KR20220040307A - 하이브리드 접합 구조물, 이를 포함한 반도체 소자, 및 반도체 소자 제조방법 - Google Patents

하이브리드 접합 구조물, 이를 포함한 반도체 소자, 및 반도체 소자 제조방법 Download PDF

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KR20220040307A
KR20220040307A KR1020200123317A KR20200123317A KR20220040307A KR 20220040307 A KR20220040307 A KR 20220040307A KR 1020200123317 A KR1020200123317 A KR 1020200123317A KR 20200123317 A KR20200123317 A KR 20200123317A KR 20220040307 A KR20220040307 A KR 20220040307A
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South Korea
Prior art keywords
shell
core
semiconductor device
junction structure
hybrid junction
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KR1020200123317A
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English (en)
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주건모
송병권
이정훈
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삼성전자주식회사
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Priority to KR1020200123317A priority Critical patent/KR20220040307A/ko
Priority to CN202111030686.5A priority patent/CN114256184A/zh
Priority to EP21195683.4A priority patent/EP3974096A1/en
Priority to US17/477,806 priority patent/US20220093549A1/en
Publication of KR20220040307A publication Critical patent/KR20220040307A/ko

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Abstract

하이브리드 접합 구조물, 반도체 소자 및 반도체 소자 제조 방법이 개시된다.
개시된 하이브리드 접합 구조물은 솔더 볼 및 상기 솔더 볼에 결합된 솔더 페이스트;를 포함하고, 상기 솔더 페이스트가 액상 천이 입자를 포함하고, 상기 액상 천이 입자가 코어와, 상기 코어 표면에 구비된 쉘을 포함하고, 상기 쉘의 융점이 상기 코어의 융점보다 작을 수 있다.

Description

하이브리드 접합 구조물, 이를 포함한 반도체 소자, 및 반도체 소자 제조방법{Hybrid bonding structure, semiconductor device having the same and method of manufacturing semiconductor device}
예시적인 실시 예는 저온에서 접합할 수 있는 하이브리드 접합 구조물, 이를 포함한 반도체 소자 및 반도체 소자의 제조 방법에 관한 것이다.
반도체 패키징에는 다양한 용융 온도를 가진 금속 합금을 이용하여 서로 접합하는 방법이 사용된다. 이러한 접합 방법 중 하나가 솔더링이다. 솔더링에 많이 사용되는 재료로는 주석(Sn), 은(Ag), 구리(Cu)와 같은 금속 소재가 합금으로 구성되어 있는 SAC계 솔더가 대표적인 예이다.
SAC계 솔더의 경우, 융점이 200°C~230°C 범위에 있어, SAC계 솔더를 고집적 및 얇은 반도체 패키지에 적용 시, 공정 온도 범위에 따라 기판이 휘어지거나 늘어나는 경우가 발생하게 된다. 기판의 상부와 하부에 인장 응력과 압축 응력이라는 반대 방향의 힘이 가해지게 되어 솔더 접합부의 손상이 발생한다.
예시적인 실시 예는 저온에서 접합할 수 있는 하이브리드 접합 구조물을 제공한다.
예시적인 실시 예는 저온에서 접합된 반도체 소자를 제공한다.
예시적인 실시 예는 저온에서 반도체 소자를 제조하는 방법을 제공한다.
예시적인 실시 예에 따른 하이브리드 접합 구조물은, 솔더 볼; 및 상기 솔더 볼에 결합된 솔더 페이스트;를 포함하고, 상기 솔더 페이스트가 액상 천이 입자를 포함하고, 상기 액상 천이 입자가 코어와, 상기 코어 표면에 구비된 쉘을 포함하고, 상기 쉘의 융점이 상기 코어의 융점보다 작고, 상기 액상 천이 입자가 20 내지 190℃ 범위에서 상기 코어와 쉘이 금속간 화합물을 형성하도록 구성될 수 있다.
상기 코어는 Sn, Ag, Cu, In, Al, Zn, 또는 Fe 중 적어도 하나를 포함할 수 있다.
상기 쉘은 Bi, In, Ga 또는 Ag 중 적어도 하나를 포함할 수 있다.
상기 솔더 볼이 SnAgCu 합금을 포함할 수 있다.
상기 코어가 SnAgCu 합금을 포함하고, 상기 쉘이 Bi를 포함할 수 있다.
상기 코어가 Cu를 포함하고, 상기 쉘이 In 또는 Ag 중 적어도 하나를 포함할수 있다.
상기 쉘의 융점이 150-200℃ 범위를 가질 수 있다.
상기 금속간 화합물의 재분해 온도가 400-650°C 범위를 가질 수 있다
상기 코어 직경에 대한 쉘의 두께의 비 0.02 ~ 0.5 범위를 가질 수 있다.
상기 솔더 페이스트가 금속 입자를 더 포함하고, 상기 금속 입자는 Sn, In, Ag, Au, Cu, 또는 Ni 중 적어도 하나를 포함할 수 있다.
상기 천이 액상 입자의 코어가 20~45 μm 범위의 직경을 가질 수 있다.
상기 천이 액상 입자의 쉘의 두께가 1-10 μm 범위를 가질 수 있다.
상기 코어와 쉘 사이에 삽입층이 더 구비될 수 있다.
상기 삽입층이 Ni, CNT, 그래핀, 또는 Ga 중 적어도 하나를 포함할 수 있다.
상기 솔더 볼이 Sn－Ag－Cu 합금, Sn－Bi 합금, Sn－Bi－Ag 합금, 또는 Sn－Ag－Cu－Ni 합금으로 이루어진 군으로부터 선택되는 적어도 1종의 합금을 포함할 수 있다.
예시적인 실시 예에 따른 반도체 소자는, 회로 기판; 반도체 칩; 및 상기 회로 기판과 반도체 칩 사이에 구비된 하이브리드 접합 구조물;을 포함하고, 상기 하이브리드 접합 구조물이 솔더 볼 및 상기 솔더 볼에 결합된 솔더 페이스트를 포함하고, 상기 솔더 페이스트가 액상 천이 입자를 포함하고, 상기 액상 천이 입자가 코어와, 상기 코어 표면에 구비된 쉘을 포함하고, 상기 쉘의 융점이 상기 코어의 융점보다 작고, 상기 액상 천이 입자가 20 내지 190℃ 범위에서 상기 코어와 쉘이 금속간 화합물을 형성하도록 구성될 수 있다.
예시적인 실시 예에 따른 반도체 소자 제조 방법은, 반도체 칩을 형성하는 단계; 상기 반도체 칩에 솔더 볼을 정렬하는 단계; 회로 기판에, 코어와 쉘을 포함하는 천이 액상 입자와 플럭스를 포함하는 솔더 페이스트를 도포하는 단계; 상기 솔더 볼을 상기 솔더 페이스트에 마주보게 위치시키는 단계; 20 내지 190℃ 범위에서 상기 쉘을 용융하여 상기 쉘과 코어 사이에 금속간 화합물을 형성하는 단계; 및 상기 반도체 칩을 회로 기판에 접합하는 단계;를 포함할 수 있다.
예시적인 실시 예는 저온에서 접합할 수 있는 하이브리드 접합 구조물을 제공한다. 천이 액상 입자를 포함하는 솔더 페이스트를 이용하여 저온에서 회로 기판과 반도체 칩을 접합함으로써, 고온에 따른 반도체 패키지의 변형을 줄일 수 있다. 또한, 예시적인 실시 예에 따른 하이브리드 접합 구조물은 취성을 개선하여, 반도체 소자의 패키지 불량을 줄일 수 있다.
도 1은 예시적인 실시 예에 따른 반도체 소자를 개략적으로 도시한 것이다.
도 2는 예시적인 실시 예에 따른 반도체 소자의 천이 액상 입자를 확대하여 도시한 것이다.
도 3은 예시적인 실시 예에 따른 반도체 소자의 천이 액상 입자의 국부적 용융 상태를 개략적으로 보인 것이다.
도 4는 예시적인 실시 예에 따른 하이브리드 접합 구조물의 천이 액상 입자의 일 예를 보인 것이다.
도 5는 예시적인 실시 예에 따른 하이브리드 접합 구조물의 천이 액상 입자의 다른 예를 보인 것이다.
도 6은 예시적인 실시 예에 따른 반도체 소자의 Cu/In/Ag 천이 액상 입자의 국부적 용융 상태를 도식적으로 보인 것이다.
도 7 및 도 8은 예시적인 실시 예에 따른 솔더 페이스트의 Bi 함량에 따른 솔더 페이스트 확대 사진을 나타낸 것이다.
도 9 내지 도 12는 예시적인 실시 예에 따른 솔더 페이스트에 포함된 액상 천이 입자의 도금 시 PH에 따른 사진을 도시한 것이다.
도 13은 예시적인 실시 예에 따른 솔더 페이스트에 포함된 액상 천이 입자의 도금 시간에 따른 사진을 도시한 것이다.
도 14는 예시적인 실시 예에 따른 하이브리드 접합 구조물의 천이 액상 입자 함량에 따른 BST 강도를 나타낸 것이다.
도 15는 예시적인 실시 예에 따른 하이브리드 접합 구조물의 천이 액상 입자 함량에 따른 솔더 단면과 솔더 접합부를 나타낸 것이다.
도 16은 예시적인 실시 예에 따른 하이브리드 접합 구조물의 접합 단면의 미세 조직을 나타낸 것이다.
도 17은 예시적인 실시 예에 따른 하이브리드 접합 구조물의 접합부의 성분분석 결과를 나타낸 것이다.
도 18은 예시적인 실시 예에 따른 하이브리드 접합 구조물의 사이클 횟수에 다른 JST 변형률을 나타낸 것이다.
도 19 내지 도 23은 예시적인 실시 예에 따른 반도체 소자의 제조 방법을 나타낸 것이다.
이하, 첨부된 도면을 참조하여 다양한 실시예에 따른 하이브리드 접합 구조물 및 이를 포함한 반도체 소자에 대해 상세히 설명한다. 이하의 도면들에서 동일한 참조부호는 동일한 구성요소를 지칭하며, 도면상에서 각 구성요소의 크기는 설명의 명료성과 편의상 과장되어 있을 수 있다. 제 1, 제 2 등의 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 구성요소들은 용어들에 의해 한정되어서는 안 된다. 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다.
단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 또한 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다. 또한, 도면에서 각 구성요소의 크기나 두께는 설명의 명료성을 위하여 과장되어 있을 수 있다. 또한, 소정의 물질층이 기판이나 다른 층 상에 존재한다고 설명될 때, 그 물질층은 기판이나 다른 층에 직접 접하면서 존재할 수도 있고, 그 사이에 다른 제3의 층이 존재할 수도 있다. 그리고, 아래의 실시예에서 각 층을 이루는 물질은 예시적인 것이므로, 이외에 다른 물질이 사용될 수도 있다.
또한, 명세서에 기재된 “...부”, “모듈” 등의 용어는 적어도 하나의 기능이나 동작을 처리하는 단위를 의미하며, 이는 하드웨어 또는 소프트웨어로 구현되거나 하드웨어와 소프트웨어의 결합으로 구현될 수 있다.
본 실시예에서 설명하는 특정 실행들은 예시들로서, 어떠한 방법으로도 기술적 범위를 한정하는 것은 아니다. 명세서의 간결함을 위하여, 종래 전자적인 구성들, 제어 시스템들, 소프트웨어, 상기 시스템들의 다른 기능적인 측면들의 기재는 생략될 수 있다. 또한, 도면에 도시된 구성 요소들 간의 선들의 연결 또는 연결 부재들은 기능적인 연결 및/또는 물리적 또는 회로적 연결들을 예시적으로 나타낸 것으로서, 실제 장치에서는 대체 가능하거나 추가의 다양한 기능적인 연결, 물리적인 연결, 또는 회로 연결들로서 나타내어질 수 있다.
“상기”의 용어 및 이와 유사한 지시 용어의 사용은 단수 및 복수 모두에 해당하는 것일 수 있다.
방법을 구성하는 단계들은 설명된 순서대로 행하여야 한다는 명백한 언급이 없다면, 적당한 순서로 행해질 수 있다. 또한, 모든 예시적인 용어(예를 들어, 등등)의 사용은 단순히 기술적 사상을 상세히 설명하기 위한 것으로서 청구항에 의해 한정되지 않는 이상 이러한 용어로 인해 권리 범위가 한정되는 것은 아니다.
도 1은 예시적인 실시예에 따른 반도체 소자를 개략적으로 도시한 것이다.
반도체 소자(100)는 회로 기판(110)과, 반도체 칩(140)과, 회로 기판(110)과 반도체 칩(140)을 접합하기 위한 하이브리드 접합 구조물(120)을 포함할 수 있다.
하이브리드 접합 구조물(120)은 솔더 볼(121)과, 솔더 볼(121)에 결합된 솔더 페이스트(130)를 포함할 수 있다.
솔더 볼(121)은 예를 들어, Sn－Ag－Cu 합금, Sn－Bi 합금, Sn－Bi－Ag 합금, 또는 Sn－Ag－Cu－Ni 합금으로 이루어진 군으로부터 선택되는 적어도 1종의 합금을 포함할 수 있다. 솔더 볼(121)은 예를 들어, Sn-Ag(0.3~3)-Cu(0.1~1), Sn-Bi(35~75), Sn-Bi(35~75)-Ag(0.1~20), Sn-Ag(0.5~5)-Cu(0.1~2)-Ni(0.05~0.1) 중 적어도 하나를 포함할 수 있다. 예를 들어, 솔더 볼(121)이 Sn－Ag－Cu 합금으로 구성되는 경우, 솔더 볼(121)은 SAC305 또는 SAC205 등을 포함할 수 있다.
솔더 페이스트(130)는 액상 천이 입자(transient liquid phase)와 플럭스를 포함할 수 있다.
도 2는 액상 천이 입자를 개략적으로 도시한 것이다. 액상 천이 입자(132)가 코어(134)와, 코어(134)의 표면에 구비된 쉘(136)을 포함할 수 있다. 쉘(136)의 융점이 코어(134)의 융점보다 작을 수 있다. 예를 들어, 쉘(136)은 120-200℃ 범위의 융점을 가질 수 있다. 예를 들어, 쉘(136)은 150-190℃ 범위의 융점을 가질 수 있다. 예를 들어, 코어(134)는 200℃ 이상의 융점을 가질 수 있다.
코어(134)는 Sn, Ag, Cu, In, Al, Zn, Bi, Ni 또는 Fe 중 적어도 하나를 포함할 수 있다. 코어(134)는 솔더 볼(121)과 유사한 조성물을 가질 수 있다. 예를 들어, 코어(134)는 Sn－Ag－Cu 합금, Sn－Bi 합금, Sn－Bi－Ag 합금, 또는 Sn－Ag－Cu－Ni 합금으로 이루어진 군으로부터 선택되는 적어도 1종의 합금을 포함할 수 있다. 쉘(136)은 Bi, In, Ga 또는 Ag 중 적어도 하나를 포함할 수 있다. 액상 천이 입자(132)는 온도에 따라 코어(134)의 일부 물질(B)과 쉘(136)의 일부 물질(A)이 액상을 가지고 혼합되어 금속간 화합물(intermetallic compound)을 형성할 수 있다. 코어(134)와 쉘(136)이 리플로우 공정시 금속간 화합물을 형성할 수 있다. 코어(134)와 쉘(136)이 예를 들어, 20 내지 190℃ 범위에서 금속간 화합물을 형성할 수 있다. 금속간 화합물은 2종 이상의 금속으로 이루어진 화합물이다. 통상의 합금은 원래 금속의 어느 하나의 구조가 유지되고, 다른 하나의 금속 원자가 랜덤하게 치환된 고용체의 구조를 가지고 있다. 통상의 합금은 고용체 합금이라고 칭해진다. 고용체 합금의 조성은 구성하는 금속이 동일하다 하더라도, 어느 정도의 폭은 있지만 다양한 비율로 이루어질 수 있다. 한편, 금속간 화합물은 원래 금속과는 다른 결정 구조를 갖는 화합물이다. 금속간 화합물의 조성은 2종 이상의 금속이 간단한 정수비로 이루어질 수 있다.
한편, 코어(134)와 쉘(136) 사이에 삽입층이 더 구비될 수 있다. 삽입층이 예를 들어, Ni, CNT, 그래핀, 또는 Ga 중 적어도 하나를 포함할 수 있다.
도 3은 솔더 페이스트가 용융된 상태를 나타낸 것이다. 액상 천이 입자(132)의 쉘(136)이 용융되어 코어(134)와 쉘(136)에 의한 금속간 화합물(136a)이 형성할 될 있다. 쉘(136)이 용융되어 금속간 화합물(136a)이 형성되고, 금속간 화합물(136a)에 의해 솔더 볼(121)과 솔더 페이스트(130)가 접합될 수 있다. 쉘(136)은 코어(134)에 비해 낮은 융점을 가지고, 코어(134)가 솔더 볼(121)과 유사한 물리적 특성을 가지는 조성물을 포함하도록 구성되어, 솔더 볼(121)과 솔더 페이스트(130) 사이의 접합력을 높일 수 있고, 외부 충격에 따른 파괴 등을 줄일 수 있다. 쉘(136)은 용융 온도를 낮출 수 있고, 코어(134)는 솔더 볼(121)과 솔더 페이스트(130)의 접합 경계 영역에서의 기계적 물성을 향상할 수 있다. 즉, 코어(134)는 솔더 볼(121)과 유사한 조성을 가지는 물질을 포함하여, 솔더 볼(131)과 솔더 페이스트(121) 사이의 물리적 특성 차를 줄임으로써 접합 경계 영역에서의 기계적 물성을 향상할 수 있다. 접합 경계 영역은 예를 들어, 솔더 볼(121)과 솔더 페이스트(130) 사이의 접합 영역의 중앙 영역을 포함할 수 있다.
액상 천이 입자(132)는 예를 들어, 20 내지 190℃ 범위에서 코어(134)와 쉘(136)이 금속간 화합물을 형성하도록 구성될 수 있다. 도 3은 코어(134)와 쉘(136)이 금속간 화합물(136a)을 형성한 것을 보여준다. 금속간 화합물(136a)의 재분해 온도가 400°C 이상일 수 있다. 예를 들어, 금속간 화합물(136a)의 재분해 온도가 400-650°C 범위를 가질 수 있다.
예를 들어, 솔더 볼(121)이 SnAgCu 합금을 포함하고, 코어(134)가 SnAgCu 합금을 포함하고, 쉘(136)이 Bi를 포함할 수 있다. 도 4는 코어(134)가 SnAgCu 합금을 포함하고, 쉘(136)이 Bi를 포함한 천이 액상 입자를 보인 것이다. 또는, 솔더 볼(121)이 SnAgCu 합금을 포함하고, 코어(134)가 Cu를 포함하고, 쉘(136)이 In 또는 Ag 중 적어도 하나를 포함할 수 있다. 도 5는 코어(134)가 Cu를 포함하고, 쉘(136)이 In-Ag를 포함한 천이 액상 입자를 보인 것이다.
도 6은 천이 액상 입자 사이의 결합을 보인 것이다. 예를 들어, 코어가 Cu로 형성되고, 쉘이 In/Ag로 형성될 수 있다. 천이 액상 입자들에 온도를 가하면, 쉘이 용융되고, 코어와 쉘 사이에 금속간 화합물이 형성될 수 있다. 금속간 화합물에 의해 천이 액상 입자들이 국부적으로 결합될 수 있다. 그리고, 천이 액상 입자들과 플럭스가 포함된 솔더 페이스트의 접합력이 높아질 수 있다.
한편, 솔더 페이스트(130)가 금속 입자를 더 포함할 수 있다. 금속 입자는 예를 들어, Au, Ag, Sn, In, Cu, 또는 Ni 중 적어도 하나를 포함할 수 있다.
천이 액상 입자(132)가 리플로우 공정에 의해 용융 시 플럭스는 휘발되어 제거되고 금속 입자만 남을 수 있다. 플럭스는 휘발성 성분을 포함할 수 있다. 플럭스는 산화막을 제거하거나, 솔더입자 흐름성을 개선할 수 있다. 솔더 페이스트(130)가 천이 액상 입자(132)와 플럭스의 혼합체로 구성되고, 천이 액상 입자(132)의 코어는 예를 들어, 20~45 μm 범위의 직경을 가질 수 있다.
플럭스는 유기 물질을 포함할 수 있다. 플럭스는, 수용성 플럭스 또는 지용성 플럭스를 포함할 수 있다. 플럭스(flux)는 로진(Rosin) 계열 플럭스, 레진(resin) 계열 플럭스, 및 유기산 계열 플럭스로 이루어진 그룹에서 선택된 적어도 하나를 포함할 수 있다. 하지만, 플럭스가 이에 한정되는 것은 아니다. 플럭스는 천이 액상 입자(132)의 유동성과 입자 간 반응을 원활하게 하고 인쇄 공정을 용이하게 할 수 있다.
예시적인 실시 예에 따른 하이브리드 솔더 구조물은, 리플로우 시 쉘의 국부 용융에 의해 솔더 접합이 될 수 있다. 도 6은 InAg 쉘에 의한 국부 접합을 개념적으로 보인 것이다.
예시적인 실시 예에 따른 하이브리드 솔더 구조물은 예를 들어, 데이터 서버, 노트북, 휴대폰, TV와 같은 가전제품, 컴퓨터, 모바일 제품 등에 적용되는 저온 접합 소재로서 사용될 수 있다. 기판이 얇아지고, 반도체 소자가 소형화되면서, 반도체 소자가 온도에 따른 영향을 많이 받을 수 있다. 따라서, 반도체 소자의 접합을 위한 접합 구조물은 반도체 소자에 영향을 가능한 적게 미칠 수 있도록 저온에서 접합될 수 있는 구조물이 채용될 수 있다. 그런데, 예를 들어, Sn58Bi는 저온 접합 재료이지만, Bi 성분이 취성을 갖고 있어서 낙하 충격 및 열 변형에 의해 쉽게 파손될 수 있다.
예시적인 실시 예에 따른 하이브리드 접합 구조물은 저온에서 접합될 수 있고, 취성(brittleness)에도 강한 특성을 가질 수 있다. 솔더 페이스트(130)는 취성을 완화할 수 있도록 천이 액상 입자(132)를 포함하고, 천이 액상 입자(132)의 함량과, 쉘의 두께, 쉘의 함량 등을 조절할 수 있다. 예를 들어, 코어가 20~45 μm 범위의 직경을 포함하고, 쉘이 1~10 μm 범위의 두께를 가질 수 있다. 코어 직경에 대한 쉘 두께의 비(쉘 두께/코어 직경)는 0.02 ~ 0.5 범위를 가질 수 있다.
도 7 및 도 8은 SAC 코어와 Bi 쉘을 포함하는 천이 액상 입자의 Bi 함량 별 이미지를 나타낸 것이다. 도 7은 Bi 10wt%인 경우를 나타낸 것이고, 도 8은 Bi 20wt%인 경우를 나타낸 것이다. Bi 함량이 증가할 때, 쉘 표면이 어두운 색으로 변화되는 경향이 있다. 예를 들어, Bi 함량이 10%에서 20%로 증가하게 되면, 천이 액상 입자의 표면이 거칠어질 수 있다. 천이 액상 입자의 표면이 거칠게 되면 쉘의 도금 두께의 균일도가 저하되고, 코어와의 접합력이 감소될 수 있다. 예를 들어, Bi 함량은 10-20% 범위를 가질 수 있다.
천이 액상 입자는 도금 법에 의해 제작될 수 있다. 코어에 쉘을 도금 시, 도금액의 PH를 조절하면서 코어에 쉘을 코팅할 수 있다. 도 9는 PH가 8.25일 때, 도 10은 PH가 8.75일 때, 도 11은 PH가 9.0일 때, 도 12는 PH가 9.25일 때의 천이 액상 입자의 단면 이미지를 나타낸 것이다. 예를 들어, PH 가 9.25보다 클 때 Bi 쉘이 분리되는 경향이 있었다. 예를 들어, 천이 액상 입자의 쉘의 도금 시 9.0∼9.25 범위의 PH를 가지는 도금액으로 도금할 수 있다 .
도 13은 쉘의 도금 시간 별 액상 천이 입자의 단면 이미지를 나타낸 것이다.
액상 천이 입자를 도금 법으로 제작할 경우, 도금 시간이 증가함에 따라 쉘의 두께가 증가한다. 예를 들어, 1 분 도금 시 쉘의 두께가 대략 0.35 μm이고, 3 분 도금 시 쉘의 두께가 대략 2.5 μm이고, 5 분 도금 시 쉘의 두께가 대략 5~8μm일 수 있다. 쉘의 두께가 증가함에 따라, 코어와의 접착력이 감소할 수 있다. 예를 들어, 도금 시간이 최대 35분까지 증가할 경우, 액상 천이 입자의 손상이 관찰되었다. 도금 공정 인자는 크게 온도, 시간, PH, 회전속도(rpm) 등이 있다. 도금 시간, 온도, PH 등을 적절히 조절하여 액상 천이 입자를 도금할 수 있다.
도 14는 천이 액상 입자의 함량에 따른 BST(Ball Shear Test) 강도(strength)를 나타낸 것이다. BST 강도는 전단 응력 강도를 나타낼 수 있다. 전체 솔더 페이스트에 대한 천이 액상 입자의 함량이 0.1wt%인 경우와 0.3wt%인 경우, 각각 예를 들어, 400gf보다 큰 BST 강도를 나타내었다. Sn58Bi 솔더가 동일한 실험 조건하에 약 380gf 정도의 BST 값을 보였는데 비해, 예시적인 실시 예에서는 400gf 이상의 BST 강도를 가질 수 있다. 천이 액상 입자는 예를 들어, 0.5wt% 이하의 함량을 가질 수 있다. 그럼으로써, BST 강도를 높일 수 있다. 하지만 천이 액상 입자의 함량은 여기에 한정되는 것은 아니다.
도 14를 참조하면, 천이 액상 입자는 0 보다 크고 0.5wt% 이하의 함량을 가질 수 있다. 예를 들어, 천이 액상 입자는 SAC 코어와 Bi 쉘을 포함하고, 0.05 내지 0.5wt% 함량을 가질 수 있다. 천이 액상 입자의 함량이 0.1 wt%인 경우, 높은 전단응력강도를 보였으며, 천이 액상 입자의 함량이 0.3wt%일 때 전단응력강도가 감소하였다. 도 14에서 점선은 솔더 페이스트가 Sn57Bi1Ag를 포함하는 비교 예를 나타낸 것이고, 0보다 크고 0.5wt% 이하의 함량을 가진 천이 액상 입자를 포함하는 솔더 페이스트의 경우 비교 예에 비해 높은 전단응력 강도를 보였다.
도 15는 천이 액상 입자의 함량이 0.1wt%일 때와 0.3wt%일 때 솔더 페이스트 단면과 솔더 페이스트 접합 파단면의 이미지를 나타낸 것이다. 솔더 파괴 단면 분석을 통해 파단 위치를 관찰하였다. 솔더 파단은 전반적으로 솔더 볼과 저온 솔더 페이스트 경계 부근에서 발생하였다. 천이 액상 입자가 0.3 wt% 함량을 가진 경우, 솔더 볼 영역에서 연성 파괴가 발생되었다.
도 16은 SAC/Bi로 형성된 천이 액상 입자를 포함한 솔더 페이스트의 접합 단면 미세 조직을 나타낸 것이고, 도 17은 천이 액상 입자의 성분을 분석한 결과를 나타낸 것이다 .
도 18은 하이브리드 접합 구조물의 접합부 변형 평가 결과를 나타낸 것이다. 도 18은 열적 사이클(T/C) 횟수에 따른 JST(joint shift teat) 변형 율을 나타낸 것이다. 여기서, 평가용 글라스 칩을 제작하여, T/C 평가 중 접합부의 변형을 관찰하였다.
비교 예는 솔더 페이스트가 Sn57.6Bi0.4Ag를 포함하는 경우를 나타낸다. 그리고, 예시적인 실시 예에 따른 솔더 페이스트는 SAC/Bi 코어 쉘 구조를 가지는 액상 천이 입자를 포함하고, 천이 액상 입자를 0.1wt% 함유한 경우 접합부의 변형 평가 결과를 나타낸다. 비교 예에 비해 예시적인 실시 예에 따라 액상 천이 입자를 포함한 경우 변형 율이 상대적으로 적었다.
다음은 열적 사이클 횟수에 따라 변형이 발생된 접합부의 개수를 나타낸 것이다.
사이클 횟수 비교 예 (Sn57.6Bi0.4Ag) SAC/Bi 0.1wt%
10 0 0
20 0 0
30 5 0
40 13 2
45 8 0
50 3 8
55 13 12
60 6 3
65 2 4
예시적인 실시 예에 따른 하이브리드 접합 구조물은 저온 접합이 가능하며, 열적 변형에 의해 발생하는 접합부의 불량률을 감소시킬 수 있다. 또한, 비교 예의 Sn58Bi계 솔더 페이스트에 비해, 기계적 물성, 예를 들어 인성(toughness)을 개선시킬 수 있다. Sn58Bi계 솔더 페이스트를 하이브리드 접합 구조물에 적용하는 경우, 열 충격 평가 시 약 100회 미만의 사이클에서 접합부 불량이 발생되었다. 접합부 불량은 예를 들어, 접합부 이동(Ball shift), 균열(Crack) 등을 포함하고, 접합부 불량은 최종 전체 패키지 불량으로 이어질 수 있다. 따라서, 솔더의 융점을 낮추면서 기존의 SAC305 솔더와 같거나 큰 인성(toughness)을 확보해야 할 필요가 있다
예시적인 실시 예에 따른 하이브리드 접합 구조물의 솔더 페이스트가 코어-쉘 구조의 액상 천이 입자를 포함할 때, 솔더 페이스트의 젖음성 및 도포 불량으로 인한 불량률을 감소시킬 수 있다.
도 19 내지 도 23은 예시적인 실시 예에 따른 반도체 소자의 제조 방법을 나타낸 것이다.
도 19를 참조하면, 반도체 칩(310)에 금속 패드(315)를 형성하고, 금속 패드(315)에 솔더 볼(330)을 배열할 수 있다. 반도체 칩(310)은 예를 들어, 메모리 칩 또는 LED 칩 등을 포함할 수 있다. 반도체 칩(310)은 예를 들어, DRAM 또는 PRAM 등을 포함할 수 있다. 부재 번호 320은 보호막을 나타낸다.
도 20을 참조하면, 솔더 볼(330)을 금속 패드(315)에 부착할 수 있다. 솔더 볼(330)은 예를 들어, Sn－Ag－Cu 합금, Sn－Bi 합금, Sn－Bi－Ag 합금, 및 Sn－Ag－Cu－Ni 합금으로 이루어진 군으로부터 선택되는 적어도 1종의 합금을 포함할 수 있다.
도 21을 참조하면, 회로 기판(345)에 마스크(340)를 이용하여 솔더 페이스트(360)를 도포할 수 있다. 솔더 페이스트(360)의 도포 방법으로 예를 들어, 스텐실 프린팅 방법을 사용할 수 있다. 회로 기판(345)은 전력을 공급하기 위해 필요한 배선이나 TFT(thin－film－transistor)등과 함께, 전극(350)을 포함할 수 있다. 전극(350)은 회로 기판(345)에 형성된 금속 배선의 일부가 그대로 이용될 수도 있고, 배선과 접속된 금속 패드로서 형성되는 것도 가능하다. 솔더 페이스트(360)는 도 1 내지 도 18을 참조하여 설명한 것과 실질적으로 동일하므로 여기서는 상세한 설명을 생략한다.
도 22를 참조하면, 도 20의 솔더 볼(330)을 솔더 페이스트(360)와 마주보도록 하여 접촉시킬 수 있다. 그리고, 도 23을 참조하면, 리플로우 공정을 통해 솔더 페이스트(360)를 용융시켜 솔더볼(330)과 전극(350)을 접합할 수 있다. 솔더 페이스트(360)의 액상 천이 입자의 쉘의 융점은 예를 들어, 120-200°C 범위를 가질 수 있다. 예를 들어, 솔더 페이스트(360)의 액상 천이 입자의 쉘의 융점은 150~190°C 범위를 가질 수 있다. 리플로우 공정에서 솔더 페이스트(360)의 액상 천이 입자의 쉘과 코어 사이에 금속간 화합물이 형성될 수 있다. 예를 들어, 코어와 쉘이 20 내지 190℃ 범위에서 금속간 화합물을 형성할 수 있다.
리플로우 공정에서 냉각 구간 동안 하이브리드 접합 구조물을 경화시킬 수 있다.
예시적인 실시 예에 따른 반도체 소자 제조 방법에 따르면, 코어-쉘 구조의 액상 천이 입자가 포함된 솔더 페이스트를 이용하여 용융 온도를 낮추고, 솔더 접합부의 기계적 물성을 개선할 수 있다.
예시적인 실시 예에 따른 반도체 소자는 능동 소자 또는 수동소자를 포함할 수 있다. 반도체 소자는 하나의 기판에 고집적으로 실장될 수 있다. 이때 반도체 소자의 열손상에 의한 불량 및 성능저하 감소를 위해 저온 접합 소재가 필요하다. 다양한 실시 예에 따른 반도체 소자에 이러한 저온 접합 소재가 적용될 수 있다. 예를 들어, 반도체 소자는 데이터 서버 및 모바일 노트북에 들어가는 메모리 반도체 패키지 또는 모듈을 포함할 수 있다.
또는, 다양한 실시 예에 따른 반도체 소자는 플렉서블(flexible) 디스플레이, 웨어러블(wearable) 디스플레이, 폴더블(foldable) 디스플레이, 스트레처블(stretchable) 디스플레이 등에 적용될 수 있다.
상기한 실시예들은 예시적인 것에 불과한 것으로, 당해 기술분야의 통상을 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다. 따라서, 예시적인 실시예에 따른 진정한 기술적 보호범위는 하기의 특허청구범위에 기재된 발명의 기술적 사상에 의해 정해져야만 할 것이다.
100:반도체 소자, 110:회로 기판
120:하이브리드 접합 구조물, 121,330:솔더 볼
130:솔더 페이스트, 140,310:반도체 칩
134:코어, 136:쉘
136a:금속간 화합물

Claims (25)

  1. 솔더 볼; 및
    상기 솔더 볼에 결합된 솔더 페이스트;를 포함하고,
    상기 솔더 페이스트가 액상 천이 입자를 포함하고,
    상기 액상 천이 입자가 코어와, 상기 코어 표면에 구비된 쉘을 포함하고, 상기 쉘의 융점이 상기 코어의 융점보다 작고, 상기 액상 천이 입자가 20 내지 190℃ 범위에서 상기 코어와 쉘이 금속간 화합물을 형성하도록 구성된, 하이브리드 접합 구조물.
  2. 제1 항에 있어서,
    상기 코어는 Sn, Ag, Cu, In, Al, Zn, 또는 Fe 중 적어도 하나를 포함하는 하이브리드 접합 구조물.
  3. 제1 항에 있어서,
    상기 쉘은 Bi, In, Ga 또는 Ag 중 적어도 하나를 포함하는 하이브리드 접합 구조물.
  4. 제1 항에 있어서,
    상기 솔더 볼이 SnAgCu 합금을 포함한 하이브리드 접합 구조물.
  5. 제4 항에 있어서,
    상기 코어가 SnAgCu 합금을 포함하고, 상기 쉘이 Bi를 포함하는 하이브리드 접합 구조물.
  6. 제1 항에 있어서,
    상기 코어가 Cu를 포함하고, 상기 쉘이 In 또는 Ag 중 적어도 하나를 포함하는 하이브리드 접합 구조물.
  7. 제1 항에 있어서,
    상기 쉘의 융점이 150-200℃ 범위를 가지는 하이브리드 접합 구조물.
  8. 제1 항에 있어서,
    상기 금속간 화합물의 재분해 온도가 400-650°C 범위를 가지는 하이브리드 접합 구조물.
  9. 제1 항에 있어서,
    상기 코어 직경에 대한 쉘의 두께의 비 0.02 ~ 0.5 범위를 가지는 하이브리드 접합 구조물.
  10. 제1 항에 있어서,
    상기 솔더 페이스트가 금속 입자를 더 포함하고, 상기 금속 입자는 Sn, In, Ag, Au, Cu, 또는 Ni 중 적어도 하나를 포함하는 하이브리드 접합 구조물.
  11. 제1 항에 있어서,
    상기 천이 액상 입자의 코어가 20~45 μm 범위의 직경을 가지는 하이브리드 접합 구조물.
  12. 제1 항에 있어서,
    상기 천이 액상 입자의 쉘의 두께가 1-10 μm 범위를 가지는 하이브리드 접합 구조물.
  13. 제1 항에 있어서,
    상기 코어와 쉘 사이에 삽입층이 더 구비된 하이브리드 접합 구조물.
  14. 제13 항에 있어서,
    상기 삽입층이 Ni, CNT, 그래핀, 또는 Ga 중 적어도 하나를 포함하는 하이브리드 접합 구조물.
  15. 제1 항에 있어서,
    상기 솔더 볼이 Sn－Ag－Cu 합금, Sn－Bi 합금, Sn－Bi－Ag 합금, 또는 Sn－Ag－Cu－Ni 합금으로 이루어진 군으로부터 선택되는 적어도 1종의 합금을 포함하는 하이브리드 접합 구조물.
  16. 회로 기판;
    반도체 칩; 및
    상기 회로 기판과 반도체 칩 사이에 구비된 하이브리드 접합 구조물;을 포함하고,
    상기 하이브리드 접합 구조물이 솔더 볼 및 상기 솔더 볼에 결합된 솔더 페이스트를 포함하고, 상기 솔더 페이스트가 액상 천이 입자를 포함하고,
    상기 액상 천이 입자가 코어와, 상기 코어 표면에 구비된 쉘을 포함하고, 상기 쉘의 융점이 상기 코어의 융점보다 작고, 상기 액상 천이 입자가 20 내지 190℃ 범위에서 상기 코어와 쉘이 금속간 화합물을 형성하도록 구성된, 반도체 소자.
  17. 제16 항에 있어서,
    상기 코어는 Sn, Ag, Cu, In, Al, Zn, 또는 Fe 중 적어도 하나를 포함하는 반도체 소자.
  18. 제16 항에 있어서,
    상기 쉘은 Bi, In, Ga 또는 Ag 중 적어도 하나를 포함하는 반도체 소자.
  19. 제16 항에 있어서,
    상기 솔더 볼이 SnAgCu 합금을 포함한 반도체 소자.
  20. 제19 항에 있어서,
    상기 코어가 SnAgCu 합금을 포함하고, 상기 쉘이 Bi를 포함하는 반도체 소자.
  21. 제16 항에 있어서,
    상기 코어가 Cu를 포함하고, 상기 쉘이 In 또는 Ag 중 적어도 하나를 포함하는 반도체 소자.
  22. 제16 항에 있어서,
    상기 쉘의 융점이 150-200℃ 범위를 가지는 반도체 소자.
  23. 반도체 칩을 형성하는 단계;
    상기 반도체 칩에 솔더 볼을 정렬하는 단계;
    회로 기판에, 코어와 쉘을 포함하는 천이 액상 입자와 플럭스를 포함하는 솔더 페이스트를 도포하는 단계;
    상기 솔더 볼을 상기 솔더 페이스트에 마주보게 위치시키는 단계;
    20 내지 190℃ 범위에서 상기 쉘을 용융하여 상기 쉘과 코어 사이에 금속간 화합물을 형성하는 단계; 및
    상기 반도체 칩을 회로 기판에 접합하는 단계;를 포함하는 반도체 소자 제조 방법.
  24. 제23 항에 있어서,
    상기 코어는 Sn, Ag, Cu, In, Al, Zn, 또는 Fe 중 적어도 하나를 포함하는 반도체 소자 제조 방법.
  25. 제23 항에 있어서,
    상기 쉘은 Bi, In, Ga 또는 Ag 중 적어도 하나를 포함하는 반도체 소자 제조 방법.
KR1020200123317A 2020-09-23 2020-09-23 하이브리드 접합 구조물, 이를 포함한 반도체 소자, 및 반도체 소자 제조방법 KR20220040307A (ko)

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