks or parts for exposure.

도 1은 이러한 반도체 장비의 노광에서 반사현상을 나타낸 도면으로, 현재 사용되고 있는 정전 척은 정전기력을 이용하여 공정이 끝난 후 웨이퍼를 일정시간 동안 트랩(trap)을 진행하여 이송에 지연시간(delay time)을 발생시키고 있으며, 알루미나 고유의 흰색 광택을 보유하여 빛을 반사시켜 공정 불량을 발생시키는 심각한 문제점을 가진다.1 is a view showing a reflection phenomenon in the exposure of such semiconductor equipment. The electrostatic chuck currently used uses electrostatic force to trap the wafer for a certain period of time after the process is completed, resulting in a delay time in transfer. It has a serious problem of causing process defects by reflecting light by retaining alumina's inherent white luster.

한국등록특허 제 1612604호Korean Patent No. 1612604

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 표면 흑색을 구현하여 반사에 의한 공정 불량을 개선시키고, 유전율의 감소를 통한 공정 지연시간을 개선하는데 있다.The present invention has been devised to solve the above problems, and an object of the present invention is to improve process defects due to reflection by realizing a black surface, and to improve process delay time through reduction of dielectric constant.

상기와 같은 목적을 달성하기 위한 본 발명의 일측면에 따르면, 전도성이 높은 흑색 알루미나 조성물은 산화알루미늄(Al2O3)의 베이스에 산화철(FeO), 산화마그네슘(MgO), 산화망간(MnO), 산화티탄(TiO) 및 탄소나노튜브(CNT)를 포함하여 제공된다.According to one aspect of the present invention for achieving the above object, a black alumina composition with high conductivity is iron oxide (FeO), magnesium oxide (MgO), manganese oxide (MnO) on a base of aluminum oxide (Al 2 O 3 ) , titanium oxide (TiO) and carbon nanotubes (CNT) are provided.

여기서, 상기 탄소나노튜브는 0.1 내지 0.5 중량%로 포함된다.Here, the carbon nanotubes are included in an amount of 0.1 to 0.5 wt%.

정전 척은 산화알루미늄(Al2O3)의 베이스에 산화철(FeO), 산화마그네슘(MgO), 산화망간(MnO), 산화티탄(TiO) 및 탄소나노튜브(CNT)를 포함하는 알루미나 조성물로 제작된다.The electrostatic chuck is made of an alumina composition including iron oxide (FeO), magnesium oxide (MgO), manganese oxide (MnO), titanium oxide (TiO) and carbon nanotubes (CNT) on a base of aluminum oxide (Al 2 O 3 ) do.

여기서, 상기 탄소나노튜브는 0.1 내지 0.5 중량%로 포함된다.Here, the carbon nanotubes are included in an amount of 0.1 to 0.5 wt%.

아울러, 상기 알루미나 조성물은 산화철(FeO) 5중량%, 산화마그네슘(MgO) 1중량%, 산화망간(MnO) 5중량%로 이루어진다.In addition, the alumina composition consists of 5 wt% of iron oxide (FeO), 1 wt% of magnesium oxide (MgO), and 5 wt% of manganese oxide (MnO).

상기와 같은 본 발명에 따르면, 탄소나노튜브를 이용하여 저 유전율을 지닌 흑색 알루미나 제조가 가능하여, 기존의 흰색 또는 아이보리색 계열의 알루미나 부품을 이용하여 공정 진행시에 발생되는 플레어 혹은 반사 현상의 저감이 가능하며, 또한, 전기저항의 감소를 통해 정전 척에 활용할 경우 전하에 트랩(trap) 현상을 감소시켜 공정 지연시간의 개선이 가능하게 되며, 이를 통해 빠른 공정 진행이 가능하도록 하는 효과가 있다.According to the present invention as described above, it is possible to manufacture black alumina having a low dielectric constant using carbon nanotubes, so that flares or reflections occurring during the process using existing white or ivory-based alumina parts are reduced. In addition, when used in an electrostatic chuck through a reduction in electrical resistance, it is possible to improve a process delay time by reducing a charge trap phenomenon, thereby enabling rapid process progress.

도 1은 반도체 장비의 노광에서 반사현상을 나타낸 도면이다.1 is a view showing a reflection phenomenon in exposure of semiconductor equipment.

이하에서는 첨부된 도면을 참조하여 본 발명의 바람직한 일 실시예를 상세하게 설명하기로 한다.Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 흑색 알루미나 조성물의 소결상태를 나타낸 사진이고, 도 3은 정전 척 내부의 전하 모식도를 나타낸 도면이다.2 is a photograph showing the sintered state of the black alumina composition according to the present invention, and FIG. 3 is a diagram showing the electric charge inside the electrostatic chuck.

본 발명에 따른 전도성이 높은 흑색 알루미나 조성물은 산화알루미늄(Al2O3)의 베이스에 산화철(FeO), 산화마그네슘(MgO), 산화망간(MnO), 산화티탄(TiO) 및 탄소나노튜브(CNT)를 포함하여 구성된다.The highly conductive black alumina composition according to the present invention is an aluminum oxide (Al 2 O 3 ) base on a base of iron oxide (FeO), magnesium oxide (MgO), manganese oxide (MnO), titanium oxide (TiO) and carbon nanotubes (CNT). ) is included.

이러한 본 발명에서는 탄소나노튜브를 0.1 내지 0.5 중량%를 포함되도록 하여, 전기 전도도를 향상시키고 흑색을 구현하도록 한다.In the present invention, the carbon nanotubes are contained in an amount of 0.1 to 0.5% by weight to improve electrical conductivity and to implement black color.

아래의 표 1은 본 발명에 따른 알루미나 조성물의 실시예를 나타낸 것으로, 각 실시예에서는 알루미나 100g 기준 산화철(FeO) 5%, 산화마그네슘(MgO) 1%, 산화망간(MnO) 5%, 산화티탄(TiO) 2%에 탄소나노튜브(CNT)를 0.1에서 0.5%로 하여 시편을 제작하였다.Table 1 below shows examples of the alumina composition according to the present invention. In each example, based on 100 g of alumina, iron oxide (FeO) 5%, magnesium oxide (MgO) 1%, manganese oxide (MnO) 5%, titanium oxide (TiO) 2% carbon nanotube (CNT) in 0.1 to 0.5% to prepare a specimen.

Figure pat00001
Figure pat00001

상기와 같은 조성에 의한 시편을 소결시킨 결과, 도 2에서와 같이 전체적으로 검은색과 회색의 색상이 나타나고 있으며, 아래의 표 2는 상기와 같은 조성에 의해 제작된 각 실시예 시편의 전기저항 및 저항률(Volume Resistivity)을 측정한 결과를 나타낸 표로서, 탄소나노튜브의 함량에 의해 전기저항이 감소함을 알 수 있다.As a result of sintering the specimens according to the composition as described above, black and gray colors appear as a whole as shown in FIG. 2, and Table 2 below shows the electrical resistance and resistivity of the specimens prepared by the composition as described above. As a table showing the results of (Volume Resistivity) measurement, it can be seen that the electrical resistance decreases with the content of carbon nanotubes.

Figure pat00002
Figure pat00002

도 3을 참조하면, 정전 척은 정전기의 힘을 사용해 기판을 하부 전극에 고정시키는 부품으로, 정전 척에 '+', '-'를 인가시키면 대상물에는 반대의 전위가 대전('-', '+')되고, 대전된 전위에 의하여 서로 끌어당기는 힘이 발생하는 원리를 이용하며, 이러한 정전 척은 반도체의 웨이퍼를 수평으로 고정하거나 LCD의 유리 기판을 수평으로 유지하는데 주로 사용된다.Referring to FIG. 3 , the electrostatic chuck is a component that fixes the substrate to the lower electrode using the force of static electricity. When '+' and '-' are applied to the electrostatic chuck, the opposite potential is charged to the object ('-', ' +') and using the principle that a force to attract each other is generated by a charged potential, this electrostatic chuck is mainly used to horizontally fix a semiconductor wafer or to hold a glass substrate of an LCD horizontally.

상기와 같은 정전 척은 알루미늄 재질로 이루어지며, 일반적으로 흰색 계열로 플레어 혹은 반사 현상이 일어나게 되는데, 본 발명에서는 상기와 같이 정전 척을 산화알루미늄(Al2O3)의 베이스에 산화철(FeO), 산화마그네슘(MgO), 산화망간(MnO), 산화티탄(TiO) 및 탄소나노튜브(CNT)를 포함하는 흑색 알루미나 조성물로 제조되도록 하여, 반도체 공정 진행시 발생되는 플레어 혹은 반사현상이 저감될 수 있도록 한다. The electrostatic chuck as described above is made of an aluminum material, and flare or reflection occurs in general in a white color. To be prepared with a black alumina composition containing magnesium oxide (MgO), manganese oxide (MnO), titanium oxide (TiO) and carbon nanotubes (CNT), flare or reflection occurring during the semiconductor process can be reduced. do.

비록 본 발명이 상기 언급된 바람직한 실시예와 관련하여 설명되어졌지만, 발명의 요지와 범위로부터 벗어남이 없이 다양한 수정이나 변형을 하는 것이 가능하다. 따라서 첨부된 특허등록청구의 범위는 본 발명의 요지에서 속하는 이러한 수정이나 변형을 포함할 것이다.Although the present invention has been described with reference to the above-mentioned preferred embodiments, various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the appended claims will cover such modifications and variations that fall within the scope of the present invention.

부호없음unsigned

Claims (5)

산화알루미늄(Al2O3)의 베이스에 산화철(FeO), 산화마그네슘(MgO), 산화망간(MnO), 산화티탄(TiO) 및 탄소나노튜브(CNT)를 포함하는 것을 특징으로 하는 전도성이 높은 흑색 알루미나 조성물.
High conductivity, characterized in that it contains iron oxide (FeO), magnesium oxide (MgO), manganese oxide (MnO), titanium oxide (TiO) and carbon nanotubes (CNT) on a base of aluminum oxide (Al 2 O 3 ) Black alumina composition.
 제 1항에 있어서,
상기 탄소나노튜브는 0.1 내지 0.5 중량%로 포함되는 것을 특징으로 하는 전도성이 높은 흑색 알루미나 조성물.
The method of claim 1,
The high conductivity black alumina composition, characterized in that the carbon nanotube is contained in 0.1 to 0.5% by weight.
 산화알루미늄(Al2O3)의 베이스에 산화철(FeO), 산화마그네슘(MgO), 산화망간(MnO), 산화티탄(TiO) 및 탄소나노튜브(CNT)를 포함하는 알루미나 조성물로 제작되는 것을 특징으로 하는 정전 척.
It is characterized in that it is made of an alumina composition comprising iron oxide (FeO), magnesium oxide (MgO), manganese oxide (MnO), titanium oxide (TiO) and carbon nanotubes (CNT) on a base of aluminum oxide (Al 2 O 3 ) with electrostatic chuck.
 제 3항에 있어서,
상기 탄소나노튜브는 0.1 내지 0.5 중량%로 포함되는 것을 특징으로 하는 정전 척.
4. The method of claim 3,
The electrostatic chuck, characterized in that the carbon nanotube is included in 0.1 to 0.5% by weight.
 제 4항에 있어서,
상기 알루미나 조성물은 산화철(FeO) 5중량%, 산화마그네슘(MgO) 1중량%, 산화망간(MnO) 5중량%로 이루어지는 것을 특징으로 하는 전도성이 높은 흑색 알루미나 조성물.5. The method of claim 4,
The alumina composition is high conductivity black alumina composition, characterized in that consisting of iron oxide (FeO) 5% by weight, magnesium oxide (MgO) 1% by weight, manganese oxide (MnO) 5% by weight.
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* Cited by examiner, † Cited by third party
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