KR20200039504A - electroplating method charging a metal plating film - Google Patents

electroplating method charging a metal plating film Download PDF

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Publication number
KR20200039504A
KR20200039504A KR1020180119466A KR20180119466A KR20200039504A KR 20200039504 A KR20200039504 A KR 20200039504A KR 1020180119466 A KR1020180119466 A KR 1020180119466A KR 20180119466 A KR20180119466 A KR 20180119466A KR 20200039504 A KR20200039504 A KR 20200039504A
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South Korea
Prior art keywords
substrate
plating
front surface
rear surface
anodes
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KR1020180119466A
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Korean (ko)
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김형준
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주식회사 남동금속
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Priority to KR1020180119466A priority Critical patent/KR20200039504A/en
Publication of KR20200039504A publication Critical patent/KR20200039504A/en

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007—Current directing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Abstract

A substrate with a through hole formed therein is immersed in a plating solution in a plating tank. A pair of anodes are arranged in the plating solution in the plating tank to face the front surface and the rear surface of the substrate in the plating solution, respectively. Pulse currents are supplied between the front surface of the substrate and one of the anodes facing the front surface of the substrate and between the rear surface of the substrate and the other remaining one of the anodes facing the rear surface of the substrate to separately perform a plurality of plating processes on the front surface and the rear surface of the substrate for a prescribed time. Currents are supplied between the front surface of the substrate and one of the anodes facing the front surface of the substrate and between the rear surface of the substrate and the other remaining one of the anodes facing the rear surface of the substrate in a direction opposite to the plating currents in the plating processes to perform a reverse electrolysis process on the front surface and the rear surface of the substrate between adjacent processes among the plating processes.

Description

금속의 도금막을 충전시키는 전기도금방법 {electroplating method charging a metal plating film}Electroplating method charging a metal plating film

본 발명은 상하로 관통하는 스루홀(through-hole)을 그 내부에 가지는 기판의 앞면과 뒷면 양자 모두를 동시에 도금하여, 상기 스루홀 내부에 구리 등과 같은 금속의 도금막을 충전시키는 전기도금방법에 관한 것이다.The present invention relates to an electroplating method of simultaneously plating both the front side and the back side of a substrate having through-holes penetrating up and down, and filling a plating film of metal such as copper inside the through-hole. will be.

반도체 기판 등의 기판들의 다층 스택의 층들을 전기적으로 연결시키는 방법으로서, 기판을 수직으로 관통하는 복수의 금속의 스루-비아(through-via)들을 형성하는 기술이 알려져 있다. 일반적으로는, 수직으로 관통하는 스루홀들을 그 내부에 가지는 기판의 앞면과 뒷면들 양자 모두를 동시에 도금하여, 상기 스루홀 내부에 금속의 도금막을 충전시킴으로써, 상기 기판 내의 수직 스루-비아들을 제조하게 된다.As a method of electrically connecting layers of a multi-layer stack of substrates, such as a semiconductor substrate, a technique is known for forming through-vias of a plurality of metals vertically penetrating the substrate. In general, both the front side and the back side of the substrate having vertically through holes therein are plated at the same time, thereby filling a plated film of metal inside the through hole to produce vertical through-vias in the substrate. do.

스루-비아들을 형성하기 위한 전기도금장치가 공지되어 있다. 이러한 전기도금장치는, 그 앞면과 뒷면 상의 소정 영역들을 노출시키면서 상기 소정 영역들 주위의 주변 영역들을 시일하여 기판을 유지하기 위한 기판 홀더, 및 상기 기판 홀더에 의해 유지되는 기판의 앞면과 뒷면 각각에 대향하여 배치되는 한 쌍의 애노드를 포함한다. 상기 기판 홀더에 의해 유지된 기판 및 상기 애노드들은 도금액 내에 침지된 다음, 상기 기판과 상기 애노드들 사이에 전압들이 인가되어, 수직 스루홀들을 그 내부에 형성한 상기 기판의 앞면과 뒷면들을 동시에 도금함으로써, 상기 스루홀 내부에 구리 등의 금속을 매입(embedding)하게 된다.Electroplating devices for forming through-vias are known. Such an electroplating apparatus includes a substrate holder for holding a substrate by sealing surrounding areas around the predetermined areas while exposing predetermined areas on the front and back surfaces, and the front and back surfaces of the substrate held by the substrate holder, respectively. It includes a pair of anodes which are arranged to face each other. The substrate and the anodes held by the substrate holder are immersed in a plating solution, and then voltages are applied between the substrate and the anodes to simultaneously plate the front and back surfaces of the substrate with vertical through holes formed therein. , Embedding a metal such as copper into the through hole.

나중에 첨부하겠음I will attach it later

상기 목적을 달성하기 위하여, 본 발명은 그 내부에 스루홀이 형성된 기판을 도금조 내의 도금액에 침지시키는 단계; 상기 도금액 내의 상기 기판의 앞면과 뒷면 각각에 대향하여, 상기 도금조 내의 도금액에 한 쌍의 애노드를 배치시키는 단계; 상기 기판의 앞면과 상기 기판의 앞면에 대향하는 상기 애노드 사이에, 그리고 상기 기판의 뒷면과 상기 기판의 뒷면에 대향하는 다른 상기 애노드 사이에 각각 펄스 전류를 공급하여 상기 기판의 앞면과 뒷면 상에서, 소정의 시간 동안 각각 복수의 도금 처리를 행하는 단계; 및 상기 기판의 앞면과 상기 기판의 앞면에 대향하는 상기 애노드 사이에, 그리고 상기 기판의 뒷면과 상기 기판의 뒷면에 대향하는 다른 상기 애노드 사이에 각각 상기 도금 처리에서의 상기 펄스 전류에 대향하는 방향으로 전류를 공급하여, 상기 도금 처리 중 인접한 것들 사이에서, 상기 기판의 앞면과 뒷면 상에서 반전 전해 처리(reverse electrolyzing process)를 행하는 단계를 포함하여 이루어지는 전기도금방법을 제공한다.In order to achieve the above object, the present invention is a step of immersing a substrate having a through hole therein in a plating solution in a plating bath; Disposing a pair of anodes in the plating solution in the plating bath, opposite to the front and back surfaces of the substrate in the plating solution; A pulse current is respectively supplied between the front surface of the substrate and the anode facing the front surface of the substrate, and between the back surface of the substrate and the other anode facing the back surface of the substrate, and on the front and back surfaces of the substrate, a predetermined Performing a plurality of plating treatments for each of the times; And between the front surface of the substrate and the anode facing the front surface of the substrate, and between the back surface of the substrate and other anodes facing the back surface of the substrate, respectively, in a direction opposite to the pulse current in the plating process. It provides an electroplating method comprising supplying a current to perform a reverse electrolyzing process on the front and back surfaces of the substrate, among adjacent ones of the plating process.

상기 기판의 앞면과 상기 기판의 앞면에 대향하는 상기 애노드 사이에, 그리고 상기 기판의 뒷면과 상기 기판의 뒷면에 대향하는 다른 상기 애노드 사이에 각각 펄스 전류를 공급하여 상기 기판의 앞면과 뒷면 상에서, 소정의 시간 동안 각각 복수의 도금 처리가 수행되므로, 증가된 평균 전류값을 가지고 상기 스루홀 내부에 도금막을 효율적으로 충전하여, 상기 기판을 도금하는데 필요한 시간을 단축시킬 수 있게 된다. 상기 도금 처리 간에 수행된 반전 전해 처리는 상기 스루홀의 코너들 상에 침착된 도금막을 용해하는데 효과적이다. 그러므로, 그 깊이 방향을 따른 상기 스루홀의 중앙부에 상기 도금막을 우선적으로 성장시켜 상기 스루홀 안에 상기 도금막을 이상적으로 충전시킬 수 있게 된다.A pulse current is respectively supplied between the front surface of the substrate and the anode facing the front surface of the substrate, and between the back surface of the substrate and the other anode facing the back surface of the substrate, and on the front and back surfaces of the substrate, a predetermined Since a plurality of plating processes are performed for each of the times, it is possible to shorten the time required to plate the substrate by efficiently filling a plating film inside the through hole with an increased average current value. The reverse electrolytic treatment performed between the plating treatments is effective for dissolving the plating film deposited on the corners of the through hole. Therefore, it is possible to ideally fill the plated film in the through hole by preferentially growing the plated film in the center of the through hole along the depth direction.

본 발명에 따르면, 상술된 바와 같이, 상기 기판의 앞면과 상기 기판의 앞면에 대향하는 상기 애노드 사이에, 그리고 상기 기판의 뒷면과 상기 기판의 뒷면에 대향하는 다른 상기 애노드 사이에 각각 펄스 전류를 공급하여 상기 기판의 앞면과 뒷면 상에서, 소정의 시간 동안 각각 복수의 도금 처리가 수행된다. 이에 따라, 증가된 평균 전류값을 가지고 상기 스루홀 내부에 도금막을 효율적으로 충전하여, 상기 기판을 도금하는데 필요한 시간을 단축시킬 수 있게 된다. 상기 도금 처리 사이에 수행된 반전 전해 처리는 상기 스루홀의 코너들 상에 침착된 도금막들을 용해하는데 효과적이다. 그러므로, 그 깊이 방향을 따른 상기 스루홀의 중앙부에 상기 도금막을 우선적으로 성장시켜 상기 스루홀 내부에 상기 도금막을 이상적으로 충전시킬 수 있게 된다. According to the present invention, as described above, a pulse current is respectively supplied between the front surface of the substrate and the anode facing the front surface of the substrate, and between the other back surface of the substrate and the other anode facing the back surface of the substrate. Thus, on the front and back surfaces of the substrate, a plurality of plating processes are respectively performed for a predetermined time. Accordingly, it is possible to shorten the time required to plate the substrate by efficiently filling a plated film inside the through hole with an increased average current value. The reverse electrolytic treatment performed between the plating treatments is effective in dissolving the plating films deposited on the corners of the through hole. Therefore, it is possible to ideally fill the plated film inside the through hole by preferentially growing the plated film in the center of the through hole along the depth direction.

나중에 첨부하겠음I will attach it later

나중에 첨부하겠음I will attach it later

나중에 첨부하겠음I will attach it later

Claims (1)

기판을 전기 도금하기 위한 기판 홀더로서,
상기 기판의 제 1 면에 접촉 가능한 제 1 도전핀을 가지는 제 1 홀딩 부재와,
상기 제 1 면과는 반대측의 상기 기판의 제 2 면에 접촉 가능한 제 2 도전핀을 가지는 제 2 홀딩 부재와,
상기 제 1 홀딩 부재에 장착된 제 1 시일링과,
상기 제 2 홀딩 부재에 장착된 제 2 시일링과,
상기 제 1 시일링 및 상기 제 2 시일링의 외측에 배치된 O링을 구비하고,
상기 제 1 홀딩 부재와 상기 제 2 홀딩 부재는 개폐 가능하게 구성되어 있으며,
상기 제 1 시일링은, 상기 기판의 제 1 면에 접촉 가능한 제 1 돌기부를 가지고,
상기 제 2 시일링은, 상기 기판의 제 2 면에 접촉 가능한 제 2 돌기부를 가지며,
상기 기판을 전기 도금할 때에, 상기 제 1 돌기부와, 상기 제 2 돌기부와, 상기 O링으로 둘러싸인 도전액이 침입하지 않는 밀폐 공간이 형성되고,
상기 제 1 도전핀 및 상기 제 2 도전핀은 상기 밀폐 공간 내에 위치하고 있으며,
상기 제 1 도전핀 및 상기 제 2 도전핀은, 상기 제 1 및 제 2 돌기부와, 상기 O링의 사이에 위치하고 있는 것을 특징으로 하는 기판 홀더.A substrate holder for electroplating a substrate,
A first holding member having a first conductive pin contactable with a first surface of the substrate,
A second holding member having a second conductive pin capable of contacting a second surface of the substrate opposite to the first surface;
A first sealing ring mounted on the first holding member,
A second sealing ring mounted on the second holding member,
It is provided with an O-ring disposed on the outside of the first sealing ring and the second sealing ring,
The first holding member and the second holding member are configured to be opened and closed,
The first sealing ring has a first protrusion that can contact the first surface of the substrate,
The second sealing ring has a second protrusion that can contact the second surface of the substrate,
When the substrate is electroplated, a closed space is formed in which the first projection, the second projection, and the conductive liquid surrounded by the O-ring do not penetrate,
The first conductive pin and the second conductive pin are located in the closed space,
The first conductive pin and the second conductive pin, the substrate holder, characterized in that located between the first and second projections and the O-ring.
KR1020180119466A 2018-10-07 2018-10-07 electroplating method charging a metal plating film KR20200039504A (en)

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